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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Advanced Modeling of Micromirror Devices

The flexure-beam micromirror device (FBMD) is a phase only piston style spatial light modulator demonstrating properties which can be used for phase adaptive corrective optics. This paper presents a complete study of a square FBMD, from advanced model development through final device testing and model verification. The model relates the electrical and mechanical properties of the device by equating the electrostatic force of a parallel-plate capacitor with the counter-acting spring force of the device's support flexures. The capacitor solution is derived via the Schwartz-Christoffel transformation such that the final solution accounts for non-ideal electric fields. The complete model describes the behavior of any piston-style device, given its design geometry and material properties. It includes operational parameters such as drive frequency and temperature, as well as fringing effects, mirror surface deformations, and cross-talk from neighboring devices. The steps taken to develop this model can be applied to other micromirrors, such as the cantilever and torsion-beam designs, to produce an advanced model for any given device. The micromirror devices studied in this paper were commercially fabricated in a surface micromachining process. A microscope-based laser interferometer is used to test the device in which a beam reflected from the device modulates a fixed reference beam. The mirror displacement is determined from the relative phase which generates a continuous set of data for each selected position on the mirror surface. Plots of this data describe the localized deflection as a function of drive voltage.

Michalicek, M. Adrian↗
NASA NTRS2014

Characterization of MgB2 Superconducting Hot Electron Bolometers

Hot-Electron Bolometer (HEB) mixers have proven to be the best tool for high-resolution spectroscopy at the Terahertz frequencies. However, the current state of the art NbN mixers suffer from a small intermediate frequency (IF) bandwidth as well as a low operating temperature. MgB2 is a promising material for HEB mixer technology in view of its high critical temperature and fast thermal relaxation allowing for a large IF bandwidth. In this work, we have fabricated and characterized thin-film (approximately 15 nanometers) MgB2-based spiral antenna-coupled HEB mixers on SiC substrate. We achieved the IF bandwidth greater than 8 gigahertz at 25 degrees Kelvin and the device noise temperature less than 4000 degrees Kelvin at 9 degrees Kelvin using a 600 gigahertz source. Using temperature dependencies of the radiation power dissipated in the device we have identified the optical loss in the integrated microantenna responsible as a cause of the limited sensitivity of the current mixer devices. From the analysis of the current-voltage (IV) characteristics, we have derived the effective thermal conductance of the mixer device and estimated the required local oscillator power in an optimized device to be approximately 1 microwatts.

Superconducting Devices↗
NASA NTRS1997

Unsteady Flow Field in a Multistage Axial Flow Compressor

The flow field in a multistage compressor is three-dimensional, unsteady, and turbulent with substantial viscous effects. Some of the specific phenomena that has eluded designers include the effects of rotor-stator and rotor-rotor interactions and the physics of mixing of velocity, pressure, temperature and velocity fields. An attempt was made, to resolve experimentally, the unsteady pressure and temperature fields downstream of the second stator of a multistage axial flow compressor which will provide information on rotor-stator interaction effects and the nature of the unsteadiness in an embedded stator of a three stage axial flow compressor. Detailed area traverse measurements using pneumatic five hole probe, thermocouple probe, semi-conductor total pressure probe (Kulite) and an aspirating probe downstream of the second stator were conducted at the peak efficiency operating condition. The unsteady data was then reduced through an ensemble averaging technique which splits the signal into deterministic and unresolved components. Auto and cross correlation techniques were used to correlate the deterministic total temperature and velocity components (acquired using a slanted hot-film probe at the same measurement locations) and the gradients, distributions and relative weights of each of the terms of the average passage equation were then determined. Based on these measurements it was observed that the stator wakes, hub leakage flow region, casing endwall suction surface corner region, and the casing endwall region away from the blade surfaces were the regions of highest losses in total pressure, lowest efficiency and highest levels of unresolved unsteadiness. The deterministic unsteadiness was found to be high in the hub and casing endwall regions as well as on the pressure side of the stator wake. The spectral distribution of hot-wire and kulite voltages shows that at least eight harmonics of all three rotor blade passing frequencies are present at this measurement location. In addition to the basic three rotor blade passing frequencies (R1, R2 and R3) and their harmonics, various difference frequencies such as (2R1 -R2) and (2R3-R2) and their harmonics are also observed. These difference frequencies are due to viscous and potential interactions between rotors 1, 2 and 3 which are sensed by both the total pressure and aspirating probes at this location. Significant changes occur to the stator exit flow features with passage of the rotor upstream of the stator. Because of higher convection speeds of the rotor wake on the suction surface of the downstream stator than on the pressure side, the chopped rotor wake was found to be arriving at different times on either side of the stator wake. As the rotor passes across the stator.

