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At least 217 records · Page 12

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

The energy consumed in manufacturing silicon solar cell modules was calculated for the current process, as well as for 1982 and 1986 projected processes. In addition, energy payback times for the above three sequences are shown. The module manufacturing energy was partitioned two ways. In one way, the silicon reduction, silicon purification, sheet formation, cell fabrication, and encapsulation energies were found. In addition, the facility, equipment, processing material and direct material lost-in-process energies were appropriated in junction formation processes and full module manufacturing sequences. A brief methodology accounting for the energy of silicon wafers lost-in-processing during cell manufacturing is described.

Goldman, H.↗

Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material: A speculative approach

Some background information on intrinsic point defects is provided and on carbon and oxygen in silicon in so far as it may be relevant for the efficiency of solar cells fabricated from EFG ribbon material. The co-precipitation of carbon and oxygen and especially of carbon and silicon self interstitials are discussed. A simple model for the electrical activity of carbon-self-interstitial agglomerates is presented. The self-interstitial content of these agglomerates is assumed to determine their electrical activity and that both compressive stresses (high self-interstitial content) and tensile stresses (low self-interstitial content) give rise to electrical activity of the agglomerates. The self-interstitial content of these carbon-related agglomerates may be reduced by an appropriate high temperature treatment and enhanced by a supersaturation of self-interstitials generated during formation of the p-n junction of solar cells. Oxygen present in supersaturation in carbon-rich silicon may be induced to form SiO, precipitates by self-interstitials generated during phosphorus diffusion. It is proposed that the SiO2-Si interface of the precipates gives rise to a continuum of donor stables and that these interface states are responsible for at least part of the light inhancement effects observed in oxygen containing EFG silicon after phosphorus diffusion.

Goesele, U.↗

Surface-state spectra from thick-oxide MOS tunnel junctions

The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.

Ma, T. P.↗

Computer simulation of impurity diffusion in silicon, part 1

The elementary classical models for idealized diffusion conditions are described, and the principles are then used in developing more realistic models. The practical models require some type of numerical analysis. The numerical techniques are outlined and details concerning their implementation are given. Some results are presented which were obtained with the computer programs implementing the numerical techniques with implicit and explicit methods. Special problems of impurity-rich interlayers forming between an oxide and silicon are considered. A set of computed curves for sheet resistance, junction depth, and oxide thickness for different diffusion schedules is included.

Gassaway, J. D.↗

NASA Tech Briefs, September 2008

Topics covered include: Nanotip Carpets as Antireflection Surfaces; Nano-Engineered Catalysts for Direct Methanol Fuel Cells; Capillography of Mats of Nanofibers; Directed Growth of Carbon Nanotubes Across Gaps; High-Voltage, Asymmetric-Waveform Generator; Magic-T Junction Using Microstrip/Slotline Transitions; On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz; Group-III Nitride Field Emitters; HEMT Amplifiers and Equipment for their On-Wafer Testing; Thermal Spray Formation of Polymer Coatings; Improved Gas Filling and Sealing of an HC-PCF; Making More-Complex Molecules Using Superthermal Atom/Molecule Collisions; Nematic Cells for Digital Light Deflection; Improved Silica Aerogel Composite Materials; Microgravity, Mesh-Crawling Legged Robots; Advanced Active-Magnetic-Bearing Thrust- Measurement System; Thermally Actuated Hydraulic Pumps; A New, Highly Improved Two-Cycle Engine; Flexible Structural-Health-Monitoring Sheets; Alignment Pins for Assembling and Disassembling Structures; Purifying Nucleic Acids from Samples of Extremely Low Biomass; Adjustable-Viewing-Angle Endoscopic Tool for Skull Base and Brain Surgery; UV-Resistant Non-Spore-Forming Bacteria From Spacecraft-Assembly Facilities; Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy; Simplified Modeling of Oxidation of Hydrocarbons; Near-Field Spectroscopy with Nanoparticles Deposited by AFM; Light Collimator and Monitor for a Spectroradiometer; Hyperspectral Fluorescence and Reflectance Imaging Instrument; Improving the Optical Quality Factor of the WGM Resonator; Ultra-Stable Beacon Source for Laboratory Testing of Optical Tracking; Transmissive Diffractive Optical Element Solar Concentrators; Delaying Trains of Short Light Pulses in WGM Resonators; Toward Better Modeling of Supercritical Turbulent Mixing; JPEG 2000 Encoding with Perceptual Distortion Control; Intelligent Integrated Health Management for a System of Systems; Delay Banking for Managing Air Traffic; and Spline-Based Smoothing of Airfoil Curvatures.

