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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ultrafast Carrier Drift Transport Dynamics in CsPbI3 Perovskite Nanocrystalline Thin Films

We study the early time carrier drift dynamics in CsPbI3 nanocrystal thin films with a sub 25 ps time resolution. Prior to trapping, carriers exhibit band-like transport characteristics, which is similar to those of traditional semiconductor solar absorbers including Si and GaAs due to optical phonon and carrier scattering at high temperatures. In contrast to the popular polaron scattering mechanism, the CsPbI3 nanocrystal thin film demonstrates the strongest optical phonon scattering mechanism among other inorganic-organic hybrid perovskites, Si, and GaAs. This ultrafast dynamics study establishes a foundation for understanding the fundamental carrier drift properties that drive perovskite nanocrystal optoelectronics.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,S↗
DOE OSTI2025

Time-Domain Extreme-Ultraviolet Diffuse Scattering Spectroscopy of Nanoscale Surface Phonons

Here, we report the observation of dynamic fringe patterns in the diffuse scattering of extreme ultraviolet light from surfaces, following femtosecond optical excitation. At each point on the detector, the diffuse scattering intensity exhibits oscillations at well-defined frequencies that correspond to surface phonons with wave vectors determined by the scattering geometry, indicating that the optical excitation generates coherent surface phonons propagating in all directions and spanning a wavelength range from 60 to 300 nm. This phenomenon is observed on a variety of samples, including single-layer and multilayer metal films, as well as bulk semiconductors. The measured surface phonon dispersions show good agreement with theoretical calculations. By comparing signal amplitudes from samples with different surface morphologies, we find that the excitation mechanism is linked to the natural surface roughness of the samples. However, the signal is still detectable on extremely smooth surfaces with subnanometer roughness. Our findings demonstrate a simple and effective method for optically exciting coherent surface phonons with nanoscale wavelengths on a wide range of solid samples and establish a foundation for surface phonon spectroscopy in a wave vector range well beyond the limit of conventional surface Brillouin scattering.

Capotondi, F. [Elettra-Sincrotrone Trieste (Italy)↗
DOE OSTI2022

Enhanced Electron Correlation and Significantly Suppressed Thermal Conductivity in Dirac Nodal-Line Metal Nanowires by Chemical Doping

Enhancing electron correlation in a weakly interacting topological system has great potential to promote correlated topological states of matter with extraordinary quantum properties. Here, the enhancement of electron correlation in a prototypical topological metal, namely iridium dioxide (IrO 2 ), via doping with 3d transition metal vanadium is demonstrated. Single-crystalline vanadium-doped IrO 2 nanowires are synthesized through chemical vapor deposition where the nanowire yield and morphology are improved by creating rough surfaces on substrates. Vanadium doping leads to a dramatic decrease in Raman intensity without notable peak broadening, signifying the enhancement of electron correlation. The enhanced electron correlation is further evidenced by transport studies where the electrical resistivity is greatly increased and follows an unusual $\sqrt{T}$ dependence on the temperature (T). The lattice thermal conductivity is suppressed by an order of magnitude via doping even at room temperature where phonon-impurity scattering becomes less important. Density functional theory calculations suggest that the remarkable reduction of thermal conductivity arises from the complex phonon dispersion and reduced energy gap between phonon branches, which greatly enhances phase space for phonon–phonon Umklapp scattering. This work demonstrates a unique system combining 3d and 5d transition metals in isostructural materials to enrich the system with various types of interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electrical conductivity of multilayered Cu/Nb composites fabricated by accumulative roll bonding

The electrical conductivity of nanolayered copper/niobium composites fabricated using accumulative roll bonding was investigated as a function of layer thickness. Cu/Nb was used as a model system to evaluate the processing-structure–property relationship stemming from the accumulative roll bonding process. The physical properties were compared against samples of individual average layer heights ranging from 193 to 25 nm. The electrical resistivity was measured over a temperature range of ~3–300 K. Analysis on the role of interfaces on temperature dependence is conducted including the residual resistivity ratio and temperature coefficient of resistivity. It was found that electrical resistivity increases with decreasing layer height.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Explaining the extra crystal-field mode in 𝐴 ⁢Ce ⁢𝑋 2 (𝐴 = K, Rb, Na; 𝑋 = O, S, Se, Te)

