Search NASA⌕ Search

SEARCH · Search NASA

Results for “SUPPRESSED CARRIERS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

14 SOLAR ENERGY↗
NASA NTRS1989

MT's algorithm: A new algorithm to search for the optimum set of modulation indices for simultaneous range, command, and telemetry

MT's algorithm was developed as an aid in the design of space telecommunications systems when utilized with simultaneous range/command/telemetry operations. This algorithm provides selection of modulation indices for: (1) suppression of undesired signals to achieve desired link performance margins and/or to allow for a specified performance degradation in the data channel (command/telemetry) due to the presence of undesired signals (interferers); and (2) optimum power division between the carrier, the range, and the data channel. A software program using this algorithm was developed for use with MathCAD software. This software program, called the MT program, provides the computation of optimum modulation indices for all possible cases that are recommended by the Consultative Committee on Space Data System (CCSDS) (with emphasis on the squarewave, NASA/JPL ranging system).

Nguyen, Tien Manh↗
NASA NTRS2008

Field Testing of High Current Electrokinetic Nanoparticle Treatment for Corrosion Mitigation in Reinforced Concrete

This work examines field performance of nanoscale pozzolan treatments delivered el ctrokinetically to suppress chloride induced corrosion of concrete reinforcement. The particles are 20 nm silica spheres coated with 2 nm alumina particles that carry a net positive charge. Earlier work demonstrated that the alumina particles were stripped from the silica carriers and formed a dense phase with an interparticle spacing that is small enough to inhibit the transport of solvated chlorides. A D.C. field was used to inject the particles into the pores of concrete specimens, directly toward the mild steel bars that were embedded within each 3 inch diameter by 6 inch length concrete specimen. The voltage was held constant at 25 v per inch of concrete cover for a period of 7 days. These voltages permitted current densities as high as 3 A/sq m. During the final 3 days, a 1 molar solution of calcium nitrate tetrahydrate was used to provide a source of calcium to facilitate stronger and more densified phase formation within the pores. In a departure from prior work the particle treatments were started concurrent with chloride extraction in order to determine if particle delivery would inhibit chloride transport. Following treatment the specimens were immersed in seawater for 4 weeks. After this posttreatment exposure, the specimens were tested for tensile strength and the steel reinforcement was examined for evidence of corrosion. Scanning electron microscopy was conducted to assess impact on microstructure.

Calle, Luz Marina↗
DOE OSTI2024

Spin transport of a doped Mott insulator in moiré heterostructures

Moiré superlattices of semiconducting transition metal dichalcogenide heterobilayers are model systems for investigating strongly correlated electronic phenomena. Specifically, WSe 2 /WS 2 moiré superlattices have emerged as a quantum simulator for the two-dimensional extended Hubbard model. Experimental studies of charge transport have revealed correlated Mott insulator and generalized Wigner crystal states, but spin transport of the moiré heterostructure has not yet been sufficiently explored. Here, we use spatially and temporally resolved circular dichroism spectroscopy to directly image the spin transport as a function of carrier doping and temperature in WSe 2 /WS 2 moiré heterostructures. We observe diffusive spin transport at all hole concentrations at 11 Kelvin — including the Mott insulator at one hole per moiré unit cell — where charge transport is strongly suppressed. At elevated temperatures the spin diffusion constant remains unchanged in the Mott insulator state, but it increases significantly at finite doping away from the Mott state. The doping- and temperature-dependent spin transport can be qualitatively understood using a t–J model, where spins can move via the hopping of spin-carrying charges and via the exchange interaction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2010

Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.

Zhao, Kai↗
NASA NTRS2003

Prototype Parts of a Digital Beam-Forming Wide-Band Receiver

Some prototype parts of a digital beamforming (DBF) receiver that would operate at multigigahertz carrier frequencies have been developed. The beam-forming algorithm in a DBF receiver processes signals from multiple antenna elements with appropriate time delays and weighting factors chosen to enhance the reception of signals from a specific direction while suppressing signals from other directions. Such a receiver would be used in the directional reception of weak wideband signals -- for example, spread-spectrum signals from a low-power transmitter on an Earth-orbiting spacecraft or other distant source. The prototype parts include superconducting components on integrated-circuit chips, and a multichip module (MCM), within which the chips are to be packaged and connected via special inter-chip-communication circuits. The design and the underlying principle of operation are based on the use of the rapid single-flux quantum (RSFQ) family of logic circuits to obtain the required processing speed and signal-to-noise ratio. RSFQ circuits are superconducting circuits that exploit the Josephson effect. They are well suited for this application, having been proven to perform well in some circuits at frequencies above 100 GHz. In order to maintain the superconductivity needed for proper functioning of the RSFQ circuits, the MCM must be kept in a cryogenic environment during operation.

