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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

The theoretical ultimate magnetoelectric coefficients of magnetoelectric composites by optimization design

This paper investigates what is the largest magnetoelectric (ME) coefficient of ME composites, and how to realize it. From the standpoint of energy conservation, a theoretical analysis is carried out on an imaginary lever structure consisting of a magnetostrictive phase, a piezoelectric phase, and a rigid lever. This structure is a generalization of various composite layouts for optimization on ME effect. The predicted theoretical ultimate ME coefficient plays a similar role as the efficiency of ideal heat engine in thermodynamics, and is used to evaluate the existing typical ME layouts, such as the parallel sandwiched layout and the serial layout. These two typical layouts exhibit ME coefficient much lower than the theoretical largest values, because in the general analysis the stress amplification ratio and the volume ratio can be optimized independently and freely, but in typical layouts they are dependent or fixed. To overcome this shortcoming and achieve the theoretical largest ME coefficient, a new design is presented. In addition, it is found that the most commonly used electric field ME coefficient can be designed to be infinitely large. We doubt the validity of this coefficient as a reasonable ME effect index and consider three more ME coefficients, namely the electric charge ME coefficient, the voltage ME coefficient, and the static electric energy ME coefficient. We note that the theoretical ultimate value of the static electric energy ME coefficient is finite and might be a more proper measure of ME effect.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Pressure induced magneto-structural phase transitions in layered RMn{sub 2}X{sub 2} compounds (invited)

We have studied a range of pseudo-ternaries derived from the parent compound PrMn{sub 2}Ge{sub 2}, substituting for each constituent element with a smaller one to contract the lattice. This enables us to observe the magneto-elastic transitions that occur as the Mn-Mn nearest neighbour distance is reduced and to assess the role of Pr on the magnetism. Here, we report on the PrMn{sub 2}Ge{sub 2−x}Si{sub x}, Pr{sub 1−x}Y{sub x}Mn{sub 2}Ge{sub 2}, and PrMn{sub 2−x}Fe{sub x}Ge{sub 2} systems. The pressure produced by chemical substitution in these pseudo-ternaries is inherently non-uniform, with local pressure variations dependent on the local atomic distribution. We find that concentrated chemical substitution on the R or X site (e.g., in Pr{sub 0.5}Y{sub 0.5}Mn{sub 2}Ge{sub 2} and PrMn{sub 2}Ge{sub 0.8}Si{sub 1.2}) can produce a separation into two distinct magnetic phases, canted ferromagnetic and canted antiferromagnetic, with a commensurate phase gap in the crystalline lattice. This phase gap is a consequence of the combination of phase separation and spontaneous magnetostriction, which is positive on transition to the canted ferromagnetic phase and negative on transition to the canted antiferromagnetic phase. Our results show that co-existence of canted ferromagnetic and antiferromagnetic phases depends on chemical pressure from the rare earth and metalloid sites, on local lattice strain distributions and on applied magnetic field. We demonstrate that the effects of chemical pressure bear close resemblance to those of mechanical pressure on the parent compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Direct and inverse magnetoelectric effects in HoAl{sub 3}(BO{sub 3}){sub 4} single crystal

The direct (ME{sub H}-) and inverse (ME{sub E}-) magnetoelectric effects in the HoAl{sub 3}(BO{sub 3}){sub 4} single crystal are studied. Temperature and magnetic field dependences of permittivity of the crystal are investigated. A relation between the investigated effects was established. It was found that the magnetoelectric effect can exist in crystals without magnetic order or spontaneous polarization. It was shown that the phenomena investigated are due to magnetostriction or magnetoelastic effect. The thermodynamic potential was considered for describing magnetoelectric effect at low magnetic fields. The results obtained are explained within a proposed qualitative microscopic model, based on interplay of configuration of 4f- electron subshell of the rare-earth element and applied magnetic or electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Voltage controlled modification of the magnetocrystalline anisotropy in a hybrid piezoelectric/ferromagnet device has been studied using Photoemission Electron Microscopy with X-ray magnetic circular dichroism as the contrast mechanism. The experimental results demonstrate that the large magnetostriction of the epitaxial Fe{sub 81}Ga{sub 19} layer enables significant modification of the domain pattern in laterally confined disc structures. In addition, micromagnetic simulations demonstrate that the strain induced modification of the magnetic anisotropy allows for voltage tuneability of the natural resonance of both the confined spin wave modes and the vortex motion. These results demonstrate the possibility for using voltage induced strain in low-power voltage tuneable magnetic microwave oscillators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Thickness dependence of magnetoelectric response for composites of Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} films on CoFe{sub 2}O{sub 4} ceramic substrates

