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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Development of a Light-Trapping, Planar-Cavity Receiver for Enclosed Solar Particle Heating

Concentrating solar thermal power (CSP) technology development has recently focused on high efficiency power cycles and chemical reactions that require high operating temperatures. An increase in receiver operating temperatures relative to current commercial CSP technology is necessary to support more efficient, high temperature power cycles or thermochemical processes. Solar receivers operating with heat transfer media temperatures >700 degrees C face various challenges including thermal performance, scalability, thermal-mechanical issues, and receiver service life. In addition, heat transfer media selection for high-temperature processes has been moving towards inert solid particles in Gen3 CSP, and reactive solid media and/or gases in solar thermochemical processes. To overcome the shortcomings and limitations of conventional designs for molten salt or particle receivers and receiver reactors, we introduce a unique light-trapping, planar cavity receiver (LTPCR) configuration and will present the current development progresses to demonstrate receiver feasibility through modeling, testing, and prototype demonstration.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2026

Machine Learning for Multipactor Susceptibility Prediction in Planar RF Gaps

Multipactor discharge is a nonlinear electron avalanche that limits the performance of high-power radio-frequency (RF) and vacuum electronic devices. Predicting multipactor susceptibility traditionally relies on Monte Carlo or particle-in-cell (PIC) simulations, which become computationally expensive for large parametric studies. In this work, we present a supervised machine-learning (ML) framework for prediction of multipactor susceptibility in a two-surface planar geometry. The models are trained using high-fidelity PIC simulation generated susceptibility data and learn the relationship between operational parameters, geometry, and material-dependent secondary electron emission properties. The proposed approach enables rapid reconstruction of susceptibility charts while preserving the physical structure of multipactor growth regions.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Machine Learning for Predicting Multipactor Susceptibility in Planar RF Structures

Multipactor discharge is a persistent challenge in high-power microwave (HPM) and accelerator systems, where secondary electron avalanches can cause heating, vacuum degradation, and failure. This work presents the first supervised machine learning (ML) framework for multipactor prediction, trained on high-fidelity 3D Particle-in-Cell (PIC) simulation data in planar geometries. The model maps operational, geometric, and material-dependent secondary electron yield (SEY) parameters to the time-averaged electron growth rate, enabling rapid reconstruction of susceptibility charts. Among the models evaluated, tree-based ensemble methods such as Random Forest and Extra Trees demonstrate superior generalization to unseen materials compared to neural networks such as multilayer perceptron (MLP). Performance metrics, including Intersection over Union (IoU), Structural Similarity Index Measure (SSIM), and Pearson correlation, show close agreement with simulation benchmarks. Principal Component Analysis attributes generalization limits to material feature-space disjointedness.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Electronic coupling in square planar La 4 Ni 3 O 8

A study of a dd excitation in La4Ni 3 O 8 (La-438) using x-ray absorption scattering (XAS) and resonant inelastic x-ray scattering (RIXS) at the Ni K-edge is presented here. The incident energy dependence of this dd excitation shows a maximum at the 1s→4p π transition. Its intensity at the main edge is proportional to the amount of incident x-ray polarization parallel to the c-axis. These observations suggest that the RIXS process underlying this excitation includes a strong Ni 3d-Ni 4p Coulomb interaction and excludes the “4p-as-spectator” approximation. The dominant Ni 3d Coulomb interaction is with Ni 4p π with limited or no interaction with the Ni 4p σ . An insulating gap closing is observed as a function of temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Breaking Radial Dipole Symmetry in Planar Macrocycles Modulates Edge‐to‐Edge Packing and Disrupts Cofacial Stacking

Dipolar interactions are ever-present in supramolecular architectures, though their impact is typically revealed by making dipoles stronger. While it is also possible to assess the role of dipoles by altering their orientations by using synthetic design, doing so without altering the molecular shape is not straightforward. We have now done this by flipping one triazole unit in a rigid macrocycle, tricarb. The macrocycle is composed of three carbazoles (2 Debye) and three triazoles (5 Debye) defining an array of dipoles aligned radially but organized alternately in and out. These dipoles are believed to dictate edge-to-edge tiling and face-to-face stacking. We modified our synthesis to prepare isosteric macrocycles with the orientation of one triazole dipole rotated 40°. The new dipole orientation guides edge-to-edge contacts to reorder the stability of two surface-bound 2D polymorphs. The impact on dipole-enhanced π stacking, however, was unexpected. Our stacking model identified an unchanged set of short-range (3.4 Å) anti-parallel dipole contacts. Despite this situation, the reduction in self-association was attributed to long-range (~6.4 Å) dipolar repulsions between π-stacked macrocycles. This work highlights our ability to control the build-up and symmetry of macrocyclic skeletons by synthetic design, and the work needed to further our understanding of how dipoles control self-assembly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Non-perturbative geometries for planar $ \mathcal{N} $ = 4 SYM amplitudes

