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DOE OSTI2021

DMRG on Top of Plane-Wave Kohn–Sham Orbitals: A Case Study of Defected Boron Nitride

In this paper, we analyze the numerical aspects of the inherent multi reference density matrix renormalization group (DMRG) calculations on top of the periodic Kohn-Sham density functional theory using the complete active space approach. The potential of the framework is illustrated by studying hexagonal boron nitride nanoflakes embedding a charged single boron vacancy point defect by revealing a vertical energy spectrum with a prominent multireference character. We investigate the consistency of the DMRG energy spectrum from the perspective of sample size, basis size, and active space selection protocol. Results obtained from standard quantum chemical atom-centered basis calculations and plane-wave based counterparts show excellent agreement. Furthermore, we also discuss the spectrum of the periodic sheet which is in good agreement with extrapolated data of finite clusters. These results pave the way toward applying the DMRG method in extended correlated solid-state systems, such as point defect qubit in wide band gap semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1994

Occurence and implications of silicon nitride in enstatic chondrites

Silicon nitride Si3N4, has previously been observed to be a common constituent of acid residues of Qingzhen (EH3) and Indarch (EH4). Ion probe analysis of the Si, N and C isotopic compositions of individual Si3N4 grains from Qingzhen and Indarch acid residues suggest most, if not all, grains are Solar System in origin. A few grains have isotopically anomalous C but this is probably due to small presolar SiC grains adhering to them. In situ observations of the Si3N4 in Qingzhen show that it is only present within, and probably exsolved from, host phases which contain elemental Si in solid solution. Thermodynamic calculations suggest that the Si3N4 probably formed during metamorphism and not in the nebula. Thermodynamic calculations also show that sinoite (Si2N2O) and not Si3N4 should be the stable phase during metamorphism. It appears that kinetic factors must have inhibited the formation if sinoite in Qimgzhen and Indarch.

Alexander, C. M. O'D.↗

NASA NTRS1989

Fundamental tribological properties of ion-beam-deposited boron nitride films

The adhesion, friction, and micromechanical properties of ion-beam-deposited boron nitride (BN) films are reviewed. The BN films are examined in contact with BN metals and other harder materials. For simplicity of discussion, the tribological properties of concern in the processes are separated into two parts. First, the pull-off force (adhesion) and the shear force required to break the interfacial junctions between contacting surfaces are discussed. The effects of surface films, hardness of metals, and temperature on tribological response with respect to adhesion and friction are considered. The second part deals with the abrasion of the BN films. Elastic, plastic, and fracture behavior of the BN films in solid-state contact are discussed. The scratch technique of determining the critical load needed to fracture interfacial adhesive bonds of BN films deposited on substrates is also addressed.

Miyoshi, Kazuhisa↗

NASA NTRS1990

Fundamental tribological properties of ion-beam-deposited boron nitride films

Miyoshi, K.↗

NASA NTRS1990

Performance characterization of a segmented anode arcjet thruster

A modular, 1 to 2 kW class arcjet thruster incorporating a segmented anode/nozzle was operated on a thrust stand to obtain performance characteristics of the device and further study its operating characteristics under a number of experimental conditions. The nozzle was composed of five axial conducting segments isolated from one another by boron nitride spacers. The electrical configuration allowed the current delivered to the arcjet to be collected at any combination of segments. Both the current collected by each segment, and the potential difference between the cathode and each segment were monitored throughout the test period. As in previous tests a similar device, current appeared to attach diffusely in the anode when all of the segments were allowed to conduct. Improvements to the device allowed long term (4 to 8 hour) operation at steady-state and operating characteristics were repeatable over extended periods. Performance characteristics indicated that the segmented anode reasonably simulates the behavior of solid anodes of similar geometry. Current distribution depended on flow rate as the arc attachment moved downstream in the nozzle with increases in the mass flow rate. The current level had little effect on current distribution on the anode segments. Thrust measurements indicated that the current distribution in the nozzle did not significantly affect performance of the device.

