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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Options for Radiation Tolerant High-Performance Memory

Memory technologies were reviewed for radiation effects performance in order to determine the most cost-efficient target for a possible memory investment targeted at creating a memory component of general applicability for space use. TID and SEL trends that had indicated improvement in intrinsic performance based on scaling cannot be trusted. SEE hardening of memory arrays is prohibitive in terms of cell-level power and area requirements. Radiation-hardened cells and custom controllers are recommended for future memory developments.

Some, Raphael↗
NASA NTRS2017

Iris Deep-Space Transponder for SLS EM-1 CubeSat Missions

Several key design upgrades have been recently made to the Iris Deep-Space Transponder baselined to be used on secondary payload missions of the upcoming Space Launch System Exploration Mission One (SLS EM-1). The Iris Transponder is a reconfigurable software-defined radio (SDR) designed for missions requiring interoperability with NASA's Deep Space Network (DSN) on X-band frequencies (7.2 GHz uplink, 8.4 GHz downlink). The transponder provides radiometric tracking support with the DSN to provide navigational products for precise orbit determination while performing standard uplink and downlink communications in a CubeSat/SmallSat-applicable package size. The recent hardware changes include a volume reduction of 30% from previous models, with the main transponder unit weighing less than 1.0 kg, while maintaining total ionizing dose (TID) radiation tolerance of >23 krads (Si) for deep-space missions. Lab tests indicate maximum downlink rates of up to 6.25 Msps can be supported by the transponder in conventional BPSK modulation, but most SLS EM-1 CubeSat missions are link-performance limited to less than 256 kbps. A prototype unit of the flight production units has been assembled and various performance and characterization tests are underway. This talk discusses the key design aspects and specifications of the Iris Transponder and presents preliminary results from early testing of the assembled transponder.

Kobayashi, M. Michael↗
NASA NTRS2021

Linear Systems LSK389 and LSK489 Dual N-Channel JFET Amplifier Total Ionizing Dose and Single-Event Effects Test Report

The purpose of these tests was to characterize the susceptibility of the LSK389 and LSK489 Dual N-Channel JFET from Linear Systems to Single-Event Latchup due to heavy ions and to Total Ionizing Dose (TID) degradation at -65 °C and intermediate dose rate. The test was carried out to assess suitability of the amplifiers for the Ocean Color instrument (OCI) on the Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) spacecraft.

Ray Ladbury↗
NASA NTRSDate not supplied

Progress Towards Prolonged Deployment of SiC JFET-R ICs Into Previously Inaccessible Hostile Environments

This invited presentation describes demonstration of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. SiC junction field effect transistor-resistor (JFET-R) ICs with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient [1], 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber [2], and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes [3]. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C T-span) without significant change in signal (input /output) or power supply voltages [4]. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards this end, the processing that forms the SiC JFETs and resistors (without interconnect) for the NASA Glenn “Generation 12” design prototype JFET-R ICs was conducted at GE Research. Once the COVID-delayed IC interconnect and bond pad fabrication processing on these wafers is completed at NASA Glenn, the resulting chips will be packaged and oven-tested [5]. It is expected that further technology transfer to complete commercial production will lower investment and risk barriers to useful application deployment. For NASA, an initial high-value deployment is opening the Venus surface to extended missions for robotic scientific exploration.

Silicon Carbide↗
NASA NTRS2020

In Situ Testing Methods for Mixed-Mode Harsh Environments

A review of the radiation effects investigation capabilities of the JPL Dynamitron Accelerator Facility are discussed. A process for its use in performing total ionizing dose (TID) studies are outlined. The results of radiation effects in complicated test systems where device effects may occur due to local system irradiation are also presented.

Wong, A. T.↗
NASA NTRS2022

Mission Radiation Environment Modeling and Analysis: Avionics Trade Study for GCD Rad-Neuro Project

The two main objectives of this trade study are characterizing the mission radiation environment for multiple Design Reference Missions (DRM) and analysis of radiation effects on avionics with the goal of producing radiation tolerant Neuromorphic Computing processor chips with innovative radiation-induced fault mitigation. The NASA process for defining radiation requirements for flight avionics is applied to this domain. The effects of trapped protons and electrons in the Van Allen radiation belts predominates in Low-Earth-Orbit (LEO) and the solar wind, solar flares and Galactic Cosmic Rays (GCRs) are the dominant radiation challenge in the open space between the planets of our solar system. The nature and energy of the particles that cause circuit upset and failure is very different in the two regimes. Two results are produced from the radiation models: determining the Total Integrated Dose (TID) experienced by avionics for a given DRM and predicting the Single Event Effects (SEE) rates for avionics during high rate exposure. These tools are applied to existing semiconductors and can be used for predicting the radiation performance of future semiconductors based on early radiation testing of new devices.

