DOE OSTI2020
Si is the dominant PV technology, now and for the foreseeable future, due to its extensive manufacturing infrastructure, supply chain, feedstock availability, and highly optimized degree of fabrication processes, which altogether has produced an economic scenario where PV electricity generation is often cheaper than conventional fossil based generation. In many places, the overarching goal of grid parity has been achieved, but further improvement in performance-cost metrics are still needed to sustain the continued LCOE reductions needed to not only compete with conventional generation, but displace it on a global scale; a matter of critical importance if we stand any hope of slowing climate change. Nevertheless, single-junction Si PV is already nearing its physical limit, both in performance and cost, and is thus cannot meet these long-term goals alone. To this end, we are working on the development of monolithic III-V/Si tandem solar cells, which improve upon the performance of pure Si by providing enhanced utilization (reduced thermalization) of high-energy photons. This architecture nominally combines the substantial existing knowledge base, manufacturing infrastructure, and low cost of Si PV with the high efficiencies afforded by the well-established multijunction approach — the only proven way to break the single-junction limit. Although the metal-halide perovskite/Si tandem architecture has garnered substantial attention in recent years, serious questions regarding reliability and service lifetime remain, whereas III-V PV has a proven track record, including in the harsh concentrator and space environments. Additionally, there are multiple fabrication approaches to producing III-V/Si tandem cells, but we are focused on monolithic epitaxial integration as it is the most likely to yield the lowest ultimate LCOE in a fully mature, scaled technology. In this work we have produced multiple generations of GaAsP/Si tandem solar cells, demonstrating a more than 10% absolute AM1.5G efficiency improvement within the time frame of the project, including two verified world records. We have done this using industry-standard fabrication methods, showing that this platform can ultimately be manufactured at scale using existing or only slightly upgraded Si and III-V tooling. Our scientific and engineering advances across a range of fundamental and applied areas – III-V/Si heteroepitaxial integration, defect control in metamorphic III-V epitaxy, fundamental materials-oriented solar cell design and modeling methodology, and more – have created clear pathways for continued advances toward the goal of >30% AM1.5G cell efficiency (and >25% module) and will serve to inform the broader research community for well beyond this immediate application. Techno-economic modeling indicates that our approach can indeed meet SunShot/SETO LCOE targets, but as with any “post-Si” technology there are difficult, but not insurmountable barriers, requiring continued focused research and development efforts.