Search NASA⌕ Search

SEARCH · Search NASA

Results for “Si integration”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

Adoption of a token-based authentication model for the CMS Submission Infrastructure

The CMS Submission Infrastructure (SI) is the main computing resource provisioning system for CMS workloads. A number of HTCondor pools are employed to manage this infrastructure, which aggregates geographically distributed resources from the WLCG and other providers. Historically, the model of authentication among the diverse components of this infrastructure has relied on the Grid Security Infrastructure (GSI), based on identities and X509 certificates. In contrast, commonly used modern authentication standards are based on capabilities and tokens. The WLCG has identified this trend and aims at a transparent replacement of GSI for all its workload management, data transfer and storage access operations, to be completed during the current LHC Run 3. As part of this effort, and within the context of CMS computing, the Submission Infrastructure group is in the process of phasing out the GSI part of its authentication layers, in favor of IDTokens and Scitokens. The use of tokens is already well integrated into the HTCondor Software Suite, which has allowed us to fully migrate the authentication between internal components of SI. Additionally, recent versions of the HTCondor-CE support tokens as well, enabling CMS resource requests to Grid sites employing this CE technology to be granted by means of token exchange. After a rollout campaign to sites, successfully completed by the third quarter of 2022, the totality of HTCondor CEs in use by CMS are already receiving Scitoken-based pilot jobs. On the ARC CE side, a parallel campaign was launched to foster the adoption of the REST interface at CMS sites (required to enable token-based job submission via HTCondor-G), which is nearing completion as well. In this contribution, the newly adopted authentication model will be described. We will then report on the migration status and final steps towards complete GSI phase out in the CMS SI.

Pérez-Calero Yzquierdo, Antonio↗

Topological Considerations in Electrolyte Additives for Passivating Silicon Anodes with Hybrid Solid–Electrolyte Interphases

Unlike most anodes used in high energy density batteries, lithiated Si does not form long-lasting passivating solid-electrolyte interphases (SEI) during formation or on charge due to SEI delamination, reconstruction, or dissolution. As a result, electrolyte degradation is continuous and results in a permanent loss of the Li inventory, shortening the useful life of the battery. Here, in this study, we show that perfluoroether electrolyte additives featuring either sulfonyl fluorides or trifluorovinyl ethers, when introduced in prescribed amounts to locally superconcentrated electrolytes, exhibit preferential reactivity at Si during formation due to their higher reduction potential than salts and solvents, creating a hybrid SEI that is simultaneously enriched with LiF and organics tethered to the reactive functionality. While both reactive motifs are effective in creating a hybrid SEI, perfluoroether additives bearing sulfonyl fluorides show more substantial integration. More important, however, is the combined influence of additive topology on anchoring efficacy and tether flexibility between anchoring sites on SEI resiliency. Top-performing Si|LFP cells featuring ditopic additive-enriched SEI improve capacity retention by as much as 45% over 100 cycles when compared to additive-free cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characterizing electron-collecting CdTe for use in a 77 ns burst-rate imager

The Keck-PAD (pixel array detector) was developed at Cornell as a burst-rate imager capable of recording images from successive electron bunches (153 ns period) from the Advanced Photon Source (APS). Both Si and hole-collecting Schottky CdTe have been successfully bonded to this ASIC (application-specific integrated circuit) and used with this frame rate. The facility upgrades at the APS will lower the bunch period to 77 ns, which will require modifications to the Keck-PAD electronics to image properly at this reduced period. In addition, operation at high X-ray energies will require a different sensor material having a shorter charge collection time. For the target energy of 40 keV for this project, simulations have shown that electron-collecting CdTe should allow >90% charge collection within 35 ns. This collection time will be sufficient to sample the signal from one frame and prepare for the next. 750 µm-thick electron-collecting Schottky CdTe has been obtained from Acrorad and bonded to two different charge-integrating ASICs developed at Cornell, the Keck-PAD and the CU-APS-PAD. Carrier mobility has been investigated using the detector response to single X-ray bunches at the Cornell High Energy Synchrotron Source and to a pulsed optical laser. The tests indicate that the collection time will meet the requirements for 77 ns imaging.

