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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Radar Range Sidelobe Reduction Using Adaptive Pulse Compression Technique

Pulse compression has been widely used in radars so that low-power, long RF pulses can be transmitted, rather than a highpower short pulse. Pulse compression radars offer a number of advantages over high-power short pulsed radars, such as no need of high-power RF circuitry, no need of high-voltage electronics, compact size and light weight, better range resolution, and better reliability. However, range sidelobe associated with pulse compression has prevented the use of this technique on spaceborne radars since surface returns detected by range sidelobes may mask the returns from a nearby weak cloud or precipitation particles. Research on adaptive pulse compression was carried out utilizing a field-programmable gate array (FPGA) waveform generation board and a radar transceiver simulator. The results have shown significant improvements in pulse compression sidelobe performance. Microwave and millimeter-wave radars present many technological challenges for Earth and planetary science applications. The traditional tube-based radars use high-voltage power supply/modulators and high-power RF transmitters; therefore, these radars usually have large size, heavy weight, and reliability issues for space and airborne platforms. Pulse compression technology has provided a path toward meeting many of these radar challenges. Recent advances in digital waveform generation, digital receivers, and solid-state power amplifiers have opened a new era for applying pulse compression to the development of compact and high-performance airborne and spaceborne remote sensing radars. The primary objective of this innovative effort is to develop and test a new pulse compression technique to achieve ultrarange sidelobes so that this technique can be applied to spaceborne, airborne, and ground-based remote sensing radars to meet future science requirements. By using digital waveform generation, digital receiver, and solid-state power amplifier technologies, this improved pulse compression technique could bring significant impact on future radar development. The novel feature of this innovation is the non-linear FM (NLFM) waveform design. The traditional linear FM has the limit (-20 log BT -3 dB) for achieving ultra-low-range sidelobe in pulse compression. For this study, a different combination of 20- or 40-microsecond chirp pulse width and 2- or 4-MHz chirp bandwidth was used. These are typical operational parameters for airborne or spaceborne weather radars. The NLFM waveform design was then implemented on a FPGA board to generate a real chirp signal, which was then sent to the radar transceiver simulator. The final results have shown significant improvement on sidelobe performance compared to that obtained using a traditional linear FM chirp.

Li, Lihua↗
NASA NTRS1986

Monitoring of the MU radar antenna pattern by Satellite Ohzora (EXOS-C)

As the first attempt among MST (mesosphere stratosphere troposphere) type radars, the MU (middle and upper atmosphere) radar features an active phased array system. Unlike the conventional large VHF radars, in which output power of a large vacuum tube is distributed to individual antenna elements, each of 475 solid state power amplifier feeds each antenna element. This system configuration enables very fast beam steering as well as various flexible operations by dividing the antenna into independent subarrays, because phase shift and signal division/combination are performed at a low signal level using electronic devices under control of a computer network. The antenna beam can be switched within 10 microsec to any direction within the zenith angle of 30 deg. Since a precise phase alignment of each element is crucial to realize the excellent performance of this system, careful calibration of the output phase of each power amplifier and antenna element was carried out. Among various aircraft which may be used for this purpose artificial satellites have an advantage of being able to make a long term monitoring with the same system. An antenna pattern monitoring system for the MU radar was developed using the scientific satellite OHZORA (EXOS-C). A receiver named MUM (MU radar antenna Monitor) on board the satellite measures a CW signal of 100 to 400 watts transmitted from the MU radar. The principle of the measurement and results are discussed.

Sato, T.↗
NASA NTRS2004

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

local oscillators↗
NASA NTRS2004

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Freeman, Jon C.↗
NASA NTRS1990

A spread-spectrum modem using constant envelope BPSK for a mobile satellite communications terminal

This paper describes a 5-kilobit/s spread spectrum modem with a 1.275 mega-Hz chip rate for mobile satellite communications. We used a Viterbi decoder with a coding gain of 7.8 dB at a BER of 10(exp -5) to decrease the required receiver power. This reduces the cost of communication services. The spread spectrum technique makes the modem immune to terrestrial radio signals and keeps it from causing interference in terrestrial radio systems. A class C power amplifier reduces the modem's power consumption. To avoid nonlinear distortion caused by the amplifier, the envelope of the input signal is kept constant by adding quadrature channel signal to the BPSK signal. To simulate the worst case, we measured the modem's output spectrum using a limiting amplifier instead of the class C amplifier, and found that 99 percent of the spectral power was confined to the specified 2.55 mega-Hz bandwidth.

