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Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Evidence of Magnetic Inversion in Single Ni Nanoparticles

Superparamagnetism is an unwanted property of small magnetic particles where the magnetization of the particle flips randomly in time, due to thermal noise. There has been an increased attention in the properties of superparamagnetic particles recently, because of their potential applications in high density storage and medicine. In electron transport through single nanometer scale magnetic particles, the current can also cause the magnetization to flip randomly in time, even at low temperature. Here we show experimental evidence that when the current is then reduced towards zero in the applied magnetic field, the magnetization can reliably freeze about a higher anisotropy-energy minimum, where it tends to be inverted with respect to the magnetic field direction. Specifically, we use spin-unpolarized tunneling spectroscopy of discrete levels in single Ni particles 2–4 nm in diameter at mK-temperature, and find that the the magnetic excitation energy at the onset of current decreases when the magnetic field increases, reaching near degeneracy at nonzero magnetic field. We discuss the potential for spintronic applications such as current induced magnetization switching without any spin-polarized leads.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhancement of perpendicular magnetic anisotropy and transmission of spin-Hall-effect-induced spin currents by a Hf spacer layer in W/Hf/CoFeB/MgO layer structures

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes

Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H{sup +} (range: ∼850 nm; dose: 1.5 × 10{sup 16 }cm{sup −2}) and Ni{sup +} (range: ∼60 nm; dose: 2 × 10{sup 15 }cm{sup −2}). Following annealing, the H implanted regions populated with Ni nanoparticles of size (∼10–25 nm) and density (∼10{sup 11}/cm{sup 2}) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 °C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a high-quality crystalline Si layer exhibit a very high magnetic switching energy barrier of ∼0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A feasible path for the use of ferromagnetic josephson junctions in quantum circuits: The ferro-transmon

We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlO x /Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. In conclusion, the effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Topological transformations of Hopf solitons in chiral ferromagnets and liquid crystals

Significance While arising in theories in many branches of science, from particle physics to condensed matter and cosmology, stable three-dimensional topological solitons remained experimentally elusive until very recently. We now show that such solitons can be electrically and magnetically switched between states with the same or different Hopf indices. Richness and robustness of this switching promise technological applications in the new breeds of information displays and data storage devices, as well as may provide a test ground and new inspirations for the mathematical knot theory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Critical structural parameter determining magnetic phases in the F⁡e 2 ⁢M⁢o 3 ⁢O 8 altermagnet system

A systematic structural investigation of F⁡e 2 ⁢M⁢o 3⁢ O 8 as a function of pressure, temperature, and magnetic field reveals that the 𝑃⁢6 3 ⁢𝑚⁢𝑐 space group remains robust over a wide range of conditions. No changes in the long-range crystal structure are observed for pressures up to 10 GPa, temperatures between 11 K and 300 K, and magnetic fields up to 9 T. The magnetostructural response, quantified by Δ⁢𝑐/𝑐, is determined for magnetic fields applied transverse to the crystallographic 𝑐 axis, demonstrating strong magnetoelastic coupling. The well-known magnetic-field-induced transition is confirmed to be first order and isostructural, occurring between two distinct altermagnetic states. Importantly, this transition can also be accessed using magnetic fields applied within the 𝑎𝑏 plane. When expressed in terms of the 𝑐/𝑎 ratio, the structural evolution under pressure (0–10 GPa) maps continuously onto that observed across the full Zn substitution range in (F⁡e 1−𝑦⁢ Z⁢n 𝑦 )2 M⁢o 3 ⁢O 8 ⁢(0 ≤ 𝑦 ≤ 1), indicating a common underlying structural control parameter. Furthermore, these results demonstrate that the 𝑐-axis lattice parameter is the primary structural degree of freedom governing magnetic behavior under external tuning parameters. More broadly, they indicate that magnetic order in this family of complex oxides (𝐴 2 ⁢M⁢o 3 ⁢O 8 , 𝐴 = Co,Mn,Ni) can be systematically tuned via pressure. This tunability highlights these materials as promising platforms for controllable magnetic switching, particularly in thin films integrated with piezoelectric substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2015

