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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum

We investigate the effect of Be on the valence band maximum (VBM) of MgZnO by measuring the band offsets of Mg{sub x}Zn{sub 1−x}O/Be{sub x}Mg{sub y}Zn{sub 1−x−y}O heterojunctions using X-ray photoelectron spectroscopy measurements. Mg{sub x}Zn{sub 1−x}O and Be{sub x}Mg{sub y}Zn{sub 1−x−y}O films have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The valence band offset (ΔE{sub V}) of Mg{sub 0.15}Zn{sub 0.85}O (E{sub g} = 3.62 eV)/Be{sub 0.005}Mg{sub 0.19}Zn{sub 0.805}O (E{sub g} = 3.73 eV) heterojunction is 0.01 eV and Be{sub 0.005}Mg{sub 0.19}Zn{sub 0.805}O has a lower VBM. The increased Mg composition is the main factor for the reduction of VBM. The VBM of Mg{sub x}Zn{sub 1−x}O is lower by 0.03 eV with the enlargement of E{sub g} from 3.62 eV to 3.73 eV by increasing Mg composition. Considering the effect of increased Mg composition, it is concluded that the little amount of Be makes the VBM go up by 0.02 eV when the E{sub g} of the alloy is 3.73 eV. The ΔE{sub V} of Mg{sub 0.11}Zn{sub 0.89}O (E{sub g} = 3.56 eV)/Be{sub 0.007}Mg{sub 0.12}Zn{sub 0.873}O (E{sub g} = 3.56 eV) heterojunction is calculated to be 0.03 eV and Be{sub 0.007}Mg{sub 0.12}Zn{sub 0.873}O has a higher VBM than Mg{sub 0.11}Zn{sub 0.89}O, which means that a little amount Be lifts the VBM by 0.03 eV when the E{sub g} of the alloy is 3.56 eV. The experimental measurements have offered a strong support for the theoretical research that alloying Be in Mg{sub x}Zn{sub 1−x}O alloys is hopeful to form a higher VBM and to enhance the p-type dopability of MgZnO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The electronic characterization of biphenylene—Experimental and theoretical insights from core and valence level spectroscopy

In this paper, we provide detailed insights into the electronic structure of the gas phase biphenylene molecule through core and valence spectroscopy. By comparing results of X-ray Photoelectron Spectroscopy (XPS) measurements with ΔSCF core-hole calculations in the framework of Density Functional Theory (DFT), we could decompose the characteristic contributions to the total spectra and assign them to non-equivalent carbon atoms. As a difference with similar molecules like biphenyl and naphthalene, an influence of the localized orbitals on the relative XPS shifts was found. The valence spectrum probed by photoelectron spectroscopy at a photon energy of 50 eV in conjunction with hybrid DFT calculations revealed the effects of the localization on the electronic states. Using the transition potential approach to simulate the X-ray absorption spectroscopy measurements, similar contributions from the non-equivalent carbon atoms were determined from the total spectrum, for which the slightly shifted individual components can explain the observed asymmetric features.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Intermediate valence in single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} (0 ≤ x ≤ 1)

Single crystals of (Lu{sub 1−x}Y b{sub x}){sub 3}Rh{sub 4}Ge{sub 13} were characterized by magnetization, specific heat, and electrical resistivity measurements. Doping Yb into the non-magnetic Lu{sub 3}Rh{sub 4}Ge{sub 13} compound tunes this cubic system’s properties from a superconductor with disordered metal normal state (x < 0.05) to a Kondo for 0.05 ≤ x ≤0.2 and intermediate valence at the highest Yb concentrations. The evidence for intermediate Yb valence comes from a broad maximum in the magnetic susceptibility and X-ray photoelectron spectroscopy. Furthermore, the resistivity displays a local maximum at finite temperatures at intermediate compositions x, followed by apparent metallic behavior closest to the Yb end compound in the series.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The observation of valence band change on resistive switching of epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} film using removable liquid electrode

The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO{sub 3} (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Coupled-cluster based basis sets for valence correlation calculations

