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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Photomechanical vibration of thin crystals of polar semiconductors

It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photosensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses.

Lagowski, J.↗
DOE OSTI2021

Electric-field-induced crossover of polarization reversal mechanisms in Al 1–x Sc x N ferroelectrics

Scandium-doped aluminum nitride, Al 1–x Sc x N, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al–Sc–N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al 1–x Sc x N to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms—inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Finally, understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1991

Temperature dependence of the elastic moduli and damping for polycrystalline LiF-22 pct CaF2 eutectic salt

Young's and shear moduli and damping were measured for as-cast polycrystalline LiF-(22 mol pct)CaF2 eutectic specimens as a function of temperature using the piezoelectric ultrasonic composite oscillator technique. The shear modulus decreased with increasing temperature from about 40 GPa at 295 K to about 30 GPa at 1000 K, while the Young modulus decreased from about 115 GPa at 295 K to about 35 GPa at 900 K. These values are compared with those derived from the rule of mixtures using elastic moduli data for LiF and CaF2 single crystals. It is shown that, while the shear modulus data agree reasonably well with the predicted trend, there is a large discrepancy between the theoretical calculations and the Young modulus values, where this disagreement increases with increasing temperature.

Wolfenden, A.↗
NASA NTRS1984

Study of factors determining the radiation sensitivity of quartz crystal oscillators (A0189)

The correlation between defect cluster concentrations observed for different grades of quartz examined by transmission electron microscopy (TEM) and the electrical stability of quartz resonators exposed to complex radiation in an orbital LDEF was determined. It is demonstrated that the technique TEM provides a powerful method for studying the effect of radiation on crystalline quartz. Two factors suggest that the observed clusters may be responsible for the radiation-induced frequency drift and acoustic absorption effects associated with irradiated quartz resonators: (1) the clusters are expected to be very effective in modifying the piezoelectric properties of quartz because of the large strain fields associated with them; (2) both phenomena appear to be sensitive to the impurity concentration. It is suggested that TEM can be used to classify grades of quartz according to their suitability for use in radiation-hard resonators. This technique may identify the impurities that are responsible and thereby effect an improvement in the stability of quartz oscillators.

Venables, J. D.↗
DOE OSTI2024

Self–Healing and Stretchable Molecular Ferroelectrics with High Expandability

The interplay between crystal ordering and stretchability is frequently encountered in contemporary materials science, particularly in the case of ferroelectrics. The inherent dilemma arises when these materials need to withstand repetitive mechanical deformations or stretching without sacrificing their crystal integrity, all while retaining their remarkable ferroelectric properties and even exhibiting self-healing capabilities. This complexity further presents a significant challenge in the design and engineering of mechanically rigid molecular ferroelectric crystals, particularly for applications where both precise crystalline structure and mechanical adaptability are crucial. In this study, the humidity-controlled expansion and contraction, dissolution, and recrystallization of a self-assembled molecular ferroelectric-in-hydrogel framework are reported. Self-healing ferroelectric-in-hydrogel networks exhibit a recyclable humidity-tailored ionic conductivity from 2.86 × 10 –6 to 1.36 × 10 –5 S cm –1 , facilitating the stretchable piezoelectric sensing. Additionally, the dynamic bond reforming interactions are observed, leading to the tailoring of Young's modulus from 452 to 170 MPa, maintaining ferroelectricity under a strain of 20% with a piezoelectric coefficient of 15.7 pC N –1 . Upon lattice contraction, the molecular contacts undergo reforming, leading to the restoration of stretchable ferroelectrics/piezoelectrics and paving the way for stretchable bioelectronics for full-body motion monitoring. The capabilities highlighted here open avenues for stretchable and self-healing ferroelectric-in-hydrogel bioelectronic technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Functional properties of Yttrium Iron Garnett thin films on graphene-coated Gd 3 Ga 5 O 12 for remote epitaxial transfer

