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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Carbohydrate-Containing Conjugated Polymers: Solvent-Resistant Materials for Greener Organic Electronics

Organic semiconducting polymers are exciting materials for electronic applications because of their good mechanical and optoelectronic properties. A major advantage of organic semiconductors is their solution processability. This allows access to a variety of simple and cost-effective device fabrication methods compared to the expensive, high-temperature processing methods required for silicon-based electronics. However, these materials often have low solubility, which limits their processing to toxic halogenated solvents. Also, their limited solubility often leads to interfacial mixing during device fabrication. Herein, this work explores the incorporation of environmentally friendly carbohydrate side chains in conjugated polymers to enhance processability in eco-friendly solvents. Moreover, a mild postprocessing treatment was designed to enable solvent resistance. Isoindigo-based polymers with varied ratios of acetyl-protected galactose side chains were synthesized to improve solubility in o-anisole in the protected state, while inducing solvent resistance through intramolecular hydrogen bonding in the deprotected state. Solvent resistance was confirmed both visually upon submersion in various solvents and using UV–visible spectroscopy. Importantly, the mild basic treatment to achieve solvent resistance has no negative impact on the electronic performance of these materials in organic field-effect transistors, even after subsequent submersion in various solvents, making them a valuable platform for the production of green processable multilayer electronics.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Containerless high temperature property measurements by atomic fluorescence

Containerless high temperature processing and material property measurements are discussed. Researchers developed methods for non-contact suspension, heating, and property measurement for materials at temperatures up to 3,680K, the melting point of tungsten. New, scientifically interesting results were obtained in Earth-based research. These results and the demonstration of new methods and techniques form a basis for further advances under the low gravity environment of space where containerless conditions are more easily achieved. Containerless high temperature material property investigations that have been completed in this and our earlier projects include measurements of fluorine LaB sub 6 reaction kinetics at 1,000 to 1,500K; optical property measurements on sapphire (Al2O3) at temperatures up to the melting point (2,327K); and vapor pressure measurements for LaB sub 6 at 2,000 to 2,500K, for molybdenum up to 2,890K and for tungsten up to 3,680K. Gas jet levitation which is applicable to any solid material, and electromagnetic levitation of electrical conductors were used to suspend the materials of interest. Non-contact heating and property measurements were achieved by optical techniques, i.e., laser heating, laser induced fluorescence measurements of vapor concentrations, and optical pyrometry for specimen temperatures.

Nordine, Paul C.↗
NASA NTRS1982

Small area silicon diffused junction X-ray detectors

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Walton, J. T.↗
NASA NTRS2006

In-Situ Crystallization of a Lithium Disilicate Glass--Effect of Pressure on Crystal Growth Rate

Crystallization of a Li2O.2SiO2 (LS2) glass subjected to a uniform hydrostatic pressure of 4.5 GPa and 6 GPa was investigated up to a temperature of 750 C. The density of the compressed glass is about 2% greater at 4.5 GPa than at 1 atm and, depending upon the processing temperature, up to 10% greater at 6 GPa. Crystal growth rates investigated as a function of temperature and pressure show that lithium disilicate crystal growth is an order of magnitude slower at 4.5 GPa than 1 atm resulting in a shift of +45 C (plus or minus 10 C) in the growth rate curve at high pressure compared to 1 atm condition. At 6 GPa lithium disilicate crystallization is suppressed entirely, while a new high pressure lithium metasilicate crystallizes at temperatures 95 C (plus or minus 10 C) higher than those reported for lithium disilicate crystallization at 1 atm. The decrease in crystal growth rate with increasing pressure for lithium disilicate glass up to 750 C is related to an increase in viscosity with pressure associated with fundamental changes in glass structure accommodating densification.

Fuss, T.↗
DOE OSTI2023

Simultaneous improvement in strength and ductility in 7xxx Al through a combination of natural aging and deformation

Room temperature processing methods of reaching near-T6 yield and ultimate tensile strength in Al–Zn–Mg–Cu alloys provide a potentially lower cost alternative to high temperature forming and post-forming artificial aging methods. Here, this study demonstrates a method, where a combination of pre-deformation and natural aging matched T6 strength along with ductility and strain hardening greater than the T6 values. Tensile deformation of 5% and 10% was applied to naturally aged samples at 144 h (6 days) and the samples were further naturally aged up to 220 days. The pre-deformed samples showed strong type A Portevin-Le Chatelier (PLC) banding with limited ductility and strain hardenability. Further natural aging increased both strength and ductility simultaneously and converted PLC to type B. This resulted in the same yield strength as T6 temper in the 10% deformed sample but with almost 77% greater total ductility (including the 10% pre-deformation). The simultaneous increase in strength and ductility was attributed to the small, shearable clusters/precipitates and solutes present in the microstructure as suggested by the changes in the PLC behavior.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Levitation by Heat Radiation in Microgravity

Report presents calculations relating to feasibility of proposed heating-and-levitating technique for use in microgravity. In material-processing system based on this technique, specimen heated to required processing temperature by thermal radiation, and pressures of radiation impinging on specimen from different directions controlled to push specimen toward desired position. Technique used in spaceborne manufacturing processes and experiments requiring levitation in vacuum to prevent contamination of any kind from reaching specimens.