New opportunities at the frontiers of spintronics

The field of spintronics, or magnetic electronics, is maturing and giving rise to new subfields. These new directions involve the study of collective spin excitations and couplings of the spin system to additional degrees of freedom of a material, as well as metastable phenomena due to perturbations that drive the system far from equilibrium. The interactions lead to possibilities for future applications within the realm of energy-efficient information technologies. Examples discussed herein include research opportunities associated with (i) various spin-orbit couplings, such as spin Hall effects, (ii) couplings to the thermal bath of a system, such as in spin Seebeck effects, (iii) spin-spin couplings, such as via induced and interacting magnon excitations, and (iv) spin-photon couplings, such as in ultra-fast magnetization switching due to coherent photon pulses. These four basic frontier areas of research are giving rise to new applied disciplines known as spin-orbitronics, spin-caloritronics, magnonics, and spin-photonics, respectively. These topics are highlighted in order to stimulate interest in the new directions that spintronics research is taking, and to identify open issues to pursue.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Nanoscale imaging of magnetization reversal driven by spin-orbit torque

We use scanning electron microscopy with polarization analysis to image deterministic, spin-orbit torque-driven magnetization reversal of in-plane magnetized CoFeB rectangles in zero applied magnetic field. The spin-orbit torque is generated by running a current through heavy metal microstrips, either Pt or Ta, upon which the CoFeB rectangles are deposited. We image the CoFeB magnetization before and after a current pulse to see the effect of spin-orbit torque on the magnetic nanostructure. The observed changes in magnetic structure can be complex, deviating significantly from a simple macrospin approximation, especially in larger elements. Overall, however, the directions of the magnetization reversal in the Pt and Ta devices are opposite, consistent with the opposite signs of the spin Hall angles of these materials. Lastly, our results elucidate the effects of current density, geometry, and magnetic domain structure on magnetization switching driven by spin-orbit torque.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Ultrafast magnetization reversal by picosecond electrical pulses

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. Here, we unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub–10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electrical switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm) 3 cell. This discovery introduces a new field of research into ultrafast charge current–driven spintronic phenomena and devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Half-Metal Spin Filter for Highly Polarized Emission from GaAs Photocathodes

GaAs-based photocathodes are one of the major sources of spin-polarized electrons and are crucial for the upcoming Electron-Ion collider experiments which includes study of proton spin and spin parity violation in the standard model. The theoretical polarization limit in unstrained GaAs photocathodes is 50 % but only 35 % is routinely achieved in experiments. Spin selective filtering allows to boost the spin polarization beyond the 50 % theoretical limit. In this work, first-principle electronic calculations using standard Density Functional Theory are performed to predict possible Heusler alloy half-metal candidates to be used as spin-filter. Simulations are also performed to investigate the half-metallicity as function of the magnetic spin direction. Several devices are experimentally fabricated using dedicated Molecular Beam Epitaxy growth system. We implemented Quantum Efficiency and Polarization testing of these half-metal/GaAs heterostructures using a dedicated Mott polarimeter system. Photoemission can also be seen on magnetically switching the spin-filter direction accompanied by a change in sign of the asymmetry which is a qualitative proof of the spin-filtering effect.

Poddar, S.↗
DOE OSTI2024

Frequency-independent optical spin injection in Weyl semimetals

We demonstrate that in Weyl semimetals, the momentum-space helical spin texture can couple to the chirality of the Weyl node to generate a frequency-independent optical spin injection. This frequency-independence is rooted in the topology of the Weyl node. Since the helicity and the chirality are always locked for Weyl nodes, the injected spin from a pair of Weyl nodes always add up, implying no symmetry requirements for Weyl semimetals. Finally, we show that such frequency-independent spin injection is robust against multiband corrections and lattice-regularization effect and capable of realizing all-optical magnetization switching in the THz regime.

Gao, Yang↗
DOE OSTI2013

Spin-Torque in Systems with Inhomogeneous Magnetization

The work performed during the grant period focused on the phenomenon of spin-transfer torque. This is a quantum mechanical effect whereby the angular momentum of conduction electrons is transferred to the magnetization of ferromagnetic structures. Our work on this subject began with phenomenological drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate unambiguously that unpolarized current flow from a nonmagnet into a ferromagnet can produce a precession-type instability of the magnetization. We then used Boltzmann calculations appropriate to spin-valve type magnetic heterostructures composed of a non-magnetic thin film sandwiched between two thin film layers with uniform magnetization. Perhaps our most important paper dealt with quantum and semi-classical calculations of spin-transfer torque in systems with domain walls and other inhomogeneous distributions of magnetization. The latter work caused us to suggest that the Landau-Lifshitz approach to magnetic damping provided a clearer picture of the physics than the more popular (but formally equivalent) Gilbert approach to damping. Finally, we returned to our Boltzmann calculations and made a serious effort to analyze experimental data on current-induced magnetization in switching in magnetic spin-valve structures. Our work was part of a world-wide effort to study and harness the transport of the electron's spin and was one of the first sustained theoretical efforts in this direction in the United States. The payoff is just now being seen. In November of 2012, the Everspin Corporation announced the release of the first commercial spin-torque magnetoresistive random access memory.