Space Radiation↗
NASA NTRS2022

Radiation Effects Characterization and System Architecture Options for the 7nm Snapdragon SA8155P Automotive Grade System on Chip (SoC)

The SA8155P SoC is a complex heterogeneous computational platform with CPUs, GPU, DSPs and NPU. The SA8155P is a 7 TOPS/7 Watts capable AI/ML platform and as such represents a game changing breakthrough in terms computational power for space applications. We characterize the TID and SEE effects of the Qualcomm SA8155P Automotive grade SoC. Individual sub-system testing as well as application specific full device testing was conducted. We also discuss the commercial and automotive recovery mechanisms that are available with the SA8155P SoC generation and how those can form the basis for resilient architecture options for use in future space missions

Allen, Greg↗
NASA NTRSDate not supplied

Radiation Effects Considerations for Instrumentation and Control in Space Nuclear Systems

Radiation effects in electrical, electronic, electro-motive, and electro-optical (EEEE) hardware encompass a complex variety of interactions, processes, environments, and an evolving landscape of relevant hardware. Appropriately mitigating the effects of radiation in sensors, data acquisition, and control hardware is among the most significant challenges associated with deploying space nuclear power and propulsion systems. The expertise within EEEE radiation effects disciplines require working knowledge that is at least as complex and diverse as the problem itself, but that should not dissuade stakeholders and engineers in adjacent disciplines from attempting to understand the general principles associated with the problem at hand. This brief overview seeks to bring to the foreground a set of relevant topics that are of special importance for space nuclear propulsion applications that involve high rates of neutron and gamma radiation. The unique set of environments and design requirements for space nuclear systems mean that the experience and utility for methods applied to typical spaceflight hardware or terrestrial nuclear systems must not be applied naively. Forward consideration on the applicability of testing methods applied to either existing or bespoke hardware is likely to drive early decisions on system-wide radiation effects mitigation strategies, and will influence procurement requirements for providers of radiation tolerant hardware who are unlikely to have experience in this unique set of environments. Radiation hardness assurance (RHA) guidance should be adapted and emphasize the importance of hardware testing in the relevant environment. These must consider the combined effects of temperature, total ionizing dose (TID), non-ionizing/displacement damage (TNID/DD), and single event effects (SEE), and should consider the impacts of flux (rate) in addition to cumulative effects.

Radiation↗
NASA NTRSDate not supplied

Solid State Drive Radiation Assurance With Active Testing

Automotive and industrial grade SSDs were tested for TID and SEE response at the assembly level to investigate radiation tolerance trends and explore radiation hardness assurance best practices in commercial memory devices. SSDs were installed in passive NVMe extenders to place only the drive in the beam line. A digital I/O module connected to the test computer provided inhibit signals to block both facility beam delivery and power while attempting recovery from any device failure conditions (e.g., failed write, failed read, or unresponsive device).

Edward P Wilcox↗
NASA NTRS2023

Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si Transistor

This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).

Kaitlyn L Ryder↗
NASA NTRSDate not supplied

Progress Towards SiC ASICs for Extreme Temperature and Radiation Environments

This presentation describes development and demonstrations of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. Silicon carbide (SiC) junction field effect transistor-resistor (JFET-R) ICs fabricated by NASA Glenn Research Center with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient, 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C temperature span) without significant change in signal (input /output) or power supply voltages. While the operating frequency and functional complexity is far below silicon-based ICs, these SiC application specific ICs (ASICs) are nevertheless becoming capable of providing unique and advantageous harsh-environment circuit functionality without cooling/sheltering overhead. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards manufacture, a majority of processing steps to realize the next SiC JFET-R IC prototype wafer run have been outsourced to commercial foundry. It is expected that further upscaling combined with technology transfer to commercial production will lower investment and risk barriers to useful application deployment.

high temperature↗
NASA NTRS2024

Solid State Drive Radiation Assurance With Active Testing

Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.

dose↗
DOE OSTI2024

INTEGRATION OF CONDUIT HYDROPOWER AND BATTERIES INTO IRRIGATION INFRASTRUCTURE

Irrigation districts, ditch companies, and other agricultural water providers across the West operate and maintain canals, ditches, and reservoirs that store and deliver water for agricultural production, municipal needs, and other purposes. Co-locating energy generation and storage with this infrastructure provides opportunities to improve resilience and reduce energy costs. This memo discusses two case studies of co-located infrastructure and their contexts. The first case study discusses the development of an integrated microgrid, hydropower, solar, and battery storage project in North Unit Irrigation District (NUID) in Oregon. The second case study discusses the development of a battery storage project in Tulelake Irrigation District (TID) in northern California. Together, these two projects demonstrate the potential for co-located energy and water infrastructure.

13 - HYDRO ENERGY↗
NASA NTRS1996

Global Ionosphere Perturbations Monitored by the Worldwide GPS Network

For the first time, measurements from the Global Positioning System (GPS) worldwide network are employed to study the global ionospheric total electron content(TEC) changes during a magnetic storm (November 26, 1994). These measurements are obtained from more than 60 world-wide GPS stations which continuously receive dual-frequency signals. Based on the delays of the signals, we have generated high resolution global ionospheric maps (GIM) of TEC at 15 minute intervals. Using a differential method comparing storm time maps with quiet time maps, we find that significant TEC increases (the positive effect ) are the major feature in the winter hemisphere during this storm (the maximum percent change relative to quiet times is about 150 percent).

GPS global positioning system TEC total electron c↗