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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Prognostics of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven and Model-Based Methodologies

An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices that are instrumental in electronics equipment such as those used in operation and control of modern aircraft and spacecraft. The MOSFETs examined here were aged under thermal overstress in a controlled experiment and continuous performance degradation data were collected from the accelerated aging experiment. Dieattach degradation was determined to be the primary failure mode. The collected run-to-failure data were analyzed and it was revealed that ON-state resistance increased as die-attach degraded under high thermal stresses. Results from finite element simulation analysis support the observations from the experimental data. Data-driven and model based prognostics algorithms were investigated where ON-state resistance was used as the primary precursor of failure feature. A Gaussian process regression algorithm was explored as an example for a data-driven technique and an extended Kalman filter and a particle filter were used as examples for model-based techniques. Both methods were able to provide valid results. Prognostic performance metrics were employed to evaluate and compare the algorithms.

Electrolytic capacitors↗
NASA NTRS1988

A variable conductance gas switch for intermediate temperature operation of liquid He/liquid N2 cryostats

A technique for establishing a stable intermediate temperature stage in liquid He/liquid N2 double vessel cryostats is described. The tertiary cold stage, which can be tuned to any temperature between 10 and 60 K, is ideal for cooling IR sensors for use in astronomy and physics applications. The device is called a variable-conductance gas switch. It is essentially a small chamber, located between the cold stage and liquid helium cold-face, whose thermal conductance may be controlled by varying the pressure of helium gas within the chamber. A key feature of this device is the large range of temperature control achieved with a very small (less than 10 mW) heat input from the cryogenic temperature control switch.

Rayner, J. T.↗
NASA NTRS2001

A Model for Rate-Dependent Hysteresis in Piezoceramic Materials Operating at Low Frequencies

This paper addresses the modeling of certain rate-dependent mechanisms which contribute to hysteresis inherent to piezoelectric materials operating at low frequencies. While quasistatic models are suitable for initial material characterization in some applications, the reduction in coercive field and polarization values which occur as frequencies increase must be accommodated to achieve the full capabilities of the materials. The model employed here quantifies the hysteresis in two steps. In the first, anhysteretic polarization switching is modeled through the application of Boltzmann principles to balance the electrostatic and thermal energy. Hysteresis is then incorporated through the quantification of energy required to translate and bend domain walls pinned at inclusions inherent to the materials. The performance of the model is illustrated through a fit to low frequency data (0.1 Hz - 1 Hz) from a PZT5A wafer.

Smith, Ralph C.↗
NASA NTRS2016

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗
NASA NTRS2010

Power MOSFET Thermal Instability Operation Characterization Support

Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.

Shue, John L.↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS1973

Thermally responsive mechanical actuator

Device built for use in heat control, heat measurement, and mechanical actuation by heat include thermometers, thermostats, safety switches, circuit breakers, and mechanical actuators. Silicon rubber has highest coefficient of expansion of any known material and seems suitable for most of these devices.

Madey, J. M.↗
NASA NTRS1987

Critical Mach numbers in classical magnetohydrodynamics

Stationary point analysis is used to compute generalized critical Mach numbers for finite-amplitude fast and slow shocks in classical MHD fluids. Particular attention is paid to the case where the resistive and thermal conduction dissipation scale lengths are comparable and much larger than the viscous scale lengths. With both resistivity and thermal conduction, the critical Mach number at which viscosity must be invoked is determined by the condition that the downstream flow speed equals the isothermal sound speed. It is also shown that resistivity and thermal conduction can provide convergent stationary point solutions for nearly all slow shocks, except perhaps switch-off-shocks.

Kennel, Charles F.↗
NASA NTRS1993

A two-stage magnetic refrigerator for astronomical applications with reservoir temperatures above 4 K

We propose a novel adiabatic demagnetization refrigerator (ADR) to produce temperatures as low as 100 mK starting from a high temperature reservoir between 4 and 8 K. The high temperature reservoir for the ADR can be provided by a mechanical cooler or an unpumped liquid helium bath. This refrigerator can be used to cool bolometric infrared detectors for low background astronomy from mountain tops, balloons or satellites as well as to cool cryogenic x-ray detectors. The two-stage ADR consists of a single magnet with a paramagnetic chromic-cesium-alum (CCA) salt pill to produce the low temperature and paramagnetic gadolinium-gallium-garnet (GGG) as the first stage to intercept heat from the high temperature reservoir. Thermal contact between the paramagnets and the reservoir during magnetization is made with a mechanical heat switch. The ADR is suspended with Kevlar chords under tension for high mechanical stiffness and low parasitic heat leak. In a single cycle, the ADR maintains a temperature of 100 mK for 10 to 100 hours. This time depends strongly on the magnetic field and reservoir temperature but not on the volume of the paramagnetic material as long as the heat leak is dominated by the suspension.

Hagmann, C.↗
NASA NTRS2017

Revisiting the Birth of 7YSZ Thermal Barrier Coatings: Steve Stecura

Thermal barrier coatings are widely used in all turbine engines, typically using a 7 wt% Y2O3-ZrO2 formulation. Extensive research and development over many decades have refined the processing and structure of these coatings for increased durability and reliability. New compositions demonstrate some unique advantages and are gaining in application. However, the "7YSZ" formulation predominates and is still in widespread use. This special composition has been universally found to produce nanoscale precipitates of metastable t' tetragonal phase, giving rise to a unique toughening mechanism via ferro-elastic switching under stress. This note recalls the original study that identified superior properties of 6 to 8 wt% YSZ plasma sprayed thermal barrier coatings, published in 1978. The impact of this discovery, arguably, continues in some form to this day. At one point, 7YSZ thermal barrier coatings were used in every new aircraft and ground power turbine engine produced worldwide. It is a tribute to its inventor, Dr. Stephan J. Stecura, NASA retiree.