36 MATERIALS SCIENCE↗
DOE OSTI2023

IMS Rapid Response 2023-2 (RR 2023-RND-2): Magnetic order in layered bismuthide RhMnBi 3 (Final Report)

Microelectronics are technologies (mostly theoretical at this point) to create electronic circuits with components of atomic length scale. One of the key materials innovations enabling this technology is exfoliatable two-dimensional materials. These materials allow thin sheets of only a few atoms thick to be easily created in the laboratory. More and more of these materials are reported every year, but few have been characterized in detail. Thus a major goal in materials research in pursuit of microelectronic devices is characterizing newly discovered materials to evaluate their properties. The goal of this project was the measure and understand the magnetic order in a newly discovered van der Waals magnet RhMnBi 3 . Bulk property experiments indicated very complicated magnetic behavior, with multiple phase transitions between 2K and 300K (room temperature). This potentially indicated highly sensitive and tunable magnetism appropriate for single-layer magnetic switches and sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Topological Surface and Bulk States in Dirac Semimetal Alpha-Sn Thin Films

Supported by this DOE grant, we made significant advancements in the study and application of topological surface states (TSS) in topological Dirac semimetal (TDS) α-Sn thin films. Our key findings include: (1) the successful growth of TDS α-Sn thin films via sputtering, an industry-friendly technique, on Si and InSb substrates, marking a breakthrough over previous molecular beam epitaxy methods, (2) the demonstration of enhanced damping in adjacent NiFe thin films due to the TSS of α-Sn, (3) the first observation of a strong bilinear magneto-electric resistance (BMER) effect in TDS materials at room temperature, with responses surpassing previous results, (4) the identification of quantum oscillations in α-Sn thin films associated with the TSS, revealing critical quantum transport characteristics such as Berry phase and quantum mobility, (5) the first experimental observation of negative magnetoresistance in α-Sn, and (6) the demonstration of spinorbit torque-driven, field-free magnetization switching in an α-Sn/Ag/CoFeB trilayer, achieving efficiency levels higher than conventional heavy-metal-based structures, highlighting the essential role of TSS in enabling the switching process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Wireless sensor for detecting explosive material

Disclosed is a sensor for detecting explosive devices. The sensor includes a ferromagnetic metal and a molecular recognition reagent coupled to the ferromagnetic metal. The molecular recognition reagent is operable to expand upon absorption of vapor from an explosive material such that the molecular recognition reagent changes a tensile stress upon the ferromagnetic metal. The explosive device is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the tensile stress.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
DOE OSTI2016

Wireless sensor

Disclosed is a sensor for detecting a target material. The sensor includes a ferromagnetic metal and a molecular recognition reagent coupled to the ferromagnetic metal. The molecular recognition reagent is operable to expand upon exposure to vapor or liquid from the target material such that the molecular recognition reagent changes a tensile stress upon the ferromagnetic metal. The target material is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the changes in the tensile stress.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Wireless radiation sensor

Disclosed is a sensor for detecting radiation. The sensor includes a ferromagnetic metal and a radiation sensitive material coupled to the ferromagnetic metal. The radiation sensitive material is operable to change a tensile stress of the ferromagnetic metal upon exposure to radiation. The radiation is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the changes in the tensile stress.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Integrated transmission electron microscope

An integrated transmission electron microscope comprising multiple electron sources for tuned beams of ultrafast, scanning probe, and parallel illumination in varied beam energies can be alternated within sub-microseconds onto a sample with dynamic ‘transient state’ processes to acquire atomic-scale structural/chemical data with site specificity. The various electron sources and condenser optics enable high-resolution imaging, high-temporal resolution imaging, and chemical imaging, using fast-switching magnets to direct the different electron beams onto a single maneuverable objective pole piece where the sample resides. Such multimodal in situ characterization tools housed in a single microscope have the potential to revolutionize materials science.

Jungjohann, Katherine L.↗