36 MATERIALS SCIENCE↗

Post irradiation effects (PIE) in integrated circuits

Post-irradiation effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. Data presented show failure due to rebound after a 10 krad(Si) dose. In particular, five device types are investigated with varying PIE response. Special attention has been given to the HI1-507A analog multiplexer because its PIE response is extreme. X-ray diffraction has been uniquely employed to measure physical stress in the HI1-507A metallization. An attempt has been made to show a relationship between stress relaxation and radiation effects. All data presented support the current MIL-STD Method 1019.4 but demonstrate the importance of performing PIE measurements, even when mission doses are as low as 10 krad(Si).

Shaw, D. C.↗

Integrated Antenna/Solar Array Cell (IA/SAC) System for Flexible Access Communications

Present satellite communications systems normally use separate solar cells and antennas. Since solar cells generally account for the largest surface area of the spacecraft, co-locating the antenna and solar cells on the same substrate opens the possibility for a number of data-rate-enhancing communications link architecture that would have minimal impact on spacecraft weight and size. The idea of integrating printed planar antenna and solar array cells on the same surface has been reported in the literature. The early work merely attempted to demonstrate the feasibility by placing commercial solar cells besides a patch antenna. Recently, Integrating multiple antenna elements and solar cell arrays on the same surface was reported for both space and terrestrial applications. The application of photovoltaic solar cell in a planar antenna structure where the radiating patch antenna is replaced by a Si solar cell has been demonstrated in wireless communication systems (C. Bendel, J. Kirchhof and N. Henze, 3rd Would Photovotaic Congress, Osaka, Japan, May 2003). Based on a hybrid approach, a 6x1 slot array with circularly polarized crossdipole elements co-located on the same surface of the solar cells array has been demonstrated (S. Vaccaro, J. R. Mosig and P. de Maagt, IEEE Trans. Ant. and Propag., Vol. 5 1, No. 8, Aug. 2003). Amorphous silicon solar cells with about 5-10% efficiency were used in these demonstrations. This paper describes recent effort to integrate advanced solar cells with printed planar antennas. Compared to prior art, the proposed WSAC concept is unique in the following ways: 1) Active antenna element will be used to achieve dynamic beam steering; 2) High efficiency (30%) GaAs multi-junction solar cells will be used instead of Si, which has an efficiency of about 15%; 3) Antenna and solar cells are integrated on a common GaAs substrate; and 4) Higher data rate capability. The IA/SAC is designed to operate at X-band (8-12 GH) and higher frequencies Higher operating frequencies enable greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of GaAs solar cell MIMs (Monolithically Integrated Module) with a single patch antenna on the opposite side of the substrate. Subsequent work will involve the integration of MIMs and antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Lee, Ricard Q.↗

Titrating Controlled Defects into Si-LTA Zeolite Crystals Using Multiple Organic Structure-Directing Agents

Controlling defects in zeolites is crucial for tuning their adsorption and catalytic properties. In this work, we have performed an integrated zeolite synthesis, spectroscopy, and density functional theory study to test the limit of F– as a charge-balancing agent that mitigates defects in siliceous zeolites. We focused on the synthesis of siliceous zeolite LTA at 150 °C with 1,2-dimethyl-3-(4-methylbenzyl) imidazolium as the primary organic structure-directing agent (OSDA) and tetramethyl ammonium (TMA) as the secondary OSDA. By varying the amount of TMA in the synthesis gel, positive charges were titrated into the resulting as-made Si-LTA. Surprisingly, we found that greater TMA concentration does not induce more F– to enter into the zeolite. 29Si solid-state MAS NMR, Raman spectroscopy, and density functional theory suggest that this system has surpassed its capacity for F– to balance OSDA charge, and additional positive charge is balanced by Si–O– framework defects. The number of defects in the as-made Si-LTA can be precisely titrated by the amount of TMA in the zeolite structures. For the Si-LTA synthesized without TMA, framework defects formed in the early stage of crystal growth were found to heal during later crystallization, leading to defect-free Si-LTA. However, for the Si-LTA synthesized with TMA, the defects formed in early stages do not heal. A DFT thermodynamic analysis explains that crowding of Si-LTA pores by TMA impedes defect healing; this prediction is corroborated by synthesis experiments at an elevated temperature (170 °C). These results indicate that F– can have a limited capacity to balance OSDA charge in zeolite synthesis, opening up a third route to zeolite synthesis intermediate between the fluoride and hydroxide routes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A performance comparison between GaInP-on-Si and GaAs-on-Si 3-terminal tandem solar cells

