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DOE OSTI2022

A density-wave-like transition in the polycrystalline V 3 Sb 2 sample with bilayer kagome lattice

Recently, transition-metal-based kagome metals have aroused much research interest as a novel platform to explore exotic topological quantum phenomena. Here we report on the synthesis, structure, and physical properties of a bilayer kagome lattice compound V 3 Sb 2 . The polycrystalline V 3 Sb 2 samples were synthesized by conventional solid-state-reaction method in a sealed quartz tube at temperatures below 850 °C. Measurements of magnetic susceptibility and resistivity revealed consistently a density-wave-like transition at T dw ≈ 160 K with a large thermal hysteresis, even though some sample-dependent behaviors were observed presumably due to the different preparation conditions. Upon cooling through T dw , no strong anomaly in lattice parameters and no indication of symmetry lowering were detected in powder x-ray diffraction measurements. This transition can be suppressed completely by applying hydrostatic pressures of about 1.8 GPa, around which no sign of superconductivity was observed down to 1.5 K. Specific-heat measurements revealed a relatively large Sommerfeld coefficient γ = 18.5 mJ∙mol –1 ∙K –2 , confirming the metallic ground state with moderate electronic correlations. Density functional theory calculations indicate that V 3 Sb 2 shows a non-trivial topological crystalline property. Furthermore, our study makes V 3 Sb 2 a new candidate of metallic kagome compound to study the interplay between density-wave-order, nontrivial band topology, and possible superconductivity.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Predicting tungsten erosion and leakage properties for the new V-shaped small angle slot divertor in DIII-D

Impurity transport modeling of the new tungsten (W)-coated, V-shaped small angle slot (SAS) divertor in the DIII-D tokamak was conducted using the SOLPS-ITER plasma edge code package and the DIVIMP impurity tracking code. The inboard baffle of the current SAS divertor will be shifted closer to the outboard baffle, creating a V-corner at the slot vertex. In addition, the outboard baffle will be coated with 10–15 μm of W for experiments studying high-Z sourcing and leakage in a closed divertor. Modeling of the 'SAS-VW' divertor predicts that these changes to the inner baffle will reduce W gross erosion by 40× relative to the existing SAS divertor when the outer strike point (OSP) is at the V-corner and the ion B × ∇B drift is towards the divertor, driven primarily by significant cooling near the slot vertex. Most W erosion in SAS-VW is expected to occur near the slot entrance, which may pose a higher risk to core contamination than W eroded deeper in the slot. Furthermore, adding a new sheath-based prompt redeposition model increases the sensitivity of redeposition estimates to near-target plasma conditions and may provide more accurate predictions of net erosion. Moving the OSP outboard from the slot vertex ~4 cm onto the W-coated region yields a 40× increase in the gross erosion rate and a 50% decrease in the core leakage fraction. Thus slight variations in strike point location may counteract the potential benefits of the tightly-baffled V slot on minimizing erosion. This impurity transport modeling provides useful guidance for future experiments on the SAS-VW divertor focused on high-Z erosion/redeposition, scrape-off layer transport, and core leakage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

Large binocular telescope observations of new six compact star-forming galaxies with [Ne v ] λ3426 Å emission

ABSTRACT We report the discovery of [Ne v] λ3426 emission, in addition to He ii λ4686 emission, in six compact star-forming galaxies. These observations considerably increase the sample of eight such galaxies discovered earlier by our group. For four of the new galaxies, the optical observations are supplemented by near-infrared spectra. All galaxies, but one, have H ii regions that are dense, with electron number densities of ∼ 300–700 cm−3. They are all characterized by high H β equivalent widths EW(H β) ∼ 190–520 Å and high O32 = [O iii] λ5007/[O ii] λ3727 ratios of 10–30, indicating young starburst ages and the presence of high ionization radiation. All are low-metallicity objects with 12 + logO/H = 7.46–7.88. The spectra of all galaxies show a low-intensity broad component of the H α line and five of six objects show Wolf–Rayet features. Comparison with photoionization models shows that pure stellar ionization radiation from massive stars is not hard enough to produce such strong [Ne v] and He ii emission in our galaxies. The [Ne v] λ3426/He ii λ4686 flux ratio of ∼1.2 in J1222+3602 is consistent with some contribution of active galactic nucleus ionizing radiation. However, in the remaining five galaxies, this ratio is considerably lower, $\lesssim$ 0.4. The most plausible models are likely to be non-uniform in density, where He ii and [Ne v] lines are emitted in low-density channels made by outflows and illuminated by harder ionizing radiation from radiative shocks propagating through these channels, whereas [O iii] emission originates in denser regions exposed to softer stellar ionizing sources.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2025

