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At least 217 records · Page 12

A Smoothed Boundary Condition for Reducing Nonphysical Field Effects

In this paper, we examine the problem associated with abruptly mixing boundary conditions in the context of a two-dimensional semiconductor device simulator. Explicitly, this paper addresses the transition between an ohmic-type Dirichlet condition and a passivated Neumann boundary. In the traditional setting, the details or the transition between the two boundary types are not addressed and an abrupt transition is assumed. Subsequently, the calculated observables (most notably the potential) exhibit discontinuous derivatives near the surface at the point where the boundary type switches. This paper proposes an alternative condition which models the progression between the two boundary types through the use of a finite length, smoothed boundary whereby the numerical discontinuities are eliminated. The physical and mathematical basis for this smoothed boundary condition is discussed and examples of the technique's implementation given. It is found that the proposed boundary condition is numerically efficient and can be implemented in pre-existing device simulators with relative ease.

Smith, Arlynn W.↗

A Study of the Degradation of Electronic Speed Controllers for Brushless DC Motors

Brushless DC motors are frequently used in electric aircraft and other direct drive applications. As these motors are notactually direct current machines but synchronous alternating current machines; they are electronically commutated by a power inverter. The power inverter for brushless DC motors typically used in small scale UAVs is a semiconductor base delectronic commutator that is external to the motor and is referred to as an electronic speed control (ESC). This paper examines the performance changes of a UAV electric propulsion system resulting from ESC degradation. ESC performance is evaluated in simulation and on a new developed test bed featuring propulsion components from a reference UAV. An increase in the rise fall times of the switched voltages is expected to cause timing issues at high motor speeds. This study paves the way for further development of diagnostic and prognostic methods for inverter circuits which are part of the overall electric UAV system.

Gorospe, George E., Jr.↗

Description of a 20 Kilohertz power distribution system

A single phase, 440 VRMS, 20 kHz power distribution system with a regulated sinusoidal wave form is discussed. A single phase power system minimizes the wiring, sensing, and control complexities required in a multi-sourced redundantly distributed power system. The single phase addresses only the distribution link; mulitphase lower frequency inputs and outputs accommodation techniques are described. While the 440 V operating potential was initially selected for aircraft operating below 50,000 ft, this potential also appears suitable for space power systems. This voltage choice recognizes a reasonable upper limit for semiconductor ratings, yet will direct synthesis of 220 V, 3 power. A 20 kHz operating frequency was selected to be above the range of audibility, minimize the weight of reactive components, yet allow the construction of single power stages of 25 to 30 kW. The regulated sinusoidal distribution system has several advantages. With a regulated voltage, most ac/dc conversions involve rather simple transformer rectifier applications. A sinusoidal distribution system, when used in conjunction with zero crossing switching, represents a minimal source of EMI. The present state of 20 kHz power technology includes computer controls of voltage and/or frequency, low inductance cable, current limiting circuit protection, bi-directional power flow, and motor/generator operating using standard induction machines. A status update and description of each of these items and their significance is presented.

Hansen, I. G.↗

Description of a 20 kilohertz power distribution system

A single phase, 440 VRMS, 20 kHz power distribution system with a regulated sinusoidal wave form is discussed. A single phase power system minimizes the wiring, sensing, and control complexities required in a multi-sourced redundantly distributed power system. The single phase addresses only the distribution links multiphase lower frequency inputs and outputs accommodation techniques are described. While the 440 V operating potential was initially selected for aircraft operating below 50,000 ft, this potential also appears suitable for space power systems. This voltage choice recognizes a reasonable upper limit for semiconductor ratings, yet will direct synthesis of 220 V, 3 power. A 20 kHz operating frequency was selected to be above the range of audibility, minimize the weight of reactive components, yet allow the construction of single power stages of 25 to 30 kW. The regulated sinusoidal distribution system has several advantages. With a regulated voltage, most ac/dc conversions involve rather simple transformer rectifier applications. A sinusoidal distribution system, when used in conjunction with zero crossing switching, represents a minimal source of EMI. The present state of 20 kHz power technology includes computer controls of voltage and/or frequency, low inductance cable, current limiting circuit protection, bi-directional power flow, and motor/generator operating using standard induction machines. A status update and description of each of these items and their significance is presented.