The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.

14 SOLAR ENERGY↗

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗

Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

HfO2-Si bond coat↗

Copper Outdiffusion from Copper-Plated Solar Cell Contacts during Damp Heat Exposure

Plated copper (Cu) contacts for silicon (Si) solar cells are an attractive alternative material to conventional screenprinted silver, but there are unresolved questions on the long-term integrity of plated contact structures. Here, in this work, we perform characterization on plated Cu contacts from encapsulated cells that were degraded during extended exposure to damp heat (DH) stress. First, using energy-dispersive X-ray spectroscopy, we find evidence of Cu outdiffusion upward through capping layers made of both tin and silver applied with light-induced plating, resulting in a layer of Cu on the outer contact surface. We hypothesize that if Cu is mobile in the module, it may eventually find some route by which to enter the Si cells where it can degrade performance. Subsequently, in several types of Cu-plated, DH-degraded cells, secondary ion mass spectrometry detects elevated levels of Cu at the Si surface and in the Si cell bulk, which suggests that Cu can indeed migrate from contacts into Si over the course of DH stress.

14 SOLAR ENERGY↗

High event rate analysis technique for the dual-axis duo-lateral position-sensitive silicon detectors of FAUST

The dual-axis duo-lateral (DADL) position-sensitive silicon detector was developed to obtain precise position and energy information for detected charged particles. The Forward Array Using Silicon Technology (FAUST) is currently equipped with 68 DADL detectors backed by CsI(Tl) scintillators for the study of charged particle correlations in heavy-ion collisions where precise position and energy information is essential. When conventional signal processing electronics were used for the DADL detectors, a position dependence of the measured energy as well as distortions in the calculated particle positions were observed. In previous work, waveforms from the detector after preamplification were studied to better understand the features that give rise to these distortions; therein, a waveform analysis technique was developed to improve the energy resolution and linearity in position reconstruction. However, the reading and writing of waveforms for an entire detector array limits data collection rates and adds significant burden in data storage and analysis speed. In this work, the integrators of a Struck SIS3316 ADC were utilized to process 228 Th source data to develop and optimize a new analysis method that captures the benefits of the waveform analysis technique while circumventing the waveform writing requirement. This integrator method – capable of 59 keV (FWHM) energy resolution – was used in the collection of 35 MeV/nucleon 28 Si + 12 C collision data using FAUST to investigate exotic decays of highly excited highly deformed nuclei. In this data, a position resolution of 0.4 mm (FWHM) was obtained for 25 MeV α-particles; for α-particles near this energy that originate from 8 Be ground state decays, a 8 Be ground state width of 30 keV (FWHM) was obtained. The impact of the energy-dependent DADL position resolution emergent from electronic noise on the quality of excited state measurement was modeled and compared to the experimental data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Piezoelectric Actuation of Graphene-Coated Polar Structures

