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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Effect of Material of Metal Sublayer and Deposition Configuration on the Texture Formation in the Piezoactive ZnO Films

Effect of material of metal sublayer (aluminum, vanadium, chromium, iron, cobalt, nickel, and copper) and deposition configuration on the formation of the oblique and straight texture in the ZnO films is studied. The films that are synthesized in a dc magnetron sputtering system. It is shown that the piezoactive ZnO films with oblique texture that can generate shear waves are formed on the Cr and V metal sublayers in the shifted deposition configuration when the substrate is shifted relative to the magnetron axis toward the region of the target erosion. The piezoactive ZnO films with the straight structure that can generate longitudinal waves are formed on a chemically pure Al sublayer in the symmetric deposition configuration when the substrate is centered with respect to the target. Changes of the sublayer material in both deposition configurations or preliminary oxidation of the sublayer lead to the formation of the piezoactive ZnO films with mixed texture that excite shear and longitudinal waves. Chemical etching is used to show that the ZnO films with the oblique and straight textures exhibit piezoactive properties and can generate hypersound at thicknesses of no less than about 0.3 and about 0.9 μm, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Grain Growth in Nanocrystalline Mg-Al Thin Films

An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

activation energy↗
DOE OSTI2024

Exploring the relationship between deposition method, microstructure, and performance of Nb/Si-based superconducting coplanar waveguide resonators

Superconducting quantum circuits (SQC) are one of the most promising hardware platforms for quantum computing, yet their performance is currently limited by the presence of various structural defects inside the circuit's structure. Despite impressive progress in the past decade, a precise understanding of the origin of these defects from various fabrication processes and their impact on coherence is still lacking. Here, in this study, we performed a comprehensive investigation on the microstructure, superconductivity, and resonator quality factor of Nb films deposited by high-power impulse magnetron sputtering (HiPIMS) and direct current (DC) magnetron sputtering. A suite of characterization techniques, including electron microscopy with spectroscopy, secondary ion mass spectrometry, magneto-optical microscopy, and pump-probe reflectivity spectroscopy is used. We reveal that niobium (Nb) resonators fabricated using HiPIMS exhibit a smaller average grain size, thicker surface oxide with larger thickness variations (rougher surface), and a thicker amorphous Nb/Si interface layer compared to samples deposited by DC sputtering. We identified that the amorphous Nb oxides (mainly located at the Nb surface and along the grain boundaries) and Nb-Si amorphous layers (at the Nb/Si interface) are major and potential sources of two-level system (TLS), while off-stochiometric oxides and suboxides of Nb close to the surface, crystalline defects (i.e., dislocations at grain boundary, point defects introduced during deposition) are main contributors of non-TLS sources. Our findings clarify the relationship between different defects and coherence loss mechanisms, highlighting the importance of material microstructure control on performance optimization in SQC.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates

Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similar to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effects of elevated temperature exposure on the residual stress state and microstructure of PVD Cr coatings on SiC investigated via in situ X-ray diffraction and transmission electron microscopy

Pure Cr coatings are being considered as corrosion-resistant layers for SiC-SiC f composite fuel cladding in light water reactors. The residual stress state and interdiffusion behavior of Cr coatings deposited on SiC substrates using bipolar high-power impulse magnetron sputtering (B-HiPIMS) and direct current impulse magnetron sputtering (DCMS) were studied using in situ X-ray diffraction experiments at 300 °C, 700 °C, and 1200 °C. After elevated temperature exposure, evolution of the coating microstructure and coating/substrate interdiffusion was characterized by transmission electron microscopy. The compressive residual stress of the dense B-HiPIMS coating at room temperature was gradually relieved at 300 °C, while the stress transitioned to a tensile state at 700 °C. Grain growth of the Cr coating and a Cr–SiC interdiffusion layer consisting of newly formed Cr–C and Cr–Si phases were observed in the B-HiPIMS coating after exposure at 700 °C. The phases in the interdiffusion layer were identified to be Cr 7 C 3 , Cr 3 Si, and Cr 5 Si 3 C x experimentally and by thermodynamic predictions. For the DCMS coating, however, changes in residual stress and microstructure at the elevated temperatures were limited by the inherent porosity and inhomogeneous structure of the as-deposited coating. At 1200 °C, both coating types interacted rapidly with the underlying SiC substrate in the early stages of the experiment. The results from this study suggest that the characteristics of the Cr coatings do not significantly change at the reactor operating temperature of 300 °C, while changes in microstructure and stress state are expected in off-normal conditions of 700 °C and 1200 °C. Finally the results from this study suggest the B-HiPIMS coating is best-suited as a protective coating for SiC fuel cladding.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Superconducting magnesium diboride films for levitation of laser targets

