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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Power System for Venus Surface Exploration

A radioisotope power and cooling system is designed to provide electrical power for a probe operating on the surface of Venus. Most foreseeable electronics devices and sensors cannot operate at the 450 C ambient surface temperature of Venus. Because the mission duration is substantially long and the use of thermal mass to maintain an operable temperature range is likely impractical, some type of active refrigeration may be required to keep electronic components at a temperature below ambient. The fundamental cooling parameters are the cold sink temperature, the hot sink temperature, and the amount of heat to be removed. In this instance, it is anticipated that electronics would have a nominal operating temperature of 300 C. Due to the highly thermal convective nature of the high-density (90 bar CO2) atmosphere, the hot sink temperature was assumed to be 50 C, which provided a 500 C temperature of the cooler's heat rejecter to the ambient atmosphere. The majority of the heat load on the cooler is from the high temperature ambient surface environment on Venus, with a small contribution of heat generation from electronics and sensors. Both thermoelectric (RTG) and dynamic power conversion systems were analyzed, based on use of a standard isotope (General-purpose heat source, or GPHS) brick. For the radioisotope Stirling power converter configuration designed, the Sage model predicts a thermodynamic power output capacity of 478.1 watts, which slightly exceeds the required 469.1 watts. The hot sink temperature is 1200 C, and the cold sink temperature is 500 C. The required heat input is 1740 watts. This gives a thermodynamic efficiency of 27.48 %. It is estimated that the mechanical efficiency of the power converter design is on the order of 85 %, based on experimental measurements taken from 500-watt power class, laboratory-tested Stirling engines. The overall efficiency is calculated to be 23.36 %. The mass of the power converter is estimated at approximately 21.6 kg. Additional information is included in the original extended abstract.

Landis, Geoffrey A.↗
NASA NTRS1975

Advances in superconducting quantum electronic microcircuit fabrication

Standard microelectronic fabrication techniques have been utilized to produce batch quantities of superconducting quantum electronic devices and circuits. The overall goal is a fabrication technology yielding circuits that are rugged and stable and capable of being fabricated controllably and reproducibly in sizeable quantities. Our progress toward this goal is presented, with primary emphasis on the most recent work, which includes the use of electron-beam lithography and techniques of hybrid microelectronics. Several prototype microcircuits have been successfully fabricated. These microcircuits are formed in a thin-film parent material consisting of layers of superconducting and normal metals, and use proximity-effect structures as the active circuit elements.

Kirschman, R. K.↗
NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗
NASA NTRS1993

Differential temperature stress measurement employing array sensor with local offset

The instrument has a focal plane array of infrared sensors of the integrating type such as a multiplexed device in which a charge is built up on a capacitor which is proportional to the total number of photons which that sensor is exposed to between read-out cycles. The infrared sensors of the array are manufactured as part of an overall array which is part of a micro-electronic device. The sensor achieves greater sensitivity by applying a local offset to the output of each sensor before it is converted into a digital word. The offset which is applied to each sensor will typically be the sensor's average value so that the digital signal which is periodically read from each sensor of the array corresponds to the portion of the signal which is varying in time. With proper synchronization between the cyclical loading of the test object and the frame rate of the infrared array the output of the A/D converted signal will correspond to the stress field induced temperature variations. A digital lock-in operation may be performed on the output of each sensor in the array. This results in a test instrument which can rapidly form a precise image of the thermoelastic stresses in an object.

Lesniak, Jon R.↗
NASA NTRSDate not supplied

On the Moon to Stay: Challenges Presented to Power Electronics Technology by Sustained Operations on the Lunar Surface

NASA’s Artemis Program seeks not only to return humans to the Moon for the first time since the 1970’s but also to provide the technological basis for infrastructure that will enable permanent and expanding scientific and industrial exploitation of the Lunar surface. The primary purpose of this infrastructure is to generate and distribute power to a diverse and growing range of scientific and industrial assets, and the keys to success for this function are power management and control circuits that are highly reliable and maintainable for a decade of operation in the extreme thermal, radiation, and dust environment of the Lunar surface. While various combinations of wide band gap semiconductors, electronic devices, circuit topologies, and shielding schemes have been successfully developed for mission environments ranging from low Earth orbit to the Jovian system, power management technology has not been optimized to meet the full combination of mission requirements for the Lunar surface. To accomplish this, NASA requests the dedicated focus of the power electronics industry.

semiconductors↗
NASA NTRS1989

Nuclear fragmentation studies for microelectronic application

A formalism for target fragment transport is presented with application to energy loss spectra in thin silicon devices. Predicted results are compared to experiments with the surface barrier detectors of McNulty et al. The intranuclear cascade nuclear reaction model does not predict the McNulty experimental data for the highest energy events. A semiempirical nuclear cross section gives an adequate explanation of McNulty's experiments. Application of the formalism to specific electronic devices is discussed.