Novel basis sets are generated that target the description of valence correlation in atoms H through Ar. The new contraction coefficients are obtained according to the Atomic Natural Orbital (ANO) procedure from CCSD(T) (coupled-cluster singles and doubles with perturbative triples correction) density matrices starting from the primitive functions of Dunning et al. [J. Chem. Phys. 90, 1007 (1989); ibid. 98, 1358 (1993); ibid. 100, 2975 (1993)] (correlation consistent polarized valence X-tuple zeta, cc-pVXZ). The exponents of the primitive Gaussian functions are subject to uniform scaling in order to ensure satisfaction of the virial theorem for the corresponding atoms. These new sets, named ANO-VT-XZ (Atomic Natural Orbital Virial Theorem X-tuple Zeta), have the same number of contracted functions as their cc-pVXZ counterparts in each subshell. The performance of these basis sets is assessed by the evaluation of the contraction errors in four distinct computations: correlation energies in atoms, probing the density in different regions of space via 〈r{sup n}〉 (−3 ≤ n ≤ 3) in atoms, correlation energies in diatomic molecules, and the quality of fitting potential energy curves as measured by spectroscopic constants. All energy calculations with ANO-VT-QZ have contraction errors within “chemical accuracy” of 1 kcal/mol, which is not true for cc-pVQZ, suggesting some improvement compared to the correlation consistent series of Dunning and co-workers.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

Epitaxial growth and electronic properties of mixed valence YbAl{sub 3} thin films

We report the growth of thin films of the mixed valence compound YbAl{sub 3} on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy, we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both f{sup 13} and f{sup 12} final states establishing that YbAl{sub 3} is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Universal behavior of chalcogenides of rare-earth metals in the transition to a state with intermediate valence at high pressures

Precision measurements of resistivity, thermopower, and volume are performed for TmS, TmSe, and TmTe under a hydrostatic pressure up to 8 GPa. Comparison of the transport properties and volume of TmTe and SmTe in the valence transition region demonstrates a complete analogy up to quantitative coincidence. It is shown that the thermopower of all thulium and samarium chalcogenides in the lattice collapse region and in subsequent rearrangement of the electron spectrum in a wide range of pressures follow a universal dependence corresponding the passage of the Fermi level through the peak of the density of states (DOS). The results are considered in the context of ideas about the exciton nature of the intermediate valence in chalcogenides of rare-earth metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Valence-band offsets in strained SiGeSn/Si layers with different tin contents

Admittance spectroscopy is used to study hole states in Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y}/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} layers and Si on the tin content is described by the expression ΔE{sub V}{sup exp} = (0.21 ± 0.01) + (3.35 ± 7.8 × 10{sup –4})y eV.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Soft X-Ray Spectroscopy of Low-Valence Nickelates

Low-valence nickelates—including infinite-layer (IL) and trilayer (TL) compounds—are longstanding candidates for mimicking the high-temperature superconductivity of cuprates. A recent breakthrough in the field came with the discovery of superconductivity in hole-doped IL nickelates. Yet, the degree of similarity between low-valence nickelates and cuprates is the subject of a profound debate for which soft x-ray spectroscopy experiments at the Ni L - and O K -edge provided critical input. In this review, we will discuss the essential elements of the electronic structure of low-valance nickelates revealed by x-ray absorption spectroscopy (XAS) and resonant inelastic x-ray scattering (RIXS). Furthermore, we will review magnetic excitations observed in the RIXS spectra of IL and TL nickelates, which exhibit characteristics that are partly reminiscent of those of cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Effects of Metamorphism on the Valence and Coordination of Titanium in Ordinary Chondrites

Despite years of study, the conditions under which ordinary chondrites were metamorphosed from grade 3 to grade 6 are not well defined. Wide ranges of peak temperature are inferred for each grade. The long-popular 'onion shell' model, in which higher metamorphic grade is attributed to greater depths of origin, implies a corresponding decrease in cooling rate with increasing grade, and there is disagreement as to whether or not this is observed. Redox conditions during chondrite metamorphism are also not well understood. Some workers have reported evidence for reduction, presumably by carbon, with increase in grade from 3-4, followed by oxidation during metamorphism to higher grades, but other work indicates little variation in fO{sub 2} as a function of metamorphic grade. During our investigation of the valence of Ti in planetary materials, we found high proportions of Ti{sup 3+} in olivine and pyroxene in chondrules in Semarkona (LL3.0) and low proportions in New Concord (L6) olivine, suggesting that Ti was oxidized during ordinary chondrite metamorphism. We have undertaken a study of L and LL chondrites of grades 3-6 to see how Ti valence and coordination vary with grade and to see if the variations can be used to constrain conditions of chondrite metamorphism.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal

Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their colossal magnetoresistance (CMR). A double exchange interaction underlies the CMR in manganates, whereby charge transport is enhanced when the spins on neighboring Mn 3+ and Mn 4+ ions are parallel. Prior efforts to find different materials or mechanisms for CMR resulted in a much smaller effect. Here an enormous CMR at low temperatures in EuCd 2 P 2 without manganese, oxygen, mixed valence, or cubic perovskite structure is shown. EuCd 2 P 2 has a layered trigonal lattice and exhibits antiferromagnetic ordering at 11 K. The magnitude of CMR (10(4)%) in as-grown crystals of EuCd 2 P 2 rivals the magnitude in optimized thin films of manganates. In this work, the magnetization, transport, and synchrotron X-ray data suggest that strong magnetic fluctuations are responsible for this phenomenon. The realization of CMR at low temperatures without heterovalency leads to a new regime for materials and technologies related to antiferromagnetic spintronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Dynamical Bonding Driving Mixed Valency in a Metal Boride

Abstract Samarium hexaboride is an anomaly, having many exotic and seemingly mutually incompatible properties. It was proposed to be a mixed‐valent semiconductor, and later a topological Kondo insulator, and yet has a Fermi surface despite being an insulator. We propose a new and unified understanding of SmB 6 centered on the hitherto unrecognized dynamical bonding effect: the coexistence of two Sm−B bonding modes within SmB 6 , corresponding to different oxidation states of the Sm. The mixed valency arises in SmB 6 from thermal population of these distinct minima enabled by motion of B. Our model simultaneously explains the thermal valence fluctuations, appearance of magnetic Fermi surface, excess entropy at low temperatures, pressure‐induced phase transitions, and related features in Raman spectra and their unexpected dependence on temperature and boron isotope.

Robinson, Paul J.↗
DOE OSTI2020

Strong Valence Band Convergence to Enhance Thermoelectric Performance in PbSe with Two Chemically Independent Controls

Abstract We present an effective approach to favorably modify the electronic structure of PbSe using Ag doping coupled with SrSe or BaSe alloying. The Ag 4d states make a contribution to in the top of the heavy hole valence band and raise its energy. The Sr and Ba atoms diminish the contribution of Pb 6s 2 states and decrease the energy of the light hole valence band. This electronic structure modification increases the density‐of‐states effective mass, and strongly enhances the thermoelectric performance. Moreover, the Ag‐rich nanoscale precipitates, discordant Ag atoms, and Pb/Sr, Pb/Ba point defects in the PbSe matrix work together to reduce the lattice thermal conductivity, resulting a record high average ZT avg of around 0.86 over 400–923 K.

Luo, Zhong‐Zhen↗
DOE OSTI2020

Strong Valence Band Convergence to Enhance Thermoelectric Performance in PbSe with Two Chemically Independent Controls

We present an effective approach to favorably modify the electronic structure of PbSe using Ag doping coupled with SrSe or BaSe alloying. The Ag 4d states make a contribution to in the top of the heavy hole valence band and raise its energy. The Sr and Ba atoms diminish the contribution of Pb 6s2 states and decrease the energy of the light hole valence band. This electronic structure modification increases the density-of-states effective mass, and strongly enhances the thermoelectric performance. Furthermore, the Ag-rich nanoscale precipitates, discordant Ag atoms, and Pb/Sr, Pb/Ba point defects in the PbSe matrix work together to reduce the lattice thermal conductivity, resulting a record high average ZT avg of around 0.86 over 400–923 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

{sup 125}Te-NMR Study in Novel Superconductor Pb{sub 1−x}Tl{sub x}Te with Valence Skipping Dopants

