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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Piloted Simulator Evaluation Results of Flight Physics Based Stall Recovery Guidance

In recent studies, it has been observed that loss of control in flight is the most frequent primary cause of accidents. A significant share of accidents in this category can be remedied by upset prevention if possible, and by upset recovery if necessary, in this order of priorities. One of the most important upsets to be recovered from is stall. Recent accidents have shown that a correct stall recovery maneuver remains a big challenge in civil aviation, partly due to a lack of pilot training. A possible strategy to support the flight crew in this demanding context is calculating a recovery guidance signal, and showing this signal in an intuitive way on one of the cockpit displays, for example by means of the flight director. Different methods for calculating the recovery signal, one based on fast model predictive control and another using an energy based approach, have been evaluated in four relevant operational scenarios by experienced commercial as well as test pilots in the Vertical Motion Simulator at NASA Ames Research Center. Evaluation results show that this approach could be able to assist the pilots in executing a correct stall recovery maneuver.

Lombaerts, Thomas↗
NASA NTRS2022

Space Induced Discharge Model to Be Used on Interface Circuit Vulnerability Assessment

Charging can occur in space due to plasma and high energy particles. Charging is especially severe in certain earth orbits such as geostationary orbit, medium earth orbit and highly inclined orbit. A spacecraft that travels to other planets such as Jupiter also encounters high level of charging due to Jupiter’s radiation belt. The major concern for spacecraft operation due to charging is the survival of sensitive electrical circuits. Dielectrics and floating metal can charge up and discharge onto interface circuits. The electrical circuits need to be evaluated for survival from the electrostatic-discharge (ESD) threat. Both ESD induced upset and damage need to be assessed. The interface circuits are often located inside a shielded unit in the spacecraft structure or a shielded vault with sufficient radiation shielding to avoid surface and internal charging. The materials external to the highly shielded area can charge up and discharge onto wires that can directly dissipate the ESD onto the interface circuits. Figure 1 shows a possible discharge mechanism onto the interfacing circuits. If the wire has an external shield or a coaxial line, some or most of the discharge can flow on the shield to chassis ground. There is always coupling from external discharge. If the wire has no shield, the discharge flows onto the interface circuit. Fig. 1 Possible discharge paths onto the interface circuits. The purpose of this article is to address how to model the ESD threat to be used as the discharge source onto the interface circuit based on the electron beam test data. Different models are needed for different impedances associated with the interface circuits. Once those models are derived, one needs to analyze the interface circuit with the corresponding model using an electrical simulation tool. Then, the circuit’s front-end components can be assessed for damage and upset. Upset is highly dependent on the circuit operation and system requirements, and thus it is not addressed any further. Damage of electrical parts is often rated under Human-Body-Model (HBM) ESD. One can utilize this industry-wide available information to assess the damage vulnerability due to space discharges. However, the HBM waveform does not always match the discharge waveform. To estimate the damage vulnerability of the circuit and set margin, one needs to compare the equivalent energy delivered to the victim between a HBM discharge and the results from an ESD source model based on actual discharges. This paper presents such a comparison for a few select cases.

Xie, Julie↗
NASA NTRS2006

Single Event Effects Test Results for Advanced Field Programmable Gate Arrays

Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

Field Programmable Gate Arrays↗
NASA NTRS1974

Turbulence flight director analysis and preliminary simulation

A control column and trottle flight director display system is synthesized for use during flight through severe turbulence. The column system is designed to minimize airspeed excursions without overdriving attitude. The throttle system is designed to augment the airspeed regulation and provide an indication of the trim thrust required for any desired flight path angle. Together they form an energy management system to provide harmonious display indications of current aircraft motions and required corrective action, minimize gust upset tendencies, minimize unsafe aircraft excursions, and maintain satisfactory ride qualities. A preliminary fixed-base piloted simulation verified the analysis and provided a shakedown for a more sophisticated moving-base simulation to be accomplished next. This preliminary simulation utilized a flight scenario concept combining piloting tasks, random turbulence, and discrete gusts to create a high but realistic pilot workload conducive to pilot error and potential upset. The turbulence director (energy management) system significantly reduced pilot workload and minimized unsafe aircraft excursions.

Johnson, D. E.↗
NASA NTRS1975

Exploratory flight investigation of aircraft response to the wing vortex wake generated by the augmentor wing jet STOL research aircraft

A brief exploratory flight program was conducted at Ames Research Center to investigate the vortex wake hazard of a powered-lift STOL aircraft. The study was made by flying an instrumented Cessna 210 aircraft into the wake of the augmentor wing jet STOL research aircraft at separation distances from 1 to 4 n.mi. Characteristics of the wake were evaluated in terms of the magnitude of the upset of the probing aircraft. Results indicated that within 1 n.mi. separation the wake could cause rolling moments in excess of roll control power and yawing moments equivalent to rudder control power of the probe aircraft. Subjective evaluations by the pilots of the Cessna 210 aircraft, supported by response measurements, indicated that the upset caused by the wake of the STOL aircraft was comparable to that of a DC-9 in the landing configuration.

Jacobsen, R. A.↗
NASA NTRS1975

Hazard criteria for wake vortex encounters

A piloted, motion-base simulation was conducted to evaluate the ability of simulators to produce realistic vortex encounters and to develop criteria to define hazardous encounters. Evaluation of the simulation by pilots experienced in vortex encounters confirmed the capability of the simulator to realistically reproduce wake vortex encounters. A boundary for encounter hazard based on subjective pilot opinion was identified in terms of maximum bank angle. For encounter altitudes from 200 to 500 ft (61.0 to 152.4 m), tentative hazard criteria established for visual flight conditions indicated that the acceptable upset magnitude increased nearly linearly with increasing altitude. The data suggest that the allowable upsets under instrument conditions no greater than 50 percent of that allowable under visual conditions.