Remote epitaxial growth via a graphene interlayer and subsequent mechanical exfoliation of a free-standing membrane is a recently developed technique used to transfer complex oxide thin films onto non-native substrates to form heterogeneously integrated structures for various device applications. One such oxide is Yttrium Iron Garnet (YIG), a material of choice for a wide range of magnetoelectric and spintronic devices owing to its strong magnetic properties and low microwave losses. YIG is predominantly grown on lattice matched Gadolinium Gallium Garnet (GGG) substrates, but by utilizing the remote epitaxy technique, high quality YIG films can be transferred from GGG onto another substrate such as piezoelectric Lithium Niobate (LN). Mechanical strain coupling between the layers and magnetostrictive nature of YIG would allow for the investigation of the interplay in YIG/LN structures leading to the design of novel frequency agile magneto-acoustic devices. In this study functional properties of a YIG film grown using PLD on graphene-coated GGG substrate were investigated and compared to traditional YIG on GGG. Both materials were characterized in terms of crystal structure, surface morphology, FMR and Gilbert damping, and Raman and XAS spectroscopy. Further, it was found that YIG on graphene-coated GGG exhibits significantly higher microwave losses than standard YIG on GGG (FMR linewidth 30.9 vs 2.1 Oe at 10 GHz, and Gilbert damping coefficient 15.4x10 -4 vs 3.4x10 -4 respectively), which was attributed to increased concentration of Fe 2+ cations in YIG/Graphene/GGG. While the damping is higher in these studied films compared to YIG grown directly on GGG, the resulting properties are still very favorable compared to many other competing materials which can be grown without the need for lattice matched substrates, such as metallic ferromagnets.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spatiotemporally resolved measurements of electric field around a piezoelectric transformer using electric-field induced second harmonic (E-FISH) generation

When a piezoelectric transformer (PT) is actuated at its second harmonic frequency by a low input voltage, the generated electric field at the distal end can be sufficient to breakdown the surrounding gas, making them attractive power sources for non-equilibrium plasma generation. Understanding the potential and electric fields produced in the surrounding medium by the PT is important for effectively designing and using PT plasma devices. In this work, the spatiotemporally resolved characteristics of the electric field generated by a PT operating in open air have been investigated using the femtosecond electric field-induced second harmonic generation (E-FISH) method. Here, electric field components were determined by simultaneously conducting E-FISH measurements with the incident laser polarized in two orthogonal directions relative to the PT crystal. Results of this work demonstrate the spatial distribution of electric field around the PT’s output distal end and how it evolves as a function of time. Notably, the strongest electric field appears on the face of the PT’s distal surface, near the top and bottom edges and decreases by approximately 70% over 3 mm. The time delay between the PT’s input voltage and measured electric field indicates that there is an about 0.45 phase difference between the PT’s input voltage and output signal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Shot‐Noise‐Driven Macroscopic Vibrations and Displacement Transduction in Quantum Tunnel Junctions

Back‐action is an inevitable result of quantum measurement. Although the microscopic impacts of shot‐noise back‐action have been explored, macroscopic evidence is seldom documented, especially in the field of electrical transport. Tunneling shot‐noise has been shown to excite the fundamental flexural mode of the host crystal using a sub‐GHz lumped‐element radio‐frequency quantum point contact (QPC). Here, in this study, this aspect of shot‐noise back‐action is examined at much higher operational frequencies and wider bandwidths by employing a GaAs QPC integrated into a planar superconducting cavity within the circuit‐QED framework, leading to the observation of the excitation of multiple mechanical modes. The device operates in the shot‐noise‐limited regime. Constructed on a piezoelectric platform, there is positive feedback between the electrical and mechanical degrees of freedom within the QPC. Shot‐noise excites piezoelectric vibrational modes; concurrently the resulting polarization charges enhance tunneling and develop peaks in the shot‐noise spectra at the modal frequencies. The excitation of vibrational modes is a macroscopic demonstration of measurement back‐action, and the amplitudes of the noise‐peaks enable us to calibrate the displacement sensitivity of the QPC‐resonator systems, which is in the range $≈ 35 fm/√ Hz$, making it an excellent sensor for ultra‐sensitive and rapid strain/displacement detection.