Ngo, Duc M.↗
NASA NTRS1996

Scaling Properties of Algorithms in Nanotechnology

At the present time, several technologies are pressing the limits of microminiature manufacturing. In semiconductor technology, for example, the Intel Pentium Pro (which is used in the Department of Energy's ASCI 'red' parallel supercomputer system) and the DEC Alpha 21164 (which is used in the CRAY T3E) both are fabricated using 0.35 micron process technology. Recently Texas Instruments (TI) announced the availability of 0.25 micron technology chips by the end of 1996 and plans to have 0.18 micron devices in production within two years. However, some significant challenges lie down the road. These include the skyrocketing cost of manufacturing plants, the 0.1 micron foreseeable limit of the photolithography process, quantum effects, data communication bandwidth limitations, heat dissipation, and others. Some related microminiature technologies include micro-electromechanical systems (MEMS), opto-electronic devices, quantum computing, biological computing, and others. All of these technologies require the fabrication of devices whose sizes are approaching the nanometer level. As such they are often collectively referred to with the name 'nanotechnology'. Clearly nanotechnology in this general sense is destined to be a very important technology of the 21st century. The ultimate dream in this arena is 'molecular nanotechnology', in other words the fabrication of devices and materials with most or all atoms and molecules in a pre-programmed position, possibly placed there by 'nano-robots'. This futuristic capability will probably not be achieved for at least two decades. However, it appears that somewhat less ambitious variations of molecular nanotechnology, such as devices and materials based on 'buckyballs' and 'nanotubes' may be realized significantly sooner, possibly within ten years or so. Even at the present time, semiconductor devices are approaching the regime where quantum chemical effects must be considered in design.

Saini, Subhash↗
NASA NTRS2003

Topography and transport properties of oligo(phenylene ethynylene) molecular wires studied by scanning tunneling microscopy

Conjugated phenylene(ethynylene) molecular wires are of interest as potential candidates for molecular electronic devices. Scanning tunneling microscopic study of the topography and current-voltage (I-V) characteristics of self-assembled monolayers of two types of molecular wires are presented here. The study shows that the topography and I-Vs, for small scan voltages, of the two wires are quite similar and that the electronic and structural changes introduced by the substitution of an electronegative N atom in the central phenyl ring of these wires does not significantly alter the self-assembly or the transport properties.

Polymers/chemistry↗
NASA NTRS2007

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Hunter, G. W.↗
NASA NTRS2013

BOK-Printed Electronics

The use of printed electronics technologies (PETs), 2D or 3D printing approaches either by conventional electronic fabrication or by rapid graphic printing of organic or nonorganic electronic devices on various small or large rigid or flexible substrates, is projected to grow exponentially in commercial industry. This has provided an opportunity to determine whether or not PETs could be applicable for low volume and high-reliability applications. This report presents a summary of literature surveyed and provides a body of knowledge (BOK) gathered on the current status of organic and printed electronics technologies. It reviews three key industry roadmaps- on this subject-OE-A, ITRS, and iNEMI-each with a different name identification for this emerging technology. This followed by a brief review of the status of the industry on standard development for this technology, including IEEE and IPC specifications. The report concludes with key technologies and applications and provides a technology hierarchy similar to those of conventional microelectronics for electronics packaging. Understanding key technology roadmaps, parameters, and applications is important when judicially selecting and narrowing the follow-up of new and emerging applicable technologies for evaluation, as well as the low risk insertion of organic, large area, and printed electronics.

Ghaffarian, Reza↗
NASA NTRS2020

Molecular Simulations of Ultrafast Radiation Induced Melting at Metal-Semiconductor Interfaces

Understanding radiation induced ultrafast melting at material interfaces is essential in designing robust electronic devices for aviation/space applications and in laser machining. While it is difficult to achieve the spatial and temporal resolution required to quantify the phenomenon experimentally, simulations can provide the detailed mechanisms of the structural changes that happen during phase transition. In this work, we use molecular simulations to study the effect of radiation damage on silicon carbide (SiC) - tungsten (W) interfaces which is of interest in high power electronics. A multi-scale approach is involved wherein the reactions at the interfaces are quantified using ab-initio molecular dynamics (MD) simulations and classical MD simulations are employed to understand the structural and diffusional changes across the material interface. Finally, coarse-grained Lennard-Jones type models are used to study the larger scale mechanisms and structures obtained due to the induced damages. We show that the response of the material to radiation damage depends on factors such as energy of the incident radiation, thermal properties, and molecular structure of the material.

Ravichandran, Ashwin↗
NASA NTRS1997

Development of a microminiature sorption cooler

The development of a microcooler for operations below 80 K, for low temperature electronic devices requiring small cooling powers of the order of 10 mW is described. A sorption compressor combined with Joule-Thomson (JT) expansion was selected for miniaturization. The advantage of the system is considered to be its absence of moving parts, with the exception of the check valves. This facilitates the scaling down of the system, minimizes interferences and contributes to a long lifetime. The requirements for small scale cooling of low temperature electronics are listed. The sorption compressor and the JT expansion are described. A parameter study is reviewed together with the scaling of the sorption compressor.