There is a remarkable well-known connection between the G(4, n) cluster algebra and n-particle amplitudes in $ \mathcal{N} $ = 4 SYM theory. For n ≥ 8 two long-standing open questions have been to find a mathematically natural way to identify a finite list of amplitude symbol letters from among the infinitely many cluster variables, and to find an explanation for certain algebraic functions, such as the square roots of four-mass-box type, that are expected to appear in symbols but are not cluster variables. In this letter we use the notion of “stringy canonical forms” to construct polytopal realizations of certain compactifications of (the positive part of) the configuration space Conf n (P k–1 ) ≅ G(k, n)/T that are manifestly finite for all k and n. Some facets of these polytopes are naturally associated to cluster variables, while others are naturally associated to algebraic functions constructed from Lusztig’s canonical basis. For (k, n) = (4, 8) the latter include precisely the expected square roots, revealing them to be related to certain “overpositive” functions of the kinematical invariants.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Cascade of phase transitions in a planar Dirac material

Here we investigate a model of interacting Dirac fermions in 2 + 1 dimensions with M flavors and N colors having the U(M)×SU(N ) symmetry. In the large-N limit, we find that the U(M) symmetry is spontaneously broken in a variety of ways. In the vacuum, when the parity-breaking flavor-singlet mass is varied, the ground state undergoes a sequence of M first-order phase transitions, experiencing M + 1 phases characterized by symmetry breaking U(M)→U(M – k)×U(k) with k ϵ {0, 1, 2, · · · , M}, bearing a close resemblance to the vacuum structure of three-dimensional QCD. At finite temperature and chemical potential, a rich phase diagram with first and second-order phase transitions and tricritical points is observed. Also exotic phases with spontaneous symmetry breaking of the form as U(3)→U(1) 3 , U(4)→U(2)×U(1) 2 , and U(5)→U(2)2×U(1) exist. For a large flavor-singlet mass, the increase of the chemical potential μ brings about M consecutive first-order transitions that separate the low-μ phase diagram with vanishing fermion density from the high-μ region with a high fermion density.

1/N expansion↗
DOE OSTI2021

On the planar limit of 3d $$ {\mathrm{T}}_{\rho}^{\sigma}\left[\mathrm{SU}\left(\mathrm{N}\right)\right] $$

A bstract We discuss a limit of 3d $$ {T}_{\rho}^{\sigma}\left[\mathrm{SU}(N)\right] $$ T ρ σ SU N quiver gauge theories in which the number of nodes is large and the ranks scale quadratically with the length of the quiver. The sphere free energies and topologically twisted indices are obtained using supersymmetric localization. Both scale quartically with the length of the quiver and quadratically with N , with trilogarithm functions depending on the quiver data as coefficients. The IR SCFTs have well-behaved supergravity duals in Type IIB, and the free energies match precisely with holographic results. Previously discussed theories with N 2 ln N scaling arise as limiting cases. Each balanced 3d quiver theory is linked to a 5d parent, whose matrix model is related and dominated by the same saddle point, leading to close relations between BPS observables.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Coincidence measurements of radioxenon using passive implemented planar silicon (PIPS) detector

The Comprehensive Test Ban Treaty (CTBT) bans nuclear weapons testing and establishes the International Monitoring System (IMS) for the purpose of treaty verification. IMS is a detector network that confirms that global nuclear activity is peaceful in nature. These detector systems use β-γcoincidence measurements to characterize atmospheric samples containing radioxenon isotopes. The goal of this work is to use the system consisting of two sodium iodide detectors and two PIPSbox detectors to characterize isotopically pure samples of 131m Xe, 133m Xe, 133 Xe, and 135 Xe via β, γ, and β-γ coincidence measurements.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2024

Planar slicing for nonextrusion AM processes

Extrusion-based AM processes, including material extrusion and directed energy deposition, construct objects by continuously depositing a relatively small amount of molten feedstock to a specific location. Nonextrusion AM processes, on the other hand, tend to form each layer by linearly or areally projecting either energy onto a vat of photocurable liquid or a binding agent into a bed of loose powder. Such systems vary significantly from extrusion-based AM processes but do share similarities. The general approach to path planning is the same, but nonextrusion processes typically favor the use of bitmap representations, instead of polygons, for pathing computation and do not use a g-code file to command the printer. In this chapter, a high-level discussion of these differences will be covered.

