Ceramic Capacitor Delamination Problem
Update on ceramic capacitors issues since last years meeting. To including the story behind the issues behind the TIRS and SDO leaky capacitors.
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Update on ceramic capacitors issues since last years meeting. To including the story behind the issues behind the TIRS and SDO leaky capacitors.
Reliability testing of modern tantalum capacitors shows the presence of both types, infant mortality (IM) and wearout (WO) failures. To assure reliable operation, the probability of IM failures should be reduced to below the specified level, and the time of WO inception should be greater than the required useful life of the parts at operation conditions. In this work, several types of MnO2 and polymer cathode tantalum capacitors have been tested at highly accelerated conditions to assess voltage acceleration factors, determine adequate burn-in conditions, and assess the useful life. A modified time dependent dielectric breakdown (TDDB) model has been suggested to explain both types of failure, and a physical mechanism of degradation that is based on migration and reactions of oxygen vacancies explains increase of the defect related, IM failures with the level of stress.
Anomalous charging currents (ACC) in polymer tantalum capacitors may appear as a temporary short circuit that can last for dozens of milliseconds, cause failures to the parts, or cause malfunctions to fast operating electronic systems. Currently, there is no standard technique or set of metrics to evaluate the level of ACC which compares results obtained by different users and manufacturers. In this work, ACC in different types of capacitors were characterized by analysis of current transients during the constant voltage ramp or power surge testing (PST) techniques. It is shown that although the shape of transients may vary at different test conditions, the transfer charge and energy remain practically the same. The level of ACC is characterized by the energy dissipated in the part during PST. Variations of the dissipated energy with moisture content, test temperature, and voltage are evaluated. Effects of different reflow soldering conditions and long-term (up to 3000 hours) storage at 125 °C are discussed.
Two three-phase interleaved inverters have been used in traction drive applications to reduce the current stress in a DC link capacitor bank. In such applications, either carrier-based or space vector modulation is used to select the optimum switching sequences, and the results show 50% less capacitor current than that of a single three-phase inverter. The switching state selection process for this inverter is tedious, and there has been no research to find the optimal switching state. To overcome this challenge, this research employed a simple finite set model predictive control to select the optimum switching sequence for a dual three-phase interleaved topology, called a segmented inverter. The results show that the predictive control algorithm can provide a simple solution and can reduce the current stress by 27% compared with traditional modulation techniques for the segmented inverters.
Enhancing the lifetime of multilayer ceramic capacitors (MLCCs) is critical in many aerospace, naval, or electrical grid applications, where device failure could lead to catastrophic consequences. The migration of oxygen vacancies from the ceramic to the electrode interface under constant bias is known to reduce the lifetime of oxide-based MLCCs. Bias cycling presents an opportunity to enhance MLCC lifetime by reducing oxygen vacancy migration. The ideal frequency range is expected to lie between frequencies low enough to avoid self-heating but high enough to avoid interfacial defect formation. However, the impact of low-frequency bipolar voltage cycling (BVC) on MLCC degradation mechanisms has not been well studied. This work investigates the impact of periodic BVC on the degradation of MLCCs through highly accelerated lifetime testing (HALT) on X7R capacitors. HALT tests were conducted at 255 °C and 60 V using different switching frequencies: 0 (dc), 0.1, 2.5, and 10 Hz. BVC was found to improve the lifetime of MLCCs compared to dc test conditions. MLCCs tested at 10-Hz BVC showed a 311% increase in average time to failure compared to the dc case. Impedance spectroscopy shows that BVC decreases the rate of resistance degradation within MLCCs, indicating that oxygen vacancy migration to the electrodes is mitigated. The impedance spectra taken on BVC samples highlight how grain boundaries play a vital role in trapping oxygen vacancies. Periodic cycling causes oxygen vacancies to become trapped at grain boundaries, resulting in oxygen vacancies taking longer to reach the electrode interface and thus increasing MLCC lifetime. This work highlights not only how BVC can be used to increase MLCC lifetime but also how periodically cycling MLCCs could increase lifetime in extreme environments, such as at elevated temperatures and electric fields.