Curran, Francis M.↗

NASA NTRS2018

Nanoparticle Hybrid Composites by RF Plasma Spray Deposition

A method of fabricating a composite material includes utilizing a radio frequency plasma process to form a plasma plume comprising nanoparticles. The nanoparticles may comprise boron nitride nanoparticles, silicon carbide nanoparticles, beryllium oxide nanoparticles, or carbon nanoparticles. The nanoparticles may comprise nanotubes or other particles depending on the requirements of a particular application. The nanoparticles are deposited on a substrate by directing a plasma plume towards the substrate. The nanoparticles are formed in the plasma plume immediately prior to being deposited on the substrate. The nanoparticles may form a mechanical bond with the fibers in addition to a chemical bond in the absence of a catalyst. The substrate may comprise a fiber fabric that may optionally be coated with a thin layer of metal. Alternatively, the substrate may comprise a solid material such as a metal sheet or plate.

Hales, Stephen J.↗

DOE OSTI2022

Real-time wall conditioning and recycling modification utilizing boron and boron nitride powder injections into the Large Helical Device

Controlled particulate injections from the PPPL impurity powder dropper (IPD) into the Large Helical Device have demonstrated positive effects on the wall conditions on both an intra and inter-shot basis. Here injections over a range of densities, input powers, pulse lengths, heating schemes, injection quantities and main ion species show conclusive evidence of improvement to plasma wall conditions. Successful injections are confirmed by both spectroscopic measurements as well as real-time visible camera signals. In 7 s long plasmas the responses include a reduction in wall recycling as well as a reduction in native impurity content as observed over the course of several discharges. For plasmas longer than 40 s, improvements to the recycling rate and increased impurity control are observed in real time as a consequence of the extended particulate injections. These experiments demonstrate the extended applicability of this solid particulate conditioning technique to the control and maintenance of the plasma wall conditions. In addition they are an important initial step in the development of the real-time boronization technique as a supplement to standard conditioning scenarios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2022

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN light-emitting diodes (LEDs) are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. In this work, we measure the carrier dynamics of a variety of InGaN/GaN LEDs using small-signal electroluminescence methods [1]. A rate equation approach and associated small-signal circuit are used to model carrier injection, recombination in the active region, recombination in the cladding regions, and carrier escape. The model is fit to the measured optical frequency response (S21) and input impedance (S11) of the LEDs to extract the various carrier lifetimes, the carrier density, and the radiative and non-radiative recombination rates. We specifically study planar nonpolar and semipolar LEDs, which show record-high modulation speeds for III-nitride LEDs and present the modulation characteristics of core-shell nanowire-based LEDs. The planar nonpolar m-plane ($101\bar{0}$) micro-LEDs achieve a record-high -3dB modulation bandwidth for a III-nitride LED of 1.5 GHz [2]. The -3dB response of an electrically injected nanowire-based micro-LED with nonpolar facets is also reported, showing a -3dB bandwidth of 1.2 GHz [3]. The high speed is attributed to the shorter carrier lifetime associated with the nonpolar orientation. We also study the carrier dynamics in semipolar ($20\bar{2}\bar{1}$) LEDs for various temperatures [4]. Finally, we present carrier dynamics measurements on commercial-grade c-plane epitaxy for various active region designs, including a wavelength series and a growth quality series. The wavelength series offers insight into the contributions of the quantum confined Stark effect (QCSE) and InGaN material quality on the green gap [5]. The growth quality series investigates the role of non-radiative centers on the LED performance. Extraction of the carrier dynamics using small-signal electroluminescence offers insight into the factors limiting the efficiency and high-speed performance of III-nitride emitters and can be leveraged to ultimately improve the devices.

LEDs, InGaN, electroluminescence, bandwidth, modul↗

DOE OSTI2026

Nanopores with dynamic pore opening diameter

Solid state nanopores have emerged as model systems for understanding transport properties on the nanoscale. They serve as templates for both preparing mimics of biological channels and designing biological sensors. Unlike their biological inspirations, the majority of nanopores prepared thus far, however, have been structurally static devices such that the pore opening diameter is fixed. If we could prepare nanopores whose opening diameter fluctuated in time with controlled amplitude at known locations in the pore, we could create ionic memristors as well as achieve new transport modes. Here we present ∼10 nm diameter single nanopores drilled through a 10 nm thick gold layer positioned on top of a 30 nm thick silicon nitride film. Two types of devices were prepared; one containing single stranded DNA and the other containing hairpin DNA attached to the discrete layer of gold using thiol chemistry. When an external electric field was applied across a nanopore with single stranded DNA, the nanoconfined DNA molecules exhibited steric and electrical constraints that led to memristor-like behavior in the current–voltage curves. The degree of hysteresis was controlled by salt concentration, magnitude of voltage and pore diameter. In contrast, nanopores containing DNA hairpins conducted similar currents in forward and reverse bias in agreement with the rigidity of the hairpin molecule. The experiments are explained by Brownian dynamics simulations that reveal voltage and salt concentration induced changes in DNA extension. The degree of DNA extension was also found to be dependent on the location of the molecules along the pore axis. The nanopores presented here provide the first steps towards preparation of non-equilibrium nanopore systems.