Topological protection in a Landau flat band at v = 7/11, a candidate filling factor for unconventional correlations

Strong interactions in Landau flat bands are known to stabilize correlated states that do not form in other types of flat bands. We report hallmarks of topological protection at the Landau level filling factor v = 7/11 in a 2D electron system. The v = 7/11 filling factor is the particle-hole conjugate of v = 4/11⁠, a filling factor intensely studied for the possibility of realizing unconventional electronic correlations. Our data establish a new instance for an unusual fractional quantum Hall state and opens up possibilities for the study of unconventional correlations in an enlarged parameter space. We report and discuss transport signatures developing at other filling factors of interest v = 7/11, 5/8⁠, and 8/13⁠, which however in our sample do not exhibit topological protection.

composite fermions↗

DOE OSTI2022

Suppression of ferromagnetism governed by a critical lattice parameter in CeTiGe 3 with hydrostatic pressure or V substitution

We combine structural and magnetic measurements to compare the different magnetic phase diagrams between the pressure and substitution studies in CeTiGe 3 . We report on the structural, magnetic, and electrical transport properties of single crystals of CeTi 1–x V x Ge 3 (x = 0, 0.1, 0.2, 0.3, 0.4, 0.9, and 1), and of polycrystalline samples (x = 0.5, 0.6, 0.7, 0.8), as well as structural properties of CeTiGe 3 under pressure up to 9 GPa. The ferromagnetic ordering in CeTiGe 3 is suppressed with V doping in CeTi 1–x V x Ge 3 , and suggests a possible ferromagnetic quantum critical point near x = 0.45. We perform a detailed crystalline electric field (CEF) analysis, and the magnetic susceptibility data in pure CeTiGe 3 and CeVGe 3 can be well explained by the CEF model. The proposed CEF energy levels suggest that there is a gradual change of the ground state from |±5/2 in CeTiGe 3 to |±1/2 in CeVGe 3 , and a suppression of CEF splitting energies near the quantum critical region. When hydrostatic pressure is used instead of chemical substitution, the quantum critical point is avoided by the appearance of magnetic phases above around 4.1 GPa. In the substitution study, the ferromagnetic and antiferromagnetic regions are well separated, whereas they touch in the pressure study. We observe a different trend in the temperature dependence of the resistivity maximum in both studies, suggesting that the CEF splitting energy is suppressed by V substitution but enhanced by pressure. Here, we also observe different responses in lattice constants between the two studies, highlighting the fact that substitution effects cannot be reduced to chemical pressure effects only. Nevertheless, when the magnetic phase diagrams of both hydrostatic pressure and substitution are compared, we find a common critical lattice constant c = 5.78 Å where the ferromagnetic ordering is suppressed in both studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

System-size scan of D meson R AA and v n using PbPb, XeXe, ArAr, and OO collisions at energies available at the CERN Large Hadron Collider

Here, experimental measurements indicate no suppression (e.g. R pPb ~ 1) but a surprisingly large D meson v 2 was measured in pPb collisions. In order to understand these results we use Trento+v-USPhydro+DAB-MOD to make predictions and propose a system size scan at the LHC involving 208 PbPb, 129 XeXe, 40 ArAr, and 16OO collisions. We find that the nuclear modification factor approaches unity as the system size is decreased, but nonetheless, in the 0–10% most central collisions v 2 {2} is roughly equivalent regardless of system size. These results arise from a rather non-trivial interplay between the shrinking path length and the enhancement of eccentricities in small systems at high multiplicity. Finally, we also find a surprising sensitivity of D mesons v 2 {2} in 0–10% at p T = 2–10 GeV to the slight deformation of 129 Xe recently found at LHC.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2024

Domain nucleation across the metal-insulator transition of self-strained V 2 O 3 films

Bulk V 2 O 3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at T C ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V 2 O 3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V 2 O 3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V 2 O 3 , especially the strain-induced large variations along the c axis. Finally, engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

First-principles thermodynamics of Al 10 ⁢V: An analytical treatment of localized anharmonic modes