Kumbhakar, Prasanta [Indian Institute of Science E↗
DOE OSTI2020

A Chip-Scale Oscillation-Mode Optomechanical Inertial Sensor Near the Thermodynamical Limits

Modern navigation systems integrate the global positioning system (GPS) with an inertial navigation system (INS), which complement each other for correct attitude and velocity determination. Here, the core of the INS integrates accelerometers and gyroscopes used to measure forces and angular rate in the vehicular inertial reference frame. With the help of gyroscopes and by integrating the acceleration to compute velocity and distance, precision and compact accelerometers with sufficient accuracy can provide small–error location determination. Solid–state implementations, through coherent readout, can provide a platform for high performance acceleration detection. In contrast to prior accelerometers using piezoelectric or capacitive readout techniques, optical readout provides narrow–linewidth high–sensitivity laser detection along with low–noise resonant optomechanical transduction near the thermodynamical limits. Here an optomechanical inertial sensor with an 8.2 µg Hz –1/2 velocity random walk (VRW) at an acquisition rate of 100 Hz and 50.9 µg bias instability is demonstrated, suitable for applications, such as, inertial navigation, inclination sensing, platform stabilization, and/or wearable device motion detection. Driven into optomechanical sustained–oscillation, the slot photonic crystal cavity provides radio–frequency readout of the optically–driven transduction with an enhanced 625 µg Hz –1 sensitivity. Measuring the optomechanically–stiffened oscillation shift, instead of the optical transmission shift, provides a 220× VRW enhancement over pre–oscillation mode detection.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2003

Scanning Tunneling Optical Resonance Microscopy

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically < 10 Hz) that the feedback circuit could respond, then the voltage applied to the piezoelectric tip-height actuator could be measured by use of a lock-in amplifier locked to the modulation (chopping) signal. However, at a high modulation frequency (typically in the kilohertz range or higher), the feedback circuit would be unable to respond. In this case, the photoenhanced portion of the tunneling current could be measured directly. For this purpose, the tunneling current would be passed through a precise resistor and the voltage drop would be measured by use of the lock-in amplifier.

Bailey, Sheila↗
DOE OSTI2020

Purely Cubic Spin Splittings with Persistent Spin Textures

Purely cubic spin splittings in the band structure of bulk insulators have not been extensively investigated yet despite the fact that they may pave the way for novel spin-orbitronic applications and can also result in a variety of promising spin phenomena. By symmetry analysis and first-principles simulations, we report symmetry-enforced purely cubic spin splittings (SEPCSS) that can even lead to persistent spin textures. In particular, these SEPCSS can be thought to be complementary to the cubic Rashba and cubic Dresselhaus types of spin splittings. Strikingly, the presently discovered SEPCSS are expected to exist in the large family of materials crystallizing in the $\bar{6}m2$ and $\bar{6}$ point groups, including the Ge 3 Pb 5 O 11 , Pb 7 Br 2 F 12 , and Pb 7 Cl 2 F 12 compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Critical structural parameter determining magnetic phases in the F⁡e 2 ⁢M⁢o 3 ⁢O 8 altermagnet system