In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.
Gaging system automatically measures the bulk density of a stored, electrically nonconductive fluid containing varying portions of liquid and vapor. The system employs a three-dimensional wire-mesh capacitor whose capacitance varies with the bulk density of the fluid dielectric medium between the capacitor plates.
Capacitor of extended foil construction performs as a distributed parameter pulse line in which current, amplitude, and period are readily controlled. The capacitor is used as the energy storage element in a pulsed plasma accelerator.
Large area, nonelectrolytic tantalum foil capacitor has capacitance of approximately 1 microfarad and is capable of operating at 125 deg C at 150 volts with an insulation resistance of at least 1 megohm. In tests at a potential of 100 volts, capacitors remained stable through a temperature range from 25 deg to 125 deg C.
Miniature capacitor operates as a differential pressure telemetry sensor during free flight of test model in a hypersonic wind tunnel. The capacitor incorporates a beryllium copper diaphragm. It is also used as an absolute pressure sensor.
Vacuum dielectric capacitor is fabricated from materials with very low temperature coefficients of expansion. This precision capacitor in the 1000-2000 picofarad range has a near-zero temperature coefficient of capacitance, eliminates ion chamber action caused by air ionization in the dielectric, and minimizes electromagnetic field charging effects.
Multilayered capacitor with one-mil thick pyrolytic boron nitride and wrap around sputtered electrodes achieves parallel electrical interconnections in a stacked configuration of 3 to 9 wafers. These capacitors are compact, lightweight, and suitable for operation in high temperatures without supplemental cooling.
Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.
A series of impact tests are described and data presented which characterize the operation of the capacitor-type micrometeoroid flux detectors used on the Meteoroid Technology Satellite (MTS). Capacitor-type detectors with silicon dioxide dielectric thickness of 0.4 and 1.0 microns were tested in the micrometeoroid impact simulator at the Langley Research Center, a 4-MV Van de Graaff electrostatic accelerator. The carbonyl iron projectiles were from 0.5 to 5.0 microns in diameter with velocities from 4 to 10.0 km/sec. The detector bias voltage was varied from -20 to -60 V; some tests were at detector temperatures of 90 C to -100 C; and the angle of impact varied from 0 deg to 75 deg from the normal to the detector. These tests showed that: (1) the detector operation is reliable when the bias voltage is greater than 30 V; (2) after an impact the detector returns to its original condition with an insignificant loss of active area; and (3) the sensitivity of the detector is inversely proportional to the detector thickness. The test results suggest a theoretical model in which the signal is an arc triggered by the impacting projectile, and the detector bias voltage must be high enough to insure that an arc will form.
The performance of typical thermal capacitors, both in earth and orbital environments, was investigated. Techniques which were used to make predictions of thermal behavior in a one-g earth environment are outlined. Orbital performance parameters are qualitatively discussed, and those effects expected to be important under zero-g conditions are outlined. A summary of thermal capacitor applications are documentated, along with significant problem areas and current configurations. An experimental program was conducted to determine typical one-g performance, and the physical significance of these data is discussed in detail. Numerical techniques were employed to allow comparison between analytical and experimental data.
Report describes tests used to determine minimum time for capacitors to fail due to overvoltage and maximum amount of overvoltage that capacitors could sustain without permanent damage.
The effect of thermal cycling on the mechanical failure of bonded ceramic chip capacitors mounted on alumina substrates is studied. It is shown that differential thermal expansion is responsible for the cumulative effects which lead to delayed failure of the capacitors. Harder or higher melting solders are found to be less susceptible to thermal cycling effects, although they are more likely to fail during initial processing operations.
Method allows flatband voltage measurement of capacitors to be taken quickly and precisely while capacitor is subject to desired conditions.