Inertial confinement fusion targets would benefit from being levitated inside hohlraums to avoid capsule support-related implosion perturbations. Levitation inside a magnetic trap requires coating the capsule with a thin film that is superconducting at 20 K. Such non-epitaxial film growth on non-planar substrates is challenging. Here, we study Mg vapor annealing and solid-phase reactive inter-diffusion methods to form superconducting magnesium diboride (MgB 2 ) films on different planar and spherical carbon substrates, evaluating glassy carbon, polycrystalline diamond made by chemical vapor deposition, and carbon deposited by magnetron sputtering of graphite targets. Thin films of B and Mg are produced by magnetron sputtering onto stationary planar or rolling spherical substrates and annealed at either 600 or 850 °C in Mg vapor. The films are characterized by a combination of high-energy ion scattering, electron microscopy, and magnetometry. Results show that the critical superconducting temperature of resultant films depends on film microstructure and oxygen impurity content. The formation of MgB 2 films is also strongly substrate dependent, even in this case of non-epitaxial growth. Important factors to consider are oxygen outgassing of the substrate during thermal processing, substrate surface roughness, and the matching of thermal expansion coefficients of different layers in the multilayer structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Investigating the Chemical Reactivity of Lithium Silicate Model SEI Layers

Silicon anodes suffer from an unstable solid electrolyte interphase (SEI) layer that contributes to undesirable capacity fade with cycling. A key part to addressing this unstable SEI formation is to examine how certain components of the SEI react with the electrolyte over time. One SEI component that has not been thoroughly studied in the context of the chemical reactivity against the electrolyte is lithiated silicate. Four model silicate thin films with increasing lithium content were deposited by radio frequency (RF) magnetron sputtering to study how the lithiation of the native oxide on a silicon anode affects the chemical stability of the anode surface. SiO2, Li2Si2O5, Li2SiO3, and Li3SiOx films were exposed to 1.2 M LiPF6 in the 3:7 wt% ethylene carbonate/ethyl methyl carbonate (EC/EMC) electrolyte for periods of time that are representative of the amount of time it takes to undergo cell formations. Soaked samples were rinsed, dried, and characterized by a combination of attenuated total reflectance-infrared spectroscopy (ATR-IR), focused ion beam-secondary electron microscopy (FIB-SEM), and X-ray photoelectron spectroscopy (XPS) depth profiling. It was found that the rate of the decrease in film thickness of the silicates exposed to the electrolyte over time increases as a function of the lithium content in the thin film. This reaction involves HF etching and LiPF6 salt degradation leading to silicate loss and fluorination throughout the bulk. Understanding this chemical instability is critical to determining the overall mechanism of SEI degradation over time.

ADVANCED PROPULSION SYSTEMS,ENERGY STORAGE↗
DOE OSTI2017

In-situ synchrotron x-ray studies of the microstructure and stability of In 2 O 3 epitaxial films

We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Low-loss single-photon NbN microwave resonators on Si

We present coplanar waveguide (CPW) microwave resonators with exceptionally low loss produced from NbN sputtered on Si. The NbN films are deposited with a modest RF substrate bias during reactive DC magnetron sputtering at a substrate temperature of 250 °C and can achieve a critical temperature as high as 15 K depending on the N2 flow rate. We measure the internal quality factors (Qi) of two such resonators at high-powers near saturation and report high-power quality factors in excess of 1.2 × 106 at 200 mK and 3.5 × 105 at 2 K. We also measure the temperature-dependent frequency shift at high power levels and the quality factor at single-photon power levels. From these measurements, we find a low-power (average photon number less than one) Qi value of 4.2 × 105 at 200 mK, which is consistent with a system limited by two-level-system loss.

Carter, Faustin W. (ORCID:0000000212363517)↗
DOE OSTI2025

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗
DOE OSTI2022

Time-resolved electron energy distribution functions at the substrate during a HiPIMS discharge with cathode voltage reversal

Abstract The time-dependent plasma properties of a high-power impulse magnetron sputtering plasma are investigated which include a positive ‘kick’ pulse on the sputtering target 2 μ s after the main negative pulse, this reversing the voltage on the cathode. At a substrate 15 cm distant from the magnetron, the time-dependent electron energy distribution function (EEDF), plasma potential, potential commute time and plasma diffusion properties are measured using a single Langmuir probe. Results show that the positive pulse on the target expels plasma and raises the plasma potential across the chamber on the order of 1 to 2 μ s, which is the time scale of the electron diffusion. The EEDF at the substrate fits a Druyvesteyn distribution during the main negative pulse rising slightly in average energy over time. The distribution is still Druyvesteyn and at the very start of the positive pulse, but then loses the higher energy electrons and drops in average electron energy as the positive pulse progresses. A Boltzmann equation solver, BOLSIG+, was used to predict the EEDF at the substrate during the positive pulse and it agrees best with the measurements assuming a value of 0.2 Td for the E / N (electric field/gas number density).

