Search NASA⌕ Search

SEARCH · Search NASA

Results for “Photodiode arrays”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Kim, Q.↗

MCT Avalanche Photodiode Detector for Two-Micron Active Remote Sensing Applications

Mercury Cadmium Telluride electron initiated avalanche photodiodes demonstrated a breakthrough in lidar active remote sensing technology. A lidar detection system, based on an array of these devices, was integrated and characterized for 2-μm applications. Characterization experiments were focused on evaluating the dark current, gain and responsivity variations with bias voltage. Quantum efficiency and input dynamic range including noise-equivalent-power and maximum detectable power, were calculated from these results. Operating the detection system using four pixels at 77.6 K, 12 V bias resulted in a current responsivity of 615.8 A/W and a voltage responsivity of 1.45 GV/W. Minimum detectable power of 14 pW was obtained, which is equivalent to 5.7 fW/Hz(exp 1/2) noise-equivalent-power, indicating an average noise-equivalent-power of 1.4 fW/Hz(exp 1/2) per pixel. Work is in progress to integrate and validate this detection system using a newly developed triple-pulse integrated path differential absorption lidar for simultaneous and independent atmospheric measurements of water vapor and carbon dioxide.

Refaat, Tamer F.↗

CRUQS: A Miniature Fine Sun Sensor for Nanosatellites

A new miniature fine Sun sensor has been developed that uses a quadrant photodiode and housing to determine the Sun vector. Its size, mass, and power make it especially suited to small satellite applications, especially nanosatellites. Its accuracy is on the order of one arcminute, and it will enable new science in the area of nanosatellites. The motivation for this innovation was the need for high-performance Sun sensors in the nanosatellite category. The design idea comes out of the LISS (Lockheed Intermediate Sun Sensor) used by the sounding rocket program on their solar pointing ACS (Attitude Control System). This system uses photodiodes and a wall between them. The shadow cast by the Sun is used to determine the Sun angle. The new sensor takes this concept and miniaturizes it. A cruciform shaped housing and a surface-mount quadrant photodiode package allow for a two-axis fine Sun sensor to be packaged into a space approx.1.25xl x0.25 in. (approx.3.2x2.5x0.6 cm). The circuitry to read the photodiodes is a simple trans-impedance operational amplifier. This is much less complex than current small Sun sensors for nanosatellites that rely on photo-arrays and processing of images to determine the Sun center. The simplicity of the circuit allows for a low power draw as well. The sensor consists of housing with a cruciform machined in it. The cruciform walls are 0.5-mm thick and the center of the cruciform is situated over the center of the quadrant photodiode sensor. This allows for shadows to be cast on each of the four photodiodes based on the angle of the Sun. A simple operational amplifier circuit is used to read the output of the photodiodes as a voltage. The voltage output of each photodiode is summed based on rows and columns, and then the values of both rows or both columns are differenced and divided by the sum of the voltages for all four photodiodes. The value of both difference over sums for the rows and columns is compared to a table or a polynomial fit (depending on processor power and accuracy requirements) to determine the angle of the Sun in the sensor frame.

Heatwole, Scott↗

Synthetic modeling of soft x-ray emissivity for magnetic island analysis in LTX-β

We present a synthetic soft x-ray (SXR) forward-modeling framework that characterizes the emissivity structure of rotating magnetic islands in the Lithium Tokamak eXperiment-β across space and time. Magnetic islands associated with tearing modes produce modulations in line-integrated SXR brightness. Traditional tomographic methods struggle to resolve these structures in devices with limited sightlines, resulting in an under-determined inversion problem, or otherwise necessitate equilibrium reconstruction data, preventing their use in active control. Our approach removes this challenge by combining a fully three-dimensional ray-tracing model with a time-dependent emissivity prescription of a $m/n$ = 2/1 magnetic island. The model is validated through helical island geometry, rotation measured by magnetic diagnostics, and equilibrium constraints from PSI-Tri reconstructions. Synthetic brightness signals are generated for each photodiode sightline from a modeled emissivity profile and directly compared with experimental data from a tangential midplane SXR array. By fitting the synthetic diagnostic output to the observed brightness across time, we simultaneously infer key geometric parameters-such as island radial location, island width, and rotation frequency-without requiring full tomographic reconstruction, all with an average absolute deviation of less than 3%. This work demonstrates that forward modeling with a single tangential array can extract key island parameters in a spherical tokamak, providing a computationally efficient alternative to conventional SXR tomography and providing a pathway toward real-time magnetic-island characterization in future devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Photo sensor array technology development

