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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗
NASA NTRSDate not supplied

Progress Towards Prolonged Deployment of SiC JFET-R ICs Into Previously Inaccessible Hostile Environments

This invited presentation describes demonstration of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. SiC junction field effect transistor-resistor (JFET-R) ICs with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient [1], 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber [2], and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes [3]. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C T-span) without significant change in signal (input /output) or power supply voltages [4]. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards this end, the processing that forms the SiC JFETs and resistors (without interconnect) for the NASA Glenn “Generation 12” design prototype JFET-R ICs was conducted at GE Research. Once the COVID-delayed IC interconnect and bond pad fabrication processing on these wafers is completed at NASA Glenn, the resulting chips will be packaged and oven-tested [5]. It is expected that further technology transfer to complete commercial production will lower investment and risk barriers to useful application deployment. For NASA, an initial high-value deployment is opening the Venus surface to extended missions for robotic scientific exploration.

Silicon Carbide↗
NASA NTRS2024

SiC Charged Particle Telescope GRC Independent Research and Development (IRAD) Program End of Project Final Report

In an advancement over the state-of-the art, NASA Glenn Research Center (GRC) has developed a large area silicon carbide (SiC)-based charged particle telescope through an Independent Research and Development (IRAD) project. The telescope has been demonstrated to have improved noise characteristics and resolution than previous SiC detectors. This improvement will meet the challenges of compact multidirectional robust radiation detector systems to study a wide range of elementary particle mass and energies. In order to provide a complete understanding of how energetic processes internal and external to the solar system shape magnetospheres, atmospheres, and surfaces, in situ particle observations should include measurements of Solar Energetic Particles (SEP) and Galactic Cosmic Rays (GCR), along with solar wind and plasma. The potential temperature stability, tolerance to high radiation environments, and low noise characteristics expected in SiC-based detectors can have advantages over the state-of-the-art silicon detectors. These advantages will allow the detectors to be deployed in small compact systems on a variety of platforms, enabling compact structures for small satellite platforms with improved data quality.

Field and particle detectors↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗
NASA NTRS2018

Advanced Environmental Barrier Coating and SA Tyrannohex SiC Composites Integration for Improved Thermomechanical and Environmental Durability

The development of 2700 degF capable environmental barrier coating (EBC) systems, particularly, the Rare Earth "Hafnium" Silicon bond coat systems, have significantly improved the temperature capability and environmental stability of SiC/SiC Ceramic Matrix Composite Systems. We have specifically developed the advanced 2700 degF EBC systems, integrating the EBC to the high temperature SA Tyrannohex SiC fiber composites, for comprehensive performance and durability evaluations for potential turbine engine airfoil component applications. The fundamental mechanical properties, environmental stability and thermal gradient cyclic durability performance of the EBC - SA Tyrannohex composites were investigated. The paper will particularly emphasize the high pressure combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue testing of uncoated and environmental barrier coated Tyrannohex SiC SA composites in these simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. We have also investigated high heat flux and flexural fatigue degradation mechanisms, determined the upper limits of operating temperature conditions for the coated SA composite material systems in thermomechanical fatigue conditions. Recent progress has also been made by using the self-healing rare earth-silicon based EBCs, thus enhancing the SA composite hexagonal fiber columns bonding for improved thermomechanical and environmental durability in turbine engine operation environments. More advanced EBC- composite systems based on the new EBC-Fiber Interphases will also be discussed.

Tyrannohex SiC Ceramics↗
NASA NTRS2017

Radiation Hardness Study on SiC Power MOSFETs

As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).

SiC↗
NASA NTRSDate not supplied

Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment

We compare the failure mechanism and performance of a silicon carbide (SiC) semi-superjunction (semi-SJ) power DMOSFET against pure SJ and conventional DMOSFET when struck by a single heavy ion. The Single-Event Burnout (SEB) failure mechanism was identified as the thermal runaway from second breakdown resulting in mesoplasma formation. The semi-SJ design shifts the mesoplasma location from the drift/substrate interface seen in the control device structures to a location along the center of the P-pillar and closer towards the DMOSFET surface, thus significantly improving the SEB threshold voltage. The SEB threshold voltage varies with pillar width and ratio of pillar thickness to drift layer thickness. A maximum value of SEB threshold voltage is reached when the pillar to drift layer ratio is 0.9 and the pillar width is 2.4 μm. The semi-SJ SEB/breakdown voltage ratio is 100% and 13% higher than the pure SJ and conventional DMOSFET, respectively. Using a new figure of merit (FOM), which accounts for the tradeoff between SEB threshold voltage and on-state performance, we find that the SiC semi-SJ DMOSFET achieves a FOM that is 1.8 and 8 times higher than SJ and conventional DMOSFET, respectively, making the semi-SJ a competitive candidate for radiation hardened applications.

SiC↗
NASA NTRS1977

Surface finish effects and the strength-grain size relation in SiC

The effect of surface finish on the strength-grain size relation was investigated for dense hot-pressed SiC. Failure initiated predominantly via the propagation of extrinsic machining-induced flaws for the range of grain sizes and machining grit sizes studied. These results are consistent with the region of large-grain-size flaw control as delineated by Prochazka and Charles. The severity of machining-induced flaws, relative to the machining grit size, decreased with increasing machining grit size and decreasing SiC grain size.