Physics↗
DOE OSTI2022

Negative hydrogen ion sources for particle accelerators: Sustainability issues and recent improvements in long-term operations

High brightness, negative hydrogen ion sources are used extensively in scientific facilities operating worldwide. Negative hydrogen beams have become the preferred means of filling circular accelerators and storage rings as well as enabling efficient extraction from cyclotrons. Several well-known facilities now have considerable experience with operating a variety of sources such as RF-, filament-, magnetron- and Penning-type H- ion sources. These facilities include the US Spallation Neutron Source (SNS), Japan Proton Accelerator Research Complex (J-PARC), Rutherford Appleton Laboratory (RAL-ISIS), Los Alamos Neutron Science Center (LANSCE), Fermi National Accelerator Laboratory (FNAL), Brookhaven National Laboratory (BNL), numerous installations of D-Pace (licenced by TRIUMF) ion sources used mainly on cyclotrons and, most recently, the CERN-LINAC-1 injector. This report first summarizes the current performance of these ion sources in routine, daily operations with attention toward source service-periods and availability metrics. Sustainability issues encountered at each facility are also reported and categorized to identify areas of common concern and key issues. Recent ion source improvements to address these issues are also discussed as well as plans for meeting future facility upgrade requirements.

Welton, Robert F.↗
DOE OSTI2024

Microscopic examination of rf-cavity-quality niobium films through local nonlinear microwave response

The performance of superconducting radio-frequency (SRF) cavities is sometimes limited by local defects. To investigate the rf properties of these local defects, especially those that nucleate rf magnetic vortices, a near-field magnetic microwave microscope is employed. Local third-harmonic response ( P 3 f ) and its temperature dependence and rf power dependence are measured for one Nb / Cu film grown by direct current magnetron sputtering (DCMS) and six Nb / Cu films grown by high-power impulse magnetron sputtering (HiPIMS) with systematic variation of deposition conditions. Five out of the six HiPIMS Nb / Cu films show a strong third-harmonic response that is likely coming from rf vortex nucleation due to a low- T c surface defect with a transition temperature between 6.3 and 6.8 K, suggesting that this defect is a generic feature of air-exposed HiPIMS Nb / Cu films. A phenomenological model of surface-defect grain boundaries hosting a low- T c impurity phase is introduced and studied with time-dependent Ginzburg-Landau (TDGL) simulations of probe-sample interaction to better understand the measured third-harmonic response. The simulation results show that the third-harmonic response of rf vortex nucleation caused by surface defects exhibits the same general features as the data, including peaks in third-harmonic response with temperature, and their shift and broadening with higher microwave amplitude. We find that the parameters of the phenomenological model (the density of surface defects that nucleate rf vortices and the depth an rf vortex travels through these surface defects) vary systematically with film deposition conditions. From the point of view of these two properties, the Nb / Cu film that is most effective at reducing the nucleation of rf vortices associated with surface defects can be identified. Published by the American Physical Society 2024

Wang, Chung-Yang (ORCID:0000000184299633)↗
DOE OSTI2021

High Efficiency, Low Cost RF Sources for Accelerators and Colliders

Calabazas Creek Research, Inc. (CCR) and its collaborators are developing high efficiency, low cost RF sources. Phase and Amplitude Controlled Magnetrons: CCR, Fermilab, and Communications & Power Industries, LLC (CPI) recently developed a 100 kW, 1.3 GHz magnetron system with amplitude and phase control. The system operated at more than 80% efficiency and demonstrated rapid control of amplitude and phase. Multiple Beam Triodes: CCR, in collaboration with CPI and JP Accelerator Works, Inc., is developing 200 kW, pulsed and CW RF sources from 350 to 700 MHz with projected efficiencies exceeding 80% and cost of $0.50/Watt. Prototype tubes are scheduled for tests in spring 2021. High Efficiency Klystrons:CCR, CPI, and Leidos, Inc. are building a 1.3 GHz, 100 kW klystron operating at 80% efficiency. High power testing is scheduled for summer 2021. Multiple Beam IOTs: CCR and Georgia Tech Research Institute are developing MBIOTs with simplified input coupling and high efficiency. Simulations indicate that 3rd harmonic drive power can increase the efficiency 8-10 %. The program is developing a prototype tube to produce 200 kW peak, 100 kW average power at 704 MHz.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