The development of an improved capability photo sensor array imager for use in a Viking '75 type facsimile camera is presented. This imager consists of silicon photodiodes and lead sulfide detectors to cover a spectral range from 0.4 to 2.7 microns. An optical design specifying filter configurations and convergence angles is described. Three electronics design approaches: AC-chopped light, DC-dual detector, and DC-single detector, are investigated. Experimental and calculated results are compared whenever possible using breadboard testing and tolerance analysis techniques. Results show that any design used must be forgiving of the relative instability of lead sulfide detectors. A final design using lead sulfide detectors and associated electronics is implemented by fabrication of a hybrid prototype device. Test results of this device show a good agreement with calculated values.

Rossman, M. W.↗

Hand-Held Color Meters Based on Interference Filters

Small, inexpensive, hand-held optoelectronic color-measuring devices based on metal-film/dielectric-film interference filters are undergoing development. These color meters could be suitable for use in a variety of applications in which there are requirements to quantify or match colors for aesthetic purposes but there is no need for the high spectral resolution of scientific-grade spectrometers. Such applications typically occur in the paint, printing, and cosmetic industries, for example. The figure schematically depicts a color meter of this type being used to measure the color of a sample in terms of the spectrum of light reflected from the sample. Light from a white source (for example, a white light-emitting diode) passes through a collimating lens to the sample. Another lens collects some of the light reflected from the sample and focuses the light onto the input end of optical fiber. Light emerging from the output end of the optical fiber illuminates an array of photodetectors covered with metal/dielectric-film interference filters like those described in Metal/Dielectric-film Interference Color Filters (NPO-20217), NASA Tech Briefs, Vol. 23, No. 2 (February 1999), page 70. Typically, these are wide-band-pass filters, as shown at the bottom of the figure. The photodetector array need not be of any particular design: it could be something as simple as an assembly containing several photodiodes or something as elaborate as an active-pixel sensor or other imaging device. What is essential is that each of the photodetectors or each of several groups of photodetectors is covered with a metal/dielectric-film filter of a different color. In most applications, it would be desirable to have at least three different filters, each for a spectral band that contains one of the three primary additive red, green, and blue colors. In some applications, it may be necessary to have more than three different color filters in order to characterize subtle differences in color (or in the sensation of color) that cannot be characterized with sufficient precision by use of the primary colors alone.

Snyder, G. Jeffrey↗

Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K

The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.

Staller, C.↗

NASA Tech Briefs, November 2008

Topics covered include: Digital Phase Meter for a Laser Heterodyne Interferometer; Vision System Measures Motions of Robot and External Objects; Advanced Precipitation Radar Antenna to Measure Rainfall From Space; Wide-Band Radar for Measuring Thickness of Sea Ice; Vertical Isolation for Photodiodes in CMOS Imagers; Wide-Band Microwave Receivers Using Photonic Processing; L-Band Transmit/Receive Module for Phase-Stable Array Antennas; Microwave Power Combiner/Switch Utilizing a Faraday Rotator; Compact Low-Loss Planar Magic-T; Using Pipelined XNOR Logic to Reduce SEU Risks in State Machines; Quasi-Optical Transmission Line for 94-GHz Radar; Next Generation Flight Controller Trainer System; Converting from DDOR SASF to APF; Converting from CVF to AAF; Documenting AUTOGEN and APGEN Model Files; Sequence History Update Tool; Extraction and Analysis of Display Data; MRO DKF Post-Processing Tool; Rig Diagnostic Tools; MRO Sequence Checking Tool; Science Activity Planner for the MER Mission; UAVSAR Flight-Planning System; Templates for Deposition of Microscopic Pointed Structures; Adjustable Membrane Mirrors Incorporating G-Elastomers; Hall-Effect Thruster Utilizing Bismuth as Propellant; High-Temperature Crystal-Growth Cartridge Tubes Made by VPS; Quench Crucibles Reinforced with Metal; Deep-Sea Hydrothermal-Vent Sampler; Mars Rocket Propulsion System; Two-Stage Passive Vibration Isolator; Improved Thermal Design of a Compression Mold; Enhanced Pseudo-Waypoint Guidance for Spacecraft Maneuvers; Altimetry Using GPS-Reflection/Occultation Interferometry; Thermally Driven Josephson Effect; Perturbation Effects on a Supercritical C7H16/N2 Mixing Layer; Gold Nanoparticle Labels Amplify Ellipsometric Signals; Phase Matching of Diverse Modes in a WGM Resonator; WGM Resonators for Terahertz-to-Optical Frequency Conversion; Determining Concentration of Nanoparticles from Ellipsometry; Microwave-to-Optical Conversion in WGM Resonators; Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser; Low-Resolution Raman-Spectroscopy Combustion Thermometry; Temperature Sensors Based on WGM Optical Resonators; Varying the Divergence of Multiple Parallel Laser Beams; Efficient Algorithm for Rectangular Spiral Search; Algorithm-Based Fault Tolerance Integrated with Replication; Targeting and Localization for Mars Rover Operations; Terrain-Adaptive Navigation Architecture; Self-Adjusting Hash Tables for Embedded Flight Applications; Schema for Spacecraft-Command Dictionary; Combined GMSK Communications and PN Ranging; System-Level Integration of Mass Memory; Network-Attached Solid-State Recorder Architecture; Method of Cross-Linking Aerogels Using a One-Pot Reaction Scheme; An Efficient Reachability Analysis Algorithm.

