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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Li-ion Battery Aging with Hybrid Physics-Informed Neural Networks and Fleet-wide Data

In this work, we propose a hybrid model for Li-ion battery discharge and aging prediction that leverages fleet-wide data to predict future capacity drops.The model is built upon an hybrid approach merging physics-based and empirical equations, as well as neural network models in a recurrent neural network cell. The hybrid physics-informed neural network can predict voltage discharge cycles given the loading profile, and estimate the used capacity of the battery under random-loading conditions by tracking aging parameters connected to the residual capacity of the battery. By merging information on the battery aging parameters with existing fleet-wide aging data, the model can predict the future residual capacity of the battery that is being monitored, and therefore enable predictions of voltage discharge curves far ahead in the battery life cycle. We validated the approach using the NASA Prognostics Data Repository Battery data-set, which contains experimental data on Li-ion batteries discharged at random loading conditions in a controlled environment. The approach also allows the identification of discrepancies between the battery aging trend and the trend observed at the fleet level, so that batteries behaving differently from the rest of the fleet can be subject to closer monitoring and further testing to refine predictions.

PINN↗
NASA NTRS1994

Temporal study of the current collected by a Langmuir probe biased to high voltages in the wake behind a conducting body

The temporal evolution of the voltage-current characteristic of a spherical Langmuir probe in the near-wake region of a conducting body is investigated in a pulsed plasma device. Measurements of the current collected by a sphere placed on axis behind a conducting disk are presented as a function of the bias voltage and time. The bias voltage on the collecting sphere is large enough, ranging from +500 to -3000 V, to attract ions or electrons across the wake region. In addition, plasma potential profiles as a function of sphere bias voltage and time throughout the nearwake and midwake region are presented. It is found that for a negative sphere bias a threshold voltage exists for current collection. This threshold voltage decreases during the formation of the wake behind the conducting disk. Potential measurements indicate that the sheath region around the negatively biased sphere contracts as the wake region establishes itself. This contraction of the sheath region increases the electric field attracting ions to the sphere and decreases the threshold voltage for current collection. For positive sphere bias voltage the current collected by the sphere does not exhibit a threshold voltage but is monotonically increasing.

Meassick, S.↗
NASA NTRS2006

Hybrid Ion-Detector/Data-Acquisition System for a TOF-MS

A modified ion-detector/data-acquisition system has been devised to increase the dynamic range of a time-of-flight mass spectrometer (TOF-MS) that, previously, included a microchannel-plate detector and a data-acquisition system based on counting pulses and time-tagging them by use of a time-to-digital converter (TDC). The dynamic range of the TOF-MS was limited by saturation of the microchannel plate detector, which can handle no more than a few million counts per second. The modified system includes (1) a combined microchannel plate/discrete ion multiplier and (2) a hybrid data-acquisition system that simultaneously performs analog current or voltage measurements and multianode single-ion-pulse-counting time-of-flight measurements to extend the dynamic range of a TDC into the regime in which a mass peak comprises multiple ions arriving simultaneously at the detector. The multianode data are used to determine, in real time, whether the detector is saturated. When saturation is detected, the data-acquisition system selectively enables circuitry that simultaneously determines the ion-peak intensity by measuring the time profile of the analog current or voltage detector-output signal.

Burton, William D., Jr.↗
DOE OSTI2023

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗
DOE OSTI2025

X-ray-diffraction and electrical-transport imaging of superconducting superhydride (La,Y)H 10

Understanding how microscopic structural domains govern macroscopic electronic properties is central to advancing hydride superconductors, yet such correlations remain poorly resolved under pressure. We report the synthesis and characterization of (La 0.9 Y 0.1 )H 10 superhydrides exhibiting coexisting cubic $Fm\bar{3}m$ and $P6_3/mmc$ hexagonal clathrate phases observed over the pressure range from 168 GPa down to 136 GPa. Using synchrotron-based X-ray diffraction imaging at the upgraded Advanced Photon Source, we spatially resolved μm-scale distributions of these phases, revealing structural inhomogeneity across the sample. Four-probe resistance measurements confirmed superconductivity with two distinct transitions: an onset at 244 K associated with the cubic phase and a second near 220 K linked to the hexagonal phase. Notably, resistance profiles collected from multiple current and voltage permutations showed variations in transition width and onset temperature that correlated with the spatial phase distribution. These findings demonstrate a direct connection between local structural domains and superconducting behavior.

