Search NASA⌕ Search

SEARCH · Search NASA

Results for “conductive thin films”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells

The impact of moisture ingress on the surface of copper indium gallium diselenide (CIGS) solar cells was studied. While industry-scale modules are encapsulated in specialized polymers and glass, over time, the glass can break and the encapsulant can degrade. During such conditions, water can potentially degrade the interior layers and decrease performance. The first layer the water will come in contact with is the transparent conductive oxide (TCO) layer. To simulate the impact of this moisture ingress, complete devices were immersed in deionized water. To identify the potential sources of degradation, a common window layer for CIGS devices—a bilayer of intrinsic zinc oxide (i-ZnO) and conductive indium tin oxide (ITO)—was deposited. The thin films were then analyzed both pre and post water soaking. To determine the extent of ingress, dynamic secondary ion mass spectroscopy (SIMS) was performed on completed devices to analyze impurity diffusion (predominantly sodium and potassium) in the devices. The results were compared to device measurements, and indicated a degradation of device efficiency (mostly fill factor, contrary to previous studies), potentially due to a modification of the alkali profile.

14 SOLAR ENERGY↗

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗

Phase-resolved electrical detection of coherently coupled magnonic devices

We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/Permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n=1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py- or YIG-dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Signatures of Coherent Phonon Transport in Ultralow Thermal Conductivity Two-Dimensional Ruddlesden–Popper Phase Perovskites

An emerging class of methylammonium lead iodide (MAPbI 3 )-based Ruddlesden-Popper (RP) phase perovskites, BA 2 MA n-1 Pb n I 3n+1 (n = 1-7), exhibit enhanced stability to environmental conditions relative to MAPbI 3 , yet still degrade at elevated temperatures. Here, we experimentally determine the thermal conductivities of these layered RP phases for n = 1-6, where n defines the number of repeated perovskite octahedra per layer. We measure thermal conductivities of 0.37 ± 0.13/0.12, 0.17 ± 0.08/0.07, 0.21 ± 0.05/0.04, and 0.19 ± 0.04/0.03 W/m∙K in thin films of n = 1-4 and 0.08 ± 0.06/0.04, 0.06 ± 0.04/0.03, 0.06 ± 0.03/0.03, and 0.08 ± 0.07/0.04 W/m∙K in single crystals of n = 3-6. With the exception of n = 1, these thermal conductivities are lower than the range of 0.34-0.50 W/m∙K reported for single-crystal MAPbI 3 . Reduced-order lattice dynamics modeling suggests that the initially decreasing trend of thermal conductivity in similarly oriented perovskites with increasing n may result from the transport properties of coherent phonons, emergent from the superstructure, that do not scatter at the interfaces of organic butylammonium chains and perovskite octahedra. Reduced group velocity of coherent phonons in n = 3-6, a consequence of band flattening in the phonon dispersion, is primarily responsible for their ultralow thermal conductivities. Similar effects on thermal conductivity have been experimentally demonstrated in deposited superlattices, but never in naturally defined materials such as RP phases. GIWAXS measurements reveal that higher n RP phase thin films are less orientationally controlled and therefore possess apparently elevated thermal conductivities relative to single crystals of the same n.

2D perovskites↗

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. Here we report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 (O,S) 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Development of a Model for Irradiation-Induced Grain Growth in UO2 thin films

In this work, we develop a model of irradiation-induced grain growth in UO2 using the MARMOT mesoscale nuclear materials simulation tool. We couple the existing thermally activated grain growth model with a heat conduction model that includes random heat sources representing thermal spikes. We compare the results with the irradiation data on UO2 thin films.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Autonomous alignment and healing in multilayer soft electronics using immiscible dynamic polymers