Many complex intermetallic structures possess cagelike environments that can host additional guest atoms. In Al 10 ⁢V, these atoms give rise to low-frequency, localized vibrations (Einstein modes) that dominate the thermodynamic response at low temperature. They become imaginary under volume expansion as temperature rises, invalidating the harmonic approximation. Here, we develop a framework to incorporate these strongly anharmonic vibrational modes into first-principles thermodynamic calculations. By explicitly modeling the cage potential and solving the associated Schrödinger equation numerically, we compute the full anharmonic free energy contribution and demonstrate its impact on the thermodynamic behavior of Al 10⁢ V. This allows us to examine structures with different cage fillings and construct the Al-V phase diagram in the relevant composition range. Our results reproduce key experimental signatures, including the anomalous rise in the thermal expansion coefficient and heat capacity at low temperatures, and reveal that the presence and the extent of cage filling by guest atoms is essential to stabilizing the Al 10 ⁢V phase at elevated temperatures.

anharmonic lattice dynamics↗

DOE OSTI2024

Latent Pitfalls in Microstructure-Based Modeling for Thermally Aged 9Cr-1Mo-V Steel (Grade 91)

A case study was conducted on a mechanistic model development that predicted tensile strength deterioration with thermal aging of 9Cr-1Mo-V steel in supporting the 60-year design life expected for advanced nuclear reactors. For property prediction beyond practical testing times, mechanistic modeling is highly desired, as it taps into the physics of structure–property relationships and therefore can generate reliable results for extrapolation. Meanwhile, as mechanistic models are often complicated, reflecting the intricacy of microstructure and strengthening mechanisms, pitfalls that are difficult to detect often exist. Here, this paper discusses latent pitfalls that are common in mechanistic modeling or specific in this 9Cr-1Mo-V case development through using the American Society of Mechanical Engineers verification and validation in computational solid mechanics (ASME V&V 10) standard for evaluating credibility of modeling in materials engineering. Suggestions are also made for enhancing reliability of microstructure-based modeling.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Surface Film Formation on Al-V Alloys with Far-From-Equilibrium Microstructure

Nanocrystalline supersaturated Al-V alloys produced by high-energy ball milling have been reported to exhibit enhanced corrosion resistance and mechanical properties compared to commercial Al alloys. Corrosion of passive alloys such as Al-V alloy relies on the characteristics of the surface film, which is studied using scanning/transmission electron microscopy and time-of-flight secondary ion mass spectrometry. The effect of microstructure and composition on the surface film has been investigated after different immersion periods (30 min, 2 h, and 1 day) in 0.1 M NaCl. The surface film was complex and composed of oxidized Al and V. The heterogeneous surface film was observed due to the presence of secondary phases and initiation of localized corrosion. The void formation was observed beneath the surface film that would potentially cause pitting corrosion. The generation of nano-sized voids was dependent on grain orientation. Compared to pure Al, the chloride penetration is suppressed in Al-V alloys. The effect of composition and microstructure on surface film formation and attendant corrosion behavior is discussed herein.

36 MATERIALS SCIENCE↗

DOE OSTI2026

V-HAMSTeR v1.0.0

V-HAMSTeR is a bioinformatics software tool designed to predict the hosts of viruses directly from genomic sequences. It can be used by researchers to predict animal, prokaryotic, plant, protist or fungal viral hosts including viruses that may be fragmented or discovered in environmental metagenomic datasets. Features & Uses: The software employs a novel dual-stream deep learning architecture that dynamically fuses implicit sequence embeddings from a genomic foundation model with 13 explicit, handcrafted biological features (e.g., coding density and strand switch rates). To ensure maximum reliability, V=HAMSTeR deploys a 5-fold deep ensemble calibrated via Joint Temperature Scaling, providing users with statistically rigorous confidence probabilities. It also features an automated sequence chunking and mean-pooling module to seamlessly process variable-length contigs. Advantages Over Similar Technologies: Existing tools (e.g., IPEV, RNAVirHost) typically rely on either basic k-mers or isolated neural networks. V-HAMSTeR's hybrid architecture captures both broad genomic context and specific biological motifs that standalone foundation models often miss. Furthermore, unlike competitor tools that struggle with incomplete data or exhibit extreme overconfidence, V-HAMSTeR is explicitly benchmarked and mathematically calibrated for fragmented assemblies (1kb–10kb). This makes it uniquely robust, accurate, and trustworthy for the messy reality of real-world environmental viromics.

