Search NASA⌕ Search

SEARCH · Search NASA

Results for “Se(OF)2”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction

Bandgap gradient is a proven approach for improving the open-circuit voltages (V OC s) in Cu(In,Ga)Se 2 and Cu(Zn,Sn)Se 2 thin-film solar cells, but has not been realized in Cd(Se,Te) thin-film solar cells, a leading thin-film solar cell technology in the photovoltaic market. Here, we demonstrate the realization of a bandgap gradient in Cd(Se,Te) thin-film solar cells by introducing a Cd(O,S,Se,Te) region with the same crystal structure of the absorber near the front junction. The formation of such a region is enabled by incorporating oxygenated CdS and CdSe layers. We show that the introduction of the bandgap gradient reduces the hole density in the front junction region and introduces a small spike in the band alignment between this and the absorber regions, effectively suppressing the nonradiative recombination therein and leading to improved VOCs in Cd(Se,Te) solar cells using commercial SnO 2 buffers. A champion device achieves an efficiency of 20.03% with a V OC of 0.863 V.

14 SOLAR ENERGY↗
DOE OSTI2022

Observation of nonlinear planar Hall effect in magnetic-insulator–topological-insulator heterostructures

Interfacing topological insulators (TIs) with magnetic insulators (MIs) have been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of the magnetic proximity effect (MPE) imposed to TIs. Here, in this work, we report the observation of the nonlinear planar Hall effect (NPHE) in Bi 2 ⁢Se 3 films grown on MI thulium and yttrium-iron-garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi 2 ⁢Se 3 grown on nonmagnetic gadolinium-gallium-garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi 2 ⁢Se 3 depends linearly on the external magnetic field, while that in YIG/Bi 2 ⁢Se 3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate that the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Quantum oscillation studies of the nodal line semimetal Ni 3 In 2 S 2-x Se x

Ternary shandite compounds with the general formula T 3 M 2 X 2 (T = Ni, Co, Rh or Pd; M = Sn, In, or Pb; and X = S or Se) have emerged as a large pool of topological semimetals. This family of compounds hosts different topological phases for various combinations of T, M and X. This paper reports the observation of quantum oscillations under the high magnetic fields in Ni 3 In 2 S 2-x Se x single crystals. Angular dependence of oscillation frequency suggests an evolution of the Fermi surface from three-dimensional to two-dimensional on Se substitution for S in Ni 3 In 2 S 2 . Here, the effective mass obtained for each composition by fitting the oscillation amplitude with the Lifshitz-Kosevich formula, shows no significant change, suggesting that the topological phase might be relatively robust against enhanced spin-orbit coupling upon Se doping in Ni 3 In 2 S 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Insights into hyperbolic phonon polaritons in h – BN using Raman scattering from encapsulated transition metal dichalcogenide layers

Alternative techniques for probing hyperbolic phonon polaritons (HPPs) in two-dimensional materials will support the development of the emerging technologies in this field. Previous reports have shown that it is possible for W Se 2 monolayers in contact with the hexagonal boron nitride (h– BN) to generate HPPs in the h– BN via Raman scattering. In this paper, we set out our results on HPP Raman scattering induced in h– BN by W Se 2 and Mo Se 2 monolayers including multiple resonances at which the Raman scattering is enhanced. Analysis of the observed Raman line shapes demonstrates that Raman scattering allows HPPs with wave vectors with magnitudes significantly in excess of 15 000 cm –1 to be probed. Finally, we present evidence that the Raman scattering can probe HPPs with frequencies less than the expected lower bound on the reststrahlen band, suggesting new HPP physics still waits to be discovered.