Materials science↗
DOE OSTI2020

Distributed Cooperative Control of Hybrid AC/DC Microgrid

This paper presents a distributed cooperative control-based power management algorithm for a hybrid AC/DC microgrid. The proposed algorithm for a hybrid microgrid system controls the power flow through the interface converter between the AC and DC microgrids. This algorithm allows power sharing between the distributed generators in the microgrid according to their power ratings. Moreover, it enables the fixed scheduled power delivery through the interface converters in both directions at different operating conditions while maintaining voltage regulation and improving the frequency profile. The effectiveness of the controller is confirmed by simulation.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Auto-BLAST (AutoBLAST) [SWR-20-93]

Battery life modeling often involves a lot of manual parameter fitting and is not easy for users to adopt the model and use it. To reduce the difficulties for users to adopt battery lifetime models, an automatic battery lifetime modeling analysis and simulation tool suite, Auto-BLAST, has been developed. Auto-BLAST includes a lithium-loss-base life model, a battery electric model, and an algorithm which automatically fits all key parameters in the electric and life models using user provided data. The models and algorithm are packaged into two user-friendly GUIs, Auto-LifeMod, for easy battery life prognostic model fitting and Auto-LifeSim, for easy battery lifetime simulation. The lithium-loss-based life model adopts a similar model framework that models degradations using aging rate models, using battery cycling data to predict battery degradation and expected lifetime. The electric model is an equivalent circuit model which simulates battery voltage responses based on current/power demand profiles. The auto-fitting algorithm uses the user-input data to generate custom battery life model(s). Two GUIs, wrapping around the life model and the auto-fitting algorithm, provide friendly interfaces for users to generate a life model and use it for case study. One GUI requires summary data from accelerated battery life degradation tests as an input and produces battery life models predicting (a) capacity degradation, and (b) resistance growth of the battery. The GUI displays the electrical model response and the input experimental data against the life model predictions with fitted model parameters and fitting error. The GUI also generates an output file to save the fitted model parameters. The second GUI uses the life model from the first GUI and a user-defined battery cycling profile to predict battery lifetime degradation and expected lifetime. Predicted capacity and resistance vs. time are plotted in the GUI and saved to output file. There is a user guide for both GUIs

Mishra, Partha↗
DOE OSTI2024

Self-potential tomography preconditioned by particle swarm optimization—Self-potential monitoring and streamflow data acquired March 26–September 14, 2023 at East Fork Poplar Creek near Oak Ridge Tennessee

This data release contains self-potential (SP) monitoring data measured on the flood plain of East Fork Poplar Creek (East Fork) in Oak Ridge, Tennessee and streamflow data measured at streamgage EFK5.4 about 310 meters upstream from the SP monitoring site. Additionally, forward and inverse numerical modeling scripts used to model the electrical-potential field on the East Fork flood plain are provided. SP monitoring data included in this data release were measured at 39 different data-collection points on the east flood plain; 30 points were spaced 3-m apart along an 87-m profile parallel to the edge of the streambank, and 9 points were spaced 5-m apart along a 40-m profile approximately perpendicular to the streambank. The two profiles of SP data-collection points intersected at the approximate midpoint of the profile parallel to the streambank. Transient voltages were measured at each data-collection point every 60 seconds between 16:13 Eastern Standard Time (EST) on March 26, 2023, and 11:41 EST on September 14, 2023. Streamflow data included in this data release overlap the time-period of self-potential monitoring and were measured every 900 seconds between 16:23 on March 26, 2023, and 23:53 on September 14, 2023.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS1980

F-5F Shark Nose radome lightning test

A unique F-5F radome wtih a geometry similar to a Shark Nose profile was tested with a high voltage Marx generator, 1,200,000 volts in order to demonstrate the effectiveness of the lightning protection system with currents from 5,000 amperes or greater. An edge discontinuity configuration is a characteristic feature in the forward region of the radome and occasionally serves as an attachment point. The results of nineteen attachment tests at various aspect angles with an air gap of one meter indicated that no damage occurred to the dielectric material of the radom. The test proved the effectiveness of the lightning protection system.

Scott, G. W.↗
NASA NTRS1986

Avionics electromagnetic interference immunity and environment

Aircraft electromagnetic spectrum and radio frequency (RF) field strengths are charted, profiling the higher levels of electromagnetic voltages encountered by the commercial aircraft wiring. Selected military, urban, and rural electromagnetic field levels are plotted and provide a comparison of radiation amplitudes. Low frequency magnetic fields and electric fields from 400 H(Z) power systems are charted versus frequency and wire separation to indicate induced voltages on adjacent or neighboring circuits. Induced EMI levels and attenuation characteristics of electric, magnetic, RF fields, and transients are plotted and graphed for common types of wire circuits. The significance of wire circuit returns and shielding is emphasized to highlight the techniques that help block the paths of electromagnetic interference and maintain avionic interface signal quality.

