A critical review of cathodes for rechargeable Mg batteries
This paper provides a critical and rigorous review on Mg battery cathodes, focusing on the impact of structure and composition on magnesiation kinetics.
Mao, Minglei↗
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Accumulative fold-forging (AFF) as a novel severe plastic deformation process to fabricate a high strength ultra-fine grained layered aluminum alloy structure
Highlights: • A novel SPD process named as AFF was introduced. • AFF process is based on the repetitive forging of folded metal foils. • This new method possesses an exceptional capability for fabrication of UFG layered structures. • An AA8006 aluminum alloy layered material with the UFG structure of 200–300 nm was produced. • An enhanced hardness up to ~ 100% was attained owing to the UFG and layered structures. - Abstract: A novel severe plastic deformation (SPD) process termed accumulative fold forging (AFF) is introduced to fabricate a homogenous ultra-fine grained (UFG) layered metal structure by repetitive folding and forging aluminum alloy foil. The present work studies AFF applied to thin foils of AA8006 Al-Fe-Mn aluminum alloy after 26 folding steps to produce a UFG structure containing 67,108,864 layers across a 2 mm thickness. The structure of the layers and grain refinement are studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and scanning-transmission electron microscopy (STEM) analysis. The results indicate a well-bonded inter-layer structure with an average grain size of about 200 nm parallel and 250 nm perpendicular to the forging direction, while dislocation density increased to ~ 7.2 × 10{sup 15} m{sup − 2} following AFF. The mechanical strength of the aluminum foil is evaluated in the terms of indentation hardness testing before and after AFF process. The processed UFGed layered material exhibited an average hardness value of ~ 61.5 Vickers as compared to the initial value of ~ 30.4 Vickers for the annealed foil alloy, which indicates an improvement of ~ 100% due to the contributions of grain refinement, work hardening and interfacial strengthening of the bonded layers.
36 MATERIALS SCIENCE↗
Development of Very Low Frequency Self-Nulling Probe for Inspection of Thick Layered Aluminum Structures
It is clear from simple skin depth considerations that steady state electromagnetic inspection of thick multi-layered conductors requires low frequency excitation. Conventional pickup sensors, however, lose sensitivity at lower frequencies. Giant magneto resistive materials offer a unique alternative for very low frequency electromagnetic NDE due to their high sensitivity to low frequency fields, small size, ease of use, and low cost. This paper outlines the development and testing of a Very Low Frequency Self-Nulling Probe incorporating a GMR sensor. The initial test results show flaw detectability at depths up to 1 cm in aluminum 2024. Optimization of the probe design based upon finite element modeling and GMR sensor characteristics (including hysteresis, linearity and saturation) is under way.
Wincheski, Buzz↗
Magnetic and Resonant Properties of Fe–Bi Films
Film structures in the Fe–Bi system have been studied experimentally. The magnetic state of the two-layer structures is shown by electron magnetic resonance to be dependent on the order of depositing magnetic and nonmagnetic layers. The three-layer structures demonstrate the effect of the exchange bias, the value of which is dependent on the bismuth interlayer thickness.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Comparing Morphological Evolution during Tensile Deformation of Two Precise Polyethylenes via 2D Fitting of in Situ X-ray Scattering
Some types of precise polyethylenes, or linear polyethylenes containing precisely periodic functional groups, exhibit significant strain hardening under tensile deformation. In this work we perform in situ X-ray scattering during tensile deformation of two precise polyethylenes: one with pendant carboxylic acid groups every 21st carbon (p21AA) and another with pendant imidazolium bromide groups every 15th carbon (p15ImBr). p21AA exhibits significant strain hardening and its layered structure orients with the layer normal along the tensile axis, while p15ImBr does not exhibit strain hardening and its layer normal orients perpendicular to the tensile axis. Quantitative evaluation of the 2D fiber patterns shows that p21AA undergoes a morphological transition, from a semicrystalline structure to a nanofibrillar structure, while the morphology of p15ImBr reorients and the chain folding structure is preserved. This suggests that fibrillization plays an important role in the strain hardening mechanism.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Structural Evolution of Molybdenum Disulfide Prepared by Atomic Layer Deposition for Realization of Large Scale Films in Microelectronic Applications
Molybdenum disulfide (MoS 2 ) films are attractive materials for electronic and optoelectronic devices, but the temperatures used in the chemical vapor deposition (CVD) of these materials are too high for device integration. Recently, a low-temperature atomic layer deposition (ALD) process was demonstrated for growth of MoS 2 films at 200 °C using MoF 6 and H 2 S. However, the as-deposited films were amorphous and required annealing to obtain the desired layered structure. The MoS 2 films were sulfur-deficient; however, after annealing the crystallinity improved. To study the structure of these films and the process by which they crystallize, we performed in this work X-ray absorption spectroscopy and high-energy X-ray scattering experiments on both as-deposited and annealed MoS 2 films. Analysis indicated that molybdenum atoms in the as-deposited films were well coordinated with sulfur but not well coordinated with other molybdenum atoms when compared to a crystalline reference. Further analysis revealed clusters of the sulfur-rich phase [Mo 3 S(S 6 ) 2 ] 2– , which decomposed after annealing in H 2 and H 2 S at 400 and 600 °C. When compared to the sulfur-deficient films reported previously for this ALD process, the sulfur-rich phase found here indicates that nucleation on the substrate plays an important role in the resulting film stoichiometry, which could be tuned to produce higher quality films for microelectronic applications.