Vlassiouk, Ivan [ORNL] (ORCID:0000000254940386)↗

DOE OSTI2025

Low-dimensional solid-state single-photon emitters

Solid-state single-photon emitters (SPEs) are attracting significant attention as fundamental components in quantum computing, communication, and sensing. Low-dimensional materials-based SPEs (LD-SPEs) have drawn particular interest due to their high photon extraction efficiency, ease of integration with photonic circuits, and strong coupling with external fields. The accessible surfaces of LD materials allow for deterministic control over quantum light emission, while enhanced quantum confinement and light–matter interactions improve photon emissive properties. This perspective examines recent progress in LD-SPEs across four key materials: zero-dimensional (0D) semiconductor quantum dots, one-dimensional (1D) nanotubes, two-dimensional (2D) materials, including hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs). We explore their structural and photophysical properties, along with techniques such as spectral tuning and cavity coupling, which enhance SPE performance. Finally, we address future challenges and suggest strategies for optimizing LD-SPEs for practical quantum applications.

42 ENGINEERING↗

NASA NTRS2026

Radiation-Conditioned Ti–hBN Coatings for Space Mechanisms: Bridging Tribology and Irradiation Effects from Laboratory to Low-Earth Orbit

The longevity of tribological components in extraterrestrial environments is challenged by abrasive regolith, extreme temperatures, and ionizing radiation. This study evaluates the performance of vacuum plasma sprayed (VPS) Ti-2vol.% hexagonal boron nitride (hBN) coatings applied to joint mechanisms such as rod and slot, ball and socket, and hinge assemblies, fabricated from Al6061 and Ti6Al4V for planetary structures. Coated and uncoated samples were tested under vacuum with lunar regolith simulant (JSC-1A), followed by environmental exposures including electron radiation and thermal cycling. Results show that coated samples consistently outperformed uncoated counterparts across all configurations. Wear depth in coated components was reduced by over 80%, as confirmed by 3D profilometry and surface imaging. SEM analysis revealed severe abrasion and localized plastic deformation in uncoated surfaces, while coated samples retained structural integrity due to synergy of hard protective phases formed during deposition and retained hBN providing solid lubrication in the sliding surface. Coated and exposed samples exhibited smoother actuation profiles and reduced friction, indicating a beneficial "conditioning" effect from environmental exposure. The coatings-maintained performance even on complex geometries with minimal delamination. These findings demonstrate the potential of VPS Ti-hBN coatings to extend the operational life of lunar mechanisms, bridging laboratory-scale tribology with flight-relevant mechanical applications.

tribology↗

NASA NTRS2001

Bridgman Growth of Detached GeSi Crystals

The growth of detached crystals by the Bridgman technique, in which the growing crystal is not in contact with the crucible wall, has been observed both on earth and in microgravity conditions. Such detachment has particularly been in evidence in microgravity experiments, where the pressure head of the molten sample is absent. At present, the mechanisms contributing to the detachment are not completely understood and until recently detachment has not been reproducibly obtained. Key parameters which must be considered are the contact angle between the melt and the crucible and the growth angle. Another essential parameter is the pressure difference between the annular gap around the solid below the melt and the volume above the melt. Here we present results of the growth of Ge(0.98)Si(0.02) using adjustments in the applied temperature profile to control the pressure difference between the bottom and top of the melt. The technique is less susceptible to sample contamination than controlling the pressure by connecting the crucible to external gas sources. Using this technique, a pressure difference is created by decreasing the temperature in the volume above the melt while the sample is molten but prior to growth. A maximum pressure difference approximately equal to the pressure head of the molten sample can thus be obtained. Several GeSi crystals were grown in pyrolitic boron nitride crucibles. When a pressure difference was applied, samples were reproducibly grown mostly detached. For comparison, samples were also grown in a configuration in which gas could pass freely between the gap below the melt and the volume above the melt and no pressure difference could be established. These samples were initially attached. Existence of detachment was determined both by measuring the radius of the samples with a profilometer and by observations of the sample surfaces with optical and electron microscopy. The gap thickness between the crucible and detached crystal was on the order of 10 micron. The surfaces of the attached areas of the crystals had the same shape as the interior crucible wall whereas in the detached areas the crystal facets could usually be observed.

