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DOE OSTI2021

Correlated single- and few-electron backgrounds milliseconds after interactions in dual-phase liquid xenon time projection chambers

In this work, we characterize single- and few-electron backgrounds that are observed in dual-phase liquid xenon time projection chambers at timescales greatly exceeding a maximum drift time after an interaction. These instrumental backgrounds limit a detector's sensitivity to dark matter and cosmogenic neutrinos. Using the ~150g liquid xenon detector at Purdue University, we investigate how these backgrounds, produced after 122keV 57 Co Compton interactions, behave under different detector conditions. We find that the rates of single- and few-electron signals follow power-laws with time after the interaction. We observe linearly increasing rates with increased extraction field, and increased rates in the single-electron background with increased drift field. Normalizing the rates to the primary interaction's measured ionization signal, the rates increase linearly with the depth of the interaction. We test the hypothesis that infrared photons (1550nm) would stimulate and accelerate electron emission via photodetachment from impurities, but find that even 1 Watt of infrared light fails to reduce these backgrounds. We thus provide a characterization that can inform background models for low-energy rare event searches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2025

Role of the junction voltage on the overflow current in light-emitting diodes

Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green In⁢Ga⁢N-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the In⁢Ga⁢N QW and Ga⁢N cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Reducing Spontaneous Orientational Polarization via Semiconductor Dilution Improves OLED Efficiency and Lifetime

Spontaneous orientational polarization (SOP) in the electron-transport layer (ETL) of organic light-emitting diodes (OLEDs) is increasingly recognized as a key factor influencing their performance. Here, we show that SOP is dramatically reduced in the common electron-transport material 2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) by coevaporating it together with medium-density polyethylene. Eliminating SOP from the ETL of blue fluorescent OLEDs in this manner reduces their operating voltage by 0.5 V, increases their external quantum efficiency (EQE) by 30%, and leads to a threefold increase in device lifetime. We show that the EQE and lifetime improvements both originate from reduced exciton-polaron annihilation in the emissive layer, and that this leads to a functional relationship between the two quantities that can be used to quantify the rate of annihilation-induced degradation in the device. Furthermore, these results highlight a substantial opportunity to improve OLED performance by controlling SOP through semiconductor dilution and suggest that this capability can be used to systematically isolate and understand exciton-polaron degradation in the pursuit of stable blue OLEDs.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)⁢N light-emitting diodes

Differential carrier lifetime (DCL) measurements were performed on c-plane In 𝑥 ⁢Ga 1−𝑥⁢ N/Ga⁢N single-quantum-well (QW) light-emitting diodes (LEDs) with varying indium-content QWs (x = 13.5%, 16%, 22%), emitting with violet, blue, and green wavelengths. The recombination lifetimes of LEDs were found to increase with increasing indium composition, resulting in increased carrier densities n measured by DCL. Extraction of the A coefficients, which are assumed to not vary with n, and of the effective B(n) and C(n) coefficients of the ABC model of the internal quantum efficiency (IQE) of QWs showed no significant changes in the A coefficient with increasing indium content [In] in the In 𝑥 ⁢Ga 1−𝑥 ⁢N QW, and a reduction in the B(n) and C(n) coefficients with increasing [In]. When looking at the Shockley-Read-Hall (SRH) recombination rate An, the radiative recombination rate B(n)𝑛 2 , and the Auger-Meitner (AM) recombination rate C(n)𝑛 3 , we observed that at any given n, the SRH rate is the same for the three [In] measured, while the radiative rate decreases (by up to approximately 9 times) and the AM rate decreases (by up to approximately 7 times) with increasing indium content. This shows that the larger reduction in radiative recombination rates relative to nonradiative recombination rates with increasing [In] is the largest contributor to the decreased quantum efficiencies of LEDs (the “green gap”) at any given n. While some of the reduction in the effective recombination coefficients B(n) and C(n) can be explained by the reduced wave-function overlaps of the QW with increasing indium content, the larger reduction of B(n) relative to C(n) motivates further study of the intrinsic recombination coefficients 𝐵 0 and 𝐶 0 of bulk In 𝑥 ⁢Ga 1−𝑥 ⁢N alloys and how they are related to the effective recombination coefficients B(n) and C(n) in QWs. The relative contributions of nonradiative recombination are enhanced at any given current density due to the sublinear relationship between the carrier density n and the current density. Thus, the solution to the green gap, up to any intrinsic limitations set by the indium content of the QW, from an IQE perspective, requires the design of long-wavelength (In,Ga)⁢N LEDs with improved wave-function overlaps that can operate with a lower carrier density at any given current density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy

Using electron emission spectroscopy, measurement and analysis were conducted on the energy distribution of vacuum emitted electrons from electrically driven InGaN/GaN green (peak wavelengths 𝜆 ≈ 515nm) light-emitting diodes (LEDs) with and without a prewell superlattice (SL). Here, we report on the detection of a high-energy upper valley at ∼ 1.7eV above the Γ valley from samples with no prewell SL. We propose that these upper valley electrons originate predominantly from trap-assisted Auger recombination (TAAR) in green LEDs, as the intensity of these peaks is found to have quadratic dependence on the carrier density 𝑛 [see Espenlaub et al., J. Appl. Phys. 126, 184502 (2019)]. The high-energy upper valley peak was not observed in the sample with a prewell SL which is attributed to gettering by the prewell SL of still unidentified impurities that act as TAAR centers.

carrier generation & recombination↗

DOE OSTI2023

Local Sn Dipolar-Character Displacements behind the Low Thermal Conductivity in SnSe Thermoelectric

The local atomic structure of SnSe was characterized across its orthorhmbic-to-orthorhombic structural phase transition using x-ray pair distribution function analysis. Substantial Sn displacements with a dipolar character persist in the high symmetry high temperature phase, albeit with a symmetry different from that of the ordered displacements below the transition. The analysis implies that the transition is neither order-disorder nor displacive, but rather a complex crossover. Robust ferro-coupled SnSe intra-layer distortions suggest a ferroelectric-like instability as the driving force. Furthermore, these local symmetry-lowering Sn displacements are likely integral to the ultra-low lattice thermal conductivity mechanism in SnSe.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Structural changes induced by electric currents in a single crystal of Pr 2 CuO 4

We demonstrate an approach to the structural and electronic property modification of perovskites, focusing on Pr 2 CuO 4 , an undoped parent compound of a class of electron-doped copper-oxide superconductors. Currents were passed parallel or perpendicular to the copper oxygen layers with the voltage ramped up until a rapid drop in the resistivity was achieved, a process referred to as “flash.” The current was then further increased tenfold in current-control mode. This state was quenched by immersion into liquid nitrogen. Flash can drive many compounds into different atomic structures with new properties, whereas the quench freezes them into a long-lived state. Single-crystal neutron diffraction of as-grown and modified Pr 2 CuO 4 revealed a √10 ×√10 superlattice due to oxygen-vacancy order. The diffraction peak intensities of the superlattice of the modified sample were significantly enhanced relative to the pristine sample. Raman-active phonons in the modified sample were considerably sharper. Measurements of electrical resistivity, magnetization, and two-magnon Raman scattering indicate that the modification affected only the Pr-O layers, but not the Cu-O planes. These results point to enhanced oxygen-vacancy order in the modified samples well beyond what can be achieved without passing electrical current. Our work opens a new avenue toward electric field/quench control of structure and properties of layered perovskite oxides.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Field and Accelerated Aging of Cracked Solar Cells

Not Available

14 SOLAR ENERGY↗

DOE OSTI2023

In-Situ Photostability Analysis of Perovskite Solar Cells by Time-Evolving Photoluminescence Imaging

In this work we investigate reversible metastabilities and irreversible degradation due to light soaking of triple-cation mixed-halide perovskite p-i-n solar cells. We use spatially resolved luminescence imaging to document the spatial inhomogeneities that exist even in high-performance devices with median efficiencies >20%. We monitor light-soaking degradation in-situ using time-evolving photoluminescence images, electro-luminescence images, and transient photovoltage. Post-stress measurements of external quantum efficiency and Kelvin- probe force microscopy suggest that long-term degradation primarily affects electrode interfaces rather than the absorber layer.

electroluminescence↗

DOE OSTI2022

Selectively patterned Mg-doped GaN by SiN x -driven hydrogen injection

In this work, we demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN x ) films. Activated Mg-doped GaN layers were selectively deactivated by patterned PECVD SiN x films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements were used to optically verify the deactivation of Mg acceptors and showed distinct features corresponding to activated and deactivated Mg in GaN. The method suggested here provides a simple and effective method to achieve patterned Mg-doped GaN regions without thermal and plasma damage, which could cause degradation of device performance. The proposed method could provide a way to achieve future high-performance GaN lateral and vertical devices that rely on laterally patterned doping.