Moynihan, Philip I.↗
NASA NTRS1988

Growth of diamond by RF plasma-assisted chemical vapor deposition

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, RF input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Meyer, Duane E.↗
NASA NTRSDate not supplied

Evaluation of Hydrolytic Degradation of Poly(lactic acid) (PLA) Matrices in Compression Molded Flax/PLA Composites

Poly(lactic acid) (PLA) is a bio-based plastic that is an attractive alternative to its petroleum-based counterparts because of its high strength and ease of thermal processing. In an effort to reduce the carbon footprint of fossil-fuel based polymer matrix composites, PLA along with naturally-occurring fibers are being explored to produce entirely bio-based replacements. Challenges in producing these composites occur due to the water affinity of the natural fibers and the susceptibility of the PLA to hydrolytic degradation. Hydrolysis of PLA occurs at elevated processing temperatures and can further be accelerated by the presence of water contained in the natural fibers. This talk will discuss the challenges and considerations associated with processing PLA in the presence of water-absorbing flax fibers to produce composites via compression molding. The thermal, physical, and mechanical properties of PLA/flax composites will be characterized at various processing times in an effort to identify optimal manufacturing conditions.

Natural Materials↗
DOE OSTI2023

Synthesizing and formulating metal oxide nanoparticle inks for perovskite solar cells

The perovskite solar cell has commercial potential due to the low-cost of materials and manufacturing processes with cell efficiencies on par with traditional technologies. Nanomaterials have many properties that make them attractive for the perovskite devices, including low-cost inks, low temperature processing, stable material properties and good charge transport. In this feature article, the use of nanomaterials in the hole transport and electron transport layers are reviewed. Specifically, SnO 2 and NiO x are the leading materials with the most promise for translation to large scale applications. Here, the review includes a discussion of the synthesis, formulation, and processing of these nanoparticles and provides insights for their further deployment towards commercially viable perovskite solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1983

Containerless high temperature property measurements by atomic fluorescence

The use of laser induced fluorescence (LIF) techniques for containerless study of high temperature processes and material properties is studied. Gas jet and electromagnetic levitation and electromagnetic and laser heating techniques are used with LIF in Earth-based containerless high temperature experiments. The work to date includes development of an apparatus and its use in studies of chemical reactions on Al2O3, molybdenum, and tungsten specimens, novel methods for noncontact specimen temperature measurement, and levitation jet properties. Brief summaries of these studies are given. The apparatus is described and detailed results for the current reporting period are presented.

Source record↗
NASA NTRS1984

Containerless high temperature property measurements by atomic fluorescence

Laser induced fluorescence (LIF) techniques for containerless study of high temperature processes and material properties was studied. Gas jet and electromagnetic levitation and electromagnetic and laser heating techniques are used with LIF in earth-based containerless high temperature experiments. Included are the development of an apparatus and its use in the studies of (1) chemical reactions on Al2O3, molybdenum, tungsten and LaB6 specimens, (2) methods for noncontact specimen temperature measurement, (3) levitation jet properties and (4) radiative lifetime and collisional energy transfer rates for electronically excited atoms.

Schiffman, R. A.↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗
NASA NTRS1989

An investigation of some mechanical and thermal properties of lunar simulant materials heated at 2.45 GHz

Lunar simulant material was fabricated to simulate Apollo 11, Apollo 15, and Apollo 16 soils. The approximate compositions which these soils simulate are given. Samples of each soil simulate were fabricated into right circular cylinders, placed into a microwave reaction cavity, and heated using 2.45 GHz radiation to a particular processing temperature at which it was held for a prescribed length of time. Examples are given of two microwave heating programs for these simulant samples. Upon completion of thermal processing, each sample had its top and bottom surfaces polished. A technique was employed which looks at hardness data to determine the fracture toughness of a material and then relates this to thermal shock resistance. Some advantages of this technique are its low cost for analysis and thermal shock resistance as a function of initial sample orientation in the microwave field can be determined. Samples were prepared for testing and results are expected. At the same time, other samples are currently being investigated using scanning electron microscopy to determine their microstructures.

Meek, T. T.↗
NASA NTRS2003

Initial Measurement of the Vapor Pressures of Simple Refractory Materials: Cu and Fe

It has become increasingly clear over the past decade that high temperature processes played important roles in the Primitive Solar Nebula. Unfortunately, basic data, such as the vapor pressures of iron or SiO have not been measured over the appropriate temperature range (near T approximately equal to 2000K), but must be extrapolated from lower temperature measurements often made more than 50 years ago. The extrapolation of the available data to higher temperatures can be quite complex and can depend on other factors such as the oxygen fugacity or the presence of hydrogen gas. Moreover, modern technology has made possible more accurate measurements of such quantities over a wider temperature range. We recently acquired a commercial Thermo-Cahn Thermogravimetric system capable of vacuum operation to 1700 C and measurement of mass change with microgram accuracy in a 100g sample or smaller. In this paper, we will report our progress in learning to make vapor pressure measurements using this system.

