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At least 217 records · Page 12

The -SiH vibrational stretch as an indicator of the oxidation state of silicon in a cometary or asteroidal regolith

It has been experimentally shown that the position of the -SiH fundamental vibrational stretch is very sensitive to the chemical environment surrounding the Si atom. Si in an oxidizing environment will display an -SiH feature near 4.4 microns, whereas Si in a reducing grain could be responsible for a feature at 4.74 microns. It is further shown that, as an oxidized grain is reduced, the -SiH fundamental shifts to longer wavelengths through a series of intermediate bands.

Nuth, Joseph A., III↗

Fracture of flash oxidized, yttria-doped sintered reaction-bonded silicon nitride

The oxidation behavior of a slip cast, yttria-doped, sintered reaction-bonded silicon nitride after 'flash oxidation' was investigated. It was found that both the static oxidation resistance and flexural stress rupture life (creep deformation) were improved at 1000 C in air compared to those of the same material without flash oxidation. Stress rupture data at high temperatures (1000 to 1200 C) are presented to indicate applied stress levels for oxidation-dependent and independent failures.

Govila, R. K.↗

Oxidation kinetics of CVD silicon carbide and silicon nitride

The long-term oxidation behavior of pure, monolithic CVD SiC and Si3N4 is studied, and the isothermal oxidation kinetics of these two materials are obtained for the case of 100 hrs at 1200-1500 C in flowing oxygen. Estimates are made of lifetimes at the various temperatures investigated. Parabolic rate constants for SiC are within an order of magnitude of shorter exposure time values reported in the literature. The resulting silica scales are in the form of cristobalite, with cracks visible after exposure. The oxidation protection afforded by silica for these materials is adequate for long service times under isothermal conditions in 1-atm dry oxygen.

Fox, Dennis S.↗

Silicon radiation detectors with oxide charge state compensation

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

Walton, J. T.↗

Sinterability, strength and oxidation of alpha silicon carbide powders

An investigation is made of pressureless sintering of commercially available alpha-SiC powders at temperatures between 1900 and 2150 C for periods of 10 to 240 min under one atmosphere of argon pressure. It is found that alpha-SiC powder containing boron and carbon sintering aids is sinterable at 2150 C for a period of 30 min to a high final density (greater than 96 percent of theoretical). In alpha-SiC powder containing aluminum and carbon sintering aids, the final density achieved is only about 80 percent of theoretical. Determinations are made of room temperature and high temperature (1370 C) flexure strength and oxidation resistance on sintered high density (more than 96 percent of theoretical) alpha-SiC (boron, carbon) material. It is found that both the strength and the resistance to oxidation are equivalent and comparable to those of the sintered alpha-SiC which represents the state of the art.

Dutta, S.↗

Effects of silicon additions on oxidation and mechanical behavior of the nickel-base superalloy B-1900

Test specimens with nominal additions of Si were tested in oxidation, thermal fatigue, sulfidation, tension, and stress rupture, and were also extensively studied metallographically. Alloy B-1900 modified with 0.6- or 1.2-wt% Si exhibited oxidation resistance equivalent to that of aluminide-coated B-1900 during cyclic, high-gas-velocity oxidation tests. Resistances to thermal fatigue and sulfidation were improved by the Si additions, but were not superior to aluminide-coated B-1900. Stress-rupture tests at 1000 C of specimens given the standard heat treatment to simulate an aluminide coating cycle showed Si to be detrimental. However, application of another heat treatment increased the rupture life of the alloy with 0.6-wt% Si to that of the unmodified B-1900 given the standard heat treatment.

Miner, R. V., Jr.↗

Effects of silicon on the oxidation, hot-corrosion, and mechanical behavior of two cast nickel-base superalloys

Cast specimens of nickel-base superalloys 713C and Mar-M200 with nominal additions of 0, 0.5, and 1 wt% Si were evaluated for oxidation and corrosion resistance, tensile and stress-rupture properties, microstructure, and phase relations. Results are compared with those of an earlier study of the effects of Si in B-1900. Si had similar effects on all three superalloys. It improves oxidation resistance but the improvement in 713C and Mar-M200 was considerably less than in B-1900. Hot-corrosion resistance is also improved somewhat. Si is, however, detrimental to mechanical properties, in particular, rupture strength and tensile ductility. Si has two obvious microstructural effects. It increases the amount of gamma-prime precipitated in eutectic nodules and promotes a Mo(Ni,Si)2 Laves phase in the alloys containing Mo. These microstructural effects do not appear responsible for the degradation of mechanical properties, however.