Cranmer, D. C.↗
NASA NTRS1978

High Velocity Burner Rig Oxidation and Thermal Fatigue Behavior of Si3N4- and SiC Base Ceramics to 1370 Deg C

One SiC material and three Si3N4 materials including hot-pressed Si3N4 as a baseline were exposed in a Mach-1-gas-velocity burner rig simulating a turbine engine environment. Criteria for the materials selection were: potential for gas-turbine usage, near-net-shape fabricability and commercial/domestic availability. Cyclic exposures of test vanes up to 250 cycles (50 hr at temperature) were at leading-edge temperatures to 1370 C. Materials and batches were compared as to weight change, surface change, fluorescent penetrant inspection, and thermal fatigue behavior. Hot-pressed Si3N4 survived the test to 1370 C with slight weight losses. Two types of reaction-sintered Si3N4 displayed high weight gains and considerable weight-change variability, with one material exhibiting superior thermal fatigue behavior. A siliconized SiC showed slight weight gains, but considerable batch variability in thermal fatigue.

Sanders, W. A.↗
NASA NTRS1981

Bending fatigue tests on SiC-Al tapes under alternating stress at room temperature

The development of a testing method for fatigue tests on SiC-Al tapes containing a small amount of SiC filaments under alternating stress is reported. The fatigue strength curves resulting for this composite are discussed. They permit an estimate of its behavior under continuous stress and in combination with various other matrices, especially metal matrices.

Herzog, J. A.↗
NASA NTRS1982

SiC or B4C-B/low strategic element content composite

Advancements in materials technologies are needed to provide the aerospace industry with alternate material options in the event of future strategic metal shortages and to optimize performance of engines. Composite materials are promising candidates for such an application. The potential of SiC and B4C-B filament reinforced low strategic element iron-base alloy content composites or use at 760 to 870 C is considered. A limiting factor towards developing this material for high temperature use has been the reaction between the filament and matrix material during fabrication and service which degrades filament strength. A low temperature fabrication process to limit filament/matrix reaction is being developed which involves the use of hollow cathode sputtering to coat the filaments with iron-base alloys of various compositions. An investigation is being conducted to determine the interfacial reaction effects of SiC and B4C-B filaments with iron-base alloys to develop an understanding of filament/matrix alloy compatibility for 760 to 870 C service.

Petrasek, D. W.↗
NASA NTRS1983

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Nishino, S.↗
NASA NTRS1984

Effects of applied pressure on hot-pressing of Beta-SiC

The effects of applied pressure on the densification during hot pressing of beta-SiC compacts were investigated. Beta-SiC powder is Starck made and has the average particle size of about 0.7 micrometer. Hot pressing experiments were carried out in graphite dies at temperatures of 1700 deg to 2300 deg C and at the pressures up to 1000 kg/sq cm. The compacts containing 1 weight percent B4C were examined. Sintered compacts were examined for microstructure and the Rockwell A-scale hardness was measured. The B4C addition was very effective to mitigate the hot pressing conditions. It is found that densification goes with the strengthening of the bonding and does not occur in particle deformation due to concentrated stress.

Kinoshita, M.↗
NASA NTRS1984

Processing of sintered alpha SiC

Processing methods of sintered alpha SiC for engine applications are developed in a cost effective manner, using a submicron sized powder blended with sintering aids (boron and carbon). The processes for forming a green powder compact, such as dry pressing, cold isostatic pressing and green machining, slip casting, aqueous extrusion, plastic extrusion, and injection molding, are described. Dry pressing is the simplest route to component fabrication, and is carried out at approximately 10,000 psi pressure, while in the cold isostatic method the pressure could go as high as 20,000 psi. Surfactants are added to control settling rates and casting characteristics in the slip casting. The aqueous extrusion process is accomplished by a hydraulic ram forcing the aqueous mixture through a die. The plastic forming processes of extrusion and injection molding offer the potential of greater diversity in shape capacity. The physical properties of sintered alpha SiC (hardness, Young's modulus, shear modulus, and thermal diffusivity) are extensively tested. Corrosion resistance test results of silicon carbide are included.

Storm, R. S.↗
NASA NTRS1984

Reactive sintering of SiC

Investigation of the sintering processes involved in the sintering of SiC revealed a connection between the types and quantities of sintering additives or catalysts and densification, initial shrinkage, and weight loss of the sintered SiC material. By sintering processes, is meant the methods of mass transport, namely solid vapor transport and grain boundary diffusion.

Kim, Y. W.↗
NASA NTRS1984

Creep of chemically vapor deposited SiC fibers

The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

Dicarlo, J. A.↗
NASA NTRS1985

Parametric evaluation of ball milling of SiC in water

A statistically designed experiment was conducted to determine optimum conditions for ball milling alpha-SiC in water. The influence of pH adjustment, volume percent solids loading, and mill rotational speed on grinding effectiveness was examined. An equation defining the effect of those milling variables on specific surface area was obtained. The volume percent solids loading of the slurry had the greatest influence on the grinding effectiveness in terms of increase in specific surface area. As grinding effectiveness improved, mill and media wear also increased. Contamination was minimized by use of sintered alpha-SiC milling hardware.

Kiser, J. D.↗