Ferroelectric materials based on lead zirconate titanate (PZT) are widely used as sensors and actuators because of their strong piezoelectric activity. However, their application is limited because of the high processing temperature, brittleness, lack of conformal deposition, and a limited possibility to be integrated with the microelectromechanical systems (MEMS). Recent studies on the piezoelectricity in the 2-D materials have demonstrated their potential in these applications, essentially due to their flexibility and integrability with the MEMS. In this work, we deposited a few layer graphene (FLG) on the amorphous oxidized Si 3 N 4 membranes and studied their piezoelectric response by sensitive laser interferometry and rigorous finite-element modeling (FEM) analysis. Modal analysis by FEM and comparison with the experimental results show that the driving force for the piezoelectric-like response can be a polar interface layer formed between the residual oxygen in Si 3 N 4 and the FLG. The response was about 14 nm/V at resonance and could be further enhanced by adjusting the geometry of the device. These phenomena are fully consistent with the earlier piezoresponse force microscopy (PFM) observations of the piezoelectricity of the graphene on SiO 2 and open up an avenue for using graphene-coated structures in the MEMS.

36 MATERIALS SCIENCE↗

Fabricating binary optics: An overview of binary optics process technology

A review of binary optics processing technology is presented. Pattern replication techniques have been optimized to generate high-quality efficient microoptics in visible and infrared materials. High resolution optical photolithography and precision alignment is used to fabricate maximally efficient fused silica diffractive microlenses at lambda = 633 nm. The degradation in optical efficiency of four-phase-level fused silica microlenses resulting from an intentional 0.35 micron translational error has been systematically measured as a function of lens speed (F/2 - F/60). Novel processes necessary for high sag refractive IR microoptics arrays, including deep anisotropic Si-etching, planarization of deep topography and multilayer resist techniques, are described. Initial results are presented for monolithic integration of photonic and microoptic systems.

Stern, Margaret B.↗

Chemical Evolution of Interstellar Dust into Planetary Materials

Comets are believed to retain some interstellar materials, stored in fairly pristine conditions since-their formation. The composition and properties of cometary dust grains should reflect those of grains in the outer part of the protosolar nebula which, at least in part, were inherited from the presolar molecular cloud. However, infrared emission features in comets differ from their interstellar counterparts. These differences imply processing of interstellar material on its way to incorporation in comets, but C and N appear to be retained. Overall dust evolution from the interstellar medium (ISM) to planetary materials is accompanied by an increase in proportion of complex organics and a decrease in pure carbon phases. The composition of cometary dust grains was measured in situ during fly-by missions to comet Halley in 1986. The mass spectra of about 5000 cometary dust grains with masses of 5 x 10(exp -17) - 5 x 10(exp -12) g provide data about the presence and relative abundances of the major elements H, C, N, O,Na, Mg, Al, Si, S, Cl, K, Ca, Ti, Cr, Fe, Ni. The bulk abundances of major rock-forming elements integrated over all spectra were found to be solar within a factor of 2, while the volatile elements H, C, N, O in dust are depleted in respect to their total cosmic abundances. The abundances of C and N in comet dust are much closer to interstellar than to meteoritic and are higher than those of dust in the diffuse ISM. In dense molecular clouds dust grains are covered by icy mantles, the average composition of which is estimated to be H:C:N:O = 96:14:1:34. Up to 40% of elemental C and O may be sequestered in mantles. If we use this upper limit to add H, C, N and O as icy mantle material to the abundances residing in dust in the diffuse ISM, then the resulting values for H. C, and N match cometary abundances. Thus, ice mantles undergoing chemical evolution on grains in the dense ISM appear to have been transformed into less volatile and more complex organic residues wherein the H, C and N are largely retained and ultimately accreted in cometary dust. The abundance of O is about the same for cometary dust, meteorites and interstellar dust. In all these samples, most of O in a solid phase is bonded to silicates. In dense molecular clouds, the abundance of O in dust+mantles is significantly higher then in cometary dust. This difference may reflect the greater lability of oxygenated species toward astrophysical processing. Laboratory studies show that O-bearing functional groups in organic compounds tend to be relatively easily removed by heating and/or UV and particle irradiation . In Halley's coma, O-containing organic grains, being unstable, were located closest to the nucleus. The decomposition of the organic grain component in the coma provided a significant extended source contribution to O-containing gaseous species such as CO and H2CO.