Self-healing soft electronic and robotic devices can, like human skin, recover autonomously from damage. While current devices use a single type of dynamic polymer for all functional layers to ensure strong interlayer adhesion, this approach requires manual layer alignment. In this study, we used two dynamic polymers, which have immiscible backbones but identical dynamic bonds, to maintain interlayer adhesion while enabling autonomous realignment during healing. These dynamic polymers exhibit a weakly interpenetrating and adhesive interface, whose width is tunable. When multilayered polymer films are misaligned after damage, these structures autonomously realign during healing to minimize interfacial free energy. Finally, we fabricated devices with conductive, dielectric, and magnetic particles that functionally heal after damage, enabling thin-film pressure sensors, magnetically assembled soft robots, and underwater circuit assembly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ultra-Fast Vertical Ordering of Lamellar Block Copolymer Films on Unmodified Substrates

To utilize the full potential of block copolymer (BCP) thin films for use in technological devices ranging from ion conduction membranes, transistors to nanowire array antennas, rapid self- assembly of lamellar block copolymers (l-BCPs) with vertically oriented lamellar domains on a variety of unmodified substrates is needed. l-BCPs have an inherently larger interfacial area for transport compared to their cylindrical counterpart. Our observations demonstrate that the as-cast weakly ordered vertically oriented state of l-BCP films of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) from directional evaporation of select solvents, act as “seed templates” for their ultra-fast evolution (~30 s) into well-ordered vertically oriented nanostructures, using a thermal gradient-based Cold Zone Annealing (CZA) technique. Furthermore, vertical lamellae are obtained on unmodified substrates, Quartz and Kapton, and the kinetics of l-BCP ordering is much faster by CZA as compared to the isotropic oven annealing. The rapid ordering kinetics of vertical l-BCPs is tested and found applicable to different molecular weights and film thicknesses ranging from 20 nm to 480 nm, which ultimately flip over to their equilibrium parallel morphology at upper limits of annealing times. This rapid ordering strategy for vertical orientation of l-BCPs using roll-to-roll compatible CZA would be highly relevant for fundamental studies of interfacial transport as well as for industrial applications from membranes to nanowires.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Photoluminescence study of solution-deposited Cu 2 BaSnS 4 thin films

To experimentally identify the character of radiative transitions in trigonal Cu 2 BaSnS 4 , we conduct temperature and excitation intensity dependent photoluminescence (PL) measurements in the temperature range of 15–300 K. The low-temperature near band edge PL spectrum is interpreted as the free exciton at 2.11 eV and the bound exciton at 2.08 eV, coupled with associated phonon-assisted transitions. In the low energy region, we assign the dominant defect emission at 1.96 eV to donor–acceptor-pair recombination and the weak broad emission at 1.6 eV to the free-to-bound transition. The activation energies and temperature shift for the radiative transitions are determined and discussed. Above 90 K, the free exciton recombination becomes the dominant radiative transition, with its energy shift mainly governed by the contribution of optical phonons.

36 MATERIALS SCIENCE↗

Physical and Mechano-Electrochemical Phenomena of Thin Film Lithium-Ceramic Electrolyte Constructs

While a small number of solid electrolytes exhibit high ionic conductivity (~1mS cm at 298K), few are stable against Li metal. The garnet-type solid electrolyte, based on the nominal formula Li 7 La 3 Zr 2 O 12 (LLZO), is unique in that it is a fast ion conductor and – as we demonstrated in our recent project (DE-EE-00006821) – is stable against Li. Moreover, our former project successfully demonstrated a decrease in Li-LLZO interface resistance from 12,000 to 2 Ohms cm 2 and stable cycling at 1 mA cm 2 for 100 cycles (+/- 15 µm Li per cycle). Although the past project (DE-EE-00006821) demonstrated LLZO is a viable solid electrolyte for enabling batteries using metallic Li, the studies used thick pellets (1mm) and thick anodes (~500 µm). We believe that to achieve a step increase in technology readiness level (TRL), the same performance characteristics previously shown should be demonstrated in technologically relevant cells, e.g. thin LLZO and thin Li. The goal of this project is to acquire a deep fundamental understanding of the physical and mechano-electrochemical phenomena that control the performance of cells consisting of thin LLZO (~10 µm), thin Li anodes (~20 µm) and thin solid-state composite cathodes. If successful, the knowledge gained in this project will guide closely related commercialization efforts to scale the production of LLZO-based solid-state batteries.