Source record↗

Flexible Soft X-Ray Image Sensors based on Metal Halide Perovskites With High Quantum Efficiency

Soft X-ray imaging is a powerful tool to explore the structure of cells, probe material with nanometer resolution, and investigate the energetic phenomena in the universe. Conventional soft X-ray image sensors are by and large Si-based charge coupled devices that suffer from low frame rates, complex fabrication processes, mechanical inflexibility, and required cooling below -60 °C. Here, a soft X-ray photodiode is reported based on low-cost metal halide perovskite with comparable performance to commercial Si-based device. Nanothrough network electrode minimized the optical loss due to the shadowing of insensitive layers, while a multidimensional perovskite heterojunction is generated to reduce the photo-generated carrier loss. Further, this strategy promoted a record quantum efficiency of 8 × 10 3 % without cooling, several orders of magnitude greater than the previously achieved. Flexible and curved soft X-ray imaging arrays are fabricated based on this high-performance device structure, demonstrating stable soft X-ray response and sharp imaging capabilities. This work highlights the low-cost and efficient perovskite photodiode as a strong candidate for the next-generation soft X-ray image sensors.

36 MATERIALS SCIENCE↗

Infrared Detector Activities at NASA Langley Research Center

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

Abedin, M. N.↗

The four- and five-band multispectral scanners for Landsat

The earth resources sensing Multispectral Scanner (MSS) for the Landsat satellite has two versions; one with four spectral bands from 0.5 to 1.1 microns, and one with five bands, the added band being 10.4 to 12.6 microns. This paper describes optical design and performance. The instrument uses a flat, object-space scanning mirror of near-linear motion, with a sensitive optical position monitor to detect mirror angular position. The 22.9-cm aperture telescope images the scene on an array of fiber optics, which dissect and transmit the scene energy to photomultiplier tubes detecting in Bands 1, 2, and 3, and silicon photodiodes detecting Band 4. Band 5 energy passes the fiber optic assembly and is reimaged on a radiatively cooled mercury cadmium telluride (HgCdTe) detector. The orbiting four-band scanner is furnishing data registered to better than 50-m band-to-band and resolving 80-m repetitive pattern over a 185-km swath width from 907-km altitude.

Lansing, J. C., Jr.↗

Molecular-Beam Epitaxy Of IrSi3

Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

Lin, True-Lon↗

Synchronous Photodiode-Signal Sampler

Synchronous sampling circuit increases signal-to-noise ratio of measurements of chopped signal of known phase and frequency in presence of low-frequency or dc background noise. Used with linear array of photoelectric sensors for locating edge of metal plate. Multiplexing circuit cycles through 16 light-emitting-diode/photodiode pairs, under computer control. Synchronized with multiplexer so edge detector makes one background-subtracted signal measurement per emitter/detector pair in turn.