36 MATERIALS SCIENCE↗
Silicon Alignment Pins: An Easy Way to Realize a Wafer-To-Wafer Alignment
A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
Jung-Kubiak, Cecile↗
Wafer-To-Wafer Alignment Method
A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
Jung-Kubiak, Cecile↗
Computer Program Re-layers Engineering Drawings
RULCHK computer program aids in structuring layers of information pertaining to part or assembly designed with software described in article "Software for Drawing Design Details Concurrently" (MFS-28444). Checks and optionally updates structure of layers for part. Enables designer to construct model and annotate its documentation without burden of manually layering part to conform to standards at design time.
Crosby, Dewey C., III↗
MMIC DHBT Common-Base Amplifier for 172 GHz
Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.
Paidi, Vamsi↗
Process Engineering to Increase the Layered Phase Concentration in the Immediate Products of Flame Spray Pyrolysis
Flame-spray-pyrolysis (FSP) is a robust and scalable process to synthesize particles at the commodity-scale. FSP has been used to produce the precursor powders which were converted to the layered structure $(R\bar{3m} \text { phase})$ by a postannealing step in making nickel-rich cathode materials (NCMs). Theoretically, the high flame temperature (normally >1500 K) in FSP can provide adequate energy for the phase conversion from rock-salt to layered structures and potentially enables one-step synthesis. However, the high flame temperature is a critical issue to cause lithium loss and structural degradation, preventing the formation of the layered phase. Here, guided by the gaseous nucleation theory, we implemented several FSP processes with different solution recipes. The layered phase concentration in the as-burned products can be increased with the solution enthalpies. By adding a rapid quench step to suppress the lithium loss and phase degradation, the layered phase can be further increased. This work contributes new ideas to innovating process regarding the process efficiency and throughput of manufacturing cathode materials at a large scale.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
The limiting layer of fish scales: structure and properties
Fish scales serve as a flexible natural armor that have received increasing attention across the materials community. Most efforts in this area have focused on the composite structure of the predominately organic elasmodine, and limited work addresses the highly mineralized external portion known as the Limiting Layer (LL). This coating serves as the first barrier to external threats and plays an important role in resisting puncture. In this investigation the structure, composition and mechanical behavior of the LL were explored for three different fish, including the arapaima (Arapaima gigas), the tarpon (Megalops atlanticus) and the carp (Cyprinus carpio). The scales of these three fish have received the most attention within the materials community. Features of the LL were evaluated with respect to anatomical position to distinguish site-specific functional differences. Results show that there are significant differences in the surface morphology of the LL from posterior and anterior regions in the scales, and between the three fish species. The calcium to phosphorus ratio and the mineral to collagen ratios of the LL are not equivalent among the three fish. Results from nanoindentation showed that the LL of tarpon scales is the hardest, followed by the carp and the arapaima and the differences in hardness are related to the apatite structure, possibly induced by the growth rate and environment of each fish.