Volz, M. P.↗

DOE OSTI2021

Bilayer Wigner crystals in a transition metal dichalcogenide heterostructure

One of the first theoretically predicted manifestations of strong interactions in many-electron systems was the Wigner crystal, in which electrons crystallize into a regular lattice. The crystal can melt via either thermal or quantum fluctuations. Quantum melting of the Wigner crystal is predicted to produce exotic intermediate phases and quantum magnetism because of the intricate interplay of Coulomb interactions and kinetic energy. However, studying two-dimensional Wigner crystals in the quantum regime has often required a strong magnetic field or a moiré superlattice potential, thus limiting access to the full phase diagram of the interacting electron liquid. Here we report the observation of bilayer Wigner crystals without magnetic fields or moiré potentials in an atomically thin transition metal dichalcogenide heterostructure, which consists of two MoSe 2 monolayers separated by hexagonal boron nitride. We observe optical signatures of robust correlated insulating states at symmetric (1:1) and asymmetric (3:1, 4:1 and 7:1) electron doping of the two MoSe 2 layers at cryogenic temperatures. Here, we attribute these features to bilayer Wigner crystals composed of two interlocked commensurate triangular electron lattices, stabilized by inter-layer interaction. The Wigner crystal phases are remarkably stable, and undergo quantum and thermal melting transitions at electron densities of up to 6 × 10 12 per square centimetre and at temperatures of up to about 40 kelvin. Our results demonstrate that an atomically thin heterostructure is a highly tunable platform for realizing many-body electronic states and probing their liquid–solid and magnetic quantum phase transitions.

36 MATERIALS SCIENCE↗

NASA NTRS1984

Ceramic-to-metal bonding for pressure transducers

A solid-state diffusion technique involving the placement of a gold foil between INCONEL X-750 and a machinable glass-ceramic "MACOR" was shown to be successful in bonding these two materials. This technique was selected after an exhaustive literature search on ceramic-metal bonding methods. Small expansion mismatch between the Inconel and the MACOR resulted in fracture of the MACOR when the bonded body was subjected to tensile stress of 535 psi. The bonded parts were submitted to a cyclic loading test in an air atmosphere at 1 Hz from 0 to 60 KPa. Failure was observed after 700,000 cycles at 650 C. Ceramic-Inconel bonding was not achieved with this method for boron nitride and silica glass.

Mackenzie, J. D.↗

NASA NTRS2002

A Nonlinear Viscoelastic Model for Ceramics at High Temperatures

High-temperature creep behavior of ceramics is characterized by nonlinear time-dependent responses, asymmetric behavior in tension and compression, and nucleation and coalescence of voids leading to creep rupture. Moreover, creep rupture experiments show considerable scatter or randomness in fatigue lives of nominally equal specimens. To capture the nonlinear, asymmetric time-dependent behavior, the standard linear viscoelastic solid model is modified. Nonlinearity and asymmetry are introduced in the volumetric components by using a nonlinear function similar to a hyperbolic sine function but modified to model asymmetry. The nonlinear viscoelastic model is implemented in an ABAQUS user material subroutine. To model the random formation and coalescence of voids, each element is assigned a failure strain sampled from a lognormal distribution. An element is deleted when its volumetric strain exceeds its failure strain. Element deletion has been implemented within ABAQUS. Temporal increases in strains produce a sequential loss of elements (a model for void nucleation and growth), which in turn leads to failure. Nonlinear viscoelastic model parameters are determined from uniaxial tensile and compressive creep experiments on silicon nitride. The model is then used to predict the deformation of four-point bending and ball-on-ring specimens. Simulation is used to predict statistical moments of creep rupture lives. Numerical simulation results compare well with results of experiments of four-point bending specimens. The analytical model is intended to be used to predict the creep rupture lives of ceramic parts in arbitrary stress conditions.

