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NASA NTRS2011

Cryogenic Quenching Process for Electronic Part Screening

The use of electronic parts at cryogenic temperatures (less than 100 C) for extreme environments is not well controlled or developed from a product quality and reliability point of view. This is in contrast to the very rigorous and well-documented procedures to qualify electronic parts for mission use in the 55 to 125 C temperature range. A similarly rigorous methodology for screening and evaluating electronic parts needs to be developed so that mission planners can expect the same level of high reliability performance for parts operated at cryogenic temperatures. A formal methodology for screening and qualifying electronic parts at cryogenic temperatures has been proposed. The methodology focuses on the base physics of failure of the devices at cryogenic temperatures. All electronic part reliability is based on the bathtub curve, high amounts of initial failures (infant mortals), a long period of normal use (random failures), and then an increasing number of failures (end of life). Unique to this is the development of custom screening procedures to eliminate early failures at cold temperatures. The ability to screen out defects will specifically impact reliability at cold temperatures. Cryogenic reliability is limited by electron trap creation in the oxide and defect sites at conductor interfaces. Non-uniform conduction processes due to process marginalities will be magnified at cryogenic temperatures. Carrier mobilities change by orders of magnitude at cryogenic temperatures, significantly enhancing the effects of electric field. Marginal contacts, impurities in oxides, and defects in conductor/conductor interfaces can all be magnified at low temperatures. The novelty is the use of an ultra-low temperature, short-duration quenching process for defect screening. The quenching process is designed to identify those defects that will precisely (and negatively) affect long-term, cryogenic part operation. This quenching process occurs at a temperature that is at least 25 C colder than the coldest expected operating temperature. This quenching process is the opposite of the standard burn-in procedure. Normal burn-in raises the temperature (and voltage) to activate quickly any possible manufacturing defects remaining in the device that were not already rejected at a functional test step. The proposed inverse burn-in or quenching process is custom-tailored to the electronic device being used. The doping profiles, materials, minimum dimensions, interfaces, and thermal expansion coefficients are all taken into account in determining the ramp rate, dwell time, and temperature.

Sheldon, Douglas J.↗

NASA NTRS1971

Some experimental observations on circulating currents in a crossed field plasma accelerator

Experiments on a thermally ionized argon plasma suggest that applying a Lorentz force by means of orthogonal electric and magnetic fields to an electrically conducting fluid flow imposes necessary but not sufficient conditions for acceleration. There are, in fact, many combinations of current and magnetic field which cause decelerations of the fluid. The deceleration arises from a retarding force which may be larger than the applied Lorentz force. The retarding force causing the deceleration is a consequence of currents circulating completely within the fluid. These currents arise from differences in velocity between the central and wall regions of the duct which interact with the imposed magnetic field to produce differences in induced voltages. The observed physical effects of the circulating currents cause a loss in velocity in the central region of the duct, an increase in thermal energy in the sidewall region, and little change in thermal energy near the electrode wall region. For similar velocity profiles, the adverse effects appear to be related to the product of electrical conductivity and velocity, and performance as an accelerator appears to be controlled by the Hoffman loading parameter (i.e., the ratio of the applied to the induced currents).

Jedlicka, J.↗

NASA NTRS1980

Dynamic modeling of brushless dc motors for aerospace actuation

A discrete time model for simulation of the dynamics of samarium cobalt-type permanent magnet brushless dc machines is presented. The simulation model includes modeling of the interaction between these machines and their attached power conditioners. These are transistorized conditioner units. This model is part of an overall discrete-time analysis of the dynamic performance of electromechanical actuators, which was conducted as part of prototype development of such actuators studied and built for NASA-Johnson Space Center as a prospective alternative to hydraulic actuators presently used in shuttle orbiter applications. The resulting numerical simulations of the various machine and power conditioner current and voltage waveforms gave excellent correlation to the actual waveforms collected from actual hardware experimental testing. These results, numerical and experimental, are presented here for machine motoring, regeneration and dynamic braking modes. Application of the resulting model to the determination of machine current and torque profiles during closed-loop actuator operation were also analyzed and the results are given here. These results are given in light of an overall view of the actuator system components. The applicability of this method of analysis to design optimization and trouble-shooting in such prototype development is also discussed in light of the results at hand.

