Development of Next-Generation Vertical GaN Devices for High-Power-Density Electric Drivetrain.
Abstract not provided.
Pickrell, Gregory↗
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Development of Next-Generation Vertical GaN Devices for High-Power-Density Electric Drivetrain.
Abstract not provided.
Binder, Andrew↗
An Interior-Point Solver for Optimal Power Flow Problem Considering Distributed FACTS Devices
In this paper, we propose an AC optimal power flow (ACOPF) model considering distributed flexible AC transmission system (D-FACTS) devices, in which the reactance of D-FACTS equipped lines are introduced as decision variables. This is motivated by increasing interests in using D-FACTS devices to address system operational and cyber-security concerns. First, D-FACTS devices can be incorporated in real-time operations for economic benefits such as managing power congestions and reducing system losses. Second, D-FACTS devices can be utilized by moving target defense (MTD), an emerging concept against cyber-attacks, to prevent attackers from knowing true system configurations. Therefore, system operators can use the proposed ACOPF model to achieve economic benefits and provide the setpoints of D-FACTS devices for MTD at the same time. In addition, we rigorously derive the gradient and Hessian matrices of the objective function and constraints, which are further used to build an interior-point solver of the proposed ACOPF. Numerical results on the IEEE 118-bus transmission system show the validity of the proposed ACOPF model as well as the efficacy of the interior-point solver in minimizing system losses and generation costs.
Liu, Bo↗
SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm 2
Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm 2 over a footprint of 0.25 cm 2 . The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm 2 . ° $C$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.
42 ENGINEERING↗
Ultra Wide Bandgap Laser Addressable Photoconductors
Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.
42 ENGINEERING↗
Methods, systems, and devices for accurate signal timing of power component events
Disclosed herein are methods, systems, and devices for system event detection associated with power grid components. Methods include detecting, at a plurality of sensors, emissions from a system event associated with at least one winding of a power component. Methods also include determining, using a processor, a plurality of event parameters based, at least in part, on measurements made by the plurality of sensors, the event parameters identifying arrival times of the emissions at each of the plurality of sensors. Methods further include generating, using the processor, an output identifying an estimate of a position of the system event within the power component, the estimate being generated based, at least in part, on the arrival times identified by the plurality of event parameters.
Wu, Keshang↗
Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime
The emergence of wide-bandgap (WBG) devices in power electronics packages has brought significant attention to the reliability and thermal performance of the bonded interfaces. These interfaces, such as die-attach and substrate-attach, need to withstand the severe stress induced on them by the high-temperature (> 200°C) operation of the WBG devices. Sintered silver and transient liquid phase alloys are key bonded interfaces that can enable the high-temperature operation of WBG devices, however it is essential to evaluate their reliability and study the possible failure mechanisms before they can be used in power electronics packages. Sintered silver is already being adopted in commercial packages as a die-attach, but large-area substrate-attach offers additional reliability challenges. In this project, we investigate the reliability of these interface materials under accelerated thermal cycling and correlate these results with finite element simulations to develop lifetime prediction models. The failure mechanisms of these bonded interfaces are also studied.
47 OTHER INSTRUMENTATION↗
Dichlorinated Dithienylethene-Based Copolymers for Air-Stable n-Type Conductivity and Thermoelectricity
Here, two donor-acceptor polymers were obtained by coupling difluoro- and dichloro-substituted forms of the electron-deficient unit BDOPV and the relatively weak donor moiety dichlorodithienylethene (ClTVT). The conductivity and power factors of doped devices are different for the chlorinated and fluorinated BDOPV polymers. High electron conductivity of 38.3 and 16.1 S cm -1 were obtained from the chlorinated and fluorinated polymers with N-DMBI, respectively, and 12.4 and 2.4 S cm -1 were obtained from the chlorinated and fluorinated polymers with CoCp 2 , respectively, from drop-cast devices. The corresponding power factors are 22.7, 7.6, 39.5 and 8.0 μW m -1 K -2 , respectively. Doping of PClClTVT with N-DMBI results in excellent air-stability; the electron conductivity of devices with 50 mol% N-DMBI as dopant remained up to 4.9 S m -1 after 222 days in the air, the longest for an n-doped polymer stored in air, with a thermoelectric power factor of 9.3 μW m -1 K -2 . However, the conductivity of PFClTVT-based devices can hardly be measured after 103 days. These observations are consistent with morphologies determined by grazing incidence wide angle X-ray scattering (GIWAXS) and atomic force microscopy (AFM). The results demonstrate that chemical structures leading to dense and ordered packing can enhance electron conductivity and air stability of n-type donor-acceptor polymers.
30 DIRECT ENERGY CONVERSION↗
Systems and methods for distributed power system model calibration
A computing device for distributed power system model calibration is provided. The computing device is programmed to receive event data and model response data associated with a model to simulate, wherein the model includes a plurality of parameters, divide the event data into a plurality of sets, wherein each set includes associated parameters, and transmit the plurality of sets of event data to a plurality of client nodes. Each client node of the plurality of client nodes is programmed to analyze a corresponding set of event data to determine updated parameters for the model. The computing device is further programmed to receive a plurality of updated parameters for the model from the plurality of client nodes and analyze the received plurality of updated parameters to determine at least one adjusted parameter.