Miner, R. V., Jr.↗

Nuclear Magnetic Resonance Used to Quantify the Effect of Pyrolysis Conditions on the Oxidative Stability of Silicon Oxycarbide Ceramics

This work was undertaken in support of the Low Cost Ceramic Composite Virtual Company, (LC^3), whose members include Northrop Grumman Corporation, AlliedSignal Inc., and Allison Advanced Development Company. LC^3 is a cost-shared effort funded by the Advanced Research Projects Agency (ARPA) and the LC^3 participants to develop a low-cost fabrication methodology for manufacturing ceramic matrix composite structural components. The program, which is being administered by the U.S. Air Force Wright Laboratory Materials Directorate, is focused on demonstrating a ceramic matrix composite turbine seal for a regional aircraft engine. This part is to be fabricated by resin transfer molding of a siloxane polymer into a fiber preform that will be transformed into a ceramic by pyrolytic conversion.

Source record↗

Silicon dioxide space coatings studied ellipsometrically

Mechanisms of initial oxidation of silicon for the formation of silicon dioxide have been investigated. The oxidation of silicon in an atomic oxigen plasma environment is found to exhibit two distinct and linear oxide growth curves for each of the plasma powers used in ashing (25, 50, and 100 watts). Data obtained indicate that the exponent to the pressure in the oxide growth rate formula changes from 1.4 + or - 0.1 to 0.7 + or - 0.1 as one crosses the critical thickness. These data contradict the theory predicting that this exponent should be 1 for both regimes. The activation energy for oxidation in the zone reaction regime is found to be 0.17 eV, in contrast to the published value of 1-2 eV for thermally grown oxides.

De, Bhola N.↗

Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry

The monolayer-sensitive variable-angle spectroscopic ellipsometry technique was used to study the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an RF power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.

De, Bhola N.↗

Crack healing behavior of hot pressed silicon nitride due to oxidation

It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

Choi, S. R.↗

Plasma-Sprayed Refractory Oxide Coatings on Silicon-Base Ceramics

Silicon-base ceramics are promising candidate materials for high temperature structural applications such as heat exchangers, gas turbines and advanced internal combustion engines. Composites based on these materials are leading candidates for combustor materials for HSCT gas turbine engines. These materials possess a combination of excellent physical and mechanical properties at high temperatures, for example, high strength, high toughness, high thermal shock resistance, high thermal conductivity, light weight and excellent oxidation resistance. However, environmental durability can be significantly reduced in certain conditions such as when molten salts, H2 or water vapor are present. The oxidation resistance of silicon-base materials is provided by SiO2 protective layer. Molten salt reacts with SiO2 and forms a mixture of SiO2 and liquid silicate at temperatures above 800C. Oxygen diffuses more easily through the chemically altered layer, resulting in a catastrophic degradation of the substrate. SiC and Si3N4 are not stable in pure H2 and decompose to silicon and gaseous species such as CH4, SiH, SiH4, N2, and NH3. Water vapor is known to slightly increase the oxidation rate of SiC and Si3N4. Refractory oxides such as alumina, yttria-stabilized zirconia, yttria and mullite (3Al2O3.2SiO2) possess excellent environmental durability in harsh conditions mentioned above. Therefore, refractory oxide coatings on silicon-base ceramics can substantially improve the environmental durability of these materials by acting as a chemical reaction barrier. These oxide coatings can also serve as a thermal barrier. The purpose of this research program has been to develop refractory oxide chemical/thermal barrier coatings on silicon-base ceramics to provide extended temperature range and lifetime to these materials in harsh environments.

Tewari, Surendra↗

Sintering silicon nitride

Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

Bansal, Narottam P.↗

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Opila, Elizabeth J.↗