Grigson, Susie [Lawrence Berkeley National Laborat↗

DOE OSTI2023

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗

DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗

DOE OSTI2020

Enhanced Arsenic (III and V) Removal in Anoxic Environments by Hierarchically Structured Citrate/FeCO 3 Nanocomposites

Novel citrate/FeCO 3 nanocomposites (CF-NCs) were synthesized for effective arsenic (III and V) sorption with constant addition of Fe2+ into HCO 3 - solution in the presence of citrate. This paper is the first report on the formation of CF-NCs, and in this study we investigate the mechanisms of arsenic uptake by the sorbent under anoxic conditions through various solid- and liquid-phase spectroscopic methods, including X-ray absorption spectroscopy. In CF-NCs, citrate was found to be incorporated into the structure of siderite (up to 17.94%) through (Fe 2+ citrate) - complexes. The crystal morphology of rhombohedral siderite was changed into hierarchically nanostructured spherical aggregates composed of several sheet-like crystals, which improved the surface reactivity in the presence of sufficient citrate. Compared to pure siderite (15.2%), enhanced removal of As(III) in the range of 19.3% to 88.2% was observed, depending on the amount of incorporated citrate. The maximum sorption capacities of CF-NCs for As(III) and As(V) were 188.97 and 290.22 mg/g, respectively, which are much higher than those of previously reported siderite-based adsorbents. It was found that arsenic (III and V) sorption on CF-NCs occurred via bidentate corner-sharing surface complexation, predominantly without changes in the arsenic oxidation states. These results suggest that arsenic (III and V) can be attenuated by siderite in anoxic environments, and this attenuation can be even more effective when siderite is modified by incorporation of organic compounds such as citrate.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2021

Impact of Hydration on Supported V 2 O 5 /TiO 2 Catalysts as Explored by Magnetic Resonance Spectroscopy

Supported vanadium oxide catalysts are important industrial materials for a wide array of chemical transformations. The condition of surface hydration is of particular interest as a reflection of the state of a freshly manufactured catalysts prior to its activation in catalytic reactors or under conditions of photocatalysis where surface vandia are exposed to moisture. Under such conditions, the surface vanadia species undergo structural changes as evidenced by 51 V MAS NMR in this study. For low surface vanadia densities on titania, a modest trend towards the formation of dimeric and oligomeric vanadia species was observed under hydrated conditions when compared to the corresponding dehydrated catalyst, which contains a large abundance of monomeric vanadia species. The incorporation of tungsten oxide to the V 2 O 5 /TiO 2 catalyst with low surface vanadia density, however, is found to better stabilize the surface vanadia species on the titania support upon hydration than its tungsta-free counterpart. This stabilization is not an intrinsic property of more extensively oligomerized surface vanadia species in the presence of tungsten oxide, evidenced by conditions of high concentrations of surface vanadia oligomers on titania that exhibit dramatic structural changes upon hydration. At high surface vanadia coverage under hydrated environments, the simultaneous observation of crystalline V 2 O 5 nanoparticles and a mobile phase of surface vanadia species is apparent, where vanadia species are dissolved in the thin hydration layer on the titania support. These new findings have broad implications on the behavior of other metal oxide species on high surface oxide supports under hydrated conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Determining g A / g V with High-Resolution Spectral Measurements Using a LiInSe 2 Bolometer

Neutrinoless double beta decay (0νββ) processes sample a wide range of intermediate forbidden nuclear transitions, which may be impacted by quenching of the axial vector coupling constant (g A /g V ), the uncertainty of which plays a pivotal role in determining the sensitivity reach of 0νββ experiments. Here we present measurements performed on a high-resolution LiInSe 2 bolometer in a “source = detector” configuration to measure the spectral shape of the fourfold forbidden β decay of 115 In . The value of g A /g V is determined by comparing the spectral shape of theoretical predictions to the experimental β spectrum taking into account various simulated background components as well as a variety of detector effects. We find evidence of quenching of g A /g V at >5 σ with a model-dependent quenching factor of 0.655 ± 0.002 as compared to the free-nucleon value for the interacting shell model. We also measured the 115 In half-life to be [5.18 ± 0.06(stat) $^{+0.005}_{- 0.015}$(sys)] x 10 14 yr within the interacting shell model framework. This Letter demonstrates the power of the bolometeric technique to perform precision nuclear physics single-β decay measurements, which along with improved nuclear modeling can help reduce the uncertainties in the calculation of several decay nuclear matrix elements including those used in 0νββ sensitivity calculations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2020