Demerdash, N. A.↗

NASA NTRS1973

First measurements of electron temperature in the D region with a symmetric double probe

Measurement of the altitude profile of electron temperature in the ionospheric D region with the aid of a symmetric double probe flown on a Nike-Cajun payload launched on Oct. 13, 1971. The procedure for determining the electron temperature from the parameters of the double probe's current-voltage characteristic under conditions of nonnegligible ion-atom collision frequencies is described. It is shown that in its first lower ionospheric application the technique of the symmetric double probe has yielded the lowest values of electron temperature yet measured and has provided the very first direct measurement of electron temperature in the D region.

Szuszczewicz, E. P.↗

NASA NTRS2015

Advanced Stirling Convertor Dual Convertor Controller Testing at NASA Glenn Research Center in the Radioisotope Power Systems System Integration Laboratory

NASA Glenn Research Center (GRC) developed a non-nuclear representation of a Radioisotope Power System (RPS) consisting of a pair of Advanced Stirling Convertors (ASC), a Dual Convertor Controller (DCC) EM (engineering model) 2 & 3, and associated support equipment, which were tested in the Radioisotope Power Systems System Integration Laboratory (RSIL). The DCC was designed by the Johns Hopkins University/Applied Physics Laboratory (JHU/APL) to actively control a pair of Advanced Stirling Convertors (ASC). The first phase of testing included a Dual Advanced Stirling Convertor Simulator (DASCS) which was developed by JHU/APL and simulates the operation and electrical behavior of a pair of ASC's in real time via a combination of hardware and software. RSIL provides insight into the electrical interactions between a representative radioisotope power generator, its associated control schemes, and realistic electric system loads. The first phase of integration testing included the following spacecraft bus configurations: capacitive, battery, and supercapacitor. A load profile, created based on data from several missions, tested the RPS and RSIL ability to maintain operation during load demands above and below the power provided by the RPS. The integration testing also confirmed the DCC's ability to disconnect from the spacecraft when the bus voltage dipped below 22 V or exceeded 36 V. Once operation was verified with the DASCS, the tests were repeated with actual operating ASC's. The goal of this integration testing was to verify operation of the DCC when connected to a spacecraft and to verify the functionality of the newly designed RSIL. The results of these tests are presented in this paper.

systems integration↗

NASA NTRS2006

Sensors for Using Times of Flight to Measure Flow Velocities

Thin-film sensors for measuring flow velocities in terms of times of flight are undergoing development. These sensors are very small and can be mounted flush with surfaces of airfoils, ducts, and other objects along which one might need to measure flows. Alternatively or in addition, these sensors can be mounted on small struts protruding from such surfaces for acquiring velocity measurements at various distances from the surfaces for the purpose of obtaining boundary-layer flow-velocity profiles. These sensors are related to, but not the same as, hot-wire anemometers. Each sensor includes a thin-film, electrically conductive loop, along which an electric current is made to flow to heat the loop to a temperature above that of the surrounding fluid. Instantaneous voltage fluctuations in segments of the loop are measured by means of electrical taps placed at intervals along the loop. These voltage fluctuations are caused by local fluctuations in electrical resistance that are, in turn, caused by local temperature fluctuations that are, in turn, caused by fluctuations in flow-induced cooling and, hence, in flow velocity. The differential voltage as a function of time, measured at each pair of taps, is subjected to cross-correlation processing with the corresponding quantities measured at other pairs of taps at different locations on the loop. The cross-correlations yield the times taken by elements of fluid to travel between the pairs of taps. Then the component of velocity along the line between any two pairs of taps is calculated simply as the distance between the pairs of taps divided by the travel time. Unlike in the case of hot-wire anemometers, there is no need to obtain calibration data on voltage fluctuations versus velocity fluctuations because, at least in principle, the correlation times are independent of the calibration data.