Powers, Lynn M.↗

DOE OSTI2025

Engineering Electrical Transport by Implantation‐Induced Defects in CrN Films Without Affecting Thermal Conductivity

The transport properties of CrN thin films deposited on sapphire have been tailored through structural modifications induced by cumulative argon implantation. As-grown samples experience the typical structural transition in CrN films from orthorhombic at low temperature to cubic above the Néel temperature (≈280 K) and exhibit a metallic-like conduction in both phases. With increasing implantation dose, the conduction mode shifts to a semiconductor-like behavior in both phases, albeit at different damage levels. Analysis of the results suggests that hopping conduction becomes dominant beyond a given damage threshold. The results highlight a promising correlation between defect engineering and conduction mechanisms, offering valuable insights into the versatile electrical properties of CrN films. These implantation-induced defects scatter carriers, leading to a decrease in their mobility. As the implantation dose increases, the defect landscape evolves, modifying the density of states. However, up to a dose of 0.050 dpa, no significant influence on phonon scattering is observed. This approach demonstrates that ion implantation enables precise tuning of CrN's electrical properties without affecting thermal conductivity, offering valuable insights into defect engineering in transition metal nitrides and underscoring its potential for transport properties decorrelation.

defects↗

NASA NTRS1988

Friction and Wear of Monolithic and Fiber Reinforced Silicon-Ceramics Sliding Against IN-718 Alloy at 25 to 800 C in Atmospheric Air at Ambient Pressure

The friction and wear of monolithic and fiber reinforced Si-ceramics sliding against the nickel base alloy IN-718 at 25 to 800 C was measured. The monolithic materials tested were silicon carbide (SiC), fused silica (SiO2), syalon, silicon nitride (Si3N4) with W and Mg additives, and Si3N4 with Y2O3 additive. At 25 C fused silica had the lowest friction while Si3N4 (W,Mg type) had the lowest wear. At 800 C syalon had the lowest friction while Si3N4 (W,Mg type) and syalon had the lowest wear. The SiC/IN-718 couple had the lowest total wear at 25 C. At 800 C the fused silica/IN-718 couple exhibited the least total wear. SiC fiber reinforced reaction bonded silicon nitride (RBSN) composite material with a porosity of 32 percent and a fiber content of 23 vol percent had a lower coefficient of friction and wear when sliding parallel to the fiber direction than in the perpendicular at 25 C. The coefficient of friction for the carbon fiber reinforced borosilicate composite was 0.18 at 25 C. This is the lowest of all the couples tested. Wear of this material was about two decades smaller than that of the monolithic fused silica. This illustrates the large improvement in tribological properties which can be achieved in ceramic materials by fiber reinforcement. At higher temperatures the oxidation products formed on the IN-718 alloy are transferred to the ceramic by sliding action and forms a thin, solid lubricant layer which decreases friction and wear for both the monolithic and fiber reinforced composites.

Deadmore, Daniel L.↗

DOE OSTI2020

Large-scale integration of artificial atoms in hybrid photonic circuits

A central challenge in developing quantum computers and long-range quantum networks is the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state ‘artificial atom’ qubits because they enable on-demand remote entanglement, coherent control of over ten ancillae qubits with minute-long coherence times and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. So far, these efforts have been stymied by qubit inhomogeneities, low device yield and complex device requirements. Here we introduce a process for the high-yield heterogeneous integration of ‘quantum microchiplets’—diamond waveguide arrays containing highly coherent colour centres—on a photonic integrated circuit (PIC). We use this process to realize a 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride PIC. Photoluminescence spectroscopy reveals long-term, stable and narrow average optical linewidths of 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited linewidth of 32 megahertz (93 megahertz). We show that inhomogeneities of individual colour centre optical transitions can be compensated in situ by integrated tuning over 50 gigahertz without linewidth degradation. The ability to assemble large numbers of nearly indistinguishable and tunable artificial atoms into phase-stable PICs marks a key step towards multiplexed quantum repeaters and general-purpose quantum processors

36 MATERIALS SCIENCE↗