Pb{sub 1−x}Tl{sub x}Te is an anomalous low carrier density superconductor for which the origin of the superconductivity is not understood. Thallium is the only dopant to cause superconductivity in PbTe, suggesting that these specific impurities have a unique effect on the electronic states. Systematic {sup 125}Te-NMR studies on single-crystallines Pb{sub 1−x}Tl{sub x}Te (x = 0, 0.35, 1.0 at%) reveal that the Tl dopants induce spatially inhomogeneous electronic states around the Tl dopants. In the superconducting sample at x = 1.0 at%, {sup 125}Te nuclear spin relaxation rate (1/T{sub 1}T) in the vicinity of the Tl dopants is unexpectedly enhanced below ∼10 K. This coincides with the temperature below which the resistivity exhibits an upturn. By contrast, such anomalies were not detected in the non-superconducting sample at x = 0.35 at%. These observations can be consistently explained by charge Kondo effect, in which two nearly degenerate valence states of the Tl dopant form a resonating valence state upon cooling below 10 K. Based on these observations, we suggest that the coherent hopping of 6s-electron pair may provide the pairing interaction (i.e., a negative-U scenario), leading to the anomalously high T{sub c} found for Pb{sub 1−x}Tl{sub x}Te.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Entanglement between valence and sea quarks in hadrons of 1+1 dimensional QCD

The conceptual interpretation of valence- and sea-quark separation, which is a key aspect of the parton model and of an intuitive picture of hadron structure, becomes obscured by quantum effects in QCD. This suggests that there may be measures of entanglement between quark degrees of freedom that are present in QCD, but absent in the intuitive picture with a clear valence-sea (VS) separation. In this paper, we define the first rigorous measure of VS entanglement in QCD in an attempt to bring conceptual clarity to this issue, and, potentially, to find a measure of the applicability of the parton model to QCD bound states. This VS entanglement vanishes in the large-N c limit, and it remains low when finite-N c states resemble their large-N c counterparts. We perform a numerical study of VS entanglement in 1 + 1 dimensional discrete light-cone quantized QCD, and in the process develop a method for building the color-singlet basis of 1 + 1d QCD that is manifestly complete and orthogonal by construction. We calculate this VS entanglement entropy for the first time and find that it is relatively low for the first few excited states of both mesons and baryons compared to all other states in the spectrum, with the VS entropy of ground state hadrons providing a minimum. We also see that for ground state mesons the entropy is well described in the 1/N c approximation. These results suggest that low energy hadrons may be the only QCD bound states for which the large-N c expansion, and perhaps the parton model, provide an accurate description. This work also provides the first evidence that the VS entanglement entropy of QCD in 3 + 1d, which would likely serve as an order parameter for the transition between quark and hadron degrees of freedom, may be perturbatively accessible through a large-N c expansion.

1+1 dimensional QCD↗
DOE OSTI2012

Manganese valence and coordination structure in Mn,Mg-codoped {gamma}-AlON green phosphor

The valence and coordination structure of manganese in a Mn,Mg-codoped {gamma}-AlON spinel-type oxynitride green phosphor were studied by synchrotron X-ray diffraction and absorption fine structure measurements. The absorption edge position of the XANES revealed the bivalency of Mn. Two cation sites are available in the spinel structure for cation doping: a tetrahedral site and an octahedral site. The pre-edge of the XANES and the distance to the nearest neighbor atoms obtained from the EXAFS measurement showed that Mn was situated at the tetrahedral site. Rietveld analysis showed that the vacancy occupied the octahedral site. The preferential occupation of the tetrahedral site by Mn and the roles of N and Mg are discussed in relation to the spinel crystal structure. - Graphical Abstract: Fourier transform of EXAFS of Mn K-edge for Mn,Mg-codoped green phosphor and Mn coordination structure. Highlights: Black-Right-Pointing-Pointer Mn, Mg-codoped {gamma}-AlON green phosphor for white LED. Black-Right-Pointing-Pointer The valence of Mn is divalent. Black-Right-Pointing-Pointer Mn occupies the tetrahedral site in the spinel structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