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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Bioorganic nanodots for non-volatile memory devices

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Multiphysics simulation of corona discharge induced ionic wind

Ionic wind devices or electrostatic fluid accelerators are becoming of increasing interest as tools for thermal management, in particular for semiconductor devices. In this work, we present a numerical model for predicting the performance of such devices; its main benefit is the ability to accurately predict the amount of charge injected from the corona electrode. Our multiphysics numerical model consists of a highly nonlinear, strongly coupled set of partial differential equations including the Navier-Stokes equations for fluid flow, Poisson's equation for electrostatic potential, charge continuity, and heat transfer equations. To solve this system we employ a staggered solution algorithm that generalizes Gummel's algorithm for charge transport in semiconductors. Predictions of our simulations are verified and validated by comparison with experimental measurements of integral physical quantities, which are shown to closely match.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Enhanced imaging of electronic hot spots using quantum squeezed light

Detecting electronic hot spots is important for understanding the heat dissipation and thermal management of electronic and semiconductor devices. Optical thermoreflective imaging is being used to perform precise temporal and spatial imaging of heat on wires and semiconductor materials. We apply quantum squeezed light to perform thermoreflective imaging on micro-wires, surpassing the shot-noise limit of classical approaches. We obtain a far-field temperature sensing accuracy of 42 mK after 50 ms of averaging and show that a 256×256 pixel image can be constructed with such sensitivity in 10 min. We can further obtain single-shot temperature sensing of 1.6 K after only 10 μs of averaging, enabling a dynamical study of heat dissipation. Not only do the quantum images provide accurate spatiotemporal information about heat distribution but also the measure of quantum correlation provides additional information, inaccessible by classical techniques, which can lead to a better understanding of the dynamics. We apply the technique to both aluminum and niobium microwires and discuss the applications of the technique in studying electron dynamics at low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Angular dependence of light trapping in In{sub 0.3}Ga{sub 0.7}As/GaAs quantum-well solar cells

The dependence of light trapping effects in In{sub 0.3}Ga{sub 0.7}As/GaAs quantum-well solar cells on wavelength and incident angle is experimentally characterized and analyzed. Separation of active device layers from their epitaxial growth substrate enables integration of thin-film semiconductor device layers with nanostructured metal/dielectric rear contacts to increase optical absorption via coupling to both Fabry-Perot resonances and guided lateral propagation modes in the semiconductor. The roles of Fabry-Perot resonances and coupling to guided modes are analyzed via photocurrent response measurements and numerical modeling for light incident at angles of 0° (normal incidence) to 30° off normal. Light trapping enables external quantum efficiency at long wavelengths as high as 2.9% per quantum well to be achieved experimentally, substantially exceeding the ∼1% per quantum well level typically observed. Increased long wavelength quantum efficiency is shown in experimental measurements to persist with increasing angle of incidence and is explained as a consequence of the large number of guided modes available in the device structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Heterojunction of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

The advancement of silicon (Si) technology has led to faster and smaller computers and smart cellphones. Unfortunately, further miniaturization of semiconductor devices will encounter fundamental physics limitations, including short channel effects, high contact resistance, and high heat dissipation, which will deteriorate device energy efficiency. In this project, we have explore into the creation of tunneling field effect transistors (TFETs) and switches without using semiconductors. Since these devices did not involve the use of semiconductors, our approach would have bypassed the above-mentioned limits of Si devices. During the course of this two-year funding period, we have successfully 1) Identify the essential conditions for the synthesis of co-axial hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs), i.e., co-axial BNNTs/CNTs junctions. 2) Investigate the switching behaviors of a series of precursor materials, including a) branching BNNTs/CNTs junctions, b) graphene-BNNTs junctions, and c) quantum-dots functionalized BNNTs (QDs-BNNTs).