Clarke, C. A.↗
NASA NTRS1996

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗
NASA NTRS1998

Profile Evolution Simulation in Etching Systems Using Level Set Methods

Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string method (bottom row) predict tapered profiles. The LSPES uses an AD with a FWHM = 13.5 degrees, and rude's model uses a ratio of sheath voltage to ion temperature of 50. The more anisotropic IADs produce profiles with more vertical sidewalls and a wider bottom surface, as shown in the right hand column. Here, the LSPES has an AD with a FWHM = 2 degrees, and rude's model uses a ratio of 500 of sheath voltage to ion temperature. The agreement between the LSPES and rude's model is excellent in both cases. We will present etching profiles generated by the LSPES, including calculations of the re-emitted fluxes of both neutrals and ions off of the profile walls. In addition, we will show the effect of geometric structures (overhangs, etc.) on the etching profiles. Other physical aspects, such as surface diffusion, will also be included in the model.

Hwang, Helen H.↗
NASA NTRS1977

Epitaxial solar-cell fabrication, phase 2

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Daiello, R. V.↗
DOE OSTI2025

Modeling of convective cells, turbulence, and transport induced by a radio-frequency antenna in the tokamak boundary plasma

The edge turbulence model Hermes (Dudson et al 2017 Plasma Phys. Control. Fusion 59 05401) is set up for plasma boundary simulations with an radiofrequency (RF) antenna, using parameters characteristic of a tokamak edge. Cartesian slab geometry is used with thin plate limiters representing the ion cyclotron range of frequency (ICRF) antenna side-wall limiters. Ad-hoc DC electric biasing of the limiters, motivated by calculations with VSim (Nieter et al 2004 J. Comput. Phys. 196 448), represents an induced RF sheath rectified potential in the plasma turbulence model. Flux-driven turbulence simulations demonstrate a realistic distribution of plasma profiles and fluctuations. There is a clear effect of the antenna sheath voltage leading to formation of convective cells; bias-induced convective transport flattens the scrape-off layer density profile and fluctuations penetrate into the shadow region of the limiters as the bias voltage increases. Turbulent transport for impurity ions is inferred by following ion trajectories in the simulated plasma turbulence fields, showing Bohm-like effective diffusion rates. All in all, the model elucidates the key physical phenomena governing the effects of ICRF-induced antenna biasing on the tokamak boundary plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Ambient ion focusing from a field-free region to a detector: enhanced signal for explosives and drug detection with mass spectrometry

This study demonstrates ion focusing at ambient pressure and increased ion signal by creating a voltage gradient from a field-free region to a detector, thereby improving the detection of chemicals, such as explosives and drugs. At ambient pressure, ion loss and resulting signal reduction pose challenges that limit detection sensitivity in analytical instruments. Techniques to increase sensitivity, such as atmospheric flow tube-mass spectrometry (AFT-MS), extend ion-molecule reaction times but result in significant overall ion loss due to diffusion. Ion manipulation techniques, though challenging at ambient pressure, can mitigate these losses by concentrating ions toward the detector inlet. Using SIMION, ion trajectories were modeled with a voltage gradient applied between a flow tube and a detector, revealing ion focusing at ambient pressure. Experimental verification with an atmospheric flow tube employed both mass spectrometry and Faraday plate detectors to measure ion beam profiles across varying flow rates, tube diameters, and voltage gradients. Application of a voltage gradient effectively directed ions to the axial center of the flow tube, narrowed ion beam width, and increased signal intensity by 5 to 10 times compared to conditions without a voltage gradient. This ion focusing approach shows promise for improving sensitivity in ambient-pressure instruments. This technique has the potential to enhance detection levels in security and forensic applications, with particular benefits for field-portable devices used at checkpoints to identify explosives and drugs.

ambient pressure↗
NASA NTRS1985

Sixty GHz IMPATT diode development

The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.

Ma, Y. E.↗
DOE OSTI2025

Seasonal Reconfiguration of Electrical Distribution Systems to Mitigate the Impact of Electric Vehicle Charging

Power grids face challenges in their infrastructure related to the integration of electric vehicles (EV). In particular, EV charging stations may induce instability in key system parameters such as substantial voltage drops, active power losses, and transformer overload due to high demand during charging periods. This article presents a seasonal reconfiguration strategy based on the differential evolution (DE) algorithm, aimed at enhancing system performance under highly variable and stochastic load profiles, particularly those driven by EV charging. The DEA algorithm is hybridized with the find-union (FU) algorithm to efficiently ensure network radiality throughout the optimization process. The proposed methodology is validated on a hybrid distribution system composed of the IEEE 33-bus network, a modified IEEE 13-bus system, and a specific 13-bus microgrid. Results have demonstrated that seasonal reconfiguration significantly reduces active power losses and mitigates transformer loading during critical demand hours, thereby quantifiably increasing the system’s performance. As an integral component of the proposed approach, an analysis of CO2 emissions associated with energy losses is included, allowing a contextualized assessment of the environmental benefits of seasonal reconfiguration in various geographical areas.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2010

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Welser, Roger E.↗