A growing list of Ce-based magnets have shown an extra and heretofore unexplained crystal electric field (CEF) mode at high energies. We describe a process whereby an optical phonon can produce a split CEF mode well above the phonon energy. We use density functional theory and point-charge model calculations to estimate the phonon distortions and coupling to model this effect in KCeO 2 , showing that it accounts for the extra CEF mode observed. Furthermore, this mechanism is generic and may explain the extra modes observed on a variety of Ce 3+ compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High-frequency phonons drive large phonon-drag thermopower in semiconductors at high carrier density

It has been well established that (i) the thermopower of semiconductors can be enhanced through a phe- nomenon known as the drag effect, and (ii) the drag enhancement involves only low-frequency acoustic phonons and benefits from low electron densities and low temperatures. Using first-principles calculations we show that large drag enhancements to the thermopower are possible at high carrier density even at room temperature and arise from high-frequency acoustic phonons. A fascinating example is cubic boron arsenide (BAs) for which the calculated room temperature drag enhancement of the thermopower exceeds an order of magnitude at a high hole density of 10 21 cm –3 . This remarkable behavior stems from the simultaneously weak phonon-phonon and phonon-hole scattering of the high-frequency phonons in BAs that become drag active at high carrier densities through electron-phonon interactions. Furthermore, this work advances our understanding of coupled electron-phonon nanoscale transport and introduces an unexpected paradigm for achieving large thermopowers.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Extreme sensitivity of higher-order interatomic force constants and thermal conductivity to the energy surface roughness of exchange-correlation functionals

In this Letter, we report that the fourth-order interatomic force constants (4th-IFCs) are significantly sensitive to the energy surface roughness of exchange-correlation (XC) functionals in density functional theory calculations. This sensitivity, which is insignificant for the second- (2nd-) and third-order (3rd-) IFCs, varies for different functionals in different materials and can cause misprediction of thermal conductivity by several times of magnitude. As a result, when calculating the 4th-IFCs using the finite difference method, the atomic displacement needs to be taken large enough to overcome the energy surface roughness, in order to accurately predict phonon lifetime and thermal conductivity. We demonstrate this phenomenon on a benchmark material (Si), a high-thermal conductivity material (BAs), and a low thermal conductivity material (NaCl). For Si, we find that the LDA, PBE, and PBEsol XC functionals are all smooth to the 2nd- and 3rd-IFCs but all rough to the 4th-IFCs. This roughness can lead to a prediction of nearly one order of magnitude lower thermal conductivity. For BAs, all three functionals are smooth to the 2nd- and 3rd-IFCs, and only the PBEsol XC functional is rough for the 4th-IFCs, which leads to a 40% underestimation of thermal conductivity. For NaCl, all functionals are smooth to the 2nd- and 3rd-IFCs but rough to the 4th-IFCs, leading to a 70% underprediction of thermal conductivity at room temperature. In conclusion, with these observations, we provide general guidance on the calculation of 4th-IFCs for an accurate thermal conductivity prediction.

42 ENGINEERING↗
DOE OSTI2021

Theory of Plasmonic Hot-Carrier Generation and Relaxation

Hot-carrier (HC) generation from (localized) surface plasmon decay has recently attracted much attention due to its promising applications in physical, chemical, materials, and energy science. However, the detailed mechanisms of plasmonic HC generation, relaxation, and trapping are less studied. In this work, we developed and applied a quantum-mechanical model and coupled master equation method to study the generation of HCs from plasmon decay and their following relaxation processes with different mechanisms treated on equal footing. First, a quantum-mechanical model for HC generation is developed. Its connection to existing semiclassical models and time-dependent density functional theory (TDDFT) is discussed. Second, the relaxation and lifetimes of HCs are investigated in the presence of electron–electron and electron–phonon interactions. A GW-like approximation is introduced to account for the electron–electron scattering. The numerical simulations on the Jellium nanoparticles with a size up to 1.6 nm demonstrate the electron–electron scattering and electron–phonon scattering dominate different time scale in the relaxation dynamics. We also generalize the model to study the extraction of HCs to attached molecules. The quantum yield of extracting HCs for other applications is found to be size-dependent. In general, the smaller size of NP improves the quantum yield, which is in agreement with recent experimental measurements. Even though we demonstrate this newly developed theoretical formalism with Jellium model, the theory applies to any other atomistic models.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Neutron thermalization in nuclear graphite: A modern story of a classic moderator

