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204 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Fast Offset Laser Phase-Locking System

Figure 1 shows a simplified block diagram of an improved optoelectronic system for locking the phase of one laser to that of another laser with an adjustable offset frequency specified by the user. In comparison with prior systems, this system exhibits higher performance (including higher stability) and is much easier to use. The system is based on a field-programmable gate array (FPGA) and operates almost entirely digitally; hence, it is easily adaptable to many different systems. The system achieves phase stability of less than a microcycle. It was developed to satisfy the phase-stability requirement for a planned spaceborne gravitational-wave-detecting heterodyne laser interferometer (LISA). The system has potential terrestrial utility in communications, lidar, and other applications. The present system includes a fast phasemeter that is a companion to the microcycle-accurate one described in High-Accuracy, High-Dynamic-Range Phase-Measurement System (NPO-41927), NASA Tech Briefs, Vol. 31, No. 6 (June 2007), page 22. In the present system (as in the previously reported one), beams from the two lasers (here denoted the master and slave lasers) interfere on a photodiode. The heterodyne photodiode output is digitized and fed to the fast phasemeter, which produces suitably conditioned, low-latency analog control signals which lock the phase of the slave laser to that of the master laser. These control signals are used to drive a thermal and a piezoelectric transducer that adjust the frequency and phase of the slave-laser output. The output of the photodiode is a heterodyne signal at the difference between the frequencies of the two lasers. (The difference is currently required to be less than 20 MHz due to the Nyquist limit of the current sampling rate. We foresee few problems in doubling this limit using current equipment.) Within the phasemeter, the photodiode-output signal is digitized to 15 bits at a sampling frequency of 40 MHz by use of the same analog-to-digital converter (ADC) as that of the previously reported phasemeter. The ADC output is passed to the FPGA, wherein the signal is demodulated using a digitally generated oscillator signal at the offset locking frequency specified by the user. The demodulated signal is low-pass filtered, decimated to a sample rate of 1 MHz, then filtered again. The decimated and filtered signal is converted to an analog output by a 1 MHz, 16-bit digital-to-analog converters. After a simple low-pass filter, these analog signals drive the thermal and piezoelectric transducers of the laser.

Shaddock, Daniel↗
NASA NTRS2016

Detectors and Focal Plane Modules for Weather Instruments

Weather satellite instruments require detectors with a variety of wavelengths ranging from the visible to VLWIR. The Cross-track infrared Sounder (CrIS) is a Polar Orbiting interferometric sensor that measures earth radiances at high spectral resolution, using the data to provide pressure, temperature and moisture profiles of the atmosphere. The pressure, temperature and moisture sounding data are used in weather prediction models that track storms, predict levels of precipitation etc. The CrIS instrument contains SWIR (lambda(sub c) (is) approximately 5 micrometers at 98 K), MWIR (lambda(sub c) (is) approximately 9 micrometers at 98 K) and LWIRs (lambda(sub c) (is) approximately 15.4 m at 81 K) bands in three Focal Plane Array Assemblies (FPAAs). CrIS detectors are 850 micrometers diameter detectors with each FPAA consisting of nine photovoltaic detectors arranged in a 3 x 3 pattern. Molecular beam epitaxy (MBE)-grown Hg1-xCdxTe material are used for the detectors fabricated in a modified Double Layer Planar Heterostructure (DLPH) architecture. Each detector has an accompanying cold preamplifier. SWIR and MWIR FPAAs operate at 98 K and the LWIR FPAA at 81 K, permitting the use of passive radiators to cool the detectors. D* requirements at peak 14.01 micrometers wavelength are greater than 5.0E+10 Jones for LWIR, greater than 7.5E+10 Jones at 8.26 micrometers for MWIR and greater than 3.0E+11 Jones at peak 4.64 micrometers wavelength for SWIR. All FPAAs exceeded the D* requirements. Measured mean values for the nine photodiodes in each of the LWIR, MWIR and SWIR FPAAs are D* = 5.3 x 10(exp 10) cm-Hz1/2/W at 14.0 micrometers, 9.6 x 10(exp 10) cm-Hz1/2/W at 8.0 micrometers and 3.4 x 10(exp 11) cm-Hz1/2/W at 4.64 micrometers.

satellite instruments↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗
NASA NTRS2011

Temperature-Sensitive Coating Sensor Based on Hematite

A temperature-sensitive coating, based on hematite (iron III oxide), has been developed to measure surface temperature using spectral techniques. The hematite powder is added to a binder that allows the mixture to be painted on the surface of a test specimen. The coating dynamically changes its relative spectral makeup or color with changes in temperature. The color changes from a reddish-brown appearance at room temperature (25 C) to a black-gray appearance at temperatures around 600 C. The color change is reversible and repeatable with temperature cycling from low to high and back to low temperatures. Detection of the spectral changes can be recorded by different sensors, including spectrometers, photodiodes, and cameras. Using a-priori information obtained through calibration experiments in known thermal environments, the color change can then be calibrated to yield accurate quantitative temperature information. Temperature information can be obtained at a point, or over an entire surface, depending on the type of equipment used for data acquisition. Because this innovation uses spectrophotometry principles of operation, rather than the current methods, which use photoluminescence principles, white light can be used for illumination rather than high-intensity short wavelength excitation. The generation of high-intensity white (or potentially filtered long wavelength light) is much easier, and is used more prevalently for photography and video technologies. In outdoor tests, the Sun can be used for short durations as an illumination source as long as the amplitude remains relatively constant. The reflected light is also much higher in intensity than the emitted light from the inefficient current methods. Having a much brighter surface allows a wider array of detection schemes and devices. Because color change is the principle of operation, the development of high-quality, lower-cost digital cameras can be used for detection, as opposed to the high-cost imagers needed for intensity measurements with the current methods. Alternative methods of detection are possible to increase the measurement sensitivity. For example, a monochrome camera can be used with an appropriate filter and a radiometric measurement of normalized intensity change that is proportional to the change coating temperature. Using different spectral regions yields different sensitivities and calibration curves for converting intensity change to temperature units. Alternatively, using a color camera, a ratio of the standard red, green, and blue outputs can be used as a self-referenced change. The blue region (less than 500 nm) does not change nearly as much as the red region (greater than 575 nm), so a ratio of color intensities will yield a calibrated temperature image. The new temperature sensor coating is easy to apply, is inexpensive, can contour complex shape surfaces, and can be a global surface measurement system based on spectrophotometry. The color change, or relative intensity change, at different colors makes the optical detection under white light illumination, and associated interpretation, much easier to measure and interpret than in the detection systems of the current methods.

