Mechanisms of ionizing radiation surface effects on transistors.
Ionizing radiation effects on silicon planar bipolar transistors to determine degradation mechanisms
IONIZING RADIATION↗
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Compound diode-transistor structure for temperature compensation.
Compound diode-transistor structure with current gain invariant with temperature
DIODE↗
High power switching transistor Final report
Design theory and fabrication procedure for n-p-n 100 ampere silicon switching transistor
SILICON TRANSISTOR↗
Small Current Measurements with Insulated Gate Field Effect Transistor Electrometers
Small current measurements with insulated-gate field effect transistor electrometers
ELECTROMETER↗
Components irradiation test no. 19, gamma irradiation of 2N914, 2N918, S2N930, 2N2192 and 2N2369 transistors
Gamma radiation tests on n-p-n silicon epitaxial transistors
SILICON TRANSISTOR↗
A thick-film, insulated gate field effect transistor
Feasibility of fabricating thick film, insulated gate field effect transistor using integrated screened circuit technology
INTEGRATED CIRCUIT↗
Compatible thin-film transistors
Fabrication of thin film transistors compatible with passive components
THIN FILM↗
Phenomenological study of radiation damage and recovery of metal-oxide field effect transistors
Phenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors
METAL OXIDE SEMICONDUCTOR /MOS/↗
Low-noise amplifier design with field-effect transistors, volume I Final report
Low noise amplifier design with field effect transistors, random noise characteristics, and noise measurements on commercial devices
NOISE MEASUREMENT↗
Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
INTEGRATED CIRCUIT↗
Design and development of a high power, low saturation voltage silicon switching transistor Quarterly report
Silicon switching transistor with saturation voltage of 0.1 V at 75 A collector current
SATURATION↗
Mechanisms of ionizing radiation surface effects on transistors.
Ionizing radiation effects on silicon planar bipolar transistors determine degradation mechanisms
SILICON TRANSISTOR↗
Design of low-noise transistor switch capable of meeting military EMI specifications.
Low noise transistor switch design capable of switching 1A and meeting military current probe EMI specifications
SWITCHING CIRCUIT↗
Transferred substrate heterojunction bipolar transistors for submillimeter wave applications
We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
heterojunction bipolar transistor InP submillimete↗
Transferred substrate heterojunction bipolar transistors for millimeter and submillimeter wave applications
We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems.
InP HBT rf transistor III-V compound semiconductor↗
Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor
This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.
electrical properties transistors↗
Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor
We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.
infrared hot electron transistor photosensitive em↗