Search NASA⌕ Search

SEARCH · Search NASA

Results for “Lifetime”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Ab initio calculations of low-energy quasiparticle lifetimes in bilayer graphene

Motivated by recent experimental results we calculate from first-principles the lifetime of low-energy quasiparticles in bilayer graphene (BLG). Here, we take into account the scattering rate arising from electron-electron interactions within the GW approximation for the electron self-energy and consider several p-type doping levels ranging from 0 to ρ ≈ 2.4 × 10 12 holes/cm 2 . In the undoped case we find that the average inverse lifetime scales linearly with energy away from the charge neutrality point, with values in good agreement with experiments. The decay rate is approximately three times larger than in monolayer graphene, a consequence of the enhanced screening in BLG. In the doped case, the dependence of the inverse lifetime on quasiparticle energy acquires a non-linear component due to the opening of an additional decay channel mediated by acoustic plasmons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution

Here we introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S 21 roll-off slower than –20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles.

42 ENGINEERING↗

Lattice anharmonicity effects in fluorite oxide single crystals and anomalous increase in phonon lifetime in ceria at elevated temperature

Here, we investigate the temperature dependence of the frequency and linewidth of the triply degenerate T 2g zone-centered optical phonon in flux-grown ceria and hydrothermally synthesized thoria single crystals from room temperature to 1273 K using Raman spectroscopy. Both crystals exhibit an expected increase in the phonon linewidth with temperature due to enhanced phonon–phonon scattering. However, ceria displays an anomalous linewidth reduction in the temperature range of 1023–1123 K. First-principles phonon linewidth calculations considering cubic and quartic phonon interactions within temperature-independent phonon dispersion fail to describe this anomaly. A parameterization of the temperature-dependent second-order interatomic force constants based on previously reported phonon dispersion measured at room and high temperatures predicts a deviation from the monotonic linewidth increase, albeit at temperatures lower than those observed experimentally for ceria. The qualitative agreement in the trend of temperature-dependent linewidth suggests that lattice anharmonicity-induced phonon renormalization plays a role in phonon lifetime. Specifically, a change in the overlap between softened acoustic and optical branches in the dispersion curve reduces the available phonon scattering phase space of the Raman-active mode at the zone center, leading to an increased phonon lifetime within a narrow temperature interval. These findings provide insights into higher-order anharmonic interactions in ceria and thoria, motivating further investigations into the role of anharmonicity-induced phonon renormalization on phonon lifetimes at high temperatures.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Lifetime study of the ColdADC for the Deep Underground Neutrino Experiment

ColdADC is a custom ASIC digitizer implemented in 65 nm CMOS technology using specialized techniques for long-term reliability in cryogenic environments. ColdADC was developed for use in the DUNE Far Detector complex, which will consist of four liquid argon time projection chambers. Each contains 17 kilotons liquid argon as the target material in order to measure neutrino oscillations. Approximately 40,000 ColdADC ASICs will be installed for DUNE in the first two large detectors and will be operated at cryogenic temperatures during the experiment without replacement. The lifetime of the ColdADC is a critical parameter affecting the data quality and physics sensitivity of the experiment. A measurement of the lifetime of the ColdADC was carried out, and the results shown in this paper assure orders of magnitude longer lifetime of the ColdADC than the planned operation time of the detectors.

Front-end electronics for detector readout↗

Electric Field Control of Phonon Lifetimes and Thermal Conductivity in Relaxor-Based Ferroelectric

The demand for high energy efficiency drives intense interest in thermal-management technology. Phonons are a major contributor to heat transfer in solids and controlling them through external stimuli is a key challenge for thermal management due to their weak interactions with applied fields. We report significant changes in phonon transport with the application of an electric field over a broad temperature range in a relaxor-based ferroelectric using neutron-scattering and -transport measurements. Phonon lifetimes increase along the applied poling field and this results in a tripling of the thermal conductivity in that direction. We also observe a suppression of nanoscale antiferroelectric fluctuations along the poling direction and argue that this increases the phonon lifetimes. Our results highlight a promising yet underexplored route to realistic solid-state heat switching from electric-field-modified nanostructures altering the phonon lifetimes in disordered functional materials.

