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Results for “Phonon scattering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Strange metal behavior of the Hall angle in twisted bilayer graphene

Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle ≈ 1.08° hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity, and magnetism. Additionally, a linear-in-temperature normal state resistivity in TBG has been attributed to an exotic Planckian dissipation mechanism but can be equally well explained in terms of conventional electron-phonon scattering. To address this issue, we perform combined temperature-dependent transport measurements of both the longitudinal and Hall resistivities in near-magic-angle TBG. While the observed longitudinal resistivity follows linear temperature T dependence consistent with previous reports, the Hall resistance shows an anomalous T dependence with the cotangent of the Hall angle cot Θ H ∝T 2 . Boltzmann theory for quasiparticle transport predicts that both the resistivity and cot Θ H should have the same T dependence, contradicting the observed behavior. This failure of quasiparticle-based theories is reminiscent of other correlated strange metals such as cuprates.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Switching of the electron-phonon interaction in 1 T –VSe 2 assisted by hot carriers

We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1T-VSe 2 . Ultrafast snapshots of the light-induced hot carrier dynamics and nonequilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. Furthermore, the hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of (200 ± 40) fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasiequilibrium state that is experimentally observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Spin-orbit coupling induced demagnetization in Ni: Ab initio nonadiabatic molecular dynamics perspective

Spin-orbit coupling (SOC), which can induce spin flip during the relaxation of photoexcited charge carrier, plays a crucial role in spin dynamics. Here in this work, we have used time-domain ab initio nonadiabatic molecular dynamics (NAMD) method to study the SOC induced ultrafast demagnetization in Ni at 300K. The spin-diabatic representation using spin-polarized Kohn-Sham (KS) basis sets and spin-adiabatic representation using spinor basis sets have been applied, and both of them achieve demagnetization in Ni with a timescale around 100fs. The spin-diabatic representation suggests a picture that the electron-phonon coupling (EPC) provides direct energy relaxation channel among the same-spin states, while the SOC can induce spin flip. After photoexcitation, it is found the spin-minority electrons relax to the same-spin states rather than the opposite-spin states, since EPC is larger than SOC by one order of magnitude. By contrast, for the spin-majority electrons, spin flip occurs since there are no empty same-spin states as electron acceptor above the Fermi level. The different relaxation pathways for spin-majority and spin-minority electrons induce the demagnetization. The spin-adiabatic representation provides an Elliott-Yafet spin-phonon scattering picture. The SOC induced reduction of magnetic moment in Ni may induce magnon to drive further demagnetization. The ab initio NAMD simulation provides a critical angle to understand how the SOC and EPC affect demagnetization process in Ni.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ion irradiation induced crystalline disorder accelerates interfacial phonon conversion and reduces thermal boundary resistance

Traditional understanding of the thermal boundary resistance (TBR) across solid-solid interfaces posits that the vibrational densities of states overlap between materials dictates interfacial energy transport, with phonon scattering occurring at the interface. Using atomistic simulations, we show a mechanism for control of TBR; point defects near an interface can lead to both short- and midrange disorder, accelerating the conversion of vibrational energy between bulk and interfacial modes, ultimately reducing the TBR. In conclusion, we experimentally demonstrate this reduction through ion irradiation of gallium nitride and subsequently measuring the TBR across Al/GaN interfaces.

Pfeifer, Thomas W.↗
DOE OSTI2025

Exciton thermalization dynamics in monolayer MoS2: A first-principles Boltzmann equation study

Understanding exciton thermalization is critical for optimizing optoelectronic and photocatalytic processes in many materials. However, it is hard to access the dynamics of such processes experimentally, especially on systems such as monolayer transition metal dichalcogenides, where various low-energy excitations pathways can compete for exciton thermalization. Here, we study exciton dynamics due to exciton-phonon scattering in monolayer MoS2 from a first-principles, interacting Green's function approach, to obtain the relaxation and thermalization of low-energy excitons following different initial excitations at different temperatures. We find that the thermalization occurs on a picosecond time scale at 300 K but can increase by an order of magnitude at 100 K. The long total thermalization time, owing to the nature of its excitonic band structure, is dominated by slow spin-flip scattering processes in monolayer MoS2. In contrast, thermalization of excitons in individual spin-aligned and spin-anti-aligned channels can be achieved within a few hundred fs when exciting higher-energy excitons. We further simulate the intensity spectrum of time-resolved angle-resolved photoemission spectroscopy experiments and anticipate that such calculations may serve as a map to correlate spectroscopic signatures with microscopic exciton dynamics.