Hansen, I. G.↗

Microwave integrated circuits for space applications

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Leonard, Regis F.↗

Flexible Electrostatic Technologies for Capture and Handling, Phase 1

Fundamental to many of NASA's in-space transportation missions is the capture and handling of various objects and vehicles in various orbits for servicing, debris disposal, sample retrieval, and assembly without the benefit of sufficient grapple fixtures and docking ports. To perform similar material handling tasks on Earth, pincher grippers, suction grippers, or magnetic chucks are used, but are unable to reliably grip aluminum and composite spacecraft, insulation, radiators, solar arrays, or extra-terrestrial objects in the vacuum of outer space without dedicated handles in the right places. The electronic Flexible Electrostatic Technologies for space Capture and Handling (FETCH) will enable reliable and compliant gripping (soft dock) of practically any object in various orbits or surfaces without dedicated mechanical features, very low impact capture, and built-in proximity sensing without any conventional actuators. Originally developed to handle semiconductor and glass wafers during vacuum chamber processing without contamination, the normal rigid wafer handling chucks are replaced with thin metal foil segments laminated in flexible insulation driven by commercial off-the-shelf solid state, high-voltage power supplies. Preliminary testing in NASA Marshall Space Flight Center's (MSFC's) Flat Floor Robotics Lab demonstrated compliant alignment and gripping with a full-sized, 150-lb microsat mockup and translation before a clean release with a flip of a switch. The flexible electrostatic gripper pads can be adapted to various space applications with different sizes, shapes, and foil electrode layouts even with openings through the gripper pads for addition of guidance sensors or injection of permanent adhesives. With gripping forces estimated between 0.5 and 2.5 lb/in2 or 70-300 lb/ft2 of surface contact, the FETCH can turn on and off rapidly and repeatedly to enable sample handling, soft docking, in-space assembly, precision relocation, and surface translation for accurate anchoring.

Bryan, Thomas↗

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗

Optical memory development. Volume 3: The membrane light value page composer

The feasibility of producing a page composer for optical memory systems using thin, deformable, membrane-mirror elements as light valves was investigated. The electromechanical and optical performances of such elements were determined both analytically and experimentally. It was found that fast switching (approximately 10 microseconds), high-contrast (10 or greater), fatigue-free operation over missions of cycles, and efficient utilization of input light could be obtained with membrane light valves. Several arrays of 64 elements were made on substrates with feedthroughs, allowing access to individual elements from the backside of the substrate. Single light valves on such arrays were successfully operated with the transistors designed and produced for selection and storage at each bit location. This simulated the operation of a prototype page composer with semiconductor chips beam-lead bonded to the back of the substrate.

Cosentino, L. S.↗

Coherent lightwave communications; Proceedings of the Meeting, Boston, MA, Sept. 7, 8, 1989

Various papers on coherent lightwave communications are presented. Individual topics addressed include: overview of coherent light wave communications, frequency stabilization techniques for coherent lightwave systems, characterization of laser diode intensity noise at microwave frequencies with high sensitivity, FP and DFB semiconductor lasers with arbitrary external optical feedback, birefringence-controlled phase-shifter, polarization diversity and scrambling techniques for coherent systems, polarization control scheme for coherent optical systems, simulation of IF filtering effects on the performance of coherent optical receivers. Also discussed are: performance of optical DPSK receivers in the presence of optical channel noise, optical heterodyne communications with polarization modulation, coherent fiber optical subcarrier multiplexed system, engineered rack-mounted coherent transmission system, technology aspects of a coherent optical MAN, broadband exchange by coherent multicarrier switching, generalized temporal CDMA for optical communications. Overviews are given of recent progress at individual companies.