Wang, Honggang↗
Reliable Power for Remote Applications
Optical power beaming has the potential to fundamentally change how remote devices receive power, leading to technological innovation across many sectors. NREL is interested in teaming with partners to engineer field-ready (and space-ready) solutions for long-range power beaming and adapt new ideas to important applications.
14 SOLAR ENERGY↗
2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness
We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.
Qin, Yuan↗
MLSPICE: Machine Learning based SPICE Modeling Platform for Power Magnetics
Electrical power converters are critical to a wide range of applications ranging from renewable integration to transportation electrification, and can be a key factor determining the size, weight, and efficiency of energy conversion systems. Magnetic components are typically the largest and least efficient components in power electronics. While there have been major strides in the modeling and analysis of power semiconductor devices and circuit simulations, the necessary advances in the design of power magnetics have lagged. In this project, we have transformed the modeling and design of power magnetics with machine learning enabled methods and catalyze simultaneous disruptive improvements for ML-based power electronics design tools. A fully automated open-source machine learning based magnetics modeling platform – the MagNet project - with innovations in full stack have been developed to greatly accelerate the design process and provide new insights to magnetic material and geometry design. The ARPA-E funded MagNet platform contains three major building blocks: 1) a ML-Integrated Data Acquisition System (MIDAS): a highly automated data acquisition testbed which is capable of measuring a large number of magnetic cores with a wide range of electrical circuit excitations; 2) a ML-integrated Core Loss Model (MICLM): a machine-learning trained modeling method for modeling the core loss and saturation effects of magnetic materials for arbitrary excitation waveforms; 3) ML-guided Magnetics SPICE Simulation Tool (PMSPICE): a fully integrated CAD tool which can simulate the magnetics in SPICE. It can help the designers to quickly model the linear and non-linear characteristics of magnetic components and evaluate their behavior in SPICE simulations. The developed MagNet system has fully demonstrated the proposed performance target and has been open sourced to the entire power electronics community to advance the modeling and design of power magnetics from many different angles.
36 MATERIALS SCIENCE↗
Conservation Voltage Reduction (CVR) via Two-Timescale Control in Unbalanced Power Distribution Systems
Voltage control devices are employed in power distribution systems to reduce the power consumption by operating the system closer to the lower acceptable voltage limits; this technique is called conservation voltage reduction (CVR). The different modes of operation for system’s legacy devices (with binary control) and new devices (e.g. smart inverters with continuous control) coupled with variable photovoltaic (PV) generation results in voltage fluctuations which makes it challenging to achieve CVR objective. This paper presents a two-timescale control of feeder’s voltage control devices to achieve CVR that includes (1)a centralized controller operating in a slower time-scale to coordinate voltage control devices across the feeder and (2) local controllers operating in a faster timescale to mitigate voltage fluctuations due to PV variability. The centralized controller utilizes a three-phase optimal power flow model to obtain the decision variables for both legacy devices and smart inverters. The local controllers operate smart inverters to minimize voltage fluctuations and restore nodal voltages to their reference values by adjusting the reactive power support. The proposed approach is validated using the IEEE-123 bus (medium-size) and R3-12.47-2 (large-size) feeders. It is demonstrated that the proposed approach is effective in achieving the CVR objective for unbalanced distribution systems.
optimal control, distributed generation, fluctuati↗
Method and system for measurement of impedance of electrochemical devices
The present disclosure provides methods for determining impedance of an electrochemical device by electrically connecting a variable impedance in parallel with the electrochemical device; electrically connecting a power supply to the electrochemical device, the power supply generating a power supply current; modulating a current through the variable impedance; measuring a stack current flowing through the electrochemical device; measuring, at the electrochemical device, a voltage across at least a portion of the electrochemical device; and calculating, based on the measured stack current and the measured voltage, the impedance of the electrochemical device. Systems for performing such methods are also provided.
Klein, Jr., Walter Ellis↗
Smart Outlets: Wireless Meter and Control Systems for Plug and Process Loads
Smart outlets control the flow of power to devices plugged into them and measure their energy use. The energy use data can be accessed via an online dashboard or smartphone application, allowing the user to turn power to plug-in devices on or off based on a schedule established in the dashboard or application. This four-page resource is a fact sheet meant to educate commercial building owners on smart outlets: what they are, why we use them, and how to use them in a way that will achieve energy savings while maintaining occupant comfort. The resource also describe how to procure a smart outlet system and how to fully capture their benefits over time. This resource was developed to support the Better Buildings Alliance Plug and Process Loads Technology Research Team.
30 DIRECT ENERGY CONVERSION↗
Hardware Design of a 13.8-kV/3-MVA PV Plus Storage Solid-State Transformer (PVS-SST)
Not provided.
Engineering↗
Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging
The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.
42 ENGINEERING↗
Templating Functional Materials Using Self-Assembled Block Copolymer Thin-Film for Nanodevices
The nanomorphologies and nanoarchitectures that can be synthesized using block copolymer (BCP) thin-film self-assembly have inspired a variety of new applications, which offer various advantages, such as, small device footprint, low operational power and enhanced device performance. Imperative for these applications, however, is the ability to transform these small polymeric patterns into useful inorganic structures. BCP-templated inorganic nanostructures have shown the potential for use as active materials in various electronic device applications, including, field-effect transistors, photodetectors, gas sensors and many more. This article reviews various strategies that have been implemented in the past decade to fabricate devices at nanoscale using block copolymer thin films.
Subramanian, Ashwanth↗