Chan, Yang-hao↗
DOE OSTI2024

Effective field theory for dark matter absorption on single phonons

Single phonon excitations, with energies in the 1–100 meV range, are a powerful probe of light dark matter (DM). Utilizing effective field theory, we derive a framework to compute DM absorption rates into single phonons starting from general DM-electron, proton, and neutron interactions. We apply the framework to a variety of DM models: Yukawa coupled scalars, axionlike particles with derivative interactions, and vector DM coupling via gauge interactions or Standard Model electric and magnetic dipole moments. We find that GaAs or Al 2 O 3 targets can set powerful constraints on a U ( 1 ) B − L model, and targets with electronic spin ordering are similarly sensitive to DM coupling to the electron magnetic dipole moment. Lastly, we make the code, (an extension of the existing code which computes general DM–single phonon scattering rates), publicly available. Published by the American Physical Society 2024

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Mesoscopic finite-size effects of unconventional electron transport in PdCoO 2

A wide range of unconventional transport phenomena has recently been observed in single-crystal delafossite metals. Here, we present a theoretical framework to elucidate electron transport using a combination of first-principles calculations and numerical modeling of the anisotropic Boltzmann transport equation. Using PdCoO 2 as a model system, we study different microscopic electron and phonon scattering mechanisms and establish the mean free path hierarchy of quasiparticles at different temperatures. We treat the anisotropic Fermi surface explicitly to numerically obtain experimentally-accessible transport observables, which bridge between the “diffusive,” “ballistic,” and “hydrodynamic” transport regime limits. Further, we illustrate that the distinction between the “quasiballistic” and “quasihydrodynamic” regimes is challenging and often needs to be quantitative in nature. From first-principles calculations, we populate the resulting transport regime plots and demonstrate how the Fermi surface orientation adds complexity to the observed transport signatures in micrometer-scale devices. Our work provides key insights into microscopic interaction mechanisms on open hexagonal Fermi surfaces and establishes their connection to the macroscopic electron transport in finite-size channels.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spin-strain interactions under hydrostatic pressure in α-RuCl 3

We investigate the effects of hydrostatic pressure on 𝛼−RuCl 3 , a prototypical material for the Kitaev spin model on a honeycomb lattice with a possible spin-liquid ground state. Using ultrasound measurements at pressures up to 1.16 GPa, we reveal significant modifications of the acoustic properties and the 𝐻−𝑇 phase diagram of this material. Hydrostatic pressure suppresses the three-dimensional magnetic order and induces a dimerization transition at higher pressures. At low pressures, the sound attenuation exhibits a linear temperature dependence, while above 0.28 GPa, it becomes nearly temperature independent, suggesting a shift in the phonon scattering regime dominated by Majorana fermions. These findings provide new insights into spin-strain interactions in Kitaev magnets and deliver a detailed characterization of the 𝐻−𝑇 phase diagram of 𝛼−RuCl 3 under hydrostatic pressure.

Focused ion beam↗
DOE OSTI2023

Reflective Fiber Temperature Probe Based on Localized Surface Plasmon Resonance towards Low-Cost and Wireless Interrogation

Reflection fiber temperature sensors functionalized with plasmonic nanocomposite material using intensity-based modulation are demonstrated for the first time. Characteristic temperature optical response of the reflective fiber sensor is experimentally tested using Au-incorporated nanocomposite thin films deposited on the fiber tip, and theoretically validated using a thin-film-optic-based optical waveguide model. By optimizing the Au concentration in a dielectric matrix, Au nanoparticles (NP) exhibit a localized surface plasmon resonance (LSPR) absorption band in a visible wavelength that shows a temperature sensitivity ~0.025%/°C as a result of electron–electron and electron–phonon scattering of Au NP and the surrounding matrix. Detailed optical material properties of the on-fiber sensor film are characterized using scanning electron microscopy (SEM) and focused-ion beam (FIB)-assisted transmission electron microscopy (TEM). Airy’s expression of transmission and reflection using complex optical constants of layered media is used to model the reflective optical waveguide. A low-cost wireless interrogator based on a photodiode transimpedance-amplifier (TIA) circuit with a low-pass filter is designed to integrate with the sensor. The converted analog voltage is wirelessly transmitted via 2.4 GHz Serial Peripheral Interface (SPI) protocols. Feasibility is demonstrated for portable, remotely interrogated next-generation fiber optic temperature sensors with future capability for monitoring additional parameters of interest.

47 OTHER INSTRUMENTATION↗
NASA NTRS1981

Electrical conductivity and electron-spin resonance in oxidatively stabilized polyacrylonitrile subjected to elevated temperature

Electrical conductivity and electron spin resonance measurements are presented for oxidatively stabilized polyacrylonitrile (PAN) fibers subjected to heat treatment at temperatures ranging from 700 to 950 K. Conductivity measurements made at temperatures between 77 and 523 K reveal that PAN fibers heat treated in vacuum behave as semiconductors, with a room-temperature conductivity dominated by the contributions of impurity states, with an activation energy of 88 kcal/mole. A decrease in conductivity is observed upon air which is attributed to a decrease in the electron-phonon scattering time. ESR spectra indicate that conducting pathways having metallic properties are formed at temperatures as low as 715 K, although the contribution of these pathways to the room-temperature conductivity is extremely small next to the contribution of localized spin centers.

