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Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Comment on 'Comparison of observed and calculated implanted ion distributions outside Comet Halley's bow shock' by T. I. Gombosi, M. Neugebauer, A. D. Johnstone, A. J. Coates, and D. E. Huddleston

It is argued that the formulation used by Gombosi (1991) does not distinguish between two fundamental types of resonant interactions (those between cometary pickup ions and LF electromagnetic waves). Two problems arise from using their overly simplified expressions. The wave polarization of the solar wind Alfven wave is not purely right-handed, and values from alpha sub com and alpha sub sw are not well known, nor are the 'polarizations' of the 'backward'-going waves in either case. Gombosi et al. discuss the antisunward vs the sunward propagating solar wind Alfven wave, and assume a reasonable value of 0.2 for alpha sub sw. However, alpha sub com is totally unknown. It is concluded that a more correct analysis of wave polarization can lead to significant changes in the formulation and results from Gombosi et al. In his reply Gombosi argues that his simplified wave-particle interaction model is consistent with Giotto observations and plasma kinetic simulations and it leads to a reasonable approximation of the implanted ion transport coefficients. The more complicated approach suggested by Tsurutani & Thorne (1993) requires the introduction of several ad hoc parameters and it does not lead to any change of the energy diffusion coefficient.

Tsurutani, Bruce T.↗
NASA NTRS1974

GaAs transistors formed by Be or Mg ion implantation

N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

Hunsperger, R. G.↗
DOE OSTI2023

Taming the Pseudoelastic Response of Nitinol Using Ion Implantation

Implantation of Ni 50.5 Ti 49.5 wire with 30 MeV Ni 6+ ions at doses (< 0.1 DPA) typically smaller than employed in the literature is shown to systematically alter the pseudoelastic response, with extrema in Berkovich nanoindentation load (+50%), hysteresis (–60%), and recoverable displacement (–19%) occurring at ~ 3.6 μm below the implantation surface. These extraordinary values are attributed to ~ 10 to 20 nm amorphous clusters that constrain the stress-induced B2-B19' phase transformation. This is substantiated by phase field simulations of crystalline-amorphous composites and molecular dynamics simulations of crystalline-vacancy cluster composites showing the spatial refinement of martensite caused by nm-scale defects. Finally, the results suggest that ion implantation may potentially expand the processing and performance space for NiTi, by creating amorphous defects at smaller length scales than dislocation substructures produced by conventional deformation processing.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Examining metallic glass formation in LaCe:Nb by ion implantation

In order to combine niobium (Nb) with lanthanum (La) and cerium (Ce), Nb ions were deposited within a thin film of these two elements. According to the Hume-Rothery rules, these elements cannot be combined into a traditional crystalline metallic solid. The creation of an amorphous metallic glass consisting of Nb, La, and Ce is then investigated. Amorphous metallic glasses are traditionally made using fast cooling of a solution of molten metals. In this paper, we show the results of an experiment carried out to form a metallic glass by implanting 9 MeV Nb 3+ atoms into a thin film of La and Ce. Prior to implantation, the ion volume distribution is calculated by Monte Carlo simulation using the SRIM tool suite. As a result, using multiple methods of electron microscopy and material characterization, small quantities of amorphous metallic glass are indeed identified.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Silicon on sapphire for ion implantation studies

Van der Pauw or bridge samples are ultrasonically cut from silicon on sapphire wafers. Contact pad regions are implanted with moderately heavy dose of ions. Ion of interest is implanted into sample; and, before being annealed in vacuum, sample is sealed with sputtered layer of silicon dioxide. Nickel or aluminum is sputtered onto contact pad areas and is sintered in nitrogen atmosphere.

Pisciotta, B. P.↗
DOE OSTI2024

Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN

We compare the suitability of various magnesium-based liquid metal alloy ion sources (LMAISs) for scalable focused-ion-beam (FIB) implantation doping of GaN. We consider GaMg, MgSO 4 $\bullet$7H 2 O, MgZn, AlMg, and AuMgSi alloys. Although issues of oxidation (GaMg), decomposition (MgSO 4 $\bullet$7H 2 O), and excessive vapor pressure (MgZn and AlMg) were encountered, the AuMgSi alloy LMAIS operating in a Wien-filtered FIB column emits all Mg isotopes in singly and doubly charged ionization states. We discuss the operating conditions to achieve <20 nm spot size Mg FIB implantation and present Mg depth profile data from time-of-flight secondary ion mass spectrometry. We also provide insight into implantation damage and recovery based on cathodoluminescence spectroscopy before and after rapid thermal processing. Prospects for incorporating the Mg LMAIS into high-power electronic device fabrication are also discussed.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Less-Costly Ion Implantation of Solar Cells

Experiments point way toward more relaxed controls over ion-implanation dosage and uniformity in solar-cell fabrication. Data indicate cell performance, measured by output current density at fixed voltage, virtually same whether implant is particular ion species or broad-beam mixture of several species.

Fitzgerald, D. J.↗
DOE OSTI2018

The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N{sup +} ions at doses of 5 × 10{sup 14}–5 × 10{sup 16} cm{sup –2}. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1982

Retention of ion-implanted-xenon in olivine: Dependence on implantation dose

The diffusion of Xe in olivine, a major mineral in both meteorites and lunar samples, was studied. Xe ions were implanted at 200 keV into single-crystal synthetic-forsterite targets and the depth profiles were measured by alpha particle backscattering before and after annealing for 1 hour at temperatures up to 1500 C. The fraction of implanted Xe retained following annealing was strongly dependent on the implantation dose. Maximum retention of 100% occurred for an implantion dose of 3 x 10 to the 15th power Xe ions/sq cm. Retention was less at lower doses, with (approximately more than or = 50% loss at one hundred trillion Xe ions/sq cm. Taking the diffusion coefficient at this dose as a lower limit, the minimum activation energy necessary for Xe retention in a 10 micrometer layer for ten million years was calculated as a function of metamorphic temperature.