Macdonald, Eric↗
DOE OSTI2021

Mixed Tin-Titanium Oxides by Atomic Layer Deposition on Planar Substrates: Physical and Electronic Structure

Ternary atomic layer deposition of Sn-doped TiO x (Sn:TiO x ) and Ti-doped SnO x (Ti:SnO x ) was performed using tetrakisdimethylamidotitanium (IV) and tin(IV) with water at 150 °C on (1 0 0) Si and quartz substrates. The physical structure of the films was investigated using scanning electron, atomic force, and Kelvin probe force microscopies as well as spectroscopic ellipsometry, Raman spectroscopy, and X-ray diffraction. All as-deposited films are amorphous and possessed flat and conformal topographies with low surface roughness (<1 nm). Annealed Sn:TiO x and Ti:SnO x crystallize into the tetragonal anatase TiO 2 and cassiterite SnO 2 structures, respectively, without large variations to the film topography. The chemical composition of the as-deposited and annealed films was investigated through X-ray photoelectron spectroscopy. While dopants are homogenously mixed, the ternary ALD to form Sn:TiO x and Ti:SnO x surprisingly does not follow the rule of mixtures, despite similarities in both the growth rates of binary SnO x and TiO x and the precursors used. This finding is also supported by spectroscopic ellipsometry. Here, we postulate the deviation from the rule of mixtures is due to non-ideal surface chemistry of the binary ALD of SnO x . The optical bandgap of all films was quantified by the Tauc analysis and the valence band position was investigated by valence band X-ray photoelectron spectroscopy. Intra-bandgap states above the valence band maximum were observed for as-deposited Ti:SnO x and Sn:TiO x and ascribed to 5 s states from Sn 2+ ions. The presence of these intra-bandgap states induces enhanced visible absorption and bathochromic shifts to the apparent bandgap for all as-deposited films. Annealing the films removes the intra-bandgap states and increases the optical bandgap. Simplified band diagrams created using the data available demonstrated that the conduction and valence band positions did not vary between the positions of pure TiO 2 or SnO 2 with monotonic increases to the dopant incorporation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Scaled boundary cubature scheme for numerical integration over planar regions with affine and curved boundaries

This paper introduces the scaled boundary cubature (SBC) scheme for accurate and efficient integration of functions over polygons and two-dimensional regions bounded by parametric curves. Over two-dimensional domains, the SBC method reduces integration over a region bounded by m curves to integration over m regions (referred to as curved triangular regions), where each region is bounded by two line segments and a curve. With proper (counterclockwise) orientation of the boundary curves, the scheme is applicable to convex and nonconvex domains. Additionally, for star-convex domains, a tensor-product cubature rule with positive weights and integration points in the interior of the domain is obtained. If the integrand is homogeneous, we show that this new method reduces to the homogeneous numerical integration scheme; however, the SBC scheme is more versatile since it is equally applicable to both homogeneous and non-homogeneous functions. This paper also introduces several methods for smoothing integrands with point singularities and near-singularities. When these methods are used, highly efficient integration of weakly singular functions is realized. Finally, the SBC method is applied to a number of benchmark problems, which reveal its broad applicability and superior performance (in terms of time to generate a rule and accuracy per cubature point) when compared to existing methods for integration.

42 ENGINEERING↗
DOE OSTI2020

The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures

We present a detailed study of 7-nm thick Al layers epitaxially grown on In x Al 1-x As or Al 1-x Ga x Sb y As 1-y (0 0 1) semiconductors using high-resolution transmission electron microscopy (HRTEM) and synchrotron X-ray diffraction (XRD). These techniques provide high spatial and high reciprocal space resolution information about Al lattice orientations and interfacial structure, highlighting the existence of a strong correlation between the surface lattice parameter of the semiconductor and the normal orientation of the aluminum film. The normal orientation of Al layers is found to be [1 1 1] when the in-plane semiconductor surface lattice parameter, a S , is smaller than 5.98 Å, and is [1 1 0] when aS is larger than this value. In the transition between these lattice parameters where one orientation is preferred, both orientations may be observed. Concomitant with the change in normal orientation is an inversion in the strain state of the aluminum film. When the normal orientation is [1 1 1], the Al film is compressively strained; while for [1 1 0] normal orientations, the Al in-plane strain is tensile. An energy balance model, accounting for surface, interfacial, side-face, and strain energy, and the registry of lattice planes across the semiconductor/aluminum interface provide explanations for the observed normal orientation and strain inversion.

36 MATERIALS SCIENCE↗