Search NASA⌕ Search

SEARCH · Search NASA

Results for “FET”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Effect of RF Filtering on the Performance of Uncoded PCM/PM Telemetry Channels

A method for calculating the increase in received telemetry signal power required to compensate for the use of a radio frequency interference (RFI) filter in front of the DSN receiving system low-noise amplifier is described. The telemetry system for which the degradation is calculated is an uncoded PCM/PM system in which the NRZ data directly modulates the carrier at a modulation level which leaves a discrete carrier. A phase-locked loop in the RF receiver tracks the discrete carrier and coherently demodulates the PCM data. The RFI filter may be a series of Butterworth, Tchebychev, or Bessel low-pass, high-pass, band-pass, or band-reject filters, each with arbitrary bandwidth, number of poles, and, for band-pass or band-reject filters, resonant frequency. The only restriction is that the RFI filter must have only simple poles. Numerical results are presented for the RFI filters the DSN plans to place in front of the S-band FET, S-band maser, and X-band maser low noise amplifiers. The main conclusion is that the filters will produce negligible degradation at data rates below 4 Mbps.

Koerner, M. A.↗
NASA NTRS1984

Integrating IR detector imaging systems

An integrating IR detector array for imaging is provided in a hybrid circuit with InSb mesa diodes in a linear array, a single J-FET preamplifier for readout, and a silicon integrated circuit multiplexer. Thin film conductors in a fan out pattern deposited on an Al2O3 substrate connect the diodes to the multiplexer, and thick film conductors also connect the reset switch and preamplifier to the multiplexer. Two phase clock pulses are applied with a logic return signal to the multiplexer through triax comprised of three thin film conductors deposited between layers. A lens focuses a scanned image onto the diode array for horizontal read out while a scanning mirror provides vertical scan.

Bailey, G. C.↗
NASA NTRS1982

A study of the high frequency limitations of series resonant converters

A transformer induced oscillation in series resonant (SR) converters is studied. It may occur in the discontinuous current mode. The source of the oscillation is an unexpected resonant circuit formed by normal resonance components in series with the magnetizing inductance of the output transformers. The methods for achieving cyclic stability are: to use a half bridge SR converter where q0.5. Q should be as close to 1.0 as possible. If 0.5q1.0, the instability will be avoided if psi2/3q-1/3. The second objective was to investigate a power field effect transistor (FET) version of the SR converter capable of operating at frequencies above 100 KHz, to study component stress and losses at various frequencies.

Stuart, T. A.↗
NASA NTRS1984

A Battery Charger and State of Charge Indicator

A battery charger which has a full wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches, which are programmed to actively shape the input dc line current to be a mirror image of the ac line voltage is discussed. The power circuit operates at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state of charge software programs. The state of charge definition employed is the energy remaining in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictate the use of high power NPN Darlington switching transistors. The power circuit topology is a three switch design which utilizes a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.

Latos, T. S.↗
NASA NTRS1983

A Ka-band GaAs monolithic phase shifter

The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

Sokolov, V.↗
NASA NTRS1984

The ACTS Flight System - Cost-Effective Advanced Communications Technology

The multibeam communications package (MCP) for the Advanced Communications Technology Satellite (ACTS) to be STS-launched by NASA in 1988 for experimental demonstration of satellite-switched TDMA (at 220 Mbit/sec) and baseband-processor signal routing (at 110 or 27.5 Mbit/sec) is characterized. The developmental history of the ACTS, the program definition, and the spacecraft-bus and MCP parameters are reviewed and illustrated with drawings, block diagrams, and maps of the coverage plan. Advanced features of the MPC include 4.5-dB-noise-figure 30-GHz FET amplifiers and 20-GHz TWTA transmitters which provide either 40-W or 8-W RF output, depending on rain conditions. The technologies being tested in ACTS can give frequency-reuse factors as high as 20, thus greatly expanding the orbit/spectrum resources available for U.S. communications use.

Holmes, W. M., Jr.↗
NASA NTRS1982

Integrating 128 element InSb array - Recent results

There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.

Bailey, G.↗
NASA NTRS1984

0.5 W 2-21 GHz monolithic GaAs distributed amplifier

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of the amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 x 300-micron FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The power-added efficiency was 14 percent. The linear gain was 5 plus or minus 1 dB over the same frequency band.

Kim, B.↗
NASA NTRS1983

Communications and logic systems at millimeter wave frequencies

Activities in materials development, lithography, FET experiments, and mixer diode fabrication are reported. In addition, articles are presented which address leakage effects in n-GaAs MESFET's and lateral nonuniform doping in GaAs MESFET's.

Source record↗
NASA NTRS1983

Communications and logic systems at millimeter wave frequencies, summary

During the contract period an AsCl3 epitaxial system used to provide buffer layers for FET structures was constructed. A submicron lithographic processes using deep U.V. techniques was developed and, employing these techniques, a working .5 micron gate device was produced. In addition, the development of submicron mixer diodes continued. The gettering of substrates of a technique to improve the mobility of ionimplantated layers was investigated. The result of this experiment showed a correlation between improved hall mobilities and gettered substrates. Finally, several theoretical studies are reported.

Source record↗
NASA NTRS1983

Status of NASA's multibeam communications technology program

Progress with prototype components for demonstrating an acceptable performance level for multibeam 30/20 GHz satellite communications scheduled for service in 1988 is summarized. Numerous companies were contracted by NASA for the various components and subsystems, which include 20 GHz transmitters, a traveling wave tube transmitter, an IMPATT amplifier, a GaAs FET amplifier, a 30 GHz low noise receiver, a trunking matrix switch, and a baseband processor. The key system is a 20 GHz offset dual reflector antenna with shaped surfaces for multibeam transmission. Tests to date have indicated success at meeting the performance objectives.

Santarpia, D. E.↗
NASA NTRS1984

MOSFET and MOS capacitor responses to ionizing radiation

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Benedetto, J. M.↗
NASA NTRS1983

Operation of integrating indium antimonide linear arrays at 65 K and below

The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

Bailey, G. C.↗
NASA NTRS1984

Two-dimensional infrared detector arrays

An introduction to overall IR array concepts and particular array designs is presented, and examples of laboratory and observational data obtained with IR arrays are given. Hybrid array designs, extrinsic silicon accumulation-mode charge injection devices, and switched-FET or switched-sample photoconductor techniques are summarized. Three recent astronomical observation projects which used IR arrays are examined.

Mccreight, C. R.↗
NASA NTRS1985

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

Jones, B.↗
NASA NTRS1985

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗
NASA NTRS1985

10-30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs traveling-wave power divider/combiner has been designed, fabricated and evaluated. With a design center frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.

Tserng, H. Q.↗