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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Broekaert, T. P. E.↗

Biona-C Cell Culture pH Monitoring System

Sensors 2000! is developing a system to demonstrate the ability to perform accurate, real-time measurements of pH and CO2 in a cell culture media in Space. The BIONA-C Cell Culture pH Monitoring System consists of S2K! developed ion selective sensors and control electronics integrated with the fluidics of a cell culture system. The integrated system comprises a "rail" in the Cell Culture Module (CCM) of WRAIR (Space Biosciences of Walter Read Army Institute of Research). The CCM is a Space Shuttle mid-deck locker experiment payload. The BIONA-C is displayed along with associated graphics and text explanations. The presentation will stimulate interest in development of sensor technology for real-time cell culture measurements. The transfer of this technology to other applications will also be of interest. Additional information is contained in the original document.

Friedericks, C.↗

Interfacing Relativistic and Nonrelativistic Methods: A Systematic Sequence of Approximations

A systematic sequence of approximations for the introduction of relativistic effects into nonrelativistic molecular finite-basis set calculations is described. The theoretical basis for the approximations is the normalized elimination of the small component (ESC) within the matrix representation of the modified Dirac equation. The key features of the normalized method are the retention of the relativistic metric and the ability to define a single matrix U relating the pseudo-large and large component coefficient matrices. This matrix is used to define a modified set of one- and two-electron integrals which have the same appearance as the integrals of the Breit-Pauli Hamiltonian. The first approximation fixes the ratios of the large and pseudo-large components to their atomic values, producing an expansion in atomic 4-spinors. The second approximation defines a local fine-structure constant on each atomic centre, which has the physical value for centres considered to be relativistic and zero for nonrelativistic centres. In the latter case, the 4-spinors are the positive-energy kinetic al ly-balanced solutions of the Levy-Leblond equation, and the integrals involving pseudo-large component basis functions on these centres, are set to zero. Some results are presented for test systems to illustrate the various approximations.

Dyall, Ken↗

Theory, Modeling, and Simulation of Semiconductor Lasers

Semiconductor lasers play very important roles in many areas of information technology. In this talk, I will first give an overview of semiconductor laser theory. This will be followed by a description of different models and their shortcomings in modeling and simulation. Our recent efforts in constructing a fully space and time resolved simulation model will then be described. Simulation results based on our model will be presented. Finally the effort towards a self-consistent and comprehensive simulation capability for the opto-electronics integrated circuits (OEICs) will be briefly reviewed.

Ning, Cun-Zheng↗

Novel Design Aspects of the Space Technology 5 Mechanical Subsystem

This paper describes several novel design elements of the Space Technology 5 (ST5) spacecraft mechanical subsystem. The spacecraft structure itself takes a significant step in integrating electronics into the primary structure. The deployment system restrains the spacecraft during launch and imparts a predetermined spin rate upon release from its secondary payload accommodations. The deployable instrument boom incorporates some traditional as well as new techniques for lightweight and stiffness. Analysis and test techniques used to validate these technologies are described. Numerous design choices were necessitated due to the compact spacecraft size and strict mechanical subsystem requirements.

Rossoni, Peter↗

Use of IRI to Model the Effect of Ionosphere Emission on Earth Remote Sensing at L-Band

Microwave remote sensing in the window at 1.413 GHz (L-band) set aside for passive use only is important for monitoring sea surface salinity and soil moisture. These parameters are important for understanding ocean dynamics and energy exchange between the surface and atmosphere, and both NASA and ESA plan to launch satellite sensors to monitor these parameters at L-band (Aquarius, Hydros and SMOS). The ionosphere is an important source of error for passive remote sensing at this frequency. In addition to Faraday rotation, emission from the ionosphere is also a potential source of error at L-band. As an aid for correcting for emission, a regression model is presented that relates ionosphere emission to the integrated electron density (TEC). The goal is to use TEC from sources such as TOPEX, JASON or GPS to obtain estimates of emission over the oceans where the electron density profiles needed to compute emission are not available. In addition, data will also be presented to evaluate the use of the IRI for computing emission over the ocean.