Graphite has been of great interest since the dawn of the nuclear era. In this work, we will focus on the thermal neutron scattering of two types of nuclear graphite that have different microstructures, namely, the historic PGA which has a very anisotropic medium-grained needle coke, and the new G347A which is a near-isotropic fine-grained graphite. We report the results of room temperature inelastic neutron scattering measurements for the scattering function, double differential scattering cross-section, and phonon density of states. The obtained results are discussed in conjunction with results extracted from first-principles lattice dynamics simulations of crystalline graphite, using the incoherent approximation and by also including the coherent-one phonon contribution. Excellent agreements have been found between the measured and calculated scattering functions and phonon densities of states. The inclusion of the coherent-one phonon scattering shows a significant improvement of the calculated scattering functions, double differentials, and inelastic scattering cross-sections. We also highlight the physical concerns about the current thermal neutron scattering ENDF/B-VIII of nuclear graphite library and its corresponding phonon density of states. This work aims to provide a new presentation of neutron thermalization by graphite and offers a new set of high quality experimental and computational data for consideration.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

All-Inorganic Halide Perovskites as Potential Thermoelectric Materials: Dynamic Cation off-Centering Induces Ultralow Thermal Conductivity

Halide perovskites are anticipated to impact next generation high performance solar cells because of their extraordinary charge transport and optoelectronic properties. However, their thermal transport behavior has received limited attention. In this work, we studied the thermal transport and thermoelectric properties of the CsSnBr 3–x I x perovskites. We find a strong correlation between lattice dynamics and an ultralow thermal conductivity for series CsSnBr 3–x I x reaching 0.32 Wm –1 K –1 at 550 K. The CsSnBr 3–x I x also possess a decent Seebeck coefficient and controllable electrical transport properties. The crystallography data and theoretical calculations suggest the Cs atom deviates from its ideal cuboctahedral geometry imposed by the perovskite cage and behaves as a heavy atom rattling oscillator. This off-center tendency of Cs, together with the distortion of SnX 6 (X = Br or I) octahedra, produces a highly dynamic and disordered structure in CsSnBr 3–x I x , which gives rise to a very low Debye temperature and phonon velocity. Moreover, the low temperature heat capacity data suggests strong coupling between the low frequency optical phonons and heat carrying acoustical phonons. In conclusion, this induces strong phonon resonance scattering that induces the ultralow lattice thermal conductivity of CsSnBr 3–x I x .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Effects of aluminum content on thermoelectric performance of Al x CoCrFeNi high-entropy alloys

Introducing a non-regular distribution in the mass and bonding by including distinctly different elements can reduce the phonon transport even within structurally well-ordered materials. These distributions are a quality of all high-entropy alloys (HEAs), however the inclusion of aluminum in Al x CoCrFeNi is particularly impactful due to the large mismatch in atomic mass with other components. The resultant low phonon conductivity is a requirement for high thermoelectric performance, motivating the investigation of the effects of Al content on phonon transport as well as other thermoelectric properties. This work examines the phonon and electron transport and thermoelectric conversion properties with various Al contents (0 ≤ x Al ≤ 2) in this Cantor alloy using first-principles calculations, molecular dynamics, and semi-classical Boltzmann transport theory. The calculated phonon density of states and thermoelectric properties present reasonable agreements with experiments, including neutron scattering. A large reduction of phonon conductivity (k L ) is observed even with low x Al s, which we attribute to effective phonon scatterings by the large mass mismatch. However, its temperature dependence is not significant, demonstrating a minor contribution of interphonon scattering. In contrast, electrical conductivity (σ) and Seebeck coefficient (S) increase with temperature at higher x Al s with body-centered cubic structures. Therefore, the thermoelectric figure of merit (ZT) of Al x CoCrFeNi HEAs is enhanced by increasing the Al content mainly due to the increase of the thermoelectric power factor (σS 2 ) at high temperatures, while at low temperatures the phonon-scattering enhancement by mass mismatch is also important.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The importance of phonon spectrum measurements for accurate prediction of thermal scattering laws [Slides]