Suryavamshi, N.↗
NASA NTRS1999

Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

VanKeuls, Frederick W.↗
NASA NTRS2005

Dusty-Plasma Particle Accelerator

A dusty-plasma apparatus is being investigated as means of accelerating nanometer- and micrometer-sized particles. Applications for the dusty-plasma particle accelerators fall into two classes: Simulation of a variety of rapidly moving dust particles and micrometeoroids in outer-space environments that include micrometeoroid streams, comet tails, planetary rings, and nebulae and Deposition or implantation of nanoparticles on substrates for diverse industrial purposes that could include hardening, increasing thermal insulation, altering optical properties, and/or increasing permittivities of substrate materials. Relative to prior apparatuses used for similar applications, dusty-plasma particle accelerators offer such potential advantages as smaller size, lower cost, less complexity, and increased particle flux densities. A dusty-plasma particle accelerator exploits the fact that an isolated particle immersed in plasma acquires a net electric charge that depends on the relative mobilities of electrons and ions. Typically, a particle that is immersed in a low-temperature, partially ionized gas, wherein the average kinetic energy of electrons exceeds that of ions, causes the particle to become negatively charged. The particle can then be accelerated by applying an appropriate electric field. A dusty-plasma particle accelerator (see figure) includes a plasma source such as a radio-frequency induction discharge apparatus containing (1) a shallow cup with a biasable electrode to hold the particles to be accelerated and (2) a holder for the substrate on which the particles are to impinge. Depending on the specific design, a pair of electrostatic-acceleration grids between the substrate and discharge plasma can be used to both collimate and further accelerate particles exiting the particle holder. Once exposed to the discharge plasma, the particles in the cup quickly acquire a negative charge. Application of a negative voltage pulse to the biasable electrode results in the initiation of a low-current, high-voltage cathode spot. Plasma pressure associated with the cathode spot as well as the large voltage drop at the cathode spot accelerates the charged particles toward the substrate. The ultimate kinetic energy attained by particles exiting the particle holder depends in part on the magnitude of the cathode spot sheath potential difference, which is proportional to the magnitude of the voltage pulse, and the on the electric charge on the dust. The magnitude of the voltage pulse can be controlled directly, whereas the particle s electric charge can be controlled indirectly by controlling the operating parameters of the plasma apparatus.

Foster, John E.↗
NASA NTRS2007

Procedures for Tuning a Multiresonator Photonic Filter

Two procedures have been devised for tuning a photonic filter that comprises multiple whispering-gallery mode (WGM) disk resonators. As used here, tuning signifies locking the filter to a specific laser frequency and configuring the filter to obtain a desired high-order transfer function. The main problem in tuning such a filter is how to select the correct relative loading of the resonators to realize a prescribed filter function. The first of the two procedures solves this problem. As temperature gradients develop during operation, the spectra of individual resonators tend to drift, primarily because of the thermorefractive effect. Thus, there arises the additional problem of how to adjust the tuning during operation to maintain the desired transfer function. The second of the two procedures solves this problem. To implement the procedures, it is necessary to incorporate the resonators into an apparatus like that of Figure 1. In this apparatus, the spectrum of each resonator can be adjusted individually, via the electro-optical effect, by adjusting a bias voltage applied to that resonator. In addition, the positions of the coupling prisms and resonators can be adjusted to increase or reduce the gaps between them, thereby reducing or increasing, respectively, the optical coupling between them. The optical power (Pi) in resonator i is monitored by use of a tracking photodiode. Another tracking diode monitors the power reflected from the input terminal (Pr), and still others monitor the input power (Pin) and output power (Po). The readings of these photodiodes are used to guide the tuning adjustments described in this paper.