A systematic structural investigation of F⁡e 2 ⁢M⁢o 3⁢ O 8 as a function of pressure, temperature, and magnetic field reveals that the 𝑃⁢6 3 ⁢𝑚⁢𝑐 space group remains robust over a wide range of conditions. No changes in the long-range crystal structure are observed for pressures up to 10 GPa, temperatures between 11 K and 300 K, and magnetic fields up to 9 T. The magnetostructural response, quantified by Δ⁢𝑐/𝑐, is determined for magnetic fields applied transverse to the crystallographic 𝑐 axis, demonstrating strong magnetoelastic coupling. The well-known magnetic-field-induced transition is confirmed to be first order and isostructural, occurring between two distinct altermagnetic states. Importantly, this transition can also be accessed using magnetic fields applied within the 𝑎𝑏 plane. When expressed in terms of the 𝑐/𝑎 ratio, the structural evolution under pressure (0–10 GPa) maps continuously onto that observed across the full Zn substitution range in (F⁡e 1−𝑦⁢ Z⁢n 𝑦 )2 M⁢o 3 ⁢O 8 ⁢(0 ≤ 𝑦 ≤ 1), indicating a common underlying structural control parameter. Furthermore, these results demonstrate that the 𝑐-axis lattice parameter is the primary structural degree of freedom governing magnetic behavior under external tuning parameters. More broadly, they indicate that magnetic order in this family of complex oxides (𝐴 2 ⁢M⁢o 3 ⁢O 8 , 𝐴 = Co,Mn,Ni) can be systematically tuned via pressure. This tunability highlights these materials as promising platforms for controllable magnetic switching, particularly in thin films integrated with piezoelectric substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2026

GaN Core-shell Nanofin Vertical Transistor (CoNVerT): A New Direction for Power Electronics (Final Scientific/Technical Report)

A novel power transistor architecture, the GaN c ore-shell n anofin ver tical transistor (CoNVerT) to address fundamental challenges in realizing the ultimate limit of GaN power transistor performance was explored experimentally. This technology promises ultra-high-efficiency high voltage/high power applications (e.g. DC/DC converters, motor control, fast charging, actuation), as well as to operate in harsh environments. The device exploits a vertical superjunction structure based on an experimentally-validated core-shell nanofin growth process in which lateral p-n heterojunctions are formed in a single growth step, while still maintaining vertical current flow for compact die size and low cost. The concept leverages the best properties of GaN for mid-range voltage applications: high mobility, high breakdown voltage, and native heterojunction enhancement-mode operation. Due to the crystallographic nature of the nanofin growth by molecular beam epitaxy, the sidewall heterojunctions occur on non-polar planes, resulting in ultra-smooth interfaces for high mobility, no sidewall etch damage and related surface/interface states, and elimination of piezoelectric effects that can limit reliability in conventional structures. This also facilitates superjunction formation for maximum device performance, and the selective-area growth of the nanofin results in dislocation-free growth, even on low-cost Si (111) substrate. In this program, core-shell nanofins were grown by molecular beam epitaxy, test structures to evaluate the doping, resistivity, and other electrical properties were fabricated, and the material and test structures were characterized in detail. The work identified clear potential (e.g., the doping was well controlled as required for superjunction concepts), but also additional areas that require additional effort to resolve (some unexpected crystal defects were encountered that require additional engineering to overcome). Simulation studies of the proposed concept validate that the fundamental approach is very promising, but additional effort in experimental realization is needed.