Phonons↗

Charge lifetime improvement of the Continuous Electron Beam Accelerator Facility photogun with a biased anode

GaAs photocathodes in dc high-voltage photoguns are highly susceptible to ion back-bombardment, which reduces the photocathode quantum efficiency and limits the useful operating lifetime for producing polarized electron beams. This paper demonstrates that applying a small positive bias to the photogun anode can significantly suppress ion back-bombardment and increase charge lifetime. This technique was studied extensively using the Continuous Electron Beam Accelerator Facility photogun, where highly polarized electron beams created using a strained-superlattice GaAs / GaAsP photocathode were used and charge lifetimes improved by almost a factor of 2. A new simulation code was developed to model ion production and tracking in order to better understand and explain the factors that led to the performance improvement. Results of the experiments and simulations are discussed in detail. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS↗

Phase-controlled improvement of photon lifetime in coupled superconducting cavities

High-quality cavities are crucial for various fundamental physical studies and applications. Here we find that by coupling two cavities directly or via a phase-tunable coupling channel, the photon lifetime of the local field can exceed that of the bare cavities. The cavity photon lifetime is modified by the phases of the initial states and the phase accumulation on the coupling channel, which affect the interference between cavities. In experiments, by coupling superconducting radio-frequency cavities via phase-tunable cables, we realize a factor of 2 improvement in the cavity photon lifetime. The results can bring rich revenue to quantum information science, sensing, and high-energy physics.

43 PARTICLE ACCELERATORS↗

Lifetime measurements of excited states in neutron-rich 53 Ti: Benchmarking effective shell-model interactions

Level lifetimes of the yrast (5/2 - ) to 13/2 - states in the neutron-rich nucleus 53 Ti, produced in a multinucleon-transfer reaction, have been measured for the first time. The recoil distance Doppler-shift method was employed and lifetimes of the excited states were extracted by a lineshape analysis aided by GEANT4-based Monte-Carlo simulations. The experiment was performed at the Grand Accelerateur National d'Ions Lourds facility in Caen, France, by using the Advanced Gamma Tracking Array for the gamma-ray detection coupled to the large-acceptance variable mode spectrometer for an event-by-event particle identification and the Cologne plunger for deep-inelastic reactions. Reduced transition probabilities, deduced from the lifetimes, give new information on the nuclear structure of 53 Ti, and are used to benchmark different shell-model calculations using established interactions in the fp shell.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Lifetime measurements of 0 + states in Er 168 with the Doppler-shift attenuation method

Here, the lowest-lying shape oscillations of deformed nuclei have been described as quadrupole in nature (λ = 2), resulting in two types of vibrations or oscillations: β vibrations with oscillations along the symmetry axis (K π = 0 + ) and γ vibrations breaking axial symmetry with a projection of K π = 2 + on the symmetry axis. The γ vibration seems to be well characterized as the first K π = $2^+_1$ (or $2^+_γ$) band in deformed nuclei and exhibits a systematic behavior across the region. The nature of the K π = 0 + excitations, however, has remained poorly understood and has been open to debate for some decades. The goal of this work is to understand the nature of 0 + states observed in 168 Er through measurements of the lifetimes of these states and to determine if they are consistent with oscillations built on a deformed ground state, the minima of other coexisting shapes, single-particle states, or a mixture of effects. Lifetimes of excited states in the 168 Er nucleus were measured with the Doppler Shift Attenuation Method (DSAM) and the inelastic neutron scattering reaction, (n, n'γ), at the University of Kentucky Accelerator Laboratory. Numerous 0 + states had been observed by the (p, t) reaction. We confirm the 0 + states at 1217.2, 1421.5, 1833.6, 2364.9, 2392.1, and 2643.0 keV in 168 Er. We could not, however, support the previous assignments of 0 + levels at 2114.1, 2200.6, 2572.5, and 2617.4 keV. We report measured lifetimes for six confirmed 0 + excitations and additional members of 0 + bands. The results for 168 Er show that it is the third excited K π = 0 + ($0^+_4$) excitation that carries the collective strength and, therefore, the potential to be an oscillation on the ground state. This result is similar to the case in 166 Er, where it was also the $0^+_4$ state that exhibited greater collectivity than the first excited K π = 0 + band. The Delaroche et al. prediction for a collective K π = 0 + band is at E T =1.818 MeV which corresponds the third excited K π = 0 + band.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Measurement of the free neutron lifetime in a magneto-gravitational trap with in situ detection