42 ENGINEERING↗

DOE OSTI2023

In situ plasmonic tip preparation and validation techniques for scanning tunneling microscopy

Among the many parts constituting a scanning tunneling microscope, the metallic tip is the component that directly interacts with the specimen and plays a critical role in visualizing the physical quantity of interest. While tip materials such as W and Pt–Ir are commonly used for topographic imaging and their preparation is well-documented, the preparation of plasmonic materials such as Ag for tip-enhanced Raman spectroscopy is relatively less standardized. Furthermore, we present several in situ Ag tip preparation and validation techniques for the microscopist to use depending on their intended application, including atomic resolution imaging, scanning tunneling spectroscopy (STM), and tip-enhanced Raman spectro-microscopy in ultrahigh vacuum. Besides optical applications, these methods are not limited to Ag but also applicable to other STM tip materials.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

Improving solar panel durability through novel panel designs and advanced manufacturing equipment

Work in the project was spread across 4 main themes:1) Improved Understanding of Why Cracks Form and Cause Degradation in Solar Cells: We developed a finite element model which correlated well with experimental determined deflection vs load profiles and which predicted stress profiles vs load level and temperature. These profiles helped to guide brace designs and showed the high stress levels seen in the silicon near the interconnect wire locations as the temperature is cooled below -30C, likely forming "invisible" microcracks. Experiments showed how for polymer backsheet modules, a brief exposure to such low temperatures made modules extremely sensitive to propagation of these microcracks at relatively low load levels, and how thicker and softer encapsulant helped to reduce this crack sensitivity. We showed for some modules that most cracks that are seen under loading had their origin at short, hard to see, V-cracks from soldering damage, and how the shunting from cells with high densities of cracks reduces energy delivery more than Pmax. 2) Improved Durability Testing Methods With Respect to Cracked Cells: We lobbied the PV community throughout the project that IEC 61215 was insufficient to probe the sensitivity of module Pmax degradation due to cracks in that in did not have a test leg that included a crack creation step (static loading) followed by a crack opening step (cyclic loading and/or thermal cycling). We published extensively on how pre- existing cracks opened up with cyclic loading. The new IEC TS 63209-1 ED1 test sequence now include our recommendations, and this should lead to improved module designs and reduced risk for investors. We also published recommendations for a new "Cold Climate Test" sequence to probe the sensitivity of modules to degradation from short microcracks formed when modules see temperatures below -30C followed by front side loading. We participated in several USTAG meetings related to cracked cells, EL testing, and mechanical load testing and provided input to the group to improve new standards under consideration. We also showed how the act of performing an EL test can affect the test results due to heating from the injected current. 3) New Module Designs and Related Manufacturing Methods & Equipment: We demonstrated reduced crack sensitivity on encapsulated cell coupons the benefits of building protective compressive stress into the cells by laminating them in a bent state and then allowing the coupon to flatten out after lamination. Our attempts to scale this to the module level with a more manufacturable sequence did not demonstrate the same positive effects, but we hope that others will follow up with other variations on this bent lamination or bent cooling concept to make more durable modules. 4) New Module Mounting Designs: We explored a range of bracing concepts which pressed on the backsheet to slightly bow the glass outward and place cells in a state of protective compressive stress and to reduce the deflection under front side loads. These successfully reduced cell cracking and crack opening, but high static loads permanently deformed cost-effective braces, after which they provided little benefit. We settled on an elegant & effective solution – the RailPad, where lightweight bracing elements are placed between the mounting rail(s) and the backsheet, and the existing strength of the rails is used to prevent module deflection under load. New construction and retrofit designs were made, and test sites were implemented in FL and MA. We applied for RailPad patent protection.

14 SOLAR ENERGY↗

DOE OSTI2024

Contactless Production Testing of Silicon Solar Cells

Critical cost reductions in silicon solar cells are made by minimizing silver usage in their metal contacts. The reason why is both clear and unavoidable—silver is not only expensive, but also a potential limiting resource for scale-up (the PV industry alone used 10.3 % of the global silver supply in 2020 [1]). The result is solar cells with vanishing electrical contact area that are extremely difficult to test prior to module manufacture, when they must be sorted for quality to maximize power output and reliability of the subsequent modules. This project developed a new measurement instrument that enables the transition to solar cells with very low silver content, including cell designs with both minimal busbars and no busbars at all to electrically contact. The resulting instrument at project completion demonstrated the ability to sort cells with comparable—or better—results than existing technology. Compared to existing cell-test instruments, the new tool has minimal contacting requirements, which lowers the maintenance costs and use of consumable parts. We demonstrated innovative, yet pragmatic, solutions for reporting a comprehensive set of measurement results useful for both cell sorting (going forward in the line for module manufacture) and process control (looking backward in the line to identify cell manufacturing issues from wafer to cell-test). In addition to the traditional current-voltage characterization at cell test—short circuit current, open-circuit voltage, power, efficiency and fill factor—the new tool maintains all the advanced parameter characterization of our existing product line such as a substrate doping measurement, carrier recombination (lifetime) analysis, and surface recombination analysis.

14 SOLAR ENERGY↗

DOE OSTI2025