2-dimensional systems↗
DOE OSTI2020

A native oxide high-κ gate dielectric for two-dimensional electronics

Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO 2 ) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi 2 SeO 5 ) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi 2 O 2 Se. Using this native oxide dielectric, high-performance Bi 2 O 2 Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (~21) of Bi 2 SeO 5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO 2 . The Bi 2 SeO 5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi 2 O 2 Se semiconductor almost unchanged.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Transport anomalies in the layered compound BaPt 4 Se 6

We report a layered ternary selenide BaPt 4 Se 6 featuring sesqui-selenide Pt 2 Se 3 layers sandwiched by Ba atoms. The Pt 2 Se 3 layers in this compound can be derived from the Dirac-semimetal PtSe 2 phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt (II) mixed-valence compound with both PtSe 6 octahedra and PtSe 4 square net coordination configurations. Temperature-dependent electrical transport measurements suggest two distinct anomalies: a resistivity crossover, mimic to the metal-insulator (M-I) transition at ~150 K, and a resistivity plateau at temperatures below 10 K. The resistivity crossover is not associated with any structural, magnetic, or charge order modulated phase transitions. Magnetoresistivity, Hall, and heat capacity measurements concurrently suggest an existing hidden state below 5 K in this system. Angle-resolved photoemission spectroscopy measurements reveal a metallic state and no dramatic reconstruction of the electronic structure up to 200 K.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Influence of tungsten doping on nonradiative electron–hole recombination in monolayer MoSe 2 with Se vacancies

Two-dimensional transition metal dichalcogenides (TMDs) are receiving significant attention due to their excellent electronic and optoelectronic properties. The material quality is greatly affected by defects that are inevitably generated during material synthesis. Focusing on chalcogenide vacancies, which constitute the most common defect, we use the state-of-the-art simulation methodology developed in our group to demonstrate that W doping of MoSe 2 with Se vacancies reduces charge carrier losses by two mechanisms. First, W doping makes the formation of double Se vacancies unfavorable, while it is favorable in undoped MoSe 2 . Second, if a Se vacancy is present, the charge carrier lifetimes are extended in the W-doped MoSe 2 . Combining ab initio real-time time-dependent density functional theory with nonadiabatic molecular dynamics, the simulations show that the nonradiative carrier losses in the presence of Se vacancies proceed by sub-10 ps electron trapping and relaxation down the manifold of trap states, followed by a 100 ps recombination of trapped electrons with free holes. The electron–vibrational energy exchange is driven by both in-plane and out-of-plane vibrational motions of the MoSe 2 layer. Additionally, the atomistic studies advance our understanding of the influence of defects on charge carrier properties in TMDs and guide improvements of material quality and development of TMD applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Strong long-wavelength electron-phonon coupling in Ta 2 ⁢Ni⁡(Se,S) 5

The search for intrinsic excitonic insulators (EI) has long been confounded by coexisting electron–phonon coupling in bulk materials. Although the ground state of an EI may be difficult to differentiate from density-wave orders or other structural instabilities, excited states offer distinctive signatures. One way to provide clarity is to directly inspect the phonon spectral function for long wavelength broadening caused by phonon interaction with the high velocity EI phason. Here, in this study, we report that the quasi-one-dimensional (quasi-1D) EI candidate Ta 2 NiSe 5 shows extremely anisotropic phonon broadening and softening in the semimetallic normal state. In contrast, such behavior is completely absent in the broken symmetry state of Ta 2 NiSe 5 and in the isostructural Ta 2 NiS 5 , where the latter has a fully gapped normal state. By contrasting the expected phonon lifetimes in the BCS and BEC limits of a putative EI, our results suggest that the phase transition in Ta 2 Ni(Se,S) 5 family is closely related to strong interband electron–phonon coupling. We experimentally determine the dimensionless coupling $\frac{g}{ω_0}$ ∼ 10, revealing Ta 2 Ni(Se,S) 5 as a rare “ultrastrong coupling” material.

Kang, Zhibo [Yale University, New Haven, CT (Unite↗
DOE OSTI2023

Monolayer Superconductivity and Tunable Topological Electronic Structure at the Fe(Te,Se)/Bi 2 Te 3 Interface