Here, in this study, we publish three years of data from the UCNτ experiment performed at the Los Alamos Ultracold Neutron Facility at the Los Alamos Neutron Science Center. These data are in addition to our previously published data. Our goals in this paper are to better understand and quantify systematic uncertainties and to improve the lifetime statistical precision. We previously reported a value from our 2017–2018 data for the neutron lifetime of 877.75 ± 0.28 (statistical) +0.22–0.16 (systematic) s. We have collected an additional three years of data reported here for the first time. When all the data from UCNτ are averaged for 2017, 2018, 2020, 2021, and 2022, we report an updated value for the lifetime of 877.83 ± 0.22 (statistical)+0.20–0.17 (systematic) s. We utilized improved monitor detectors, reduced our correction due to UCN upscattering on residual gas, and employed four different UCN detector geometries both to reduce the correction required for rate dependence and to explore potential contributions due to phase space evolution.

Cabibbo-Kobayashi-Maskawa matrix↗

Constraints on light dark sector particles from lifetime difference of heavy neutral mesons

Heavy meson decays with missing energy in the final state offer interesting avenues to search for light invisible new physics such as dark matter (DM). In this context, we show that such new physics (NP) interactions also affect lifetime difference in neutral meson-antimeson mixing. We consider general dimension-six effective quark interactions involving a pair of DM particles and calculate their contributions to lifetime difference in beauty and charm meson systems. We use the latest data on mixing observables to constrain the relevant effective operators. We find that lifetime differences provide novel and complementary flavor constraints compared to those obtained from heavy meson decays. Published by the American Physical Society 2024

Astronomy & Astrophysics↗

Lifetime of Almost Strong Edge-Mode Operators in One-Dimensional, Interacting, Symmetry Protected Topological Phases

Almost strong edge-mode operators arising at the boundaries of certain interacting one-dimensional symmetry protected topological phases with Z 2 symmetry have infinite temperature lifetimes that are nonperturbatively long in the integrability breaking terms, making them promising as bits for quantum information processing. We extract the lifetime of these edge-mode operators for small system sizes as well as in the thermodynamic limit. For the latter, a Lanczos scheme is employed to map the operator dynamics to a one-dimensional tight-binding model of a single particle in Krylov space. We suggest this model to be that of a spatially inhomogeneous Su-Schrieffer-Heeger model with a hopping amplitude that increases away from the boundary, and a dimerization that decreases away from the boundary. We associate this dimerized or staggered structure with the existence of the almost strong mode. Thus, the short time dynamics of the almost strong mode is that of the edge mode of the Su-Schrieffer-Heeger model, while the long time dynamics involves decay due to tunneling out of that mode, followed by chaotic operator spreading. Furthermore, we show that competing scattering processes can lead to interference effects that can significantly enhance the lifetime.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reduction of bright exciton lifetimes by radiation-induced disorder

Quantum-radiative decay is a fundamental process in many optoelectronic systems such as laser diodes and solar cells. The bright exciton lifetime is a critical factor in determining the performance of these systems. Motivated by the ever-increasing need for laser systems in space and nuclear applications, we develop a many-particle approach to predict the radiative lifetime under harsh radiation environments. Here, using GaAs as a model system, we find that radiation-induced band tailing reduces the bright exciton lifetime. This result shows that the efficiency of radiative recombination, in addition to nonradiative recombination, can be affected by ionization radiation. Our approach enables a detailed understanding of the interplay between correlation, localization, and radiation that affect the performance of gain media.