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Adaptation of the model of tunneling in a metal/CaF{sub 2}/Si(111) system for use in industrial simulators of MIS devices

An approach toward simplification of the model of the tunneling transport of electrons through a thin layer of crystalline calcium fluoride into a silicon (111) substrate with subsequent implementation in simulators of semiconductor devices is suggested. The validity of the approach is proven by comparing the results of modeling using simplified formulas with the results of precise calculations and experimental data. The approach can be applied to calculations of tunneling currents in structures with any crystalline insulators on Si (111)

36 MATERIALS SCIENCE↗
DOE OSTI2015

Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device

Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Selenium-iodide: A low melting point eutectic semiconductor

Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices. Many elemental and compound liquid semiconductors exist, although the lowest melting point is observed for Se at 221 °C. Recently, reports of liquid Se-S systems have shown betavoltaic and alphavoltaic power generation as a liquid with a reduced melting point of 105 °C. Here in this paper, we show the ability to depress the melting point to 57 °C by using equal atomic fractions of selenium and iodine while maintaining semiconducting behavior. A heterojunction structure using ITO and n-GaN as the contacts was selected based on chemical compatibility and predicted band lineups. Electrical and optical measurements were used to deduce the electronic and transport properties of the mixture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Matrix-filler interfaces and physical properties of metal matrix composites with negative thermal expansion manganese nitride

Copper matrix composites containing antiperovskite manganese nitrides with negative thermal expansion (NTE) were formed using pulsed electric current sintering. Energy dispersive X-ray spectroscopy revealed that the chemically reacted region extends over 10 μm around the matrix–filler interfaces. The small-size filler was chemically deteriorated during formation of composites and it lost the NTE property. Therefore, we produced the composites using only the nitride particles having diameter larger than 50 μm. The large-size filler effectively suppressed the thermal expansion of copper and improved the conductivity of the composites to the level of pure aluminum. The present composites, having high thermal conductivity and low thermal expansion, are suitable for practical applications such as a heat radiation substrate for semiconductor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Transmission and reflection of terahertz plasmons in two-dimensional plasmonic devices

We found that plasmons in two-dimensional semiconductor devices will be reflected by discontinuities, notably, junctions between gated and non-gated electron channels. The transmitted and reflected plasmons can form spatially- and frequency-varying signals, and their understanding is important for the design of terahertz detectors, oscillators, and plasmonic crystals. Using mode decomposition, we studied terahertz plasmons incident on a junction between a gated and a nongated channel. The plasmon reflection and transmission coefficients were found numerically and analytically and studied between 0.3 and 1 THz for a range of electron densities. At higher frequencies, we could describe the plasmons by a simplified model of channels in homogeneous dielectrics, for which the analytical approximations were accurate. At low frequencies, however, the full geometry and mode spectrum had to be taken into account. Moreover, the results agreed with simulations by the finite-element method. As a result, mode decomposition thus proved to be a powerful method for plasmonic devices, combining the rigor of complete solutions of Maxwell's equations with the convenience of analytical expressions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2019

Halide Perovskites: Is It All about the Interfaces?

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

14 SOLAR ENERGY↗
DOE OSTI2015

Nonequilibrium Green's function formulation of intersubband absorption for nonparabolic single-band effective mass Hamiltonian

The formulas are derived that enable calculations of intersubband absorption coefficient within nonequilibrium Green's function method applied to a single-band effective-mass Hamiltonian with the energy dependent effective mass. The derivation provides also the formulas for the virtual valence band components of the two-band Green's functions which can be used for more exact estimation of the density of states and electrons and more reliable treatment of electronic transport in unipolar n-type heterostructure semiconductor devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Characteristics of the dynamics of breakdown filaments in Al{sub 2}O{sub 3}/InGaAs stacks

In this paper, the Al{sub 2}O{sub 3}/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

We investigate the crystal structure, transport, and magnetic properties of Fe-doped ferromagnetic semiconductor (Al{sub 1−x},Fe{sub x})Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al{sub 1−x},Fe{sub x})Sb thin films with x ≤ 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al{sub 1−x},Fe{sub x})Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (T{sub C}) of 40 K. In the (Al{sub 1−x},Fe{sub x})Sb thin film with x = 14%, a sudden drop of the hole mobility and T{sub C} was observed, which may be due to the microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Simulation of Silicon Nanodevices at Cryogenic Temperatures for Quantum Computing

Cryogenic nanoscale semiconductor devices are crucial for a wide variety of applications. The accurate design of such devices involve solving their electrostatics from fundamental semiconductor equations at low temperatures. We employ COMSOL to model a prototype cryogenic nanostructure, that can be used to readout the spin of a single electron in silicon, for quantum computing applications. By achieving convergence down to 15 Kelvin (K), we provide a guideline of techniques that aid to enhance convergence at cryogenic temperatures. We further compare the device electrostatics at different temperatures, which aids us to estimate the accuracy with temperature.

Mohiyaddin, Fahd A.↗