Primus, Howard K.↗

Progress in CMOS Active Pixel Image Sensors

Recent research results regarding the investigation of CMOS active pixel image sensors (APS) are reported. An investigation of various designs for the pixel, including photogate devices of various geometries and photodiode devices has been performed. Opto-electronic performance including intra-pixel photoresponse maps taken using a focused laser scanning apparatus are presented. Several imaging arrays have also been investigated. A 128 x 128 image sensor has been fabricated and characterized. Both p-well and n-well implementations have been explored. The demonstrated arrays use 2 micron CMOS design rules and have a 40 x 40 micron pixel pitch.

active↗

A profile monitor for proton radiography experiments at the Los Alamos Neutron Science Center

The Proton Radiography (pRad) facility at the Los Alamos Neutron Science Center utilizes pulses of protons delivered by the 800 MeV linear accelerator to produce a series of radiographic images to study the dynamic behavior of materials under extreme conditions. Radiographs taken with an empty field of view, or beam pictures, are used to normalize transmission. However, because the center of the proton beam shifts between pulses, an in situ method for measuring beam position is required to normalize images for beam movement to perform absolute radiography. The beam profile monitor described here uses an array of scintillating fibers positioned in the beam path to produce light proportional to beam intensity across the beam cross section. This light is detected using fast photodiodes and a digital oscilloscope, providing a response time of several nanoseconds—suitable for measuring the 50-ns proton pulses used in pRad. The profile monitor achieves a measured position precision of 40 μm and an intensity precision of 0.7%, allowing for beam movement corrections to be applied to images, thereby improving data accuracy and image quality.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Development of an image converter of radical design

A long term investigation of thin film sensors, monolithic photo-field effect transistors, and epitaxially diffused phototransistors and photodiodes to meet requirements to produce acceptable all solid state, electronically scanned imaging system, led to the production of an advanced engineering model camera which employs a 200,000 element phototransistor array (organized in a matrix of 400 rows by 500 columns) to secure resolution comparable to commercial television. The full investigation is described for the period July 1962 through July 1972, and covers the following broad topics in detail: (1) sensor monoliths; (2) fabrication technology; (3) functional theory; (4) system methodology; and (5) deployment profile. A summary of the work and conclusions are given, along with extensive schematic diagrams of the final solid state imaging system product.

Irwin, E. L.↗

Operational Characteristics and Plasma Measurements in a Low-Energy FARAD Thruster

Pulsed inductive plasma accelerators are spacecraft propulsion devices in which energy is stored in a capacitor and then discharged through an inductive coil. The device is electrodeless, inducing a plasma current sheet in propellant located near the face of the coil. The propellant is accelerated and expelled at a high exhaust velocity (order of 10 km/s) through the interaction of the plasma current with an induced magnetic field. The Faraday Accelerator with RF-Assisted Discharge (FARAD) thruster is a type of pulsed inductive plasma accelerator in which the plasma is preionized by a mechanism separate from that used to form the current sheet and accelerate the gas. Employing a separate preionization mechanism in this manner allows for the formation of an inductive current sheet at much lower discharge energies and voltages than those found in previous pulsed inductive accelerators like the Pulsed Inductive Thruster (PIT). In this paper, we present measurements aimed at quantifying the thruster's overall operational characteristics and providing additional insight into the nature of operation. Measurements of the terminal current and voltage characteristics during the pulse help quantify the output of the pulsed power train driving the acceleration coil. A fast ionization gauge is used to measure the evolution of the neutral gas distribution in the accelerator prior to a pulse. The preionization process is diagnosed by monitoring light emission from the gas using a photodiode, and a time-resolved global view of the evolving, accelerating current sheet is obtained using a fast-framing camera. Local plasma and field measurements are obtained using an array of intrusive probes. The local induced magnetic field and azimuthal current density are measured using B-dot probes and mini-Rogowski coils, respectively. Direct probing of the number density and electron temperature is performed using a triple probe.

Polzin, K. A.↗

Photodiode-Coupled Light Modulator

Absorption of one light beam controls transmission of another. High-performance monolithic light modulator comprised of p-doped/intrinsic/n-doped (PIN) GaAs photodiode grown directly over InAs/GaAs PIN multiple-quantum-well (MQW) diode. Photodiode-coupled multiple-quantum-well modulator includes advanced semi-conductor microstructures enhancing electro-optical properties. Using standard lithographic and etching techniques for defining picture elements, structures fabricated into two-dimensional arrays for use as spatial light modulators.

Maserjian, Joseph↗