Matsko, Andrey↗
NASA NTRSDate not supplied

Electrifying Aircraft Propulsion: Thermal Issues of Megawatt Scale Power Dense Electric Machines and Material Solutions

Aircraft are the last major mode of transportation to undergo electrification for many reasons, where the underlying reason is the sensitivity of aircraft performance to mass. This sensitivity demands that efficient, megawatt (MW)-scale high specific power density powertrains be developed to impact regional, single aisle and larger aircraft that account for the majority of fuel burn in commercial aviation. Developing MW-scale high specific power electric powertrains (machines, cables/busbars and power electronics) remains a significant challenge. While advanced power semiconductors have enabled higher voltages, densities, and operational frequencies this also leads to passing high current through smaller volumes when considering electric machines and power electronics. This poses significant thermal challenges. This is particularly true for electric machines that strive to surpass 13 kW/kg, which studies have shown to be desirable for electric aircraft propulsion. The necessity of handling high current densities to achieve MW power levels dictates that greater than 10kW of waste heat will be generated. Moreover, most of the heat is generated in the stator winding which is a mixture of electrical conductor (copper or aluminum), potting material, magnet wire (electrical) insulation and high voltage electrical insulation. Although the electrical conductor is a fantastic thermal conductor, it is also the source of the heat (carrying the electrical current) and is thermally isolated by the other materials. Simply letting the machine run at increased temperatures is an attractive idea, however the reality is that most of the suitable electric insulations and potting material candidates are not likely to satisfactorily operate at higher temperatures with reasonable life expectancies. The likelihood of developing new polymers that can satisfy the necessary functions (mechanical and electrical), operate at higher temperatures with acceptable lifetime in the near term is small. This has led the researchers at the NASA Glenn Research Center to examine electrically insulative materials in high power destiny electric machines, their thermal environment, and what solutions are realistic from a materials point of view. This presentation will touch on both the thermal challenges of electric machines and NASA Glenn’s research into material solutions.

Electric Aircraft Propulsion↗
NASA NTRS2001

Characterization of Transducers and Resonators under High Drive Levels

In many applications, piezoelectric transducers are driven at AC voltage levels well beyond the level for which the material was nominally characterized. In this paper we describe an experimental setup that allows for the determination of the main transducer or resonator properties under large AC drive. A sinusoidal voltage from a waveform generator is amplified and applied across the transducer/resonator in series with a known high power resistor. The amplitude of applied voltage and the amplitude and the relative phase of the current through the resistor are monitored on a digital scope. The frequency of the applied signal is swept through resonance and the voltage/current signals are recorded. After corrections for the series resistance and parasitic elements the technique allows for the determination of the complex impedance spectra of the sample as a function of frequency. In addition, access to the current signal allows for the direct investigation of non-linear effects through the application of Fourier transform techniques on the current signal. Our results indicate that care is required when interpreting impedance data at high drive level due to the frequency dependence of the dissipated power. Although the transducer/resonator at a single frequency and after many cycles may reach thermal equilibrium, the spectra as a whole cannot be considered an isothermal measurement due to the temperature change with frequency. Methods to correct for this effect will be discussed. Results determined from resonators of both soft and hard PZT and a ultrasonic horn transducer are presented.

transducers↗
DOE OSTI2024

Research and Development to Reduce Impurity Production and Transport of the Impurities to the Target in Linear Plasma Devices Using Helicon Plasma Sources

Linear plasma devices used to test plasma facing materials (PFMs) and components for fusion reactors are often suffering under the production of intrinsic impurities from the plasma source system. Most linear plasma devices use internal electrodes (hollow cathodes, reflex arc, or cascading arc), which typically are the source of the main impurities. The next-generation plasma generators use radio frequency (RF) plasma sources like helicons to avoid internal electrodes. However, high power operation of helicons has proven to result in impurity production due to the high rectified sheath voltages created. Depending on the plasma parameters and magnetic configuration, these impurities can be transported to the target and deposited there to unacceptable high levels. Here, in this contribution, the experimental results from Proto-MPEX are summarized, and the conclusions of the impurity source physics are given. Methods to reduce the impurity production, the impurity transport, and the net deposition on the target are presented. These methods to reduce the impurity production include Faraday screens to reduce the sheath voltage drop, high-Z refractory coatings to reduce the erosion yield, and wall conditioning methods. Methods to reduce the impurity transport include changes in the magnetic configuration as well as electron heating to change axial and radial temperature profiles. Preliminary results on the effectiveness of some of these methods are presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2005