Fomenkova, M. N.↗

Design of a SiC-Si moving packed-bed particle-to-sCO 2 heat exchanger for high temperature concentrating solar power applications

Particle-based concentrating solar power systems integrated with sCO 2 power cycles offer high thermal efficiencies but require durable heat exchangers to transfer heat from high-temperature particles to the sCO 2 working fluid. Here, this study presents the design and optimization of a silicon carbide-silicon moving packed-bed heat exchanger for fabrication via binder jetting additive manufacturing. The heat exchanger was designed to withstand a 20 MPa sCO 2 pressure and operate at particle inlet temperatures up to 750 °C. The final design features 152 sCO 2 channels distributed across 19 plates, with elliptical corners and a minimum wall thickness of 3 mm. Flow restrictors at the sCO 2 channel inlets significantly improved flow uniformity, reducing thermal stresses and achieving a structural reliability of 99 % under representative operating conditions. The heat exchanger delivers a thermal duty of 9 kW and a volumetric power density of approximately 1 MW/m 3 in the channel region. Sensitivity studies confirmed the heat exchanger’s robustness under varying operating conditions, demonstrating its viability as a high-performance alternative to metallic heat exchangers for particle-based high-temperature concentrating solar power applications.

Barua, Bipul [Argonne National Laboratory (ANL), A↗

Operando study of mechanical integrity of high-volume expansion Li-ion battery anode materials coated by Al 2 O 3

Group IV elements and their oxides, such as Si, Ge, Sn and SiO have much higher theoretical capacity than commercial graphite anode. However, these materials undergo large volume change during cycling, resulting in severe structural degradation and capacity fading. Al 2 O 3 coating is considered an approach to improve the mechanical stability of high-capacity anode materials. To understand the effect of Al 2 O 3 coating directly, we monitored the morphology change of coated/uncoated Sn particles during cycling using operando focused ion beam–scanning electron microscopy. Here, the results indicate that the Al 2 O 3 coating provides local protection and reduces crack formation at the early stage of volume expansion. The 3 nm Al 2 O 3 coating layer provides better protection than the 10 and 30 nm coating layer. Nevertheless, the Al 2 O 3 coating is unable to prevent the pulverization at the later stage of cycling because of large volume expansion.

25 ENERGY STORAGE↗

Mitochondrial Effects in the Liver of C57BL/6 Mice by Low Dose, High Energy, High Charge Irradiation

Galactic cosmic rays are primarily composed of protons (85%), helium (14%), and high charge/high energy ions (HZEs) such as 56 Fe, 28 Si, and 16 O. HZE exposure is a major risk factor for astronauts during deep-space travel due to the possibility of HZE-induced cancer. A systems biology integrated omics approach encompassing transcriptomics, proteomics, lipidomics, and functional biochemical assays was used to identify microenvironmental changes induced by HZE exposure. C57BL/6 mice were placed into six treatment groups and received the following irradiation treatments: 600 MeV/n 56 Fe (0.2 Gy), 1 GeV/n 16 O (0.2 Gy), 350 MeV/n 28 Si (0.2 Gy), 137 Cs (1.0 Gy) gamma rays, 137 Cs (3.0 Gy) gamma rays, and sham irradiation. Left liver lobes were collected at 30, 60, 120, 270, and 360 days post-irradiation. Analysis of transcriptomic and proteomic data utilizing ingenuity pathway analysis identified multiple pathways involved in mitochondrial function that were altered after HZE irradiation. Lipids also exhibited changes that were linked to mitochondrial function. Molecular assays for mitochondrial Complex I activity showed significant decreases in activity after HZE exposure. HZE-induced mitochondrial dysfunction suggests an increased risk for deep space travel. Microenvironmental and pathway analysis as performed in this research identified possible targets for countermeasures to mitigate risk.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