Iizuka, N.↗
NASA NTRS1994

Satellite Communications Applications Research

This report describes work performed by SDL in the development of monolithically-integrated master oscillator power amplifiers under the NASA-SCAR research contract. The goals of the program were to demonstrate high power diffraction-limited operation from a semiconductor laser with the following characteristics: (1) Output power of 0.5 to 1.0 W continuous-wave (cw); (2) Single spectral mode with greater than 20 dB of side mode suppression; (3) Single spatial mode operation; (4) Modulation capability of 0.5 GHz; and (5) Operating wavelength between 830-860 nm. Cw diffraction-limited output powers as high as 2.2 W were achieved while maintaining a single longitudinal mode. Side mode suppression ratios greater than 20 dB are typically obtained. The single spatial mode output has a Strehl ratio estimated at 0.85, and a high-speed modulation capability was demonstrated with a small-signal 3-dB roll-off at 1.0 GHz. Finally, all of this performance was obtained in the 860 nm wavelength band, which corresponds to the peak sensitivity of Si detectors. During the first option period, three deliverables were fabricated and delivered that included 1 distributed Bragg reflector (DBR) laser operating at 970 nm, 1 DBR laser operating at 860 nm, and one monolithic flared amplifier master oscillator power amplifier (MFA-MOPA) providing 0.5 W cw diffraction-limited output. During the second option period, a total of 5 MFA-MOPA devices were delivered, each operating to better than 1 W cw diffraction-limited at 860 nm.

Lang, Robert J.↗
NASA NTRS1980

Modified Reference SPS with Solid State Transmitting Antenna

The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.

Woodcock, G. R.↗
NASA NTRS1980

Modified reference SPS with solid state transmitting antenna

The motivations for considering solid state microwave power amplifiers for the solar power satellite transmitting antenna are the possibilities of greatly increased system reliability due to elimination of electron tube cathodes, a lower mass per unit power and transmitting array area due to the high power densities obtainable in semiconductors, and, probably, cost savings due to development of small hardware items that can be handled by individuals instead of organizations. In order to provide a fair assessment where we stand today with regard to solid state SPS technology, the design described here is close to that of the NASA/DOE reference and is implemented using today's solid state technology with only a small "push". The small push is raising the efficiency of DC-RF conversion from the .68 obtained by RCA in 1975 to somewhat over .8 of the solid state SPS. This is generally considered feasible by semiconductor industry representatives. Other solid state SPS configurations can yield somewhat better performance. However, these generally do not provide as fair a vehicle for comparison with the reference and usually also incorporate somewhat more advanced technologies.

Woodcock, G. R.↗
NASA NTRS1999

Research and Development of Laser Diode Based Instruments for Applications in Space

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

Krainak, Michael↗
NASA NTRS1999

Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

Mueller, C. H.↗
NASA NTRS2008

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Fung, King man↗
NASA NTRS1997

Investigation of Fiber Optics Based Phased Locked Diode Lasers

Optical power beaming requires a high intensity source and a system to address beam phase and location. A synthetic aperture array of phased locked sources can provide the necessary power levels as well as a means to correct for phase errors. A fiber optic phase modulator with a master oscillator and power amplifier (MOPA) using an injection-locking semiconductor optical amplifier has proven to be effective in correcting phase errors as large as 4pi in an interferometer system. Phase corrections with the piezoelectric fiber stretcher were made from 0 - 10 kHz, with most application oriented corrections requiring only 1 kHz. The amplifier did not lose locked power output while the phase was changed, however its performance was below expectation. Results of this investigation indicate fiber stretchers and amplifiers can be incorporated into a MOPA system to achieve successful earth based power beaming.

Burke, Paul D.↗
NASA NTRS2006

MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Paidi, Vamsi↗
DOE OSTI2021

Demonstration of a compact, multi-joule, diode-pumped Tm:YLF laser

We report the demonstration of a diode-pumped Tm:YLF laser operating at 1.88 µm that produces pulse energies up to 3.88 J in 20 ns. The compact system consists of a Q-switched cavity-dumped oscillator generating 18 mJ pulses, which are then amplified in a 4-pass power amplifier. Energies up to 38.1 J were obtained with long-pulse amplifier operation. These results illustrate the high energy storage and extraction capabilities of diode-pumped Tm:YLF, opening the path to high peak and average power mid-infrared solid-state lasers

47 OTHER INSTRUMENTATION↗