Lerner, N. R.↗
NASA NTRS1984

High-temperature thermoelectric energy converstion. I - Theory

The high-temperature thermoelectric energy-conversion theory is examined. It is shown that semiconductors are the logical choices for high-figure of merit-value materials, but the requirements for optimization differ depending on whether the material is classed as a broad-band or narrow-band semiconductor. Optimization is discussed as a function of temperature. Phonon scattering mechanisms are considered; and for the reduction of thermal conductivity, basic material guidelines are given. Although experimental results indicate that ZT (where Z is the figure of merit and T is the temperature) of about 1 represents an upper limit, there is in fact, no theoretical limitation. It is unlikely that the Z values will be significantly reduced by radiation transfer at temperatures lower than 2000 K. The current status of materials research is also considered. The rare-earth chalcogenides which behave as n-type semi-conductors and the boron-rich borides which exhibit hopping p-type conductivity behavior are the materials that show promise for high-temperature Z values. The reasons for low thermal conductivities in these materials is discussed.

Wood, C.↗
NASA NTRS1987

High temperature thermoelectric energy conversion

The theory and current status of materials research for high-temperature thermoelectric energy conversion are reviewed. Semiconductors are shown to be the preferred class of materials for this application. Optimization of the figure of merit of both broadband and narrow-band semiconductors is discussed as a function of temperature. Phonon scattering mechanisms are discussed, and basic material guidelines are given for reduction of thermal conductivity. Two general classes of materials show promise for high temperature figure of merit (Z) values, namely the rare earth chalcogenides and the boron-rich borides. The electronic transport properties of the rare earth chalcogenides are explicable on the basis of degenerate or partially degenerate n-type semiconductors. Boron and boron-rich borides exhibit p-type hopping conductivity, with detailed explanations proposed for the transport differing from compound to compound. Some discussion is presented on the reasons for the low thermal conductivities in these materials. Also, ZTs greater than one appear to have been realized at high temperature in many of these compounds.

Wood, Charles↗
NASA NTRS1988

Theory of high-field electronic transport in bulk ZnS and ZnSe

This paper theoretically investigates the nature of electronic transport and the high-energy tails of the electron distribution functions in bulk ZnSe and ZnS as a function of the applied electric field were investigated using calculations based on an ensemble Monte Carlo model. The calculations include the full details of the first two conduction bands as well as the full-order treatment of the electron-phonon scattering mechanisms. Results of high-field electronic transport calculations show that the electron energy distribution function is significanty cooler in ZnS than in ZnSe at comparable electric field strengths. The cooler distribution in ZnS is due to the much greater electron scattering rate. Consequently, it is more difficult to achieve carrier heating to comparable energies in ZnS than in ZnSe.

Brennan, Kevin↗
NASA NTRS1991

Low-Thermal-Conduction Links For Silicon Sensors

Simple method of texturing surface of silicon reduces thermal conductivities of links in silicon x-ray calorimeters and infrared bolometers. Gives links high density of phonon scattering sites reducing conduction of heat. Links made shorter and more robust. Used in making x-ray calorimeters and infrared bolometers. Applicable to any microelectronic device in which high degree of thermal isolation needed.

Mott, D. Brent↗
NASA NTRS1990

Experimental approaches for improving SiGe thermoelectric efficiency at JPL

Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.

Borshchevsky, Alex↗
NASA NTRS1993

Microchannel plate modal gain variations with temperature

Measurements of the modal gain of two high-gain curved-channel microchannel plates (MCPs) at various operating temperatures are presented. Both MCPs were fabricated from the Long Life glass with 12-micron diam channels on 15-micron centers. The modal gain was found to decrease with increasing temperature at a rate of -0.1 percent C. This reduction of gain with temperature is attributed primarily to an axial temperature gradient along each MCP channel creating a nonuniform electric field within the channel that lowers the effective output gain. A lowering of the secondary electron yield resulting from increased phonon scattering of secondary electrons released within the walls of the MCP channels was assessed, but was found to have a negligible contribution to the drop in gain with temperature.

Slater, David C.↗
NASA NTRS1996

Preparation and Thermoelectric Properties of the Skutterudite-Related Phase Ru(0.5)Pd(0.5)Sb3

A new skutterudite phase Ru(0.5)Pd(0.5)Sb3 was prepared. This new phase adds to a large number of already known materials with the skutterudite structure which have shown good potential for thermoelectric applications. Single phase, polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal-expansion coefficient, and differential thermal analysis measurements. Ru(0.5)Pd(0.5)Sb3 has a cubic lattice, space group Im3 (T(sup 5, sub h)), with a = 9.298 A and decomposes at about 920 K. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured on hot-pressed samples over a wide range of temperatures. Preliminary results show that Ru(0.5)Pd(0.5)Sb3 behaves as a heavily doped semiconductor with an estimated band gap of about 0.6 eV. The lattice thermal conductivity of Ru(0.5)Pd(0.5)Sb3 is substantially lower than that of the binary isostructural compounds CoSb3 and IrSb3. The unusually low thermal conductivity might be explained by additional hole and charge transfer phonon scattering in this material. The potential of this material for thermoelectric applications is discussed.

Caillat, T.↗