Materials Data on V(PO3)3 by Materials Project

V(PO3)3 crystallizes in the triclinic P-1 space group. The structure is three-dimensional. there are two inequivalent V3+ sites. In the first V3+ site, V3+ is bonded to six O2- atoms to form VO6 octahedra that share corners with six PO4 tetrahedra and an edgeedge with one VO6 octahedra. There are a spread of V–O bond distances ranging from 1.95–2.24 Å. In the second V3+ site, V3+ is bonded to six O2- atoms to form VO6 octahedra that share corners with six PO4 tetrahedra and an edgeedge with one VO6 octahedra. There are a spread of V–O bond distances ranging from 2.00–2.16 Å. There are six inequivalent P5+ sites. In the first P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with two equivalent VO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 20–51°. There are a spread of P–O bond distances ranging from 1.50–1.63 Å. In the second P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with three VO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 46–54°. There are a spread of P–O bond distances ranging from 1.50–1.58 Å. In the third P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with two VO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 42–44°. There are a spread of P–O bond distances ranging from 1.51–1.61 Å. In the fourth P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share a cornercorner with one VO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedral tilt angles are 40°. There are a spread of P–O bond distances ranging from 1.46–1.66 Å. In the fifth P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with three VO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 40–57°. There are a spread of P–O bond distances ranging from 1.50–1.59 Å. In the sixth P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share a cornercorner with one VO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedral tilt angles are 16°. There are a spread of P–O bond distances ranging from 1.45–1.66 Å. There are eighteen inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one V3+ and one P5+ atom. In the second O2- site, O2- is bonded in a distorted bent 150 degrees geometry to two P5+ atoms. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to two P5+ atoms. In the fourth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one V3+ and one P5+ atom. In the fifth O2- site, O2- is bonded in a bent 150 degrees geometry to one V3+ and one P5+ atom. In the sixth O2- site, O2- is bonded in a single-bond geometry to one P5+ atom. In the seventh O2- site, O2- is bonded in a bent 150 degrees geometry to two P5+ atoms. In the eighth O2- site, O2- is bonded in a bent 150 degrees geometry to two P5+ atoms. In the ninth O2- site, O2- is bonded in a bent 150 degrees geometry to two P5+ atoms. In the tenth O2- site, O2- is bonded in a distorted trigonal planar geometry to two V3+ and one P5+ atom. In the eleventh O2- site, O2- is bonded in a distorted linear geometry to one V3+ and one P5+ atom. In the twelfth O2- site, O2- is bonded in a distorted trigonal planar geometry to two V3+ and one P5+ atom. In the thirteenth O2- site, O2- is bonded in a bent 120 degrees geometry to two P5+ atoms. In the fourteenth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one V3+ and one P5+ atom. In the fifteenth O2- site, O2- is bonded in a single-bond geometry to one P5+ atom. In the sixteenth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one V3+ and one P5+ atom. In the seventeenth O2- site, O2- is bonded in a bent 120 degrees geometry to one V3+ and one P5+ atom. In the eighteenth O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one V3+ and one P5+ atom.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Materials Data on V(BS2)2 by Materials Project

V(BS2)2 crystallizes in the monoclinic C2/m space group. The structure is two-dimensional and consists of one V(BS2)2 sheet oriented in the (0, 0, 1) direction. V2+ is bonded to six S2- atoms to form VS6 octahedra that share corners with eight equivalent BS5 trigonal bipyramids, edges with two equivalent VS6 octahedra, and faces with two equivalent BS5 trigonal bipyramids. There are four shorter (2.37 Å) and two longer (2.45 Å) V–S bond lengths. B3+ is bonded to five S2- atoms to form distorted BS5 trigonal bipyramids that share corners with four equivalent VS6 octahedra, edges with four equivalent BS5 trigonal bipyramids, and a faceface with one VS6 octahedra. The corner-sharing octahedra tilt angles range from 58–66°. There are a spread of B–S bond distances ranging from 2.00–2.26 Å. There are two inequivalent S2- sites. In the first S2- site, S2- is bonded in a 4-coordinate geometry to one V2+ and three equivalent B3+ atoms. In the second S2- site, S2- is bonded in a 4-coordinate geometry to two equivalent V2+ and two equivalent B3+ atoms.

36 MATERIALS SCIENCE↗