Abraham, Saji↗

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

Energetics of RHESSI X-Class Flares

The thermal and nonthermal energies of several X-class flares seen with the Reuven Ramaty High Energy Solar Spectroscopic Imager (RHESSI) will be presented. The same techniques described by Emslie et al. (JGR, 109, A10104, 2004) are used to take the RHESSI imaging spectroscopic observations and compute the energies in the thermal plasma and in the nonthermal electrons as a function of time throughout the flares. Radiative and conductive cooling rates are estimated and total thermal and nonthermal energies are computed for each flare. Typically, the energy in nonthermal electrons integrated up to the time of peak soft X-ray emission is equal to or exceeds the energy in the thermal plasma at that time. This suggests that energy must have been converted into a form not visible with RHESSI and that the total energy released by the flares may be significantly greater than the sum of energies calculated from the RHESSI observations alone. This conclusion is supported by the high radiative energy seen with SORCE during the impulsive phase of the 28 October 2003 flare. The peak increase in total solar irradiance of 270 mW per square meters measured with SORCE was over two orders of magnitude higher than the peak soft X-ray flux seen with GOES or RHESSI. The implications of this new observation as compared to the energetics derived from the X-ray observations of that flare will be discussed along with the energetics analysis of most of the other X- class flares in October/November 2003.

Dennis, Brian R.↗

Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

Neudeck, Philip G.↗

Chemical Mechanical Polishing of Silicon Carbide

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) as an enabling electronic technology for many aerospace applications. The Lewis team is focusing on the chemical vapor deposition of the thin, single-crystal SiC films from which devices are fabricated. These films, which are deposited (i.e., epitaxially "grown") on commercial wafers, must consist of a single crystal with very few structural defects so that the derived devices perform satisfactorily and reliably. Working in collaboration (NASA grant) with Professor Pirouz of Case Western Reserve University, we developed a chemical-mechanical polishing (CMP) technique for removing the subsurface polishing damage prior to epitaxial growth of the single-crystal SiC films.

Powell, J. Anthony↗

Silicon Carbide Being Developed for High-Definition Television (HDTV) Transmitter Modules

Through a Space Act Agreement, the NASA Lewis Research Center has helped develop the base silicon carbide (SiC) epitaxial growth technology for Westinghouse's efforts to bring silicon carbide products to the marketplace. SiC is a high-temperature, high-voltage semiconductor that can deliver greater than three times the power of conventional silicon devices. The technology was initially disclosed in the 1994 R&T report. NASA Lewis High Temperature Integrated Electronics and Sensors (HTIES) team is developing SiC as a material for advanced semiconductor electronic device applications because SiC-based electronics and sensors can operate in hostile environments where conventional silicon-based electronics cannot function. SiC transmitters hold great promise for television stations because they can convert broadcasts from analog to digital signals. A modular solid-state design provides broadcasters with an option to gradually add modules, increasing the power of their transmitters as they expand their high-definition television (HDTV) coverage. Using these high-power transistors will significantly reduce the space needed for high-power transmitters at television stations and will offer a solid-state solution, reducing long-term maintenance costs. Thus, transmitter manufacturers will be able to abandon their reliance on tube-based technology for high-power transmitters and will be able to build smaller, high-power, solid-state transmitters.

Costello, Donald E.↗

Extension of Coronal Structure Into Interplanetary Space

The evolution of the solar corona and its imprint on the solar wind is investigated by comparing Ulysses radio occultation measurements of path-integrated electron density and density fluctuations in the heliocentric distance range of 21-32R(sub o) with simultaneous measurements of the solasr corona by the HAO Mauna Loa K-coronameter.

