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At least 217 records · Page 12
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NASA NTRS2007

Strain Dependence of Photoluminescense of Individual Carbon Nanotubes

We have investigated strain dependence of photoluminescense (PL) spectra of single wall carbon nanotubes (SWNT). Nanotubes were sparsely dispersed in a thin PMMA film applied to acrylic bar, and strained in both compression and extension by bending this bar in either direction in a homebuilt four-point bending rig. The average surface strain was measured with high accuracy by a resistive strain gage applied on top of the film. The near infrared imaging and spectroscopy were performed on the inverted microscope equipped with high numerical aperture reflective objective lens and InGaAs CCD cameras. PL was excited with a diode laser at either 658, 730 or 785 nm, linearly polarized in the direction of the strain. We were able to measure (n,m) types and orientation of individual nanotubes with respect to strain direction and strain dependence of their PL maxima. It was found that PL peak shifts with respect to the values measured in SDS micelles are a sum of three components. First, a small environmental shift due to difference in the dielectric constant of the surrounding media, that is constant and independent of the nanotube type. Second, shift due to isotropic compression of the film during drying. Third, shifts produced by the uniaxial loading of the film in the experiment. Second and third shifts follow expression based on the first-order expansion of the TB hamiltonian. Their magnitude is proportional to the nanotube chiral angle and strain, and direction is determined by the nanotube quantum number. PL strain dependence measured for a number of various nanotube types allows to estimate TB carbon-carbon transfer integral.

Nikolaev, Pavel N.↗
NASA NTRS2007

InGaAsP Avalanche Photodetectors for Non-Gated 1.06 micrometer Photon-Counting Receivers

The efficient detection of single photons at 1.06 micron is of considerable interest for lidar/ladar systems designed for remote sensing an d ranging as well as for free-space optical transmission in photon-st arved applications. However, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon d etection efficiency (approximately 1 - 2%) at 1.06 micron, and InP/In GaAs SPADs designed for telecommunications wavelengths near 1.5 micro n exhibit high dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 micron, we have developed high performance , large area (80 - 200 micron diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 micron and based on a highly reliable planar geometry avalanche photodiode structure. We wil l show that dark count rates are sufficiently low to allow for non-ga ted operation while achieving detection efficiencies far surpassing t hose found for Si SPADs. At a detection efficiency of 10%, 80 micron diameter devices exhibit dark count rates below 1000 Hz and count rate s of at least 3 MHz when operated at -40 C. Significantly higher dete ction efficiencies (30 - 50%) are achievable with acceptable tradeoff s in dark count rate. In this paper, we will also discuss performance modeling for these devices and compare their behavior with longer wav elength InP-based InGaAs ternary absorber SPADs fabricated on a relat ed device design platform.

Itzler, Mark A.↗
NASA NTRS1998

Strained quantum well photovoltaic energy converter

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

Freundlich, Alexandre↗
NASA NTRS2007

640 x 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

Epitaxially grown self-assembled. InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45 degrees and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 micrometers, with peak detectivity reaching approximately 1 X 10(exp 10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640 x 512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature.

quantum dots (QDs)↗
NASA NTRS2006

A G-band 160 GHz T/R Module Concept for Planetary Landing Radar

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

power amplifier↗
NASA NTRS2008

Dot-in-Well Quantum-Dot Infrared Photodetectors

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.

Gunapala, Sarath↗
NASA NTRS2009

Modal Filters for Infrared Interferometry

Modal filters in the approximately equal to 10-micrometer spectral range have been implemented as planar dielectric waveguides in infrared interferometric applications such as searching for Earth-like planets. When looking for a small, dim object ("Earth") in close proximity to a large, bright object ("Sun"), the interferometric technique uses beams from two telescopes combined with a 180 phase shift in order to cancel the light from a brighter object. The interferometer baseline can be adjusted so that, at the same time, the light from the dimmer object arrives at the combiner in phase. This light can be detected and its infrared (IR) optical spectra can be studied. The cancellation of light from the "Sun" to approximately equal to 10(exp 6) is required; this is not possible without special devices-modal filters- that equalize the wavefronts arriving from the two telescopes. Currently, modal filters in the approximately equal to 10-micrometer spectral range are implemented as single- mode fibers. Using semiconductor technology, single-mode waveguides for use as modal filters were fabricated. Two designs were implemented: one using an InGaAs waveguide layer matched to an InP substrate, and one using InAlAs matched to an InP substrate. Photon Design software was used to design the waveguides, with the main feature all designs being single-mode operation in the 10.5- to 17-micrometer spectral range. Preliminary results show that the filter's rejection ratio is 26 dB.

