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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Alkali-induced catalytic tuning at metal and metal oxide interfaces

Alkali metals have been recognized as effective promoters in heterogeneous catalysis, capable of enhancing catalytic activity and tuning product distributions. Over the past few decades, significant efforts have been made aiming to reveal the mechanisms underlying the promoting effect of alkalis. However, the roles that alkali metals play in the catalytic process remain elusive due to challenges in capturing their catalytic behaviours upon exposure to reactive environments. This review summarizes recent surface science and theoretical studies of alkali (potassium, cesium)-decorated metal and metal oxide model catalysts, revealing the crucial tuning by alkalis of activity and selectivity for CO 2 hydrogenation. The analysis of electronic structures identifies the selective binding mechanism of the positively charged alkali ions on the surface, being able to reduce the surface work function and lead to strong electron polarization on the surfaces. Depending on the alkali–support interaction, the deposition of alkalis can selectively modify the bindings of reaction intermediates involved in CO 2 hydrogenation via the interplay among the ionic, covalent and electrostatic tunings. As a result, CO 2 can be effectively activated and converted into diverse products at the alkali–support interface, ranging from formic acid to methanol and ethanol. The identified selective bond-tuning advances the application of alkalis in promoting catalytic activity and controlling catalytic selectivity at alkali–support interfaces.

03 NATURAL GAS↗
DOE OSTI2026

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1−x ) is of interest because it is one of the widest-gap II–VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter deposit N:ZnSe x Te 1−x films, varying Se/(Se + Te), or x, from 0 to 0.7, N 2 flow rate from 0.25 to 0.75 sccm, and substrate temperature from 250 to 370 °C. Increasing x from 0 to 0.39 at the optimal temperature of 370 °C and N 2 flow rate of 0.5 sccm leads to 1.3 atomic % nitrogen incorporation and wurtzite phase stabilization. Such doping and alloying increases hole concentration from 3 × 10 18 cm −3 to 3 × 10 19 cm −3 , although mobility drops from 0.4 to 0.02 cm 2 V −1 s −1 . Our sputtered N:ZnSe 0.38 Te 0.62 has an absorption onset 0.1 eV greater than the ZnTe value of 1.87 eV. Increasing x from 0 to 0.51 enhances transmittance by moving absorption onset from 1.87 to 2.11 eV with diminished band gap bowing likely due to disorder, and increases the work function from 5.12 to 5.42 eV. This combination of tunable properties makes sputtered N:ZnSe x Te 1−x desirable for transparent p-type contacts in polycrystalline Cd(Se,Te) optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Laser-stimulated photodetachment of electrons from the negatively charged dielectric substrates

The photon-stimulated emission of bulk electrons has been extensively studied for various types of materials, while the photodetachment of surplus surface electrons has not been fully explored. The photodetachment barrier energy is commonly defined by the surface electron affinity of material, which is typically less than the work function and more pronounced for non-conducting substrates and in environments with a continuous flux of electrons to the surface, such as in gas discharge plasmas. Herein, it is experimentally shown that the photodetachment yield of surplus electrons created by plasma-induced charging of non-conductive surfaces of dielectric materials depends on the initial surface charge density and do not correlate with the tabulated affinity values of these materials under gas discharge charging conditions. In cocnclusion, this result obtained using laser-stimulated photodetachment for fused silica, boron nitride, and alumina, is critically important for the understanding of charging and discharging dynamics, secondary electron emission, and photo emission effects affecting plasma–wall interactions relevant to surface and capacitively coupled discharges, dusty plasmas, electrostatic probe diagnostics, and applications for plasma processing of materials, plasma propulsion, and gas breakdown.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Triboplasma assisted chemical conversion in granular systems: a semi-analytic model

We present a semi-analytic model for a novel plasma-assisted chemical conversion pathway using triboplasmas generated in granular flows. Triboelectric charge relaxation is a well known phenomena where the potential generated from contact charging of particles exceeds the breakdown voltage of the background gas. In this work, we extend the triboelectric charge relaxation theory to include non equilibrium plasma energy and particle balance equations to predict the formation of dissociated and excited species that act as precursors to chemical conversion, for example in plasma-assisted ammonia synthesis. Our example case study with nitrogen background gas and teflon/aluminum tribomaterial system yielded high excited nitrogen species densities per collision that are comparable to current plasma-assisted conversion pathways. We also present a regime diagram for various gases where Paschen breakdown parameters are used to determine whether triboplasmas can be formed for a given effective work-function difference between two materials. Our sensitivity studies indicate particle velocity, particle radius, solids fraction and space charge effects play a critical role in overall plasma densities and excited species production.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Design, Modeling, and Control of a Hardware-in-the-Loop Testbed for Off-Road Vehicles