The interface between 2D topological Dirac states and an s-wave superconductor is expected to support Majorana-bound states (MBS) that can be used for quantum computing applications. Realizing these novel states of matter and their applications requires control over superconductivity and spin-orbit coupling to achieve spin-momentum-locked topological interface states (TIS) which are simultaneously superconducting. While signatures of MBS have been observed in the magnetic vortex cores of bulk FeTe 0.55 Se 0.45 , inhomogeneity and disorder from doping make these signatures unclear and inconsistent between vortices. In this work, superconductivity is reported in monolayer (ML) FeTe 1–y Se y (Fe(Te,Se)) grown on Bi 2 Te 3 by molecular beam epitaxy (MBE). Spin and angle-resolved photoemission spectroscopy (SARPES) directly resolve the interfacial spin and electronic structure of Fe(Te,Se)/Bi 2 Te 3 heterostructures. For y = 0.25, the Fe(Te,Se) electronic structure is found to overlap with the Bi 2 Te 3 TIS and the desired spin-momentum locking is not observed. In contrast, for y = 0.1, reduced inhomogeneity measured by scanning tunneling microscopy (STM) and a smaller Fe(Te,Se) Fermi surface with clear spin-momentum locking in the topological states are found. Hence, it is demonstrated that the Fe(Te,Se)/Bi 2 Te 3 system is a highly tunable platform for realizing MBS where reduced doping can improve characteristics important for Majorana interrogation and potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of Arsenic and Selenium in Coal Fly Ash to Improve Evaluations for Disposal and Reuse Potential (Final Technical Report)

Coal fly ash is a high volume waste material that is discarded in landfills and surface water impoundments across the U.S. and is also widely recycled for a variety of applications. The leaching of potential of contaminants of concern, such as arsenic (As) and selenium (Se), is often the driver of risk assessments for coal ash disposal and reuse. The extent of leachable As and Se depends on several factors related to environmental conditions and fly ash characteristics. Previous studies employed various methods to delineate the concentration, chemical form, and distribution of As and Se in fly ash materials. However, few studies have attempted to directly correlate these properties to mobilization parameters relevant to disposal and reuse. Instead, the coal residuals industries often rely upon standardized leaching protocols that can be laborious or involve hazardous chemicals. The goals of the project were to: 1) Develop and evaluate a characterization protocol that can be used to screen fly ash samples for leachability of As and Se; 2) Characterize As, Se, and associated constituents of fly ash particles at multiple length scales (nanometer to micrometer) to determine if elemental associations differ as a function of the resolution of characterization; and 3) Establish a predictive model for the chemical composition of coal ash produced annually at major U.S. coal fired power facilities on 50-year national coal supply records. For the first objective, we performed leaching experiments with 52 fly ash samples collected from 15 different U.S. power plants and representing coal feedstocks from the three major domestic coal regions. For this work, we assessed the mobilization potential of As and Se in fly ash based on standardized leaching protocols and performed multivariate and lasso regression analyses to explore correlations of leachable As and Se contents with characteristics such as major element contents, loss on ignition (LOI) and pH. The results of regression models indicated that major elements (Fe, Ca, Al) for a wide range of fly ashes can serve as predictor variables for the leaching potential of As, but not for Se. LOI and pH were not important predictive variables in the models. Both regression approaches resulted in relatively strong fits for leachable As (correlation coefficient R 2 = 0.78 for both models) compared to models for leachable Se (R 2 = 0.49). Overall, these results suggest that correlation models combined with on-site elemental analysis with portable analyzers may enable a screening method for leachable As in coal ash. For the second objective, we utilized nanoscale 2-D imaging (30-50 nm spot size) with the Hard X-ray Nanoprobe (HXN) in combination with microprobe X-ray capabilities (~5 µm resolution) to determine As and Se elemental associations in fly ash particles. Speciation of As and Se was also measured at the nano- to microscale with X-ray absorption spectroscopy. The enhanced resolution of HXN showed As and Se that were diffusely located around or comingled with Ca- and Fe-rich particles. The results also showed nanoparticles of Se attached to the surface of fly ash grains. Overall, a comparison of As and Se species across scales highlights the heterogeneity and complexity of chemical associations for these trace elements of concern in coal fly ash. For the final objective, we developed a predictive model for major element composition of coal ash in reserve at disposal sites of major U.S. coal fired power plants. This model was constructed from coal purchase records of 705 power stations from 1973-2022 and was trained on coal ash composition data showing that coal ash elemental composition is strongly associated with the source of feedstock coal. The model showed regional shifts in the major element contents of ash produced by power plants in the last 50 years, particularly for calcium and iron (expressed as %CaO and %Fe 2 O 3 ), as coal-fired power stations changed their source of coal over this time frame. Our approach enables an estimation of coal ash chemical composition that is stored in waste impoundments at individual power stations. Such information can help delineate the regional market potential for material applications that would utilize coal ash harvested from disposal sites across the U.S.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2020