Arola, Dwayne D.↗
High-Pressure Behavior of Silver Fluorides up to 40 GPa
A combined experimental–theoretical study of silver(I) and silver(II) fluorides under high pressure is reported. For Ag I , the CsCl-type structure is stable to at least 39 GPa; the overtone of the IR-active mode is seen in the Raman spectrum. Its Ag II F 2 sibling is a unique compound in many ways: it is more covalent than other known difluorides, crystallizes in a layered structure, and is enormously reactive. Using X-ray diffraction and guided by theoretical calculations (density functional theory), we have been able to elucidate crystal structures of high-pressure polymorphs of AgF 2 . The transition from ambient pressure to an unprecedented nanotubular structure takes place via an intermediate orthorhombic layered structure, which lacks an inversion center. Here, the observed phase transitions are discussed within the broader framework of the fluorite → cotunnite → Ni 2 In series, which has been seen for other metal difluorides.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Mixed-Valent Copper Chalcogenides: Tuning Structures and Electronic Properties Using Multiple Anions
A series of mixed-anion copper chalcogenides have been prepared using solid-state methods including ACu 4.2 TeS 2 (A = K, Rb, Cs), which adopt the KCu 4 S 3 structure type. The mixedanion motif has an expanded sublattice, relative to KCu 4 S 3 , that can accommodate additional Cu atoms at its interstitial sites that are unoccupied in the parent structure. The variable temperature transport shows that the materials are p-type metals with carrier densities on the order of 10 21 cm -3 and room-temperature electrical conductivity as high as 4000 S cm -1 . Band structures calculated using density functional theory corroborate the experimental data and indicate that the interstitial Cu atoms lower the carrier concentration and increase the Fermi level of the materials. The layered structure has Te and S atoms occupying unique sites within the ACu 4.2 TeS 2 structure, where relatively hard S 2- anions prefer Wyckoff positions where they can form energetically favorable acid-base interactions with hard alkali cations. The phenomenon is observed in the related K 3 Cu 8 Te 2 S 4 system, which also has a fully ordered layered structure. Here, we believe that the report provides new chemical guidelines for targeting ordered multianion structures, as well as a unique method for tuning the electronic properties of metallic chalcogenides.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Structure of Layers Formed by [2-(3,6-Disubstituted-9 H -carbazol-9-yl)ethyl]phosphonic Acids on Metal Oxides
[2-(9 H -Carbazol-9-yl)ethyl]phosphonic acid (2PACz) and its derivatives are being used extensively as hole-transport layers in organic and perovskite solar cells due to their ability to modify electrode work function, surface wettability, and in some cases, to improve active-layer adhesion, while minimizing interfacial energy losses. The orientation and coverage of surface modifiers significantly impact these functional properties; however, the detailed structure and packing in these overlayers are challenging to investigate, leading to a lack of understanding of how this structure and packing influence performance and limiting the ability to rationally design molecular modifiers. Here, we investigate monolayers of 2-(9 H -carbazol-9-yl)ethyl phosphonic acid derivatives (from here on referred to as X-2PACz) on indium tin oxide (ITO) and alpha phase aluminum oxide (α-Al 2 O 3 ) using a combination of X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, and X-ray reflectivity (XRR). By correlating elemental ratios, molecular orientation, and electron density profiles, we directly quantify surface coverage, layer thickness, and molecular tilt across a series of chemically related monolayers. We find that 2PACz and the X-2PACz derivatives form dense monolayers on α-Al 2 O 3 and ITO, with similar surface coverages on either substrate that are inversely proportional to molecular steric bulk. These surface coverage results indicate that X-2PACz is sterically limited in its monolayer surface packing density, as opposed to site limited. Despite surface packing density differences between molecules, the NEXAFS data show a constant average molecular orientation of 61° to 65° between the plane of the carbazole and the substrate for all the molecules on both substrates. These results increase our general understanding of 2PACz derivatives as they become increasingly useful in high performance solar cells.
NEXAFS↗
Propagation of surface waves along a dielectric layer in a photorefractive crystal with a diffusion mechanism for the nonlinearity formation
It is shown that TM-polarised surface waves, which exhibit a different character of their attenuation, can propagate along a dielectric layer separating photorefractive crystals with a diffusion mechanism of the nonlinearity formation. The wave profiles can be symmetric and antisymmetric with respect to the centre of the three-layer structure. For all considered wave types, dispersion equations are derived. The dependences of the propagation constant on the characteristics of the layered structure are found for long-wavelength surface waves in an explicit analytical form, and the conditions for their existence are revealed. The influence of the temperature and thickness of the dielectric layer on the propagation regimes of surface waves and their characteristics is analysed. (paper)
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Model-Based Reconstruction for Multi-Frequency Collimated Beam Ultrasound Systems
Collimated beam ultrasound systems are a technology for imaging inside multi-layered structures such as geothermal wells. These systems work by using a collimated narrow-band ultrasound transmitter that can penetrate through multiple layers of heterogeneous material. A series of measurements can then be made at multiple transmit frequencies. However, commonly used reconstruction algorithms such as Synthetic Aperture Focusing Technique (SAFT) tend to produce poor quality reconstructions for these systems both because they do not model collimated beam systems and they do not jointly reconstruct the multiple frequencies. Here, in this article, we propose a multi-frequency ultrasound model-based iterative reconstruction (UMBIR) algorithm designed for multi-frequency collimated beam ultrasound systems. The combined system targets reflective imaging of heterogeneous, multi-layered structures. For each transmitted frequency band, we introduce a physics-based forward model to accurately account for the propagation of the collimated narrow-band ultrasonic beam through the multi-layered media. We then show how the joint multi-frequency UMBIR reconstruction can be computed by modeling the direct arrival signals, detector noise, and incorporating a spatially varying image prior. Results using both simulated and experimental data indicate that multi-frequency UMBIR reconstruction yields much higher reconstruction quality than either single frequency UMBIR or SAFT.
47 OTHER INSTRUMENTATION↗