25 ENERGY STORAGE↗

Ambipolar Electrochemistry of Pre‐Intercalated Ti 3 C 2 T x MXene in Ionic Liquid Electrolyte

Abstract Cation intercalation with or without redox remains the dominant charge storage mechanism for two‐dimensional (2D) Ti 3 C 2 T x MXene. Anion‐based charge storage remains unexplored due to intrinsic negative surface charge of MXenes preventing spontaneous intercalation of anions and irreversible oxidation of Ti at anodic potentials in aqueous electrolytes. In this work, we report on the ambipolar electrochemical behavior of the Ti 3 C 2 T x in ionic liquid electrolyte over a 2.5 V electrochemically stable window. The experiments are conducted on a thin Ti 3 C 2 T x film current collector coated with an electroactive layer of small flakes (∼150 nm) of Ti 3 C 2 T x pre‐intercalated with 1‐ethyl‐3‐methylimidazolium bis‐(trifluoromethylsulfonyl)‐imide (EMIM‐TFSI) ionic liquid. Couples of redox peaks with a very small potential separation during the voltage sweep are observed at high negative (−0.75 V vs. Ag wire) and high positive (+0.75 V vs. Ag wire) potentials. Our experimental electrochemical data combined with density functional theory (DFT) calculations suggest feasibility of pseudo‐intercalation of TFSI anions between Ti 3 C 2 T x flakes. This study provides a pathway for elucidating anion intercalation for different MXene chemistries in solvent‐free electrolytes, which can lead to development of MXene based energy storage devices with improved performance.

Electrochemistry↗

Electrically Insulated Catalyst–Ionomer Anode Interfaces toward Durable Alkaline Membrane Electrolyzers

Anion-exchange-membrane water electrolysis (AEMWE) is an emerging technology for scalable hydrogen production. AEMWE has poor durability when operating without supporting electrolyte due to the oxidation of ionomers and membranes in contact with the anode oxygen evolution reaction (OER) catalyst. We report a new “passivated” anode architecture for AEMWE where the OER catalysts and ionomers are physically separated with a thin film amorphous oxide coating that is electrically insulating but conductive to hydroxide ions. We find that 2–3 nm of HfO x passivation layers show sufficient hydroxide ion transport to minimally limit the cell performance while suppressing ionomer degradation with both Ir (500 mA·cm –2 for 40 h) and CoO x (1.0 A·cm –2 for 100 h) model porous-transport-layer-supported catalysts in AEMWE. As a result, this interfacial engineering approach guides electrode design to improve the durability of AEMWE, particularly for systems operating with pure-water feed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Observation of spin-momentum locked surface states in amorphous Bi 2 Se 3

Crystalline symmetries have played a central role in the identification and understanding of quantum materials. Here we investigate whether an amorphous analogue of a well-known three-dimensional strong topological insulator has topological properties in the solid state. We show that amorphous Bi 2 Se 3 thin films host a number of two-dimensional surface conduction channels. Our angle-resolved photoemission spectroscopy data are consistent with a dispersive two-dimensional surface state that crosses the bulk gap. Spin-resolved photoemission spectroscopy shows this state has an anti-symmetric spin texture, confirming the existence of spin-momentum locked surface states. We discuss these experimental results in light of theoretical photoemission spectra obtained with an amorphous topological insulator tight-binding model, contrasting it with alternative explanations. In conclusion, the discovery of spin-momentum locked surface states in amorphous materials opens a new avenue to characterize amorphous matter and triggers the search for an overlooked subset of quantum materials outside of current classification schemes.