Bencic, Timothy J.↗
NASA NTRS2002

Subsystem Imaging Performance and Modeling of the Infrared Multi-Object Spectrograph

The Infrared Multi-Object Spectrograph (IRMOS) is a facility instrument for the Kitt Peak National Observatory Mayall Telescope (3.8 meter). IRMOS is a near-IR (0.8 - 2.5 micron) spectrograph with low to mid resolution (R=lambda/delta, lambda = 300 - 3800). The IRMOS spectrograph produces simultaneous spectra of - 100 objects in its 2.8 x 2.0 arc-min field of view using a commercial MEMS multi-mirror array device (MMA). The IRMOS optical design consists of two imaging systems, or "stages." The focal reducer, stage one, images the focal plane of the telescope onto the MMA. The spectrograph, stage two, images the MMA onto the detector. We describe the breadboard alignment method and imaging and scattered light performance for both the focal reducer and spectrograph. This testing provides verification of the optomechanical alignment method, and a measurement of the contribution of scattered light in the system due to mirror small scale surface error. After the stage I and 2 optics are integrated with the instrument, our test results will make it possible to distinguish between scattered light from the mirrors and the MMA. Image testing will be done at four wavelengths in the visible and near-IR. A mercury-argon pencil lamp will provide spectral lines at 546.1 and 1012 nm, and a blackbody radiation source lines at 1600 and 2200 nm. A CCD camera will be used as a detector for the visible wavelengths, and an IR photodiode will be used for the IR wavelengths. We compare our data with a theoretical analysis using a commercial software package. Mirror surface error is modeled by treating each surface as a superposition of various gratings (e.g., diamond turning tool marks, features due to the impurities of Al 6061, and periodic mid-frequency errors due to drift during machining).

Connelly, Joseph A.↗
NASA NTRS2016

Detectors and Focal Plane Modules for Weather Satellites

Weather satellite instruments require detectors with a variety of wavelengths ranging from the visible to VLWIR. One of the remote sensing applications is the geostationary GOES-ABI imager covering wavelengths from the 450 to 490 nm band through the 13.0 to 13.6 micron band. There are a total of 16 spectral bands covered. The Cross-track infrared Sounder (CrIS) is a Polar Orbiting interferometric sensor that measures earth radiances at high spectral resolution, using the data to provide pressure, temperature and moisture profiles of the atmosphere. The pressure, temperature and moisture sounding data are used in weather prediction models that track storms, predict levels of precipitation etc. The CrIS instrument contains SWIR (lamba(sub c) approximately 5 micron at 98K), MWIR (lambda(sub c) approximately 9 micron at 98K) and LWIRs (lamba(sub c) approximately 15.5 micron at 81K) bands in three Focal Plane Array Assemblies (FPAAs). GOES-ABI contains three focal plane modules (FPMs), (i) a visible-near infrared module consisting of three visible and three near infrared channels, (ii) a MWIR module comprised of five channels from 3.9 micron to 8.6 micron and (iii) a 9.6 micron to 13.3 micron, five-channel LWIR module. The VNIR FPM operates at 205 K, and the MWIR and LWIR FPMs operate at 60 K. Each spectral channel has a redundant array built into a single detector chip. Switching is thus permitted from the primary selected array in each channel to the redundant array, given any degradation in performance of the primary array during the course of the mission. Silicon p-i-n detectors are used for the 0.47 micron to 0.86 micron channels. The thirteen channels above 1 micron are fabricated in various compositions of Hg1-xCdxTe, and in this particular case using two different detector architectures. The 1.38 micron to 9.61 micron channels are all fabricated in Hg1-xCdxTe grown by Liquid Phase Epitaxy (LPE) using the HDVIP detector architecture. Molecular beam epitaxy (MBE)-grown Hg1-xCdxTe material are used for the LWIR 10.35 micron to 13.3 micron channels fabricated in Double layer planar heterostructure (DLPH) detectors. This is the same architecture used for the CrIS detectors CrIS detectors are 850 micron diameter detectors with each FPAA consisting of nine photovoltaic detectors arranged in a 3 x 3 pattern. Each detector has an accompanying cold preamplifier. SWIR and MWIR FPAAs operate at 98 K and the LWIR FPAA at 81 K, permitting the use of passive radiators to cool the detectors. D* requirements at peak wavelength are ≥ 5.0E+10 Jones for LWIR, ≥ 9.3E+10 Jones for MWIR and ≥ 3.0E+11 Jones for SWIR. All FPAAs exceeded the D* requirements. Measured mean values for the nine photodiodes in each of the LWIR, MWIR and SWIR FPAAs are D* = 5.3 x 10(exp 10) cm-Hz(exp 1/2)/W at 14.0 micron, 1.0 x 10(exp 11) cm-Hz(exp 1/2)/W at 8.0 micron and 3.1 x 10(exp 11) cm-Hz(exp 1/2)/W at 4.64 micron.

satellite instruments↗