solar corona corona radio occultation Ulysses↗

Structural Bus and Release Mechanisms on the ST5 Satellites: Summary and Status

The Space Technology 5 Mechanical System met the challenge of packaging a fully functional science and technology satellite system with its Deployer mechanism into a compact 0.07cu m volume. Three 25 kg satellites were orbited in constellation in March, 2006. The ST5 mechanical system is composed of 1) The Structural Bus; 2) Magnetometer Instrument Boom 3) Spacecraft Deployer Release Mechanism This system includes a highly integrated electronics enclosure as a multifunctional structure; a lightweight, magnetically clean Magnetometer Boom; the first use of Nitinol Shape-Memory Alloy trigger devices for deploying multiple spacecraft; an innovative compliant mount for the umbilical connector and a Deployer mechanism that imparts both separation velocity and mission spin rate to three constellation flying satellites These elements employed cutting-edge design and analysis tools, state-of-the-art testing facilities and proven engineering techniques to meet stringent performance criteria, enabling the mission s success.

Rossoni, Peter↗

Environmental Public Health Surveillance for Exposure to Respiratory Health Hazards: A Joint NASA/CDC Project to Use Remote Sensing Data for Estimating Airborne Particulate Matter Over the Atlanta, Georgia Metropolitan Area

As part of the National Environmental Public Health Tracking Network (EPHTN) the National Center for Environmental Health (NCEH) at the Centers for Disease Control and Prevention (CDC) is leading a project called Health and Environment Linked for Information Exchange (HELiX-Atlanta). The goal of developing the National Environmental Public Health Tracking Network is to improve the health of communities. Currently, few systems exist at the state or national level to concurrently track many of the exposures and health effects that might be associated with environmental hazards. An additional challenge is estimating exposure to environmental hazards such as particulate matter whose aerodynamic diameter is less than or equal to 2.5 micrometers (PM2.5). HELIX-Atlanta's goal is to examine the feasibility of building an integrated electronic health and environmental data network in five counties of Metropolitan Atlanta, GA. NASA Marshall Space Flight Center (NASA/MSFC) is collaborating with CDC to combine NASA earth science satellite observations related to air quality and environmental monitoring data to model surface estimates of PM2.5 concentrations that can be linked with clinic visits for asthma. While use of the Air Quality System (AQS) PM2.5 data alone could meet HELIX-Atlanta specifications, there are only five AQS sites in the Atlanta area, thus the spatial coverage is not ideal. We are using NASA Moderate Resolution Imaging Spectroradiometer (MODIS) satellite Aerosol Optical Depth (AOD) data for estimating daily ground level PM2.5 at 10 km resolution over the metropolitan Atlanta area supplementing the AQS ground observations and filling their spatial and temporal gaps.

Quattrochi, Dale A.↗

The Use of GIS and Remotely Sensed Data in Environmental Public Health Tracking (EPHT): The HELIX-Atlanta Experience

As part of the National Environmental Public Health Tracking Network (EPHTN), the National Center for Environmental Health (NCEH) at the Centers for Disease Control and Prevention (CDC) is leading a project in collaboration with the NASA Marshall Space Flight Center (NASA/MSFC) called Health and Environment Linked for Information Exchange (HELIX-Atlanta). HELIX-Atlanta's goal is to examine the feasibility of building an integrated electronic health and environmental data network in five counties of metropolitan Atlanta, GA. Under HELIX-Atlanta, pilot projects are being conducted to develop methods to characterize exposure; link health and environmental data; analyze the relationship between health and environmental factors; and communicate findings. There is evidence in the research literature that asthmatic persons are at increased risk of developing asthma exacerbations with exposure to environmental factors, including PM(sub 2.5). Thus, HELIX-Atlanta is focusing on methods for characterizing population exposure to PM(sub 2.5) for the Atlanta metropolitan area that could be used in ongoing surveillance. NASA/MSFC is working with CDC to combine NASA earth science satellite observations related to air quality and environmental monitoring data to model surface estimates of fine particulate matter (PM(sub 2.5)) concentrations in a Geographic Information System (GIS) that can be linked with clinic visits for asthma on the aggregated grid level as well as the individual level at the geographic locations of the patients' residences.

Al-Hamdan, Mohammad Z.↗