36 MATERIALS SCIENCE↗

Time-domain thermoreflectance

Time-domain thermoreflectance (TDTR) has been instrumental in measuring the heat transfer properties of bulk and nanostructured materials over the past two decades. In this Primer, we describe the optical and thermal aspects of TDTR, with an in-depth discussion on the theory, apparatus design and implementation. We present examples that illustrate the ability of TDTR to measure thermal conductivity tensors, thermal conductance across material interfaces, and volumetric heat capacity of thin films, 2D materials and bulk materials. The ability of TDTR to spatially resolve thermal properties is useful for studying heterogeneous material systems, such as materials processed in or subjected to extreme environments. We consider current limitations of pump–probe metrologies and discuss recent advancements of TDTR, such as time-resolved magneto-optic Kerr effect (TR-MOKE), beam-offset TDTR/TR-MOKE, steady-state thermoreflectance, frequency-domain thermoreflectance and laser-flash TDTR. Lastly, we present an outlook on anticipated technological developments to further expand the ability of TDTR to measure nanoscale thermal properties.

42 ENGINEERING↗

Electrodynamics of Thin Sheets of Twisted Material

We construct a minimal theory describing the optical activity of a thin sheet of a twisted material, the simplest example of which is twisted bilayer graphene. We introduce the notion of "twisted electrical conductivity", which parametrizes the parity-odd response of a thin film to a perpendicularly falling electromagnetic waves with wavelength larger than the thickness of the sheet. Here, we show that the low-frequency Faraday rotation angle has different behaviors in different phases. For an insulator, the Faraday angle behaves as ω 2 at low frequencies, with the coefficient being determined by the linear relationship between a component of the electric quadrupole moment and the external electric field. For superconductors, the Faraday rotation angle is constant when the frequency of the incoming EM waves is below the superconducting gap and is determined by the coefficient of the Lifshitz invariant in the Ginzburg-Landau functional describing the superconducting state. In the metallic state, we show that the twisted conductivity is proportional to the "magnetic helicity" (scalar product of the velocity and the magnetic moment) of the quasiparticle, averaged around the Fermi surface. The theory is general and is applicable to strongly correlated phases.

Son, Dam Thanh↗

Silicon Dioxide Deposited Using Atmospheric Pressure Plasma Chemical Vapor Deposition for Improved Adhesion and Water Intrusion Resistance for Lightweight Manufacturing

This work aims to demonstrate the barrier coating, and adhesion promoting properties of silica-based coatings deposited using an atmospheric pressure plasma torch (APPT). This is achieved by applying an industrial grade adhesive to silica thin films deposited, on the surfaces to be joined, using atmospheric pressure plasma chemical vapor deposition (APP-CVD), to make single joint lap shear samples of different metal combinations commonly found in lightweight manufacturing such as aluminum and magnesium as well as steel. To deposit these thin films, two separate silicon based organic precursors, hexamethyldisiloxane (HMDSO), and tetraehylorthosilicate (TEOS), are used. Here, samples are bonded using DuPont Betamate 1486 adhesive, and the lap shear results for these films are compared to the lap shear results of a chemically cleaned control using the same adhesive. The APPT uses a microwave power supply and gas mixtures of N 2 and Ar. The adhesion of the films are tested using lap shear, and elevated temperature water soaks are conducted on the joints as well to simulate environmental exposure. Lap shear results from samples with silica thin films max shear stress are 25%-115% increase compared to control samples depending on material. After exposure to water soak the max shear strength of the joints decreased by less than 15%, which demonstrates the films capabilities as a water barrier. Film morphology is examined using Scanning Electron Microscopy (SEM), and the film’s composition and approximate thickness are obtained using Rutherford Backscattering Spectroscopy (RBS).

36 MATERIALS SCIENCE↗

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗

Solid-source metal-organic MBE for elemental Ir and Ru films

Thin films of elemental metals play a very important role in modern electronic nano-devices as conduction pathways, spacer layers, spin-current generators/detectors, and many other important functionalities. In this work, by exploiting the chemistry of solid metal-organic source precursors