Thermoelectric properties of antimony selenide hexagonal nanotubes

Antimony selenide (Sb 2 Se 3 ) is a material widely used in photodetectors and relatively new as a possible material for thermoelectric applications. Taking advantage of the new properties after nanoscale fabrication, this material shows great potential for the development of efficient low temperature thermoelectric devices. Here, for this paper, we study the synthesis, the crystal properties and the thermal and thermoelectric transport response of Sb 2 Se 3 hexagonal nanotubes (HNT) in the temperature range between 120 and 370 K. HNT have a moderate electrical conductivity ~10 2 S m -1 while maintaining a reasonable Seebeck coefficient ~430 μV K -1 at 370 K. The electrical conductivity in Sb 2 Se 3 HNT is about 5 orders of magnitude larger and its thermal conductivity one half of what is found in bulk. Moreover, the calculated figure of merit (ZT) at room temperature is the largest value reported in antimony selenide 1D structures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Nematic order driven by superconducting correlations

The interplay of nematicity and superconductivity has been observed in a wide variety of quantum materials. To explore this interplay, we consider a two-dimensional (2D) array of nematogens, local droplets with Z 3 nematicity, coupled to a network of Josephson junction wires. Using finite temperature classical Monte Carlo simulations, we elucidate the phase diagram of this model and show that the development of superconducting correlations and the directional delocalization of Cooper pairs can promote nematogen ordering, resulting in long-range nematic order. We obtain the transport properties of our model within an effective resistor network picture. We discuss these ideas in the context of the 2D electron gas at the (111) KTaO 3 interface and the doped topological insulators Nb x Bi 2 Se 3 and Cu x Bi 2 Se 3 . Overall, our work makes contact with Phil Anderson’s numerous contributions to broken symmetries driven by the saving of kinetic energy, including double exchange ferromagnetism and the interlayer tunneling theory of high Tc csuperconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2014

Comparison of the Variations of Sunspot Number, Number of Sunspot Groups, and Sunspot Area, 1875 -2013

Examined are the yearly variations and ratios of sunspot number, the number of sunspot groups, and the total corrected sunspot area for the interval 1875-2013. While yearly sunspot number independently correlates strongly (r = 0.98) with the yearly number of sunspot groups (y = -2 + 11.99x) and the total corrected sunspot area (y = 5 + 0.059x), the strongest correlation (Ry12 = 0.99) is the one based on the bivariate fit of sunspot number against the combined variations of the number of sunspot groups and sunspot area (y = 1 + 5.88x1 + 0.031x2, where y refers to sunspot number, x1 refers to the number of sunspot groups, and x2 refers to the sunspot area). While all cycle minima based on the bivariate fit are concurrent with the observed minimum in sunspot number, cycle maxima are sometimes found to differ. For sunspot cycles 12, 19, 20, and 23, cycle maximum is inferred to have occurred in 1884, 1958, 1970, and 2002, respectively, rather than in 1883, 1957, 1968, and 2000, based on the observed sunspot number. Also, cycle 19's maximum amplitude based on observed sunspot number seems too high in comparison to that found using the bivariate fit. During the 139-year interval 1875-2013, the difference between the observed and predicted sunspot number based on the bivariate fit is <1 standard error of estimate (se) (<6.4) for 111 years, between 1 and <2 se (6.4 to <12.8) for 28 years, and ≥2 se (≥12.8) for only 4 years, these years being 1957 (16.6), 1978 (-15.8), 1980 (23), and 1982 (-16.3). For sunspot cycle 24, the difference between observed and predicted values has been only -0.7 and 3.2 (≤0.5 se).