Sammonds, R. I.↗
NASA NTRS1977

A flight investigation of the wake turbulence alleviation resulting from a flap configuration change on a B-747 aircraft

A flight test investigation was conducted to evaluate the effects of a flap configuration change on the vortex wake characteristics of a Boeing 747 (B-747) aircraft as measured by differences in upset response resulting from deliberate vortex encounters by a following Learjet aircraft and by direct measurement of the velocities in the wake. The flaps of the B-747 have a predominant effect on the wake. The normal landing flap configuration produces a strong vortex that is attenuated when the outboard flap segments are raised; however, extension of the landing gear at that point increases the vortex induced upsets. These effects are in general agreement with existing wind tunnel and flight data for the modified flap configuration.

Jacobsen, R. A.↗
NASA NTRS1977

Voltages and currents induced by lightning

Indirect effects of lightning, the damage to or malfunction of electrical equipment that results from lightning flashes, were considered. These effects range from tripped circuit breakers to computer upset, to physical damage to input or output circuits of electronic equipment. Voltages and currents induced by lightning on the electrical wiring of the aircraft were emphasized regardless of whether or not such voltages and currents cause damage or upset of electrical equipment.

Franklin A Fisher↗
NASA NTRS1977

Unsuccessful Concepts for Aircraft Wake Vortex Minimization

Exploratory concepts are described which were investigated to achieve a reduction in the vortex induced rolling upsets produced by heavy aircraft trailing vortexes. The initial tests included the use of mass injection, oscillating devices, wingtip shape design, interacting multiple vortexes, and end plates. Although later refinements of some of these concepts were successful, initial test results did not indicate a capability of these concepts to significantly alter the vortex induced rolling upset on a following aircraft.

Dunham, R. E., Jr.↗
NASA NTRS1981

Lightweight terminal board

Sandwich construction for terminal boards reduces fabrication time and produces thinner boards with better insulation consistency, better apperance, and less weight. New method also permits closer spacing of terminal posts. Method starts with thin (0.031 inch) sheet of polyimide and consists of drilling, inserting terminal posts, upsetting ends, and then bonding second sheet to upset side as continuous insulation member. Resulting sandwich is lighter and much cheaper than single board.

Drechsler, J. D.↗
NASA NTRS1981

Cosmic ray induced errors in I2L microprocessors and logic devices

Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.

Price, W. E.↗
NASA NTRS1983

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗
NASA NTRS1985

Cosmic ray environment model for Earth orbit

A set of computer codes, which include the effects of the Earth's magnetic field, used to predict the cosmic ray environment (atomic numbers 1 through 28) for a spacecraft in a near-Earth orbit is described. A simple transport analysis is used to approximate the environment at the center of a spherical shield of arbitrary thickness. The final output is in a form (a Heinrich Curve) which has immediate applications for single event upset rate predictions. The codes will culate the time average environment for an arbitrary number (fractional or whole) of circular orbits. The computer codes were run for some selected orbits and the results, which can be useful for quick estimates of single event upset rates, are given. The codes were listed in the language HPL, which is appropriate or a Hewlett Packard 9825B desk top computer. Extensive documentation of the codes is available from COSMIC, except where explanations have been deferred to references where extensive documentation can be found. Some qualitative aspects of the effects of mass and magnetic shielding are also discussed.

Edmonds, L.↗
NASA NTRS1984

SEU of complementary GaAs static RAMs due to heavy ions

The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.

Zuleeg, R.↗
NASA NTRS1986

Radiation Hardening of Computers

Single-event upsets reduced by use of oversize transistors. Computers made less susceptible to ionizing radiation by replacing bipolar integrated circuits with properly designed, complementary metaloxide-semiconductor (CMOS) circuits. CMOS circuit chips made highly resistant to single-event upset (SEU), especially when certain feedback resistors are incorporated. Redesigned chips also consume less power than original chips.

Nichols, D. K.↗
NASA NTRS1985

Ultrasonic angle beam standard reflector

A method that provides an impression profile in a reference standard material utilized in inspecting critically stressed components with pulsed ultrasound is described. A die stamp having an I letter is used to impress the surface of a reference material. The die stamp is placed against the surface and struck with an inertia imparting member to impress the I in the reference standard material. Upset may appear on the surface as a result of the impression and is removed to form a smooth surface. The stamping and upset removal is repeated until the entire surface area of a depth control platform on the die stamp uniformly contacts the material surface. The I impression profile in the reference standard material is utilized for reflecting pulsed ultrasonic beams for inspection purposes.

Berry, R. F., Jr.↗
NASA NTRS1989

Effects of space radiation on electronic microcircuits

The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.

Kolasinski, W. A.↗
NASA NTRS1989

Variation in SEU sensitivity of dose-imprinted CMOS SRAMs

The authors report on an experimental study of dose-induced changes in SEU (single-event-upset) sensitivity of CMOS static RAMs. Two time regimes were investigated following exposure of memories to cobalt-60 gamma rays: the near term, within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze in the damage state until SEU measurements could be made prior to annealing. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46 percent and asymptotic cross sections increased by factors of two to four (unannealed samples).

Stassinopoulos, E. G.↗