Kaplan, Steven B.↗
DOE OSTI2021

Spread Spectrum Symbol Detection With Blind Interference Suppression in FBMC-SS

Recent works have demonstrated Filter Bank Multicarrier Spread Spectrum (FBMC-SS) to be a robust communication scheme in the presence of high-power interferers. Existing FBMC-SS symbol detector designs based on analysis filter banks (AFB) suggest using an optimal combining scheme to suppress the interferers, necessitating some noise/interference power estimation method. In this paper, we introduce a symbol detector with blind interference suppression by extending a recently developed packet detection method. We then provide an analysis to show that the existing AFB-based symbol detector and the one proposed in this paper are equivalent in typical usage scenarios. A fully-fledged receiver design is proposed utilizing this symbol detector, with specifics presented for estimation of the channel impulse response and carrier frequency offset (CFO). We also outline a method of iterating upon the channel and CFO estimations to improve the quality of both parameters. Moreover, a modification to allow improved performance of the symbol detector at high SNR is provided. Finally, simulated performance results are presented to corroborate these findings and demonstrate the efficiency of this receiver design.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2021

Superconductivity and electron-phonon interaction in Sr x Bi 2 Se 3 under pressure

Pressure-induced superconductivity has been widely explored and observed in Bi 2 Se 3 -based topological materials to hunt for topological superconductors. Although their triggered superconductivity has a close connection to their pressure-induced structural phase transitions, the quest for the electron pairing mechanism of these superconducting semiconductors in both their initial rhombohedral and high-pressure phases remains unknown. In this work, we present a systematic study of the pressure effect on superconducting properties and lattice dynamics using a combination of electrical transport, Raman-scattering, and synchrotron x-ray diffraction measurements using diamond anvil cells. One key finding is our observation of a cooperative connection between the strength of the electron–phonon interaction (EPI) generated by optical branches and the pressure-tunable superconductivity in rhombohedral Sr x Bi 2 Se 3 crystal. The underlying suppression mechanism of the T c by pressure is ascribed to the weakening of the electrons' interaction with the optical phonon modes in the rhombohedral phase. In the intermediate monoclinic phase, the T c value underwent a sharp increase with carrier density accumulation accompanying the concurrent enhanced EPI. This is intuitively unusual since it is expected that the EPI shall be weakened by inducing more conducting carriers in a normal metal. In the tetragonal phase, the superconductivity is interpreted within BCS theory, since it is fully metallized and obeys the adiabatic Born–Oppenheimer approximation well. Our findings are important to fully understand unconventional superconductivity and the unusual pairing mechanism in the layered rhombohedral Bi 2 Se 3 -based superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1986

Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

Vernon, S. M.↗
NASA NTRS2016

Mitochondrial Oxidative Stress: Importance for Skeletal Structure and Responses to Simulated Spaceflight

Spaceflight environment poses challenges to the human body. Both microgravity and radiation may lead to excess production of reactive oxygen species (ROS) and resulting oxidative stress and tissue damage. Specifically in bone, elevated ROS can contribute to excess bone resorption by osteoclasts over bone formation by osteoblasts, reduced viability of osteocytes, and ultimately, osteoporosis. Thus, we hypothesized that suppression of mitochondrial ROS in bone cells improves overall bone structure in the adult skeleton and skeletal defenses from spaceflight. To begin to test our hypothesis, we (1) modified ROS levels in bone cells using mCAT (Malonyl CoA-acyl carrier protein transacylase) mice, which overexpress the human anti-oxidant catalase gene targeted to the mitochondria. We also increased ROS and stimulated skeletal remodeling by exposing mice to simulated spaceflight (hindlimb-unloading and total body-irradiation) or sham treatment. When challenged with treatment, bones from wildtype mice showed elevated levels of oxidative damage whereas mCAT mice did not. Treatment caused expected bone loss in wildtype mice. Treatment caused deficits in microarchitecture of mCAT mice, although lower in magnitude than wildtype. In conclusion, our results indicate mitochondrial ROS generation in osteoblast and osteoclast lineage cells of skeletal tissue contributes to skeletal remodeling and quenching oxidative damage may improve the skeletal responses to spaceflight.