36 MATERIALS SCIENCE↗

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗

Effect of Air Plasma Sprayed Flash Bond Coatings on Furnace Cycle Lifetime of Disks and Rods

Air plasma sprayed (APS) flash coatings on high velocity oxygen fuel (HVOF) bond coatings are well known to extend the lifetime of thermal barrier coatings (TBCs). Recent work compared flash coatings of NiCoCrAlY and NiCoCrAlYHfSi applied to both rods and disk substrates of alloy 247. For rod specimens, 100 h cycles were used at 1100 °C in wet air. Both flash coatings significantly improved the lifetime compared to HVOF-only and vacuum plasma spray (VPS)-only MCrAlY bond coatings with no statistical difference between the two flash coatings. For disk specimens tested in 1 h cycles at 1100 °C in wet air, the NiCoCrAlY flash coating significantly outperformed an HVOF-only NiCoCrAlYHfSi bond coating and a NiCoCrAlYHfSi flash coating. The flash coatings formed a mixed oxide-metal zone that appeared to inhibit crack formation and therefore extend lifetime. In addition to the flash coating increasing the bond coating roughness, the underlying HVOF layer acted as a source of Al for this intermixed zone and prevented the oxide from penetrating deeper into the bond coating. Here, the lower Y+Hf content in the Y-only flash coating appeared to minimize oxidation in the flash layer, thereby increasing the benefit compared to a NiCoCrAlYHfSi flash coating.

42 ENGINEERING↗

Lifetime measurement of excited states in 116 Xe

Lifetimes of excited states in 116 Xe were measured using the recoil-distance Doppler-shift technique. Excited 116 Xe nuclei were populated in the fusion-evaporation reaction 102 Pd( 16 O,2n) 116 Xe. Lifetimes of the $2^{+}_{1}$ and $4^{+}_{1}$ states were evaluated using the differential decay-curve method with $\gamma$-$\gamma$-coincidence data as well as lifetimes of the $6^{+}_{1}$ and $7^{-}_{1}$ states using simulations of spectra considering Doppler-shift attenuation effects.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Lifetimes of negative parity states in 162 Dy

Lifetimes of excited states in 162 Dy were measured using the (n,n’$γ$) reaction with the Doppler-Shift Attenuation Method (DSAM) at the University of Kentucky’s Accelerator Laboratory. A total of eighteen level lifetimes were obtained, including eleven negative-parity states, seven of which are new. These measurements significantly expand the experimental database of transition probabilities for negative-parity bands in the well-deformed rare earth region of nuclei. The extracted B(E1) and B(E2) values reveal enhanced interband E1 (10 -3 or 10 -4 ) W.u. and E2 strengths (several W.u.) between negative- and positive parity bands, particularly for the K π = $2^{-}_{1,2}$ bands decaying to the K π = $2^+_γ$ band, consistent with signatures of octupole-quadrupole coupling. In contrast, the K π = $0^{-}_1$ and K π = $1^{-}_3$ bands, which exhibit strong E1 transitions to the ground state band, are indicative of octupole-vibrational excitations built on the deformed ground state. Comparison of transition rates with Alaga rules supports this interpretation and distinguishes collective excitations from likely quasi-particle states. These new results establish 162 Dy as the most extensively characterized rare-earth nucleus for negative parity lifetimes and provide critical experimental benchmarks for theoretical models.

Aprahamian, A. [University of Notre Dame, IN (Unit↗