Using chemical solution spin-coating we grew Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} films of different thicknesses on highly dense CoFe{sub 2}O{sub 4} ceramics. X-ray diffraction revealed no other phases except Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} and CoFe{sub 2}O{sub 4}. In many of these samples we observed typical ferroelectric hysteresis loops, butterfly-shaped piezoelectric strains, and the magnetic-field-dependent magnetostriction. These behaviors caused appreciable magnetoelectric responses based on magnetic-mechanical-electric coupling. Our results indicated that the thickness of the Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} film was important in obtaining strong magnetoelectric coupling.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Determination of effective mechanical properties of a double-layer beam by means of a nano-electromechanical transducer

We investigate the mechanical properties of a doubly clamped, double-layer nanobeam embedded into an electromechanical system. The nanobeam consists of a highly pre-stressed silicon nitride and a superconducting niobium layer. By measuring the mechanical displacement spectral density both in the linear and the nonlinear Duffing regime, we determine the pre-stress and the effective Young's modulus of the nanobeam. An analytical double-layer model quantitatively corroborates the measured values. This suggests that this model can be used to design mechanical multilayer systems for electro- and optomechanical devices, including materials controllable by external parameters such as piezoelectric, magnetostrictive, or in more general multiferroic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effects of Zn additions to highly magnetoelastic FeGa alloys

Fe{sub 1−x}M{sub x} (M = Ga, Ge, Si, Al, Mo and x ∼ 0.18) alloys offer an extraordinary combination of magnetoelasticity and mechanical properties. They are rare-earth-free, can be processed using conventional deformation techniques, have high magnetic permeability, low hysteresis, and low magnetic saturation fields, making them attractive for device applications such as actuators and energy harvesters. Starting with Fe-Ga as a reference and using a rigid-band-filling argument, Zhang et al. predicted that lowering the Fermi level by reducing the total number of electrons could enhance magnetoelasticity. To provide a direct experimental validation for Zhang's hypothesis, elemental additions with lower-than-Ga valence are needed. Of the possible candidates, only Be and Zn have sufficient solubility. Single crystals of bcc Fe-Ga-Zn have been grown with up to 4.6 at. % Zn in a Bridgman furnace under elevated pressure (15 bars) in order to overcome the high vapor pressure of Zn and obtain homogeneous crystals. Single-crystal measurements of magnetostriction and elastic constants allow for the direct comparison of the magnetoelastic coupling constants of Fe-Ga-Zn with those of other magnetoelastic alloys in its class. The partial substitution of Ga with Zn yields values for the magnetoelastic coupling factor, −b{sub 1}, comparable to those of the binary Fe-Ga alloy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Influence of Ga-concentration on the electrical and magnetic properties of magnetoelectric CoGa x Fe 2–x O 4 /BaTiO 3 composite

Multiferroic materials exhibit magnetoelectric (ME) coupling and promise new device applications including magnetic sensors, generators, and filters. An effective method for developing ME materials with enhanced ME effect is achieved by the coupling through the interfacial strain between piezoelectric and magnetostrictive materials. In this study, the electrical and magnetic properties of Ga doped magnetoelectric CoGa x Fe 2–x O 4 /BaTiO 3 composite are studied systematically. It is found that Ga doping improves the sensitivity of magnetoelastic response and stabilizes the magnetic phase of the composites. More importantly, Ga doping reduces the electrical conductivity of composite, as well as the dielectric loss. An enhancement of the electrostrain with doping Ga is also observed. Quantitative estimation indicates that magnetoelectric coupling is enhanced for Ga-doped CoGa x Fe 2–x O 4 /BaTiO 3 composites. As a result, the present work is beneficial to the practical application of composite CoFe 2 O 4 /BaTiO 3 -based multiferroic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Ferromagnetism in Laves-phase WFe{sub 2} nanoparticles