turbine blades↗
NASA NTRS1980

Ion beams from laser-generated plasmas

The paper describes the space-charge-limited beams produced by the plasma blowoffs generated by 20-MW bursts of 1.06-micron radiation from an active Q-switched Nd:YAG laser. Laser power densities near 10 to the 11th/sq cm on solid targets generate thermalized plasma plumes which drift to a 15-kV gridded extraction gap where the ions are extracted, accelerated, and electrostatically focused; the spatially defined ion beams are then magnetically analyzed to determine the charge state content in the beams formed from carbon, aluminum, copper, and lead targets. This technique preserves time-of-flight (TOF) information in the plasma drift region, which permits plasma ion temperatures and mass flow velocities to be determined from the Maxwellian ion curve TOF shapes for the individual charge species.

Hughes, R. H.↗
NASA NTRS1994

Efficiency Calculations For a Magnetic Refrigerator Operating Between 2K and 10K

An adiabatic demagnetization refrigerator (ADR) is being developed at NASA-Ames Research Center. The ADR will operate between 2 K and 10 K and will provide 50 mW of cooling at 2 K. The refrigerant in the ADR is Gadolinium Gallium Garnet (GGG). Absorption of heat at 2 K and heat rejection at 10 K in this fully static refrigerator is made possible by the incorporation of 2 K and 10 K heat switches. Physical layout and experimental results are presented in a parallel paper. The present paper discusses the thermal losses associated with components of the ADR as they occur in various parts of the refrigeration cycle. The results are summarized in terms of a prediction for the ADR efficiency.

Helvensteijn, Ben P. M.↗
NASA NTRS2001

MEMS Device Being Developed for Active Cooling and Temperature Control

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Moran, Matthew E.↗
NASA NTRS2010

Effects of Temperature on the Performance and Stability of Recent COTS Silicon Oscillators

Silicon oscillators have lately emerged to serve as potential replacement for crystal and ceramic resonators to provide timing and clock signals in electronic systems. These semiconductor-based devices, including those that are based on MEMS technology, are reported to be resistant to vibration and shock (an important criteria for systems to be deployed in space), immune to EMI, consume very low current, require few or no external components, and cover a wide range of frequency for analog and digital circuits. In this work, the performance of five recently-developed COTS silicon oscillator chips from different manufacturers was determined within a temperature range that extended beyond the individual specified range of operation. In addition, restart capability at extreme temperatures, i.e. power switched on while the device was soaking at extreme (hot or cold) temperature, and the effects of thermal cycling under a wide temperature range on the operation of these silicon oscillators were also investigated. Performance characterization of each oscillator was obtained in terms of its output frequency, duty cycle, rise and fall times, and supply current at specific test temperatures. The five different oscillators tested operated beyond their specified temperature region, with some displaying excellent stability throughout the whole test temperature range. Others experienced some instability at certain temperature test points as evidenced by fluctuation in the output frequency. Recovery from temperature-induced changes took place when excessive temperatures were removed. It should also be pointed out that all oscillators were able to restart at the extreme test temperatures and to withstand the limited thermal cycling without undergoing any significant changes in their characteristics. In addition, no physical damage was observed in the packaging material of any of these silicon oscillators due to extreme temperature exposure and thermal cycling. It is recommended that additional and more comprehensive testing under long term cycling be carried out to fully establish the reliability of these devices and to determine their suitability for use in space exploration missions under extreme temperature conditions.

Patterson, Richard L.↗
NASA NTRS2009

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗
NASA NTRS1990

Nonvolatile Ionic Two-Terminal Memory Device

Conceptual solid-state memory device nonvolatile and erasable and has only two terminals. Proposed device based on two effects: thermal phase transition and reversible intercalation of ions. Transfer of sodium ions between source of ions and electrical switching element increases or decreases electrical conductance of element, turning switch "on" or "off". Used in digital computers and neural-network computers. In neural networks, many small, densely packed switches function as erasable, nonvolatile synaptic elements.

Williams, Roger M.↗
NASA NTRS2003

Continuous Cooling from 10 K to 4 K Using a Toroidal ADR

Future large infrared space telescopes will require cooling to 4K to achieve background limited performance for submillimeter wavelengths. These observatories will require lifetimes of many years and will have relatively large cooling requirements making stored helium dewars impractical. We have designed and are building an adiabatic demagnetization refrigerator (ADR) for use in cooling relatively large loads (10- 100 mW) at 4K and rejecting that heat to a cryocooler operating at 1 OK. Cryocoolers below 1 OK have poor thermodynamic efficiency and ADRs can operate in this temperature range with an efficiency of 75% of Carnot or better. Overall, this can save as much as 2/3 of the input power required to operate a 4K cryocooler. The ADR magnet consists of 8 short coils wired in series and arranged in a toroid to provide self shielding of its magnetic field. This will save mass (about 30% of the mass or about 1.5 kg in our small version, higher percentages in higher cooling power, larger versions) that would have been used for passive or active shields in an ordinary solenoid. The toroid has a 100 mm outer diameter and will produce an approximately 3T average field. In the initial demonstration model the toroid coils will be wound with ordinary NbTi wire and operated at 4K. A second version will then use Nb3Sn wire to provide complete 10K operation. As a refrigerant for this temperature range we will use either GdLiF4 or GdF3 crystals, pending tests of these crystals' cooling capacity per field and thermal conductance. Preliminary indications are that these materials are superior to GGG. We will use gas gap heat switches to alternately connect the toroid to the cold load and the warm heat sink. A small continuous stage will maintain the cold end at 4K while the main toroid is recycled.

DiPirro, Michael J.↗