Ksendzov, Alexander↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
NASA NTRS2009

A Multispectral Micro-Imager for Lunar Field Geology

Field geologists routinely assign rocks to one of three basic petrogenetic categories (igneous, sedimentary or metamorphic) based on microtextural and mineralogical information acquired with a simple magnifying lens. Indeed, such observations often comprise the core of interpretations of geological processes and history. The Multispectral Microscopic Imager (MMI) uses multi-wavelength, light-emitting diodes (LEDs) and a substrate-removed InGaAs focal-plane array to create multispectral, microscale reflectance images of geological samples (FOV 32 X 40 mm). Each pixel (62.5 microns) of an image is comprised of 21 spectral bands that extend from 470 to 1750 nm, enabling the discrimination of a wide variety of rock-forming minerals, especially Fe-bearing phases. MMI images provide crucial context information for in situ robotic analyses using other onboard analytical instruments (e.g. XRD), or for the selection of return samples for analysis in terrestrial labs. To further assess the value of the MMI as a tool for lunar exploration, we used a field-portable, tripod-mounted version of the MMI to image a variety of Apollo samples housed at the Lunar Experiment Laboratory, NASA s Johnson Space Center. MMI images faithfully resolved the microtextural features of samples, while the application of ENVI-based spectral end member mapping methods revealed the distribution of Fe-bearing mineral phases (olivine, pyroxene and magnetite), along with plagioclase feldspars within samples. Samples included a broad range of lithologies and grain sizes. Our MMI-based petrogenetic interpretations compared favorably with thin section-based descriptions published in the Lunar Sample Compendium, revealing the value of MMI images for astronaut and rover-mediated lunar exploration.

Nunez, Jorge↗
NASA NTRS2007

Broadband Achromatic Telecentric Lens

A new type of lens design features broadband achromatic performance as well as telecentricity, using a minimum number of spherical elements. With appropriate modifications, the lens design form can be tailored to cover the range of response of the focal-plane array, from Si (400-1,000 nm) to InGaAs (400-1,700 or 2,100 nm) or InSb/HgCdTe reaching to 2,500 nm. For reference, lenses typically are achromatized over the visible wavelength range of 480-650 nm. In remote sensing applications, there is a need for broadband achromatic telescopes, normally satisfied with mirror-based systems. However, mirror systems are not always feasible due to size or geometry restrictions. They also require expensive aspheric surfaces. Non-obscured mirror systems can be difficult to align and have a limited (essentially one-dimensional) field of view. Centrally obscured types have a two-dimensional but very limited field in addition to the obscuration. Telecentricity is a highly desirable property for matching typical spectrometer types, as well as for reducing the variation of the angle of incidence and cross-talk on the detector for simple camera types. This rotationally symmetric telescope with no obscuration and using spherical surfaces and selected glass types fills a need in the range of short focal lengths. It can be used as a compact front unit for a matched spectrometer, as an ultra-broadband camera objective lens, or as the optics of an integrated camera/spectrometer in which the wavelength information is obtained by the use of strip or linear variable filters on the focal plane array. This kind of camera and spectrometer system can find applications in remote sensing, as well as in-situ applications for geological mapping and characterization of minerals, ecological studies, and target detection and identification through spectral signatures. Commercially, the lens can be used in quality-control applications via spectral analysis. The lens design is based on the rear landscape lens with the aperture stop in front of all elements. This allows sufficient room for telecentricity in addition to making the stop easily accessible. The crucial design features are the use of a doublet with an ultra-low dispersion glass (fluorite or S-FPL53), and the use of a strong negative element, which enables flat field and telecentricity in conjunction with the last (field lens) element. The field lens also can be designed to be in contact with the array, a feature that is desirable in some applications. The lens has a 20deg field of view, for a 50-mm focal length, and is corrected over the range of wavelengths of 450-2,300 nm. Transverse color, which is the most pernicious aberration for spectroscopic work, is controlled at the level of 1 m or below at 0.7 m field and 5 m at full field. The maximum chief ray angle is less than 1.7 , providing good telecentricity. An additional feature of this lens is that it is made exclusively with glasses that provide good transmission up to 2,300 nm and even some transmission to 2,500 nm; thus, the lens can be used in applications that cover the entire solar-reflected spectrum. Alternative realizations are possible that provide enhanced resolution and even less transverse color over a narrower wavelength range.

Mouroulis, Pantazis↗
NASA NTRS2009

BRDF Calibration of Sintered PTFE in the SWIR

Satellite instruments operating in the reflective solar wavelength region often require accurate and precise determination of the Bidirectional Reflectance Distribution Function (BRDF) of laboratory-based diffusers used in their pre-flight calibrations and ground-based support of on-orbit remote sensing instruments. The Diffuser Calibration Facility at NASA's Goddard Space Flight Center is a secondary diffuser calibration standard after NEST for over two decades, providing numerous NASA projects with BRDF data in the UV, Visible and the NIR spectral regions. Currently the Diffuser Calibration Facility extended the covered spectral range from 900 nm up to 1.7 microns. The measurements were made using the existing scatterometer by replacing the Si photodiode based receiver with an InGaAs-based one. The BRDF data was recorded at normal incidence and scatter zenith angles from 10 to 60 deg. Tunable coherent light source was setup. Broadband light source application is under development. Gray-scale sintered PTFE samples were used at these first trials, illuminated with P and S polarized incident light. The results are discussed and compared to empirically generated BRDF data from simple model based on 8 deg directional/hemispherical measurements.