Burger, Johannes↗
NASA NTRS1996

The Influence of Reduced Gravity on the Crystal Growth of Electronic Materials

The imperfections in the grown crystals of electronic materials, such as compositional nonuniformity, dopant segregation and crystalline structural defects, are detrimental to the performance of the opto-electronic devices. Some of these imperfections can be attributed to effects caused by Earth gravity during crystal growth process and four areas have been identified as the uniqueness of material processing in reduced gravity environment. The significant results of early flight experiments, i.e. prior to space shuttle era, are briefly reviewed followed by an elaborated review on the recent flight experiments conducted on shuttle missions. The results are presented for two major growth methods of electronic materials: melt and vapor growth. The use of an applied magnetic field in the melt growth of electrically conductive melts on Earth to simulate the conditions of reduced gravity has been investigated and it is believed that the superimposed effect of moderate magnetic fields and the reduced gravity environment of space can result in reduction of convective intensities to the extent unreachable by the exclusive use of magnet on Earth or space processing. In the Discussions section each of the significant results of the flight experiments is attributed to one of the four effects of reduced gravity and the unresolved problems on the measured mass fluxes in some of the vapor transport flight experiments are discussed.

Su, Ching-Hua↗
NASA NTRS2014

Graphene-Based Ultra-Light Batteries for Aircraft

Develop a graphene‐based ultracapacitor prototype that is flexible, thin, lightweight, durable, low cost, and safe and that will demonstrate the feasibility for use in aircraft center dot These graphene‐based devices store charge on graphene sheets and take advantage of the large accessible surface area of graphene (2,600 m2/g) to increase the electrical energy that can be stored. center dot The proposed devices should have the electrical storage capacity of thin‐film‐ion batteries but with much shorter charge/discharge cycle times as well as longer lives center dot The proposed devices will be carbon‐based and so will not have the same issues with flammability or toxicity as the standard lithium‐based storage cells There are two main established methods for the storage and delivery of electrical energy: center dot Batteries - Store energy with electrochemical reactions - High energy densities - Slow charge/discharge cycles - Used in applications requiring large amounts of energy  aircraft center dot Electrochemical capacitors - Store energy in electrochemical double layers - Fast charge/discharge cycles - Low energy densities - Used in electronics devices - Large capacitors are used in truck engine cranking

Graphene↗
NASA NTRS2023

Emperor's new clothes: Novel textile-based supercapacitors using sheep wool fiber as electrode substrate

Textile-based supercapacitors (TSCs) are being used to meet the ever-increasing demand for mobile, safe, and convenient energy sources to power personal electronic devices. To that end, the smart textiles used in wearable technology need to be made from highly conductive yarns that are easily manufacturable. To date, synthetic- and cellulosic-based yarns have been exclusively used for the fabrication of TSCs, while other yarns have not been explored. Here, we used conductive protein-based yarns for TSCs and report on the use of wool coated with Ti 3 C 2 T x MXene as a potential electrode material. To knit TSCs, wool and cotton yarns were coated with MXene flakes and their surfaces were characterized using Scanning Electron Microscopy (SEM) and X-Ray Photoelectron Spectroscopy (XPS). The electrochemical characterization was conducted to examine the performance of wool- and cotton-based MXene electrodes as substrates and determine charge storage and resistive behavior. These tests showed that wool TSCs exhibited more pseudocapacitive behavior, while cotton TSCs exhibited a wider current range. At a scan rate of 5 mV/s, cotton TSCs presented an areal capacitance of 823.9 mF/cm 2 while this value for the wool TSCs was 284 mF/cm 2 . The performance of yarns was also tested under various mechanical deformation conditions and after washing in order to assess the stability of TSCs. This study indicates the potential of protein-based yarns as electrode substrates for integration of MXene to fabricate smart textile-based devices.

Alyssa Grube↗
NASA NTRS2004

Penetration of High Intensity Radiated Fields (HIRF) Into General Aviation Aircraft

The ability to design and achieve electromagnetic compatibility is becoming more challenging with the rapid development of new electronic products and technologies. The importance of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues stems from the fact that the ambient electromagnetic environment has become very hostile; that is, it increases both in density and intensity, while the current trend in technology suggests the number of electronic devices increases in homes, businesses, factories, and transportation vehicles. Furthermore, the operating frequency of products coming into the market continuously increases. While cell phone technology has exceeded 1 GHz and Bluetooth operates at 2.4 GHz, products involving satellite communications operate near 10 GHz and automobile radar systems involve frequencies above 40 GHz. The concern about higher frequencies is that they correspond to smaller wavelengths, therefore electromagnetic waves are able to penetrate equipment enclosure through apertures or even small cracks more easily. In addition, electronic circuits have become small in size, and they are usually placed on motherboards or housed in boxes in very close proximity. Cosite interference and coupling in all electrical and electronic circuit assemblies are two essential issues that have to be examined in every design.

Balanis, Constantine A.↗