42 ENGINEERING↗
NASA NTRS2006

Stabilizing Microwave Frequency of a Photonic Oscillator

A scheme for stabilizing the frequency of a microwave signal is proposed that exploits the operational characteristics of a coupled optoelectronic oscillator (COEO) and related optoelectronic equipment. An essential element in the scheme is a fiber mode-locked laser (MLL), the optical frequency of which is locked to an atomic transition. In this scheme, the optical frequency stability of the mode-locked laser is transferred to that of the microwave in the same device. Relative to prior schemes for using wideband optical frequency comb to stabilize microwave signals, this scheme is simpler and lends itself more readily to implementation in relatively compact, rugged equipment. The anticipated development of small, low-power, lightweight, highly stable microwave oscillators based on this scheme would afford great benefits in communication, navigation, metrology, and fundamental sciences. COEOs of various designs, at various stages of development, in some cases called by different names, have been described in a number of prior NASA Tech Briefs articles. A COEO is an optoelectronic apparatus that generates both short (picosecond) optical pulses and a steady microwave signal having an ultrahigh degree of spectral purity. The term "coupled optoelectronic" in the full name of such an apparatus signifies that its optical and electronic oscillations are coupled to each other in a single device. The present frequency-stabilization scheme is best described indirectly by describing the laboratory apparatus used to demonstrate it. The apparatus (see figure) includes a COEO that generates a comb-like optical spectrum, the various frequency components of which interfere, producing short optical pulses. This spectrum is centered at a nominal wavelength of 1,560 nm. The spectrum separation of this comb is about 10 GHz, as determined primarily by the length of an optical loop and the bandpass filter in the microwave feedback loop. The optical loop serves as microwave resonator having a very high value of the resonance quality factor (Q). The optical frequency of MLL is then stabilized by locking it to an atomic transition as described below. The COEO contains a tunable 1-nm band-pass optical filter and a piezoelectric-transducer (PZT) drum over which a stretch of fiber is wound. The 1-nm-wide pass band of the filter provides coarse tuning to overlap the frequency comb with the atomic transition frequency. Controlled stretching of the fiber by means of the PZT drum can be used in conjunction with temperature control for locking the laser frequency. To reference to an atomic resonance at 780 nm in this demonstration setup, the optical output of the COEO at 1,560 nm is fed through an erbium-doped-fiber amplifier (EDFA) to a frequency doubler in the form of a periodically poled lithium niobate (PPLN) crystal. The frequency-doubled output is combined with the output of a separate frequency-stabilized diode laser at a photodetector. As described thus far, the two 780-nm laser subsystems are nominally independent of each other and can, therefore, operate at different frequencies. Hence, at the photodetector, the two laser beams interfere, so that the output of the photodetector includes a beat note (a component at the difference between the two laser frequencies).

Maleki, Lute↗
DOE OSTI2025

Anomalous elastic softening in ferroelectric hafnia under pressure

his study employs first-principles density-functional theory (DFT) calculations to explore the elastic and mechanical properties of ferroelectric hafnia (HfO 2 ) in its polar orthorhombic 𝑃⁢𝑐⁢𝑎⁢2 1 phase under varying hydrostatic pressure conditions up to 30 GPa. Utilizing a plane-wave basis set and Perdew-Burke-Ernzerhof generalized-gradient approximation for solids in our DFT calculations, we investigate both pure and yttrium-substituted HfO 2 . Our findings reveal an anomalous reduction in the 𝐶 33 component of the elastic tensor with increasing pressure, which becomes significant above 15 GPa and signals a potential pressure-driven structural phase transition at higher pressure. The analysis of atomic displacements under pressure sheds light on the unusual mechanical behavior and phase stability of this material. Additionally, we observe a transition from an indirect band gap to a direct band gap with increasing pressure, which could have significant implications for optical applications. Here, the effects of yttrium substitution on the mechanical and electronic properties are further examined, revealing that yttrium substitution softens the elastic response of this material and reduces the electronic band gap. These results enhance our understanding of elastic and mechanical responses of ferroelectric hafnia and its potential for applications in microelectronics, piezoelectric devices, and nonvolatile ferroelectric random-access memories. Further experimental validation is recommended to confirm our predictions and explore the practical implications of the observed phase transitions and electronic behavior of the ferroelectric hafnia under high-pressure conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2000