While rare-earth based Laves phases are known to exhibit large magnetostriction, the magnetic properties of some binary Laves phases containing transition metals alone are not well known. This is because many of these compounds contain refractory elements that complicate melt processing due to high melting temperatures and extensive phase separation. Here, phase-pure WFe{sub 2} nanoclusters, with the hexagonal C14 Laves structure, were deposited via inert gas condensation, allowing for the first known measurement of ferromagnetism in this phase, with M{sub S} of 26.4 emu/g (346 emu/cm{sup 3}) and a K{sub U} of 286 kerg/cm{sup 3}, at 10 K, and a T{sub C} of 550 K.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy

We report the growth of high indium content InGaN:Yb nanorods grown on c-plane sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The in situ reflection high energy electron diffraction patterns recorded during and after the growth revealed crystalline nature of the nanorods. The nanorods were examined using electron microscopy and atomic force microscopy. The photoluminescence studies of the nanorods showed the visible emissions. The In composition was calculated from x-ray diffraction, x-ray photoelectron spectroscopy, and the photoluminescence spectroscopy. The In-concentration was obtained from photoluminescence using modified Vegard's law and found to be around 37% for InGaN and 38% for Yb (5 ± 1%)-doped InGaN with a bowing parameter b = 1.01 eV. The Yb-doped InGaN showed significant enhancement in photoluminescence properties compared to the undoped InGaN. The Yb-doped InGaN nanorods demonstrated the shifting of the photoluminescence band at room temperature, reducing luminescence amplitude temperature dependent fluctuation, and significant narrowing of excitonic emission band as compared to the undoped InGaN. The magnetic properties measured by superconducting quantum interference devices reveals room temperature ferromagnetism, which can be explained by the double exchange mechanism and magnetostriction.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Magnetoresistance of galfenol-based magnetic tunnel junction

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Evolution of spin phonon coupling by substituting Cd for Zn in the frustrated spinel ZnCr{sub 2}Se{sub 4}

Frustration makes a tremendous amount of degenerate ground states which provides no energy scale of its own. Any perturbation has to be considered strong and fascinating phenomena may be emergent upon relieving of frustration. Here, we report the evolution of spin phonon coupling in the frustrated spinel system Zn{sub 1−x}Cd{sub x}Cr{sub 2}Se{sub 4} (0 ≤ x ≤ 1) from magnetization, specific heat and thermal conductivity. Our results give clear evidences that the spin-orientated structural transitions decay rapidly as x going from 0 to 0.4 while the correlations between spin and lattice degrees of freedom for 0.6 ≤ x ≤ 1 become weak and can be explained in terms of the traditional magnetostriction effect. In addition, for 0 ≤ x ≤ 0.4 thermal carriers reveal strong scattering from spin fluctuations in the vicinity of T{sub N} owing to strong frustration, in stark contrast with those for 0.6 ≤ x ≤ 1 where traditional phonon-like heat conduction behaviors are observed. Moreover, it is shown that a moderate applied magnetic field can drive readily the fluctuations-scattered thermal conductivity toward traditional phonon-like one as observed in CdCr{sub 2}Se{sub 4}, reaching about 30% for x = 0.4 at 25 K in 1 T. Such strong field-sensitive effects may introduce new promising functionalities for potential applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Magnetic and magneto elastic properties of cobalt ferrite ceramic compacted through cold isostatic pressing