Although approximate phonon spectra (e.g. Debye model) are sufficient to reproduce integral quantities (e.g. total INS cross section) in reasonable agreement with the measured data, more accurate phonon spectra are needed to achieve agreement with the differential data. SANS component is essential for reproducing the total scattering cross section; this is the case for nanodiamonds and other materials where SANS components are present (such as porous materials like nuclear graphite). A format proposal for SANS data in ENDF or GNDS is needed. Therefore, differential (e.g. phonon spectrum) and integral (e.g. total cross section) measurements are necessary in the process of creating an ENDF evaluation. We have successfully developed a method by which ENDF evaluations can be directly compared to the relevant experimentally measured quantities. INS experiments at SNS, ILL, ISIS, and, in the future, ESS, as well as total cross section measurements at the VESUVIO instrument at ISIS, are accessible through user programs.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

In-plane thermal conductivity and the applicability of the Wiedemann–Franz law in dilute AlCu thin films

The Wiedemann–Franz (WF) law correlates heat and charge transport in metals. However, the validity of this correlation remains an open-ended question, especially in the context of inelastic scattering at room temperature. To address this gap in knowledge, we perform independent measurements of the in-plane thermal and electrical conductivities across four AlCu (0.5% Cu) films [thickness (⁠h⁠) ≈ 174, 98, 53, and 24 nm] using optical pump–probe metrologies and four-point probe techniques, respectively. For in-plane thermal conductivity measurements, we utilize time-domain thermoreflectance, in both concentric and beam-offset configurations, and the time-resolved magneto-optic Kerr effect. Our results show that the WF law overpredicts the thermal conductivity by at least ∼10% in all films, thus demonstrating modest deviations in predicted thermal conductivity when applying the WF law to dilute AlCu films. Using infrared variable angle spectroscopic ellipsometry, we demonstrate increased electron scattering rates in the thinnest film (⁠⁠h⁠ ≈ 24 nm), indicating electron-boundary scattering drives the reduction in in-plane thermal conductivity. Furthermore, this is generally an elastic scattering process, which is supported by our thermal conductivity measurements and analysis.

Electrical conductivity↗
DOE OSTI2021

Thermal Conductivity of β-Phase Ga 2 O 3 and (Al x Ga 1– x ) 2 O 3 Heteroepitaxial Thin Films

Heteroepitaxy of β-phase gallium oxide (β-Ga 2 O 3 ) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ($\bar{2}01$)-oriented β-Ga 2 O 3 heteroepitaxial thin films were investigated. Unintentionally doped β-Ga 2 O 3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0° and 6° toward $\langle$$11\bar{2}0$$\rangle$ via metal–organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the β-Ga 2 O 3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the β-Ga 2 O 3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick β-Ga 2 O 3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye–Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of β-Ga 2 O 3 films on 6° offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the β-Ga 2 O 3 films grown on 6° offcut sapphire exhibit a lower thermal boundary conductance at the β-Ga 2 O 3 /sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ($\bar{2}01$)-oriented β-(Al x Ga 1–x ) 2 O 3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the β-(Al x Ga 1–x ) 2 O 3 films exhibit lower thermal conductivities (2.8–4.7 W/m∙K) than the β-Ga 2 O 3 thin films. The dominance of the alloy disorder scattering in β-(Al x Ga 1–x ) 2 O 3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown β-phase Ga 2 O 3 and (Al x Ga 1–x ) 2 O 3 thin films and lays the groundwork for the thermal modeling and design of β-Ga 2 O 3 electronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of dynamic Jahn-Teller effect on magnetic excitations, lattice vibration, and thermal conductivity in U 𝑥 ⁢T⁢h 1−𝑥 ⁡O 2 system

