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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

42 ENGINEERING↗
DOE OSTI2021

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Pulsed-laser induced single event current measurements on two geometries of waveguide-integrated germanium photodiodes were conducted over a range of operating voltages to examine the impact of photodiode geometry on the transient response. Vertical PIN photodiodes exhibit transients with a duration that is relatively independent of the operating voltage while the transient duration in lateral PIN photodiodes depends on operating voltage. Furthermore, the experimental measurements facilitate identification of device dimensions that impact the transient response. In this work, these results can be used to identify potential radiation mitigation strategies for photodiodes operating in a radiation environment. Understanding the implications of design choices is critical for designing integrated photonic systems that balance system performance with tolerance for radiation degradation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb -1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 10 14 1 MeV neutron-equivalent cm -2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors' response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

IFNgamma-inducible CXCL10/CXCR3 axis alters the sensitivity of HEp-2 cells to ionizing radiation

Highlights: • IFNgamma/CXCL10/CXCR3 are necessary for effective IR-induced HEp-2 cell killing. • Local IR showed fewer effects on tumor burden in mice carrying CXCL10-KO xenografts. • Loss of CXCL10 showed blockage in the G0/G1 phase when exposed to a moderate dose of IR. Radiotherapy is a conventional approach for anti-cancer treatment, killing tumor cells through damaging cellular DNA. While increasing studies have demonstrated that tumors generated the tolerance to radiation and tumor immune system was found to be correlated to radiotherapy resistance. Therefore, it is critical to identify potential immune factors associated with the efficacy of radiotherapy. Here in this study, we evaluated the sensitivities of different tumor cells to radiation and determined HEp-2 cells as the radio-resistant tumor cells for further investigation. IFNgamma as a key regulator of host immune response showed the potential to sensitize tumors to ionizing radiation (IR). Besides, IFNgamma-induced CXC chemokine ligand 10 (CXCL10) was found to be necessary for effective IR-induced killing of cultured HEp-2 cells. Increased clonogenic survival was observed in CXCL10-depleted HEp-2 cells and CXCL10-KO cells. Additionally, the loss of CXCL10 in HEp-2 cells showed less progression of the G0/G1 phase to G2/M when exposed to IR (8 Gy). Local IR (20 Gy) to nude mice bearing HEp-2 tumors significantly reduced tumor burden, while fewer effects on tumor burden in mice carrying CXCL10-KO tumors were observed. We furtherly evaluated the possible roles the chemokine receptor CXCR3 plays in mediating the sensitivity of cultured HEp-2 cells to IR. Altered expression of CXCR3 in HEp-2 cells affected IR-induced killing of HEp-2 cells. Our data suggest the IFNgamma-activated CXCL10/CXCR3 axis may contribute to the effective radiation-induced killing of HEp-2 cells in vitro.

63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗
DOE OSTI2026

Phosphonic-Acid-Reinforced Polymer Hole Transport Layers for Deployable p-i-n Perovskite Photovoltaics

The long-term durability prospects of halide perovskite solar cells are rapidly improving; however, the interface between the hole transport layer (HTL) and the perovskite remains a source of degradation. Alone, polymer- or carbazole-based HTLs suffer from incomplete coverage of the underlying indium tin oxide glass, leading to degradation and compromised performance. Here, we show a multi-HTL approach whereby a polymer HTL is reinforced using a phosphonic acid modification leading to better protection of the buried perovskite interface and more columnar growth of perovskite film, resulting in an ~40-mV open-circuit voltage (VOC) improvement indicative of suppressed interfacial recombination across multiple p-i-n device architectures. Solar cells with this reinforced HTL show higher tolerance to several accelerated stress tests. We report, among the best durabilities for unencapsulated cells, a T90 ~3,000 h (T80 ~5,900 h) at 65 degrees C under continuous 1.2 sun AM 1.5G illumination and maximum power point tracking, representing a nearly 4-fold increase compared with [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz)-only devices. Furthermore, we deployed a device with this reinforced HTL on a cube satellite, with long-duration operational space testing results exceeding T80 for the complete mission duration of ~100 days in low Earth orbit.

14 SOLAR ENERGY↗
DOE OSTI2025

A comparison of surrogate constitutive models for viscoplastic creep simulation of HT-9 steel

Mechanistic microstructure-informed constitutive models for the mechanical response of polycrystals are a cornerstone of computational materials science. However, as these models become increasingly more complex – often involving coupled differential equations describing the effect of specific deformation modes – their associated computational costs can become prohibitive, particularly in optimization or uncertainty quantification tasks that require numerous model evaluations. To address this challenge, surrogate constitutive models that balance accuracy and computational efficiency are highly desirable. Data-driven surrogate models, that learn the constitutive relation directly from data, have emerged as a promising solution. In this work, we develop two local surrogate models for the viscoplastic response of a steel: a piecewise response surface method and a mixture of experts model. These surrogates are designed to adapt to complex material behavior, which may vary with material parameters or operating conditions. The surrogate constitutive models are applied to creep simulations of HT-9 steel, an alloy of considerable interest to the nuclear energy sector due to its high tolerance to radiation damage, using training data generated from viscoplastic self-consistent (VPSC) simulations. In conclusion, we define a set of test metrics to numerically assess the accuracy of our surrogate models for predicting viscoplastic material behavior, and show that the mixture of experts model outperforms the piecewise response surface method in terms of accuracy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Bonding Environments and Radiation Stabilities of Phosphate Glasses