Source record↗

New developments in silicon solar cells

Three areas of silicon solar cell development are discussed. The first area relates to ultra thin cells about 50 microns in thickness, which can be made with relative good yield and efficiency. The second describes a new effort in vertical junction cells which show increased efficiency and continues to improve. The third area describes our semicrystalline silicon work which resulted in silicon solar cells that show over 10% terrestrial conversion efficiency and are tolerant to impurities.

Lindmayer, J.↗

Development of an improved high efficiency thin silicon solar cell

Efforts were directed towards investigating means of producing more effective high-low junctions at the back of the cell. Cells with output power up to 77 mW (AM0 efficiency of 14.2 percent) were fabricated. Some reflectivity studies were also made. Deliveries of 2 cm x 2 cm experimental cells included a number having AM0 outputs greater than 70 mW.

Wrigley, C.↗

Silicon solar cells with high open-circuit voltage

Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

Minnucci, J. A.↗

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

Godlewski, M. P.↗

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Dinetta, L. C.↗

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗

A candidate low-cost processing sequence for terrestrial silicon solar cell panel

Manufacturing sequence for silicon solar cells using Czochralsky crystal growing techniques in order to produce at a rate of 20 MW per year on a 24-hour per day basis is discussed. Cost analysis of the manufacturing is presented and consideration is given to the following processing decision categories of the manufacturing of an unencapsulated solar cell from a silicon wafer: (1) treatment of the optical surface; (2) formation of the junction(s); and (3) metallization of electrical collectors. The manufacturing of encapsulated solar modules from solar cells, using two glass plates, a low iron front surface, and a standard float glass back plate, is described. Totaling the three major activities of wafer making, cell manufacturing, and module fabrication, the resulting contribution to module price will be 1.945 $/watt.

Bickler, D. B.↗

Radiation tolerance of vertical junction solar cells

Extensive radiation testing of vertical junction (VJ) solar cells demonstrated a radiation tolerance better than both planar silicon cells and at least one type of (AlGa)As-GaAs cell. Due to tradeoffs between short circuit current and open circuit voltage, the end of life (10 to the 16th power 1 MeV electrons/sq cm) maximum power point is nearly independent of bulk resistivity between 2 and 10 ohm cm, increases slightly with increasing wafer thickness between 3 and 11 mils, and increases slightly with increasing groove depth between 1 and 3 mils.

Schelnine, A.↗

Lunar Polar Exploration with Beamed Powered Rovers

Use of a laser to transmit power to a photovoltaic array has been proposed many times, including significant work done at NASA Glenn during the 1990s, but until recently the technology has lagged behind the ambitious requirements. The current NASA objective of lunar polar exploration provides the need, and evolution of higher-power and more efficient lasers provides the opportunity. Exploration of the ice-bearing craters near the lunar poles, where complete absence of sunlight precludes solar power, have been identified as a significant technology challenge for NASA’s future exploration. An approach to solve this is to use a laser to send power from the illuminated crater rim to a photovoltaic receiver on a rover inside the permanently dark region. A conceptual design was done of a prototype laser power system to be included on a proposed flight demonstration of the Kilopower space reactor. For the design, the laser transmitter is mounted on a small rover capable of moving to a location in line of sight of the receiving rover, e.g., on a crater rim with a view into the permanently dark region to be explored. A 250-watt laser diode bar transmits power at 808 nm, using a 10.5 cm optical beam director. The beam is received by a GaAs solar array mounted on the exploring rover, where it is converted into electrical power at ~50% optical to electrical efficiency. For the flight demonstration, 50 meters of laser transmission was required. The design showed a total laser mass of 7.8 kg is capable of producing the beam needed, not including the thermal control system. The demonstration design demonstrates 50-m transmission, but it would be valuable to have longer point-to-point beaming on the moon. Long beam paths require higher coherence than the diode laser bars of the demonstration system. The development of high-efficiency diode-pumped fiber lasers meets this technology need: and diode-pumped fiber lasers using the Er/Yb system can be purchased commercially with overall conversion efficiency of greater than 50% at wavelength 1.06 micrometers. Two technologies for a photovoltaic converter for this wavelength are the InGaAs photovoltaic cell, using technology developed for multi-junction space solar cells, or newly-developed high-quantum efficiency silicon cells. The next step to mature the technology would be a lunar flight demonstration. In the future, this has the potential to enhance and enable future human exploration of the moon, harvesting and utilizing the ice resources of these permanently-shadowed craters.

Geoffrey A Landis↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