Fralick, Gutave↗

NASA NTRS2015

Advanced Stirling Convertor Dual Convertor Controller Testing at NASA Glenn Research Center in the Radioisotope Power Systems System Integration Laboratory

NASA Glenn Research Center developed a nonnuclear representation of a Radioisotope Power System (RPS) consisting of a pair of Advanced Stirling Convertors (ASCs), Dual Convertor Controller (DCC) EMs (engineering models) 2 and 3, and associated support equipment, which were tested in the Radioisotope Power Systems System Integration Laboratory (RSIL). The DCC was designed by the Johns Hopkins University Applied Physics Laboratory (JHU/APL) to actively control a pair of ASCs. The first phase of testing included a Dual Advanced Stirling Convertor Simulator (DASCS), which was developed by JHU/APL and simulates the operation and electrical behavior of a pair of ASCs in real time via a combination of hardware and software. RSIL provides insight into the electrical interactions between a representative radioisotope power generator, its associated control schemes, and realistic electric system loads. The first phase of integration testing included the following spacecraft bus configurations: capacitive, battery, and super-capacitor. A load profile, created based on data from several missions, tested the RPS's and RSIL's ability to maintain operation during load demands above and below the power provided by the RPS. The integration testing also confirmed the DCC's ability to disconnect from the spacecraft when the bus voltage dipped below 22 volts or exceeded 36 volts. Once operation was verified with the DASCS, the tests were repeated with actual operating ASCs. The goal of this integration testing was to verify operation of the DCC when connected to a spacecraft and to verify the functionality of the newly designed RSIL. The results of these tests are presented in this paper.

Controllers↗

NASA NTRS1970

Current conduction in junction gate field effect transistors

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Kim, C.↗

NASA NTRS1987

Earth Radiation Budget Satellite (ERBS) orbiting profiles and Ni-Cd use

The Earth Radiation Budget Satellite (ERBS) is one of the more recently launched satellites of the Goddard Space Flight Center. The flight data of the two 50 Ah NASA standard batteries that are being flown on the ERBS are presented. Trend characteristics of the batteries were collected over a period of two years. The parameters that were trended are: the battery end-of-discharge voltage, time in peak power track, and time in constant current mode. All were plotted versus mission elapsed time. The slopes exhibited by the trended parameters indicate no adverse trends that would signify any appreciable degradation in the batteries.

Enciso, Marlon L.↗

NASA NTRS1976

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗

NASA NTRS1980

Studies of thermochemical water-splitting cycles

Higher temperatures and more isothermal heat profiles of solar heat sources are developed. The metal oxide metal sulfate class of cycles were suited for solar heat sources. Electrochemical oxidation of SO2 and thermochemical reactions are presented. Electrolytic oxidation of sulfur dioxide in dilute sulfuric acid solutions were appropriate for metal oxide metal sulfate cycles. The cell voltage at workable current densities required for the oxidation of SO2 was critical to the efficient operation of any metal oxide metal sulfate cycle. A sulfur dioxide depolarized electrolysis cell for the splitting of water via optimization of the anode reaction is discussed. Sulfuric acid concentrations of 30 to 35 weight percent are preferred. Platinized platinum or smooth platinum gave the best anode kinetics at a given potential of the five materials examined.

Remick, R. J.↗

NASA NTRS1985

Superconducting magnet

Extensive computer based engineering design effort resulted in optimization of a superconducting magnet design with an average bulk current density of approximately 12KA/cm(2). Twisted, stranded 0.0045 inch diameter NbTi superconductor in a copper matrix was selected. Winding the coil from this bundle facilitated uniform winding of the small diameter wire. Test coils were wound using a first lot of the wire. The actual packing density was measured from these. Interwinding voltage break down tests on the test coils indicated the need for adjustment of the wire insulation on the lot of wire subsequently ordered for construction of the delivered superconducting magnet. Using the actual packing densities from the test coils, a final magnet design, with the required enhancement and field profile, was generated. All mechanical and thermal design parameters were then also fixed. The superconducting magnet was then fabricated and tested. The first test was made with the magnet immersed in liquid helium at 4.2K. The second test was conducted at 2K in vacuum. In the latter test, the magnet was conduction cooled from the mounting flange end.

Source record↗

NASA NTRS2012

Free-Mass and Interface Configurations of Hammering Mechanisms

A series of free-mass designs for the ultrasonic/ sonic driller/corer (USDC) has been developed to maximize the transfer of energy from the piezoelectric transducer through the horn to the bit, as well as to minimize potential jamming. A systematic development was made producing novel designs of free-mass configurations where the impact force is spread across a minimal area maximizing the impact on the bit. The designed free masses were made to operate at high temperatures (500 C) as on Venus, and they can be made to operate at extremely low temperature, too. In normal operation, the free mass bounces between the horn and the bit, impacting both repeatedly. The impact stress profile, maximum stress, contact time duration, and the required yielding stress for the materials of the free mass, bit, and horn are all affected by the contact area. A larger contact area results in lower stress in the contact region, and avoids yielding of the materials. However, before the excitation voltage is applied to the transducer, the horn, free mass, and the bit are pressed together. Larger contact area results in a stronger coupling of the bit to the horn transducer, which greatly changes the vibration characteristics of the transducer, and makes the USDC difficult to start. To obtain optimum performance, a catalog of free-mass designs is required, allowing maximum flexibility during trade-off for these conflicting contact area requirements. For this purpose, seven different designs were conceived: point contacts, circular contacts, point/circular contacts, line contacts, ring contacts, line/ring contacts, and dashed line contacts. Besides point/circular and line/ring contacts, the free mass can be designed as any of the above shapes. Depending on the ratio of the diameter to the height, and the free-mass retention method used (the cup or rod), the free mass can be configured with one or more sliding surfaces on the outside or inside diameter surface or both. Matching horn tips and free mass may also offer some utility in maximizing the stress pulse.

Bao, Xiaoqi↗

NASA NTRS2007

Potential Fluctuations and Energetic Ion Production in Hollow Cathode Discharges

Ions with energies significantly in excess of the applied discharge voltage have been reported for many years in hollow cathode discharges. Models of dc potential hills downstream of the cathode and instabilities in postulated double layers in the cathode orifice have been proposed to explain this, but have not been substantiated. Measurements of the dc and rf plasma density and potential profiles near the exit of hollow cathodes by miniature fast-scanning probes suggests that turbulent ion acoustic fluctuations and ionization instabilities in the cathode plume significantly increase the energy of the ions that flow from this region. Increases in the discharge current and/or decreases in the cathode gas flow enhance the amplitude of the fluctuations and increase the number and energy of the energetic ions, which increases the erosion rate of the cathode electrodes. The transition from the quiescent 'spot mode' to the noisy 'plume mode' characteristic of these discharges is found to be a gradual transition of increasing fluctuation amplitudes.

keeper↗

NASA NTRS2005

Performance of High Voltage Modules Under Abuse Operations

The Electric Auxiliary Power Unit (EAPU) or the Advanced Hydraulic Power System (AHPS) is a Shuttle Upgrade program. Of the two battery design approaches that were considered in support of this program, the current paper concentrates on the testing performed on the small-cell approach. Testing performed at both ComDev Space, Canada and at NASA-JSC is described in this paper. Testing included those under mission profile conditions and off-nominal abusive conditions.

Jeevarajan, Judith A.↗

NASA NTRS2009

Two-Dimensional Quantum Model of a Nanotransistor

A mathematical model, and software to implement the model, have been devised to enable numerical simulation of the transport of electric charge in, and the resulting electrical performance characteristics of, a nanotransistor [in particular, a metal oxide/semiconductor field-effect transistor (MOSFET) having a channel length of the order of tens of nanometers] in which the overall device geometry, including the doping profiles and the injection of charge from the source, gate, and drain contacts, are approximated as being two-dimensional. The model and software constitute a computational framework for quantitatively exploring such device-physics issues as those of source-drain and gate leakage currents, drain-induced barrier lowering, and threshold voltage shift due to quantization. The model and software can also be used as means of studying the accuracy of quantum corrections to other semiclassical models.

Govindan, T. R.↗

NASA NTRS1975

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗

NASA NTRS1977

A theoretical study of heterojunction and graded band gap type solar cells

A computer program was designed for the analysis of variable composition solar cells and applied to several proposed solar cell structures using appropriate semiconductor materials. The program simulates solar cells made of a ternary alloy of two binary semiconductors with an arbitrary composition profile, and an abrupt or Gaussian doping profile of polarity n-on-p or p-on-n with arbitrary doping levels. Once the device structure is specified, the program numerically solves a complete set of differential equations and calculates electrostatic potential, quasi-Fermi levels, carrier concentrations and current densities, total current density and efficiency as functions of terminal voltage and position within the cell. These results are then recorded by computer in tabulated or plotted form for interpretation by the user.

Sutherland, J. E.↗