This report is a summary of some key take-aways presented during the Phosphate Round Table Workshop held in 2020, which was led by PNNL and ANL and funded by DOE-NE. Phosphate glasses have a wide range of commercial and industrial uses due to their unique optical, chemical, and physical properties. They are a candidate material for use as an advanced waste form matrix for immobilizing radioactive waste due to their unique ability to immobilize high fractions of alkali- and sulfur-rich streams in chemically durable glasses. This literature review provides an overview of the structure of phosphate glasses, waste-form related properties of interest (e.g., chemical durability and radiation stability), a summary of how specific composition ratios affect chemical durability (e.g., [Fe]/[P] ratio, [O]/[P] ratio, Fe 2+ /Fe 3+ ratio), as well different ways that phosphate glasses can be affected by radiation. All of these are of interest to the waste form community as phosphate glasses, primarily Fe-P-O glasses, are investigated for usage in immobilizing various types of nuclear waste including U.S. legacy wastes as well as a method for treating salt-based high-level wastes from molten salt reactors and pyroprocessing of used nuclear fuels.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

Tolerance of Perovskite Solar Cells to Targeted Proton Irradiation and Electronic Ionization Induced Healing

Mixed organic–inorganic halide perovskite solar cells (PSCs) are of interest for space photovoltaic applications due to their apparent tolerance to high-energy proton radiation. Here, the use of a more stable wide-bandgap FA0.8Cs0.2PbI2.4Br0.6Cl0.02 perovskite with thin encapsulation enables, for the first time, the detailed dependence of fluence and energy of energetic protons on device performance. Energies were chosen to provide the highest concentration of displacements within the active region, and therefore the highest amount of degradation. Not only are these devices tolerant when compared to conventional technologies, but an unexpected increase in open circuit voltage and power density is observed for increased electronic ionization when the proton energy is increased. This study aims to expand the description of the proton radiation tolerance to include not only nonionizing nuclear energy losses that are most detrimental to current technologies, but electronic ionization, which is shown to yield benefits in PSCs.

device performance↗
DOE OSTI2024

Fast Neutron Irradiation of a Multichannel JFET-Based Optical Encoder

Modern electrical components are susceptible to damage from high levels of radiation and extreme temperatures found near reactors in terrestrial nuclear power plants and in aerospace applications. Radiation-hardened electronics are being developed, largely for the aerospace industry, but they sometimes rely on application-specific, small-batch semiconductor fabrication processes. These processes tend to be prohibitively expensive to develop and maintain outside major industrial facilities or governmental agencies. Recently, commercially available, nonradiation-rated junction-gate field-effect transistors (JFETs) were shown to maintain their functionality at gamma doses exceeding 1 MGy, suggesting that nonrated, commercially available electrical components could be used to develop systems that are tolerant to ionizing radiation. However, gamma ray survival is not indicative of neutron dose survival, and few studies characterize JFETs under neutron irradiation. To address this knowledge gap, a JFET-based analog multiplexer and optical pulsewidth modulation (PWM) encoder was developed and irradiated using a 252 Cf source to 1.6×10 13 n/cm 2 . The multiplexed optical encoder (MOE) system maintained functionality throughout testing and showed little evidence of radiation effects. These results indicate that circuitry tolerant to fast neutron damage can be developed using low-cost, nonradiation-rated, commercially available JFETs, which could provide a lower production cost alternative to specialized semiconductor processes when designing and building electronics better able to survive neutron irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Use of continuous sample translation to reduce radiation damage for XPCS studies of protein diffusion

An experimental setup to measure X-ray photon correlation spectroscopy during continuous sample translation is presented and its effectiveness as a means to avoid sample damage in dynamics studies of protein diffusion is evaluated. X-ray damage from focused coherent synchrotron radiation remains below tolerable levels as long as the sample is translated through the beam sufficiently quickly. Here it is shown that it is possible to separate sample dynamics from the effects associated with the transit of the sample through the beam. By varying the sample translation rate, the damage threshold level, D thresh = 1.8 kGy, for when beam damage begins to modify the dynamics under the conditions used, is also determined. Signal-to-noise ratios, R sn ≥ 20, are obtained down to the shortest delay times of 20 µs. The applicability of this method of data collection to the next generation of multi-bend achromat synchrotron sources is discussed and it is shown that sub-microsecond dynamics should be obtainable on protein samples.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO 2 ) and 14-MeV fast neutrons up to a fluence of 2.2×10 13 cm -2 . Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.

42 ENGINEERING↗