Nano crystalline CoFe{sub 2}O{sub 4} powder was prepared by combustion synthesis method. As synthesized powder was calcined at an appropriate condition to remove the impurities and to promote phase formation. Phase pure CoFe{sub 2}O{sub 4} powder was pressed into cylindrical rod at an applied pressure of 200 MPa using a cold isostatic pressing. Sintering of the green compact at 1350°c for 12 hrs resulted in sintered cylindrical rod with ~85% of the theoretical density. Single phase cubic spinel structure was observed in the powder x-ray diffraction pattern of the sintered pellet. Scanning electron micrographs (SEM) of the as sintered pellet revealed the microstructure to be composed of ferrite grains of average size ~4 µm. Saturation magnetization of 72 emu/g and coercivity of 355 Oe were observed for cobalt ferrite sample. The magnetostriction was measured on a circular disc (12 mm diameter and 12 mm length) with the strain gauge (350 Ω) mounted on the flat surface of the circular disc. Magnetostriciton of 180 ppm and strain derivative of 1 × 10{sup −9} m/A were observed for the sintered CoFe{sub 2}O{sub 4} sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Investigation of magneto-electric properties of BCZT-NFO particulate composite

:Synthesis and characterizations for ferroelectric, ferromagnetic properties of 50BCZT - 50NFO particulate composite have been investigated. Phase pure BCZT (tetragonal) and NFO (cubic inverse spinel) have been observed in powder XRD pattern of 50BCZT-50NFO composite. Average grain size of 12µm for BCZT and 4µm for NFO have been observed in the back scattered electron diffraction (BSE) image of the sintered sample. Hysteresis loop measurement reveals typical ferroelectric nature of the sample with remnant and saturation polarizations of 8.34µC/cm{sup 2} and 17.4µC/cm{sup 2}, respectively. Furthermore, sintered BCZT-NFO sample also showed good ferromagnetic M-H hysteresis loop with saturation magnetization upto ~14.6emu/g. Magnetostriction measurements showed a value of ~ - 20ppm for pure NFO and ~ - 8ppm for the composite.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Multimode delta-E effect magnetic field sensors with adapted electrodes

We present an analytical and experimental study on low-noise piezoelectric thin film resonators that utilize the delta-E effect of a magnetostrictive layer to measure magnetic fields at low frequencies. Calculations from a physical model of the electromechanical resonator enable electrode designs to efficiently operate in the first and second transversal bending modes. As predicted by our calculations, the adapted electrode design improves the sensitivity by a factor of 6 and reduces the dynamic range of the sensor output by 16 dB, which significantly eases the requirements on readout electronics. Magnetic measurements show a bandwidth of 100 Hz at a noise level of about 100 pTHz{sup −0.5}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Magnetoelectric control of spin currents

The ability to control the spin current injection has been explored on a hybrid magnetoelectric system consisting of a (011)-cut ferroelectric lead magnesium niobate-lead titanate (PMNT) single crystal, a ferromagnetic FePt alloy, and a metallic Pt. With this PMNT/FePt/Pt structure we have been able to control the magnetic field position or the microwave excitation frequency at which the spin pumping phenomenon between FePt and Pt occurs. We demonstrate that the magnetoelectric heterostructure operating in the L-T (longitudinal magnetized-transverse polarized) mode couples the PMNT crystal to the magnetostrictive FePt/Pt bilayer, displaying a strong magnetoelectric coefficient of ∼140 Oe cm kV{sup −1}. Our results show that this mechanism can be effectively exploited as a tunable spin current intensity emitter and open the possibility to create an oscillating or a bistable switch to effectively manipulate spin currents.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Inverse bilayer magnetoelectric thin film sensor

Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN as a piezoelectric layer revealed a limit of detection (LOD) in the range of a few pT/Hz{sup 1/2} in the mechanical resonance. These sensors are comprised of a Si/SiO{sub 2}/Pt/AlN/FeCoSiB layer stack, as dictated by the temperatures required for the deposition of the layers. A low temperature deposition route of very high quality AlN allows the reversal of the deposition sequence, thus allowing the amorphous FeCoSiB to be deposited on the very smooth Si substrate. As a consequence, the LOD could be enhanced by almost an order of magnitude reaching 400 fT/Hz{sup 1/2} at the mechanical resonance of the sensor. Giant ME coefficients (α{sub ME}) as high as 5 kV/cm Oe were measured. Transmission electron microscopy investigations revealed highly c-axis oriented growth of the AlN starting from the Pt-AlN interface with local epitaxy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the efficiency of the straintronics switching over the STT method is highlighted by analytically investigating the energy-delay trade-off of both methodologies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