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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si

Low-temperature photoluminescence studies of 26 cubic SiC films, ranging in thickness from 600 A to 25 microns, grown by CVD on (100)Si are presented. It is suggested that the G band near 1.90-1.92 eV and its phonon side bands G1 and G2 are related to dislocations and extended defects. Formulas for the band-gap shift due to an axial stress have been obtained and applied to the CVD 3C-SiC/Si system. The results indicate that a 1-3-micron transition layer greatly reduces the interface misfit strain, and that biaxial stress in the SiC/Si system depresses the intensity of the no-phonon line.

Choyke, W. J.↗
NASA NTRS1988

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si

Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed. The results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same. It is found that the Si 522/cm phonon from a Si wafer is enhanced in intensity by a factor of 2-3 due to a CVD overlayer of cubic SiC, and that the 3C-SiC longitudinal optical phonon at the Gamma point from SiC/Si samples is enhanced by a factor of two or three following the removal of the Si substrate. The variation of the Raman spectrum with incident power is investigated, and a method for determining the Raman cross section for 3 C-SiC is proposed.

Feng, Z. C.↗
NASA NTRS1989

Patterning of dispenser cathode surfaces to a controlled porosity

A process to pattern slots approximately 1.25 microns in width into 25-micron-thick W films that have been deposited onto flat or concave surfaces is discussed. A 25-micron-thick W film with a high degree of (100) orientation is chemically vapor deposited (CVD) onto a flat or concave Mo mandrel. A 5-micron-thick Al film is deposited onto the CVD W, followed by 2 microns of photoresist. On concave cathodes, XeCl2 laser ablation or X-ray lithography is used to pattern the photoresist, whereas on flat cathodes deep UV lithography can be used. The patterned photoresist serves as the mask in a Cl ion-beam-assisted etching (IBAE) process to pattern the Al. An alternative process is to deposit Al2O3 films onto the W and pattern the Al2O3 using laser ablation. The W film is then patterned to 3-6-micron slot widths using IBAE + ClF3 with the patterned Al or Al2O3 as the mask. Finally, a sputter deposition step is required to close up the slots to approximately 1 micron. The process described is capable of patterning concave dispenser cathodes to a controlled and precise porosity.

Garner, Charles E.↗
NASA NTRS1989

Radio-frequency plasma chemical vapor deposition growth of diamond

Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.

Meyer, Duane E.↗
NASA NTRS1990

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.

Powell, J. A.↗
NASA NTRS1989

Fabrication of light-weighted Si/SiC lidar mirrors

Small models of lightweight Si/SiC lidar mirrors have been fabricated via a scalable and cost-effective chemical vapor deposition (CVD) process. These mirrors are about 7.5 cm in diameter and consist of a Si-cladded SiC faceplate and lightweight structure made of SiC. The lightweight structure consists of an outer hexagonal cell with six triangular inner cells. The mirrors were polished to a figure better than 1/5 of a wave and a finish of better than 5A rms. The CVD route to fabrication of mirrors is fast and has the potential to yield several mirrors in a few weeks time from a signel reactor.

Goela, Jitendra S.↗
NASA NTRS1991

Preventing Vapor Deposition Of The Backs Of Substrates

Technique prevents back-side deposition on substrates in impinging chemical-vapor deposition (CVD) system developed. Applied in selective deposition of silicon on silicon carbide. Inexpensive, does not require any machining to remove excess material, and easy to use. Used successfully in selective depostion of SiC and Si in CVD reactor.

Goela, Jitendra S.↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗
NASA NTRS1990

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗
NASA NTRS1991

Fabrication of lightweight Si/SiC LIDAR mirrors

A new, chemical vapor deposition (CVD) process was developed for fabricating lightweight, polycrystalline silicon/silicon-carbide (Si/SiC) mirrors. The process involves three CVD steps: (1) to produce the mirror faceplate; (2) to form the lightweight backstructure, which is deposited integral to the faceplate; and (3) to deposit a layer of optical-grade material, e.g., Si, onto the front surface of the faceplate. The mirror figure and finish are fabricated into the faceplate.

Goela, Jitendra S.↗
NASA NTRS1989

Chemical vapor deposition for silicon cladding on advanced ceramics

Polycrystalline Si was used to clad several advanced ceramic materials such as SiC, Si3N4, sapphire Al2O3, pyrolytic BN, and Si by a CVD process. The thickness of Si cladding ranged from 0.025 to 3.0 mm. CVD Si adhered quite well to all the above materials except Al3O, where the Si cladding was highly stressed and cracked or delaminated. A detailed material characterization of Si-clad SiC samples showed that Si adherence to SiC does not depend much on the substrate surface preparation; that the thermal cycling and polishing of the samples do not cause delamination; and that, in four-point bend tests, the Si-SiC bond remains intact, with the failure occurring in the Si.