Sunak, Harish R. D.↗

Investigation of superconducting interactions and amorphous semiconductors

Research papers on superconducting interactions and properties and on amorphous materials are presented. The search for new superconductors with improved properties was largely concentrated on the study of properties of thin films. An experimental investigation of interaction mechanisms revealed no new superconductivity mechanism. The properties of high transition temperature, type 2 materials prepared in thin film form were studied. A pulsed field solenoid capable of providing fields in excess of 300 k0e was developed. Preliminary X-ray measurements were made of V3Si to determine the behavior of cell constant deformation versus pressure up to 98 kilobars. The electrical properties of amorphous semiconducting materials and bulk and thin film devices, and of amorphous magnetic materials were investigated for developing radiation hard, inexpensive switches and memory elements.

Janocko, M. A.↗

Effects of Temperature on the Performance and Stability of Recent COTS Silicon Oscillators

Silicon oscillators have lately emerged to serve as potential replacement for crystal and ceramic resonators to provide timing and clock signals in electronic systems. These semiconductor-based devices, including those that are based on MEMS technology, are reported to be resistant to vibration and shock (an important criteria for systems to be deployed in space), immune to EMI, consume very low current, require few or no external components, and cover a wide range of frequency for analog and digital circuits. In this work, the performance of five recently-developed COTS silicon oscillator chips from different manufacturers was determined within a temperature range that extended beyond the individual specified range of operation. In addition, restart capability at extreme temperatures, i.e. power switched on while the device was soaking at extreme (hot or cold) temperature, and the effects of thermal cycling under a wide temperature range on the operation of these silicon oscillators were also investigated. Performance characterization of each oscillator was obtained in terms of its output frequency, duty cycle, rise and fall times, and supply current at specific test temperatures. The five different oscillators tested operated beyond their specified temperature region, with some displaying excellent stability throughout the whole test temperature range. Others experienced some instability at certain temperature test points as evidenced by fluctuation in the output frequency. Recovery from temperature-induced changes took place when excessive temperatures were removed. It should also be pointed out that all oscillators were able to restart at the extreme test temperatures and to withstand the limited thermal cycling without undergoing any significant changes in their characteristics. In addition, no physical damage was observed in the packaging material of any of these silicon oscillators due to extreme temperature exposure and thermal cycling. It is recommended that additional and more comprehensive testing under long term cycling be carried out to fully establish the reliability of these devices and to determine their suitability for use in space exploration missions under extreme temperature conditions.

Patterson, Richard L.↗

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Neudeck, Philip G.↗

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗

Every Good Virtue You Ever Wanted in a Q-switched Solid-state Laser and More: Monolithic, Diode-pumped, Self-q-switched, Highly Reproducible, Diffraction-limited Nd:yag Laser

The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.

Chen, Y. C.↗

Carbon-Based Nano-Electro-Mechanical-Systems

We provide an overview of our work where carbon-based nanostructures have been applied to two-dimensional (2D) planar and three-dimensional (3D) vertically-oriented nano-electro-mechanical (NEM) switches. In the first configuration, laterally oriented single-walled nanotubes (SWNTs) synthesized using thermal chemical vapor deposition (CVD) were implemented for forming bridge-type 2D NEMS switches, where switching voltages were on the order of a few volts. In the second configuration, vertically oriented carbon nanofibers (CNFs) synthesized using plasma-enhanced (PE) CVD have been explored for their potential application in 3D NEMS. We have performed nanomechanical measurements on such vertically oriented tubes using nanoindentation to determine the mechanical properties of the CNFs. Electrostatic switching was demonstrated in the CNFs synthesized on refractory metallic nitride substrates, where a nanoprobe was used as the actuating electrode inside a scanning-electron-microscope. The switching voltages were determined to be in the tens of volts range and van der Waals interactions at these length scales appeared significant, suggesting such structures are promising for nonvolatile memory applications. A finite element model was also developed to determine a theoretical pull-in voltage which was compared to experimental results.

Complementary-Metal-Oxide-Semiconductor (CMOS)↗

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