Georgiev, Georgi T.↗
NASA NTRS2006

MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Paidi, Vamsi↗
NASA NTRS2006

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Qiu, Yueming↗
NASA NTRS2006

Tunable, Highly Stable Lasers for Coherent Lidar

Practical space-based coherent laser radar systems envisioned for global winds measurement must be very efficient and must contend with unique problems associated with the large platform velocities that the instruments experience in orbit. To compensate for these large platform-induced Doppler shifts in space-based applications, agile-frequency offset-locking of two single-frequency Doppler reference lasers was thoroughly investigated. Such techniques involve actively locking a frequency-agile master oscillator (MO) source to a comparatively static local oscillator (LO) laser, and effectively producing an offset between MO (the lidar slave oscillator seed source, typically) and heterodyne signal receiver LO that lowers the bandwidth of the receiver data-collection system and permits use of very high-quantum-efficiency, reasonably- low-bandwidth heterodyne photoreceiver detectors and circuits. Recent work on MO/LO offset locking has focused on increasing the offset locking range, improving the graded-InGaAs photoreceiver performance, and advancing the maturity of the offset locking electronics. A figure provides a schematic diagram of the offset-locking system.

Henderson, Sammy W.↗
NASA NTRS2010

Characterization of LANDSAT Panels Using the NIST BRDF Scale from 1100 nm to 2500 nm

Many earth observing sensors depend on white diffuse reflectance standards to derive scales of radiance traceable to the St Despite the large number of Earth observing sensors that operate in the reflective solar region of the spectrum, there has been no direct method to provide NIST traceable BRDF measurements out to 2500 rim. Recent developments in detector technology have allowed the NIST reflectance measurement facility to expand the operating range to cover the 250 nm to 2500 nm range. The facility has been modified with and additional detector using a cooled extended range indium gallium arsenide (Extended InGaAs) detector. Measurements were made for two PTFE white diffuse reflectance standards over the 1100 nm to 2500 nm region at a 0' incident and 45' observation angle. These two panels will be used to support the OLI calibration activities. An independent means of verification was established using a NIST radiance transfer facility based on spectral irradiance, radiance standards and a diffuse reflectance plaque. An analysis on the results and associated uncertainties will be discussed.

Markham, Brian↗
NASA NTRS2010

InGaP Heterojunction Barrier Solar Cells

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

Welser, Roger E.↗
NASA NTRS2011

jasonSWIR Calibration of Spectralon Reflectance Factor

Satellite instruments operating in the reflective solar wavelength region require accurate and precise determination of the Bidirectional Reflectance Factor (BRF) of laboratory-based diffusers used in their pre-flight and on-orbit radiometric calibrations. BRF measurements are required throughout the reflected-solar spectrum from the ultraviolet through the shortwave infrared. Spectralon diffusers are commonly used as a reflectance standard for bidirectional and hemispherical geometries. The Diffuser Calibration Laboratory (DCaL) at NASA's Goddard Space Flight Center is a secondary calibration facility with reflectance measurements traceable to those made by the Spectral Tri-function Automated Reference Reflectometer (STARR) facility at the National Institute of Standards and Technology (NIST). For more than two decades, the DCaL has provided numerous NASA projects with BRF data in the ultraviolet (UV), visible (VIS) and the Near infraRed (NIR) spectral regions. Presented in this paper are measurements of BRF from 1475nm to 1625nm obtained using an indium gallium arsenide detector and a tunable coherent light source. The sample was a 2 inch diameter, 99% white Spectralon target. The BRF results are discussed and compared to empirically generated data from a model based on NIST certified values of 6deg directional/hemispherical spectral reflectance factors from 900nm to 2500nm. Employing a new NIST capability for measuring bidirectional reflectance using a cooled, extended InGaAs detector, BRF calibration measurements of the same sample were also made using NIST's STARR from 1475nm to 1625nm at an incident angle of 0deg and at viewing angles of 40deg, 45deg, and 50deg. The total combined uncertainty for BRF in this ShortWave Infrared (SWIR) range is less than 1%. This measurement capability will evolve into a BRF calibration service in SWIR region in support of NASA remote sensing missions. Keywords: BRF, BRDF, Calibration, Spectralon, Reflectance, Remote Sensing.

Georgiev, Georgi T.↗
NASA NTRS2003

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB.

Qui, Yueming↗