Melcher, C. L.↗
DOE OSTI2015

Non-Contact Measurement of Thermal Diffusivity in Ion-Implanted Nuclear Materials

Knowledge of mechanical and physical property evolution due to irradiation damage is essential for the development of future fission and fusion reactors. Ion-irradiation provides an excellent proxy for studying irradiation damage, allowing high damage doses without sample activation. Limited ion-penetration-depth means that only few-micron-thick damaged layers are produced. Substantial effort has been devoted to probing the mechanical properties of these thin implanted layers. Yet, whilst key to reactor design, their thermal transport properties remain largely unexplored due to a lack of suitable measurement techniques. Here we demonstrate non-contact thermal diffusivity measurements in ion-implanted tungsten for nuclear fusion armour. Alloying with transmutation elements and the interaction of retained gas with implantation-induced defects both lead to dramatic reductions in thermal diffusivity. These changes are well captured by our modelling approaches. Our observations have important implications for the design of future fusion power plants.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2017

3D lattice distortions and defect structures in ion-implanted nano-crystals

The ability of Focused Ion Beam (FIB) techniques to cut solid matter at the nano-scale revolutionized the study of material structure across the life-, earth- and material sciences. But a detailed understanding of the damage caused by the ion beam and its effect on material properties remains elusive. We examine this damage in 3D using coherent X-ray diffraction to measure the full lattice strain tensor in FIB-milled gold nano-crystals. We also found that even very low ion doses, previously thought to be negligible, cause substantial lattice distortions. At higher doses, extended self-organized defect structures appear. Combined with detailed numerical calculations, these observations allow fundamental insight into the nature of the damage created and the structural instabilities that lead to a surprisingly inhomogeneous morphology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The Influence of High-Energy Krypton Ion Implantation Temperature on Structure and Properties of Ni–Ti Alloy

The influence of the temperature of implantation of Ni–Ti shape memory alloy with {sub 84}Kr{sup 15+}ions at the energy E = 147 MeV on its structural-phase state is investigated. At the implantation temperatures 250 and 300°С, within the projective range Rp and out-range area the following processes and phenomena are observed: new formation of the martensitic В19'-phase, formation of nano-sized particles of the R-phase, increase in resistivity due to the formation of radiation-defect structures, strengthening of the alloy in the austenitic structural-phase state, and longer phase-transition temperature intervals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Charging of Ion-Implanted Dielectrics by Electron Irradiation

The charging kinetics of Al{sub 2}O{sub 3} (sapphire) and SiO{sub 2} (α-quartz) dielectrics irradiated by inert gas ions (Ar{sup +}), metal ions (Ga{sup +}), and protons (H{sup +}) has been studied. It has been found that charging kinetics depends considerably on the type of irradiating ion. Also, it has been established that preirradiation of a dielectric target by an ionizing corpuscular radiation (protons, ions) substantially changes the charge characteristics of the dielectric surface. These differences depend on irradiating ion energy, which governs the depth of an accumulated negative charge layer versus the depth of ion preimplantation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Formation of Nanodimensional SiO{sub 2} Films on the Surface of a Free Si/Cu Film System by O{sub 2}{sup +} Ion Implantation

The composition and parameters of energy bands in thin SiO{sub 2} films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO{sub 2} films grown on thick films, the value of E{sub g} for thin SiO{sub 2} films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO{sub 2} film, which arise because of the impossibility of heating the system above 700 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dispersion and absorption of longitudinal electro-kinetic wave in ion-implanted GaN semiconductor plasmas

An analytical study on propagation characteristics of longitudinal electro-kinetic (LEK) waves is presented. Based on multi-fluid model of plasma, we have derived a dispersion relation for LEK waves in colloid laden GaN semiconductor plasmas. It is assumed that ions are implanted to form colloids in the GaN sample. The colloids are continuously bombarded by the plasma particles and stick on them, but they acquire a net negative charge due to relatively higher mobility of electrons. It is found from the dispersion relation that the presence of charged colloids not only modifies the existing modes but also supports new novel modes of LEKWs. It is hoped that the study would enhance understanding on dispersion and absorption of LEKWs and help in singling out the appropriate configurations in which GaN crystal would be better suited for fabrication of microwave devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter

An up-to-11-fold enhancement was observed in the in-magnetic-field critical current density (J{sub c}) in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films on CeO{sub 2}-buffered SrTiO{sub 3} substrates by irradiation with 200- to 750-keV Si and 200-keV B ions. This enhancement indicates that ion beams in the range of 100 to 1000 keV, which are widely used for modifying the conductive properties of semiconducting materials, can significantly improve the vortex-pinning properties in second-generation superconducting wires. Also observed was a scaling relation between J{sub c} and the density of the vacancies (i.e., of Frenkel pairs) produced by the nuclear collisions between incident ions and target atoms, suggesting that this density is a key parameter in determining the magnitude of the J{sub c} enhancement. Also observed was an additional J{sub c} enhancement by a modification of the depth distribution of the vacancies, thus demonstrating the flexibility in controlling artificial pinning center (APC) properties in physical APC introduction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