RF Results of Nb Coated SRF Accelerator Cavities via HiPIMS

Bulk Niobium (Nb) SRF (superconducting radio frequency) cavities are currently the preferred method for acceleration of charged particles at accelerator facilities around the world. However, bulk Nb cavities have poor thermal conductance and impose material and design restrictions on other components of a particle accelerator. Since the SRF phenomena occurs within a shallow depth of 40 nm (for Nb), a proposed solution to this problem has been to deposit a superconducting Nb thin film on the interior of a cavity made of a suitable alternative material such as copper or aluminum. While this approach has been attempted in the past using DC magnetron sputtering (DCMS), such cavities have never performed at the bulk Nb level. However, new energetic condensation techniques for film deposition offer the opportunity to create suitably thick Nb films with improved density, microstructure and adhesion compared to traditional DCMS. One such technique that has been developed somewhat recently is ?High Power Impulse Magnetron Sputtering? (HiPIMS). Here we report early results from various thin film coatings carried out on 1.3 GHz Cu cavities, a 1.5 GHz Nb cavity, and small Cu coupon samples coated at Jefferson Lab using HiPIMS.

Burton, Matthew Creed↗
DOE OSTI2022

Nb₃Sn Coating of a 2.6 GHz SRF Cavity by Sputter Deposition Technique

Nb₃Sn is of interest as a coating for SRF cavities due to its higher transition temperature Tc ~18.3 K and superheating field Hsh ~400 mT, both are twice that of Nb. Nb₃Sn coated cavities can achieve high-quality factors at 4 K and can replace the bulk Nb cavities operated at 2 K. A cylindrical magnetron sputtering system was built, commissioned, and used to deposit Nb₃Sn on the inner surface of a 2.6 GHz single-cell Nb cavity. With two identical cylindrical magnetrons, this system can coat a cavity with high symmetry and uniform thickness. Using Nb-Sn multilayer sequential sputtering followed by annealing at 950°C for 3 hours, polycrystalline Nb₃Sn films were first deposited at the equivalent positions of the cavity’s beam tubes and equator. The film’s composition, crystal structure, and morphology were characterized by energy dispersive spectroscopy, X-ray diffraction, and atomic force microscopy. The Tc of the films was measured by the four-point probe method and was 17.61 to 17.76 K. Based on these studies, ~1.2 micron thick Nb₃Sn was deposited inside a 2.6 GHz Nb cavity. We will discuss first results from samples and cavity coatings, and the status of the coating system.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Sputter coating of Nb₃Sn into SRF cavity using stoichiometric target

Nb₃Sn has emerged as a leading alternative material due to its higher superconducting critical temperature (Tc) and superheating field (Hsh), promising a viable solution to the intrinsic performance limit currently faced by Nb superconducting radiofrequency (SRF) cavities. We sputter-coated Nb₃Sn inside Nb SRF cavity using a stoichiometric Nb₃Sn tube target in a DC cylindrical magnetron sputter coater. The target was fabricated by growing an estimated >20 μm thick Nb₃Sn layer on a Nb tube via Sn vapor diffusion using Jefferson Lab’s coating system. Approximately 150 nm thick Nb-Sn films were sputter-deposited onto flat Nb samples at positions representing the beam tubes and equator of a 2.6 GHz Nb cavity. Post-deposition annealing at 950 °C for 3 h resulted in the formation of Nb₃Sn. Microstructural analysis of the annealed films was carried out to investigate the morphology and structure of the Nb₃Sn films. Later, a 2.6 GHz Nb SRF cavity was coated with a ~1.2 μm thick sputtered Nb-Sn film using a stoichiometric Nb₃Sn target, followed by annealing. Cryogenic RF testing of the annealed cavity demonstrated a Tc of 17.8 K, indicating the formation of Nb₃Sn. After a light Sn recoating treatment, the cavity achieved a quality factor (Q0) of 6.7E+08 at lower field at 2.0 K.

Accelerator Physics↗
DOE OSTI2022

3rd harmonic magnetometry assessment of NbTiN-based SIS structures

In the quest for alternative superconducting materials to bring accelerator cavity performance beyond the bulk niobium (Nb) intrinsic limits, a promising concept proposes that superconductor-insulator-superconductor (SIS) thin film structures can delay magnetic flux penetration in accelerator cavities to higher fields [1]. NbTiN is a candidate superconductor for such structures. We have demonstrated high quality NbTiN and AlN deposited by reactive direct current magnetron sputtering (DCMS), both for individual layers and multilayers. Interface quality has been assessed for bi-layer stacks with various NbTiN and AlN thicknesses from 500 and 30 nm down to 3 and 1 nm. These SIS structures show continued sharp interfaces. The Hfp enhancement of the films was examined with 3rd harmonic magnetometry. The system was designed and built in an ongoing collaboration with CEA Saclay. It can measure 1? to 2? samples on a temperature controlled stage. This contribution presents the assessment of the first penetration field enhancement with 3rd harmonic magnetometry for standalone films and multilayer nanostructures.

Valente, Anne-Marie↗