This paper presents the design, modeling, and control of a hardware-in-the-loop (HIL) testbed for off-road vehicles. The proposed HIL testbed employs a transient hydrostatic dynamometer to load a diesel engine to emulate any loading cycles of a wheel loader, which is a representative off-road vehicle. A fully validated wheel loader model is used to calculate the engine load, including both the drive and work functions. Besides, iterative learning control (ILC) has been designed for the loading torque tracking of the hydrostatic dynamometer to ensure accurate emulation of real-world operation scenarios. The developed HIL testbed is used to demonstrate more than 26% energy benefits of automated wheel loaders through systematic optimization compared with human-operated wheel loaders. As a result, this HIL testbed serves as a robust platform for advancing research and development across various off-road vehicles, including excavators, tractors, and harvesters.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

In Situ Plasma processing of SRF cuperconducting cavities at JLAB, 2024 Update

Jefferson Lab has an ongoing R&D program in plasma processing. The experimental program investi-gated processing using argon/oxygen and heli-um/oxygen gas mixtures. Plasma processing is a com-mon technique where the free oxygen produced by the plasma breaks down and removes hydrocarbons from surfaces. This increases the work function and reduces the secondary emission coefficient. The initial focus of the effort was processing C100 cavities by injecting RF power into the high order mode (HOM) coupler ports. We also developed the methods for establishing a plasma in C75 cryomodules where the RF power is injected via the fundamental power-coupler. Four C100 cryomodules were in situ processed in the CE-BAF accelerator in May 2023 with the cryomodules returning to an operational status in Sept. 2023. The overall operational energy gain for the four cryomod-ules was 49 MeV. Methods, systems and results from processing cryomodules in the CEBAF accelerator and vertical test results are presented. Current status and future plans are discussed.

Powers, T.↗
DOE OSTI2024

AN OVERVIEW OF PLASMA PROCESSING OF SRF CAVITIES AT JLAB

Plasma processing is a common technique where the free oxygen produced in a low-pressure RF plasma breaks down and removes hydrocarbons from surfaces. This increases the work function and reduces the secondary emission coefficient of the treated surfaces. Jefferson Lab has an ongoing R&D program in plasma processing. The experimental program investigated processing using argon/oxygen and helium/oxygen gas mixtures. The initial focus of the effort was processing C100 cavities by injecting RF power into the HOM coupler ports. We also developed the methods for establishing a plasma C75 cavities where the RF power is injected via the fundamental power-coupler. As part of the process development we processed, three C100 cryomodules in our off-line cryomodule test facility. In May 2023 we processed four C100 cryomodules in-situ in the CEBAF accelerator with the cryomodules returning to an operational status in Sept. 2023. The cumulative improvement in field emission free operation, as measured on a cavity by cavity basis, was 59 MeV or 24%. We recently started processing 7 cryomodules in the CEBAF accelerator in August 2024. Methods systems and results from processing cryomodules and individual cavities in the vertical test will be presented. Current status and future plans will also be presented.

Ganey, Tiffany↗
DOE OSTI2025

Two-Dimensional Silk Crystal Films as Matrix Layer for High-Performance Microelectronics

This study explores a bio-inspired approach for memristive devices by combining Keggin-type polyoxometalates (POMs)-[SiW 12 O 40 ] 4 (POM-T) and [PW 12 O 40 ] 3 (POM-P), with silk fibroin (SF) to create 2D SF–POM layers on highly ordered pyrolytic graphite (HOPG) as resistive switching layers for memristors. We propose that the ordered SF layer template 0D POMs facilitate the formation of conductive filaments, thereby enhancing the variability of the manufactured memristors. AFM analysis revealed that both SF and SF–POM layers shared similar morphologies, while SF–POM–T formed larger aggregates, likely due to the stronger acidity of POM-T, which probably caused SF to aggregate and alter its secondary structure. Scanning Kelvin probe microscopy (SKPM) revealed that POMs reduced the contact potential difference of HOPG, resulting in lower work functions. Compared to an SF device, the SF–POM–P device showed improved memristive behavior, with a larger current gap and good repeatability over multiple sweeps; whereas the SF–POM–T device did not exhibit memristor activity, likely due to acidity-induced disruption of the SF template’s order and CF formation. More importantly, SF–POM–P devices also demonstrated programmable memristive states. Finally, combining simulation-driven memristor modeling, we showcase a co-design workflow for advancing bioinspired memristors through new materials design, synthesis, and device modeling and development.

36 MATERIALS SCIENCE↗