Goela, Jitendra S.↗
NASA NTRS1991

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗
NASA NTRS1991

Oxidation instability of SiC and Si3N4 following thermal excursions

The effect of thermal excursion and thermal cycling on the oxidation stability of chemical vapor-deposited (CVD) SiC and Si3N4 was studied at 1350 C. Thermal cycling alone produced no noticeable change in oxidation kinetics. However, TEM showed that oxide scales grown in cycles consist of alternating layers of SiO2 and Si2N2O. When the oxidation of CVD SiC or Si3N4 at 1350 C was interrupted with a 1.5-h annealing in Ar at 1500 C, the kinetics of reoxidation at 1350 C were found to be drastically increased. The SiC and Si3N4 then oxidized essentially at the same rate, which is over 50 times the preannealing rate, and comparable to the expected oxidation rate of these materials at 1500 C.

Ogbuji, Linus U. J. T.↗
NASA NTRS1992

Silicon carbide fiber reinforced strontium aluminosilicate glass-ceramic matrix composite

A SrO-Al2O3 - 2SrO2 (SAS) glass ceramic matrix is reinforced with CVD SiC continuous fibers. This material is prepared by casting a slurry of SAS glass powder into tapes. Mats of continuous CVD-SiC fibers are alternately stacked with the matrix tapes. This tape-mat stack is warm-pressed to produce a 'green' composite. Organic constituents are burned out of the 'green' composite, and the remaining interim material is hot pressed.

Bansal, Narottam↗
NASA NTRS1992

Extraction of volatiles and metals from extraterrestrial materials

Recent progress in defining the physical, orbital, and chemical properties of the Earth-crossing asteroid and comet population was integrated into an elaborate Monte Carlo model of the fluxes of bodies in the inner Solar System. This model is of use in projecting flight opportunities to as-yet undiscovered near-Earth objects and in assessing the impact hazard to life on Earth and the evolutionary consequences of impacts on the other terrestrial planets. Further progress was made in defining desirable transportation system architectures for the use of non-terrestrial volatiles and metals, including the delivery of propellants to near-Earth space for fueling of space exploration initiative (SEI) type expeditions, the construction and resupply of Solar Power Satellite constellations in various Earth orbits (including geosynchronous earth orbit (GEO) and Highly Eccentric Earth Orbit (HEEO)), and retrieval of He-3 for use as a clean fusion fuel on Earth. These studies suggest a greater future role for SERC in the exploration of space energy sources to meet Earth's 21st-century energy requirements. Laboratory studies of volatilization and deposition of ferrous metal alloys demonstrated deposition of strong iron films from carbonyl chemical vapor deposition (CVD), showing the crucial role of additive gases in governing the CVD process, and pointing the way to specific experiments on extraction and deposition of ferrous metals from nonterrestrial materials.

Lewis, J. S.↗
NASA NTRS1993

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Gokoglu, S. A.↗
NASA NTRS1993

Optical Technologies for UV Remote Sensing Instruments

Over the last decade significant advances in technology have made possible development of instruments with substantially improved efficiency in the UV spectral region. In the area of optical coatings and materials, the importance of recent developments in chemical vapor deposited (CVD) silicon carbide (SiC) mirrors, SiC films, and multilayer coatings in the context of ultraviolet instrumentation design are discussed. For example, the development of chemically vapor deposited (CVD) silicon carbide (SiC) mirrors, with high ultraviolet (UV) reflectance and low scatter surfaces, provides the opportunity to extend higher spectral/spatial resolution capability into the 50-nm region. Optical coatings for normal incidence diffraction gratings are particularly important for the evolution of efficient extreme ultraviolet (EUV) spectrographs. SiC films are important for optimizing the spectrograph performance in the 90 nm spectral region. The performance evaluation of the flight optical components for the Solar Ultraviolet Measurements of Emitted Radiation (SUMER) instrument, a spectroscopic instrument to fly aboard the Solar and Heliospheric Observatory (SOHO) mission, designed to study dynamic processes, temperatures, and densities in the plasma of the upper atmosphere of the Sun in the wavelength range from 50 nm to 160 nm, is discussed. The optical components were evaluated for imaging and scatter in the UV. The performance evaluation of SOHO/CDS (Coronal Diagnostic Spectrometer) flight gratings tested for spectral resolution and scatter in the DGEF is reviewed and preliminary results on resolution and scatter testing of Space Telescope Imaging Spectrograph (STIS) technology development diffraction gratings are presented.

Keski-Kuha, R. A. M.↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. A.↗