Charge Generation and Propagation in Igneous Rocks

Resistivity changes, ground potentials, electromagnetic (EM) and luminous signals prior to or during earthquakes have been reported, in addition to ground uplift and tilt, and to changes in the seismic wave propagation parameters. However, no physical model exists that ties these diverse phenomena together. Through time-resolved impacts experiments it has been observed that, when igneous rocks (gabbro, diorite, granite) are impacted at low velocities (approx. 100 m/sec), highly mobile electronic charge carriers are generated, spreading from a small volume near the impact point, causing electric potentials, EM and light emission. The rock becomes momentarily conductive. When impacted at higher velocities (approx. 1.5 km/sec), the propagation of the P and S waves is registered through the transient piezoelectric response of quartz. At the same time, the rock volume is filled with mobile charge carriers, and a positive surface potential is registered. During the next 1-2 msec the surface potential oscillates, due to electron injection from ground. These observations are consistent with positive holes, e.g. defect electrons in the O(2-) sublattice, that can travel via the O 2p-dominated valence band of the silicate minerals at the speed of a phonon-mediated charge transfer. Before activation, the positive hole charge carriers lay dormant in form of positive hole pairs, PHP, electrically inactive, chemically equivalent to peroxy links in the structures of constituent minerals. PHPs are introduced by way of hydroxyl (O3Si-OH) incorporated into nominally anhydrous minerals when they crystallize in water-laden environments. Given that sound waves of even relatively low intensity appear to cause PHPs dissociation, thus generating mobile positive holes, it is proposed that microfracturing during rock deformation cause PHP dissociation. Depending on where and how much the rock volume is stressed, the positive holes are expected to form fluctuating charge clouds in the earthquake source region that may account for earthquake-related electrical phenomena and the reported low frequency EM signals.

Freund, Friedemann↗
DOE OSTI2021

Single-Particle Studies Reveal a Nanoscale Mechanism for Elastic, Bright, and Repeatable ZnS:Mn Mechanoluminescence in a Low-Pressure Regime

Mechanoluminescent materials, which emit light in response to elastic deformation, are demanded for use as in situ stress sensors. ZnS doped with Mn is known to exhibit one of the lowest reported thresholds for appearance of mechanoluminescence, with repeatable light emission under contact pressure <10 MPa. Here, the physical basis for such behavior remains as yet unclear. Here, reliable microscopic detection of mechanoluminescence of single ZnS:Mn microparticles, in combination with nanoscale structural characterization, provides evidence that the mechanoluminescent properties of these particles result from interplay between a non-centrosymmetric crystal lattice and its defects, viz., dislocations and stacking faults. Statistical analysis of the distributions of mechanoluminescence energy release trajectories reveals two distinct mechanisms of excitation: one attributable to a piezo-phototronic effect and the other due to dislocation motion. At pressures below 8.1 MPa, both mechanisms contribute to mechanoluminescent output, with a dominant contribution from the piezo-phototronic mechanism. In contrast, above 8.1 MPa, dislocation motion is the primary excitation source. For the piezo-phototronic mechanism, we propose a specific model that accounts for elastic ZnS:Mn mechanoluminescence under very low pressure. The charged interfaces in stacking faults lead to the presence of filled traps, which otherwise would be empty in the absence of the built-in electric field. Upon application of external stress, local enhancement of the piezoelectric field at the stacking faults’ interfaces facilitates release of the trapped carriers and subsequent luminescence. This field enhancement explains how <10 MPa pressure produces thousands of photons.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

High Entropy Oxide Relaxor Ferroelectrics

Relaxor ferroelectrics are important in technological applications due to strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design materials in this class generally rely on substitutional doping as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO 3 perovskite allows stabilization of relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are utilized to synthesize single-crystal Ba(Ti 0.2 Sn 0.2 Zr 0.2 Hf 0.2 Nb 0.2 )O 3 [Ba(5B)O] films. The high levels of configurational disorder present in this system are found to influence dielectric relaxation, phase transitions, nanopolar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy, and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first-principles theory calculations are used to predict possible combinations of cations to design relaxor ferroelectrics and quantify the relative feasibility of synthesizing these highly disordered single-phase perovskite systems. Further, the ability to stabilize single-phase perovskites with various cations on the B-sites offers possibilities for designing high-performance relaxor ferroelectric materials for piezoelectric, pyroelectric, and electrocaloric applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