Nuth, Joseph A., III↗
NASA NTRS2013

Apparatus and Method for Compensating for Process, Voltage, and Temperature Variation of the Time Delay of a Digital Delay Line

A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.

Seefeldt, James↗
NASA NTRS1999

Effects of Melt Processing on Evolution of Structure in PEEK

We report on the effects of melt processing temperature on structure formation in Poly(ether-ether-ketone), PEEK. Real time Small Angle X-ray Scattering, SAXS, and thermal analysis are used to follow the melting behavior after various stages of processing. Assignment of peaks to structural entities within the material, the relative perfection of the crystals, and the possibility of their reorganization, are all influenced by the melt processing history. With the advent of high intensity synchrotron sources of X-radiation, polymer scientists gain a research tool which, when used along with thermal analysis, provides additional structural information about the crystals during growth and subsequent melting. PEEK is an engineering thermoplastic polymer with a very high glass transition temperature (145 C) and crystal melting point (337 C). PEEK has been the subject of recent studies by X-ray scattering in which melt and cold crystallization were followed in real-time. X-ray scattering and thermal studies have been used to address the formation of dual endothermic response which has been variously ascribed to lamellar insertion, dual crystal populations, or melting followed by re-crystallization. Another important issue is whether all of the amorphous phase is located in interlamellar regions, or alternatively whether some is located in "pockets" away from the crystalline lamellar stacks. The interpretation of scattering from lamellar stacks varies depending upon whether such amorphous pockets are formed. Some groups believe all of the amorphous phase is interlamellar. This leads to selection of a smaller thickness for the crystals. Other groups suggest that most amorphous phase is not interlamellar, and this leads to the suggestion that the crystal thickness is larger than the amorphous layer within the stacks. To investigate these ideas, we used SAXS and Differential Scanning Calorimetry to compare results of single and dual stage melt crystallization of PEEK using a treatment scheme involving annealing/crystallization at T(sub a1) followed by annealing at T(sub a2) where either T(sub a1) < T(sub a2) or T(sub a1) > T(sub a2). We proposed a model to explain multiple melting endotherms in PPS, treated according to one or two-stage melt or cold crystallization. Key features of this model are that multiple endotherms: (1) are due to reorganization/recrystallization after cold crystallization; and, (2) are dominated by crystal morphology after melt crystallization at high T. In other words, multiple distinct crystal populations are formed by the latter treatment, leading to observation of multiple melting. PEEK 45OG pellets (ICI Americas) were the starting material for this study. Films were compression molded at 400 C, then quenched to ice water. Samples were heated to 375 C in a Mettler FP80 hot stage and held for three min. to erase crystal seeds before cooling them to T(sub a1) = 280 C . Samples were held at T(sub a2) for a period of time, then immediately heated to 360 C. In the second treatment samples were held at T(sub a1) = 31 C for different crystallization times t(sub c) then cooled to 295 C and held 15 min. In situ (SAXS) experiments were performed at the Brookhaven National Synchrotron Light Source with the sample located inside the Mettler hot stage. The system was equipped with a two-dimensional position sensitive detector. The sample to detector distance was 172.7 cm and the X-ray wavelength was 1.54 Angstroms. SAXS data were taken continuously during the isothermal periods and during the heating to 360 C at 5 C/min. Each SAXS scan was collected for 30 sec. Since the samples were isotropic, circular integration was used to increase the signal to noise ratio. After dual stage melt crystallization with T(sub a1) < T(sub a2) the lower melting endotherm arises from holding at T(sub a1). During cooling a broad distribution of crystals forms, and the low-melting tail is perfected during T(sub al). Heating to T(sub a2) melts these imperfect crystals and allows others with greater average long spacing to form in their place. After dual stage crystallization with T(sub a1) > T(sub a2), the amount of space remaining for additional growth at T(sub a2) depends upon the holding time at T(sub a1). The long period of crystals formed at T(sub a2) is smaller than that formed at T(sub a1) due to growth in a now-restricted geometry. Perfection of crystals is seen as an increase of the intensity of the population scattering at higher s, while the intensity of the population scattering at lower s stays constant. During heating from below to above the minor endotherm, we see rapid decrease of the intensity of the X-ray scattering corresponding to the population of crystals scattering in the shoulder. Another important observation is that after the sample is annealed at 295 C, the shoulder intensity is restored once again. The population scattering at higher s remains longer before it disappears in the sample treated to the second stage of melt crystallization, compared to the sample crystallized with a single stage. This could be interpreted as an effect of continued perfection of the less perfect population, which is also reflected in the increased melting temperature of the smaller endotherm as the holding time at 295 C increases. In the corresponding DSC scans we see a shift in the area and the peak temperature of the lower melting endotherm with an increase of the annealing time.

Georgiev, Georgi↗