Vibrational and magnetic properties of single-crystal uranium-thorium dioxide (U 𝑥 ⁢T⁢h 1−𝑥⁡ O 2 ) with a full range of 0 < 𝑥 < 1 are investigated. Thorium dioxide is a diamagnet whose thermal properties are governed by lattice vibration. The addition of paramagnetic uranium ions leads to the emergence of magnetic effects that alter the thermophysical properties noticeably even at room temperature. The interaction of phonons with magnetic moments of uranium 5⁢𝑓 electrons mediated by magnetoelastic coupling results in an anomalous low-temperature thermal conductivity profile. Analysis of the magnetic susceptibility measurements indicates a departure from the Curie-Weiss relationship characteristic of noninteracting paramagnetic ions, previously associated with the dynamic Jahn-Teller (DJT) effect characterized by coupling between spin and the oxygen sublattice. The T 2⁢g Raman peak position follows a nonlinear trend as a function of uranium concentration and hints that these Raman active optical modes play a role in either DJT or in mediating quadrupole-quadrupole interactions. A first-principle-based thermal transport model is implemented to explain the low-temperature transport measurements, where the anomalous reduction is attributed to phonon-spin resonant scattering. The interplay between spins and phonons is also captured using high-resolution inelastic x-ray scattering (IXS) measurements of phonon linewidths. Our results provide insights into the phonon interactions with the magnetic excitations governing DJT effect and impacting the low-temperature thermal transport processes in this material system. Furthermore, these findings have implications for understanding low-temperature thermal transport and magnetic properties in advanced materials for information processing and energy applications.

36 - MATERIALS SCIENCE↗
DOE OSTI2022

Phonons and phase symmetries in bulk CrCl 3 from scattering measurements and theory

Phonon-derived behaviors are important indicators of novel phenomena in transition metal trihalides, including spin liquid behavior, two-dimensional magnetism, and spin-lattice coupling. However, phonons and their dependence on spin structure and excitations have not been adequately explored. In this work, we probe and critically examine the vibrational properties of the prototype ferromagnetic honeycomb lattice material CrCl 3 using inelastic neutron scattering and density functional theory. We demonstrate that magnetic and van der Waals interactions are essential to describing the structure and phonons in CrCl 3 ; however, the specific spin configuration is unimportant. Further, this provides context for understanding thermal transport measurements as governed by dynamical spin-lattice couplings. More importantly, we introduce an efficient dynamic method that exploits translational symmetries in large conventional unit cells that generates insights into phonon dispersions, interactions, and measured spectra in terms of quantum phase interference conditions. This work opens new avenues for understanding phonons in layered magnets and more generally in conventional cell geometries of a variety of materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe

Although Ga doping can weaken the electron phonon coupling in n-type PbTe, Ga-doped PbTe has a relatively low carrier concentration (n) and high lattice thermal conductivity (κ lat ), resulting in a lower figure of merit (ZT) compared with those of other top-performing n-type PbTe-based thermoelectric materials. Herein, we report the extraordinary role of Zn in enhancing the thermoelectric performance of Ga-doped PbTe. It is discovered that Zn can simultaneously improve the electronic transport properties and decrease the κlat of Ga-doped PbTe, thereby affording a record high ZT avg ~ 1.26 at 400–873 K, with a maximum ZT value of 1.55 at 723 K. The isoelectronic substitution of Zn for Pb in Ga-doped PbTe increases the electrical conductivity and n by inducing the nucleation and growth of Ga 2 Te 3 in the second phase. The formation of Ga 2 Te 3 results in nonstoichiometry and Te deficiency in the PbTe matrix, which increases the number of electron carriers. Additionally, discordant Zn and Ga atoms with displacing off-center from the ideal octahedral positions, as well as Ga 2 Te 3 nanocrystals ranging from 30 to 200 nm coherently embedded into the PbTe matrix effectively weaken the phonon modes and scatter heat-carrying phonons, resulting in a significant reduction in κ lat .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Multiphonon excitations from dark matter scattering in crystals

For direct detection of sub-MeV dark matter, a promising strategy is to search for individual phonon excitations in a crystal. We perform an analytic calculation of the rate for light dark matter ( keV < m DM < MeV ) to produce two acoustic phonons through scattering in cubic crystals such as GaAs, Ge, Si, and diamond. The multiphonon rate is always smaller than the rate to produce a single optical phonon, whenever the latter is kinematically accessible. In Si and diamond, there is a dark matter mass range for which multiphonon production can be the most promising process, depending on the experimental threshold.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