Radiation↗
NASA NTRS2011

Faraday-Active Fabry-Perot Resonator: Transmission, Reflection, and Emissivity

The propagation of light within a semiconductor Faraday-active Fabry-Perot resonator (FAFR) is investigated theoretically and experimentally. It is shown that an external magnetic field radically changes the angular and spectral characteristics of transmission, reflection and emissivity of the resonator not only for polarized, but also for unpolarized light. Suppression of interference patterns and phase inversion of the interference extrema were observed in both monochromatic and polychromatic light. The investigations were carried out for the plane-parallel plates of n-InAs in the spectral range of free charge carrier absorption. The results can be used to create new controllable optical and spectroscopic devices for investigation of Faraday-active material properties and for control of parameters of plane-parallel layers and structures.

Liptuga, Anatoliy↗
DOE OSTI2020

Electron-phonon drag enhancement of transport properties from a fully coupled ab initio Boltzmann formalism

We present a combined treatment of the nonequilibrium dynamics and transport of electrons and phonons by carrying out ab initio calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in the traditional semiconductor picture. Drag also strongly boosts the intrinsic electron mobility, thermal conductivity and the Lorenz number. Impurity scattering is seen to suppress the drag enhancement of the thermal and electrical conductivities, while having weak effects on the enhancement of the Lorenz number and thermopower. We demonstrate these effects in n-doped 3C-SiC at room temperature, and explain their origins. This work establishes the roles of microscopic scattering mechanisms in the emergence of strong drag effects in the transport of the interacting electron-phonon gas.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Blinking compromises the single-photon purity of individual CsPbBr 3 perovskite nanocrystals

Individual lead halide perovskite nanocrystals (PNCs) are promising single photon emitters but often suffer from photoluminescence blinking. Here, we correlate the photoluminescence blinking behavior of CsPbBr 3 NCs with their second-order correlation functions. We find that even moderate band-edge carrier blinking (BC-blinking) can significantly decrease the PNC’s single photon purity, while the impact from Auger blinking is much smaller. Additionally, the degree of BC-blinking can introduce significant uncertainties in single photon purity compared to PNCs with suppressed blinking. Furthermore, we quantitatively correlate the decrease in single photon purity with BC-blinking severity.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Mechanical, Morphological, and Charge Transport Properties of NDI Polymers with Variable Built‐in Π‐Conjugation Lengths Probed by Simulation and Experiment

Abstract Mechanically deformable polymeric semiconductors are a key material for fabricating flexible organic thin‐film transistors (FOTFTs)—the building block of electronic circuits and wearable electronic devices. However, for many π‐conjugated polymers achieving mechanical deformability and efficient charge transport remains challenging. Here the effects of polymer backbone bending stiffness and film microstructure on mechanical flexibility and charge transport are investigated via experimental and computational methods for a series of electron‐transporting naphthalene diimide (NDI) polymers having differing extents of π‐conjugation. The results show that replacing increasing amounts of the π‐conjugated comonomer dithienylvinylene (TVT) with the π‐nonconjugated comonomer dithienylethane (TET) in the backbone of the fully π‐conjugated polymeric semiconductor, PNDI‐TVT 100 (yielding polymeric series PNDI‐TVT x , 100 ≥x≥ 0), lowers backbone rigidity, degree of texturing, and π–π stacking interactions between NDI moieties. Importantly, this comonomer substitution increases the mechanical robustness of PNDI‐TVT x while retaining efficient charge transport. Thus, reducing the TVT content of PNDI‐TVT x suppresses film crack formation and dramatically stabilizes the field‐effect electron mobility upon bending (e.g., 2 mm over 2000 bending cycles). This work provides a route to tune π–π stacking in π‐conjugated polymers while simultaneously promoting mechanical flexibility and retaining good carrier mobility in FOTFTs.

Chemistry↗
DOE OSTI2023

Strain effects on Auger–Meitner recombination in silicon

We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger–Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. In conclusion, our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon and can be leveraged to improve the efficiency of silicon devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

The quantum efficiency of AlGaN ultraviolet light-emitting diodes declines (droops) at increasing operating powers due to Auger–Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron–phonon coupling and alloy disorder can induce bulk C coefficients as large as ~10 –31 cm 6 /s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. Furthermore, this results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Space charge trap-assisted recombination suppressing layer for low-voltage diode operation

Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.

Santhanam, Parthiban↗