Wilson, Robert M.↗
DOE OSTI2023

Exchange coupling in $\mathrm{Bi_2}$ $\mathrm{Se_3}$ / $\mathrm{EuSe}$ heterostructures and evidence of interfacial antiferromagnetic order formation

Spatial confinement of electronic topological surface states (TSSs) in topological insulators poses a formidable challenge because TSSs are protected by time-reversal symmetry. In previous works formation of a gap in the electronic spectrum of TSSs has been successfully demonstrated in topological insulator/magnetic material heterostructures, where ferromagnetic exchange interactions locally lift the time-reversal symmetry. Here we report experimental evidence of exchange interaction between a topological insulator $\mathrm{Bi_2}$ $\mathrm{Se_3}$ and a magnetic insulator EuSe. Spin-polarized neutron reflectometry reveals a reduction of the in-plane magnetic susceptibility within a 2 nm interfacial layer of EuSe, and the combination of superconducting quantum interference device (SQUID) magnetometry and Hall measurements points to the formation of an interfacial layer with a suppressed net magnetic moment. This suppressed magnetization survives up to temperatures five times higher than the Néel temperature of EuSe. Its origin is attributed to the formation of an interfacial antiferromagnetic state. Abrupt resistance changes observed in high magnetic fields are consistent with antiferromagnetic domain reconstruction affecting transport in a TSS via exchange coupling. Importantly, the high-temperature local control of TSSs with zero net magnetization unlocks new opportunities for the design of electronic, spintronic, and quantum computation devices, ranging from quantization of Hall conductance in zero fields to spatial localization of non-Abelian excitations in superconducting topological qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Mexican-hat potential energy surface in two-dimensional III 2 -VI 3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change

First-principles calculations reveal a Mexican-hat potential energy surface (PES) for two-dimensional (2D) In 2 Se 3 . This unique PES leads to a pseudo-centrosymmetric paraelectric β phase that resolves the current controversy between theory and experiment. We further show that while the α-to-β (ferroelectric-to-paraelectric) phase transition is fast and coherent, assisted by an in-plane shear phonon mode, a random distribution of the atoms in the trough of the PES acts as an entropy barrier against the reverse β-to-α transition. This will be the origin of the speed limitation of current In 2 Se 3 ferroelectric devices. Furthermore, if one orders the β phase (due to the formation of in-plane ferroelectric domains), the reverse transition can take place within tens of picoseconds in the presence of a perpendicular electric field. Finally, the Mexican-hat PES is a general feature for the entire family of 2D III 2 -VI 3 materials. Our finding offers a critical physical picture in controlling the ultrafast reversible phase transition in 2D In 2 Se 3 and other III 2 -VI 3 materials, which will benefit their practical industrial development for advanced ferroelectric devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Two-dimensional (2D) semiconducting multiferroics that can effectively couple magnetic and polarization (P) orders have great interest for both fundamental research and technological applications in nanoscale, which are, however, rare in nature. In this work, we propose a general mechanism to realize semiconducting 2D multiferroics via van der Waals (vdW) heterojunction engineering, as demonstrated in a typical heterostructure consisting of magnetic bilayer CrI 3 (bi-CrI 3 ) and ferroelectric monolayer In 2 Se 3 . Interestingly, the novel indirect orbital coupling between Se 4p and Cr 3d orbitals, intermediated by the interfacial I 5p orbitals, is switchable in the opposite P configurations, resulting in an unexpected mechanism of strong asymmetrical magnetoelectric coupling. Therefore, along with the noticeable ferroelectric energy barrier induced by In 2 Se 3 , the realization of opposite magnetic orders in opposite P configurations can eventually result in the novel multiferroicity in bi– CrI 3 /In 2 Se 3 . Finally, we demonstrate that our mechanism can generally be applied to design other vdW multiferroics even with tunable layer thickness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Direct observation of kink evolution due to Hund’s coupling on approach to metal-insulator transition in NiS 2- x Se x

Understanding characteristic energy scales is a fundamentally important issue in the study of strongly correlated systems. In multiband systems, an energy scale is affected not only by the effective Coulomb interaction but also by the Hund’s coupling. Direct observation of such energy scale has been elusive so far in spite of extensive studies. Here, we report the observation of a kink structure in the low energy dispersion of NiS 2- x Se x and its characteristic evolution with x , by using angle resolved photoemission spectroscopy. Dynamical mean field theory calculation combined with density functional theory confirms that this kink originates from Hund’s coupling. We find that the abrupt deviation from the Fermi liquid behavior in the electron self-energy results in the kink feature at low energy scale and that the kink is directly related to the coherence-incoherence crossover temperature scale. Our results mark the direct observation of the evolution of the characteristic temperature scale via kink features in the spectral function, which is the hallmark of Hund’s physics in the multiorbital system.

36 MATERIALS SCIENCE↗