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗
NASA NTRS1999

Thermal Control Using Electrochromism

The applicability of a charge balanced electrochromic device to modulate the frequencies in the thermal infrared region is examined in this study. The device consisted of a transparent conductor, WO3, anode, PMMA/LiClO4 electrolyte, V2O5 cathode and transparent conductor. The supporting structure in the device is SnO2 coated glass and the edges are sealed with epoxy to reduce moisture absorption. The performance evaluation comprised of cyclic voltammetric measurements and determination of transmittance at various wavelengths. The device was subjected to anodic and cathodic polarization by sweeping the potential at a rate of 10 mV/sec from -0.8V to 1.8V. The current versus voltage profile indicated no reaction between -0.5 and +0.5 V. The device is colored green at 1.8 V with a transmittance of 5% at a wavelength, lambda = 900 nm and colorless at -0.8 V with a transmittance of 74% at lambda = 500 nm. The optical modulation is limited to 400-1500 nm and there is no activity in the thermal infrared. The switching time is a function of temperature and time for coloring reaction was slower than the bleaching reaction. The device yielded reproducible values for transmittance when cycled between colored and bleached states by application of 1.8V and -0.8V, respectively.

Vaidyanathan, Hari↗
NASA NTRS2009

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Patterson, Richard L.↗
DOE OSTI2026

Evaluating the Effects of Anode Porous Transport Layer on the Performance and Durability of Anion Exchange Membrane Electrolyzers

As anion exchange membrane systems have emerged as a competitive low temperature electrolysis technology, research has expanded to other components and device integration. In this study, nickel (Ni) and stainless steel (SS)-based porous transport layers (PTLs) are investigated in membrane electrode assemblies (MEAs). Compared to MEAs using Ni, the SS PTL shows higher performance due to less kinetics and residual loss and possibly due to a combination of iron mobility improving oxygen evolution reactivity and electron conduction pathways, as well as higher porosity increasing site access. Voltage decay rates of approximately 144 and 115 μV/h, respectively, for the Ni and SS PTLs are found, although the long-term durability and lifetime implications are convoluted. Voltage breakdown analysis confirms that both PTLs saw significant increases in residual loss possibly due to catalyst/PTL property changes that affected electronic, ionic, and mass transport pathways. For the Ni PTL, a higher proportion of the losses were due to cell kinetics; comparatively, more of the SS PTL losses were due to increases in the high frequency resistance. The experimental findings presented here provide insights on the impact of the PTL materials and their properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1991

Significant reduction in arc frequency biased solar cells: Observations, diagnostics, and mitigation technique(s)

A variety of experiments were performed which identify key factors contributing to the arcing of negatively biased high voltage solar cells. These efforts have led to reduction of greater than a factor of 100 in the arc frequency of a single cell following proper remediation procedures. Experiments naturally lead to and focussed on the adhesive/encapsulant that is used to bond the protective cover slip to the solar cell. An image-intensified charge coupled device (CCD) camera system recorded UV emission from arc events which occurred exclusively along the interfacial edge between the cover slip and the solar cell. Microscopic inspection of this interfacial region showed a bead of encapsulant along this entire edge. Elimination of this encapsulant bead reduced the arc frequency by two orders of magnitude. Water contamination was also identified as a key contributor which enhances arcing of the encapsulant bead along the solar cell edge. Spectrally resolved measurements of the observable UV light shows a feature assignable to OH(A-X) electronic emission, which is common for water contaminated discharges. Experiments in which the solar cell temperature was raised to 85 C showed a reduced arcing frequency, suggesting desorption of H2O. Exposing the solar cell to water vapor was shown to increase the arcing frequency. Clean dry gases such as O2, N2, and Ar show no enhancement of the arcing rate. Elimination of the exposed encapsulant eliminates any measurable sensitivity to H2O vapor.

Upschulte, B. L.↗
NASA NTRS2013

Dual-Polarization, Multi-Frequency Antenna Array for use with Hurricane Imaging Radiometer

Advancements in common aperture antenna technology were employed to utilize its proprietary genetic algorithmbased modeling tools in an effort to develop, build, and test a dual-polarization array for Hurricane Imaging Radiometer (HIRAD) applications. Final program results demonstrate the ability to achieve a lightweight, thin, higher-gain aperture that covers the desired spectral band. NASA employs various passive microwave and millimeter-wave instruments, such as spectral radiometers, for a range of remote sensing applications, from measurements of the Earth's surface and atmosphere, to cosmic background emission. These instruments such as the HIRAD, SFMR (Stepped Frequency Microwave Radiometer), and LRR (Lightweight Rainfall Radiometer), provide unique data accumulation capabilities for observing sea surface wind, temperature, and rainfall, and significantly enhance the understanding and predictability of hurricane intensity. These microwave instruments require extremely efficient wideband or multiband antennas in order to conserve space on the airborne platform. In addition, the thickness and weight of the antenna arrays is of paramount importance in reducing platform drag, permitting greater time on station. Current sensors are often heavy, single- polarization, or limited in frequency coverage. The ideal wideband antenna will have reduced size, weight, and profile (a conformal construct) without sacrificing optimum performance. The technology applied to this new HIRAD array will allow NASA, NOAA, and other users to gather information related to hurricanes and other tropical storms more cost effectively without sacrificing sensor performance or the aircraft time on station. The results of the initial analysis and numerical design indicated strong potential for an antenna array that would satisfy all of the design requirements for a replacement HIRAD array. Multiple common aperture antenna methodologies were employed to achieve exceptional gain over the entire spectral frequency band while exhibiting superb VSWR (voltage standing wave ratio) values. Element size and spacing requirements were addressed for a direct replacement of the thicker, lower-performance, stack ed patch antenna array currently employed for the HIRAD application. Several variants to the multiband arrays were developed that exhibited four, equally spaced, high efficiency, "sweet spot" frequency bands, as well as the option for a high-performance wideband array. The 0.25-in. (≈6.4- mm) thickness of the antenna stack-up itself was achieved through the application of specialized antenna techniques and meta-materials to accomplish all design objectives.

Little, John↗
DOE OSTI2024

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗
DOE OSTI2024

Increasing Multilayer Ceramic Capacitor Lifetime With Bipolar Voltage Cycling

Enhancing the lifetime of multilayer ceramic capacitors (MLCCs) is critical in many aerospace, naval, or electrical grid applications, where device failure could lead to catastrophic consequences. The migration of oxygen vacancies from the ceramic to the electrode interface under constant bias is known to reduce the lifetime of oxide-based MLCCs. Bias cycling presents an opportunity to enhance MLCC lifetime by reducing oxygen vacancy migration. The ideal frequency range is expected to lie between frequencies low enough to avoid self-heating but high enough to avoid interfacial defect formation. However, the impact of low-frequency bipolar voltage cycling (BVC) on MLCC degradation mechanisms has not been well studied. This work investigates the impact of periodic BVC on the degradation of MLCCs through highly accelerated lifetime testing (HALT) on X7R capacitors. HALT tests were conducted at 255 °C and 60 V using different switching frequencies: 0 (dc), 0.1, 2.5, and 10 Hz. BVC was found to improve the lifetime of MLCCs compared to dc test conditions. MLCCs tested at 10-Hz BVC showed a 311% increase in average time to failure compared to the dc case. Impedance spectroscopy shows that BVC decreases the rate of resistance degradation within MLCCs, indicating that oxygen vacancy migration to the electrodes is mitigated. The impedance spectra taken on BVC samples highlight how grain boundaries play a vital role in trapping oxygen vacancies. Periodic cycling causes oxygen vacancies to become trapped at grain boundaries, resulting in oxygen vacancies taking longer to reach the electrode interface and thus increasing MLCC lifetime. This work highlights not only how BVC can be used to increase MLCC lifetime but also how periodically cycling MLCCs could increase lifetime in extreme environments, such as at elevated temperatures and electric fields.

Chuong, Kayla Y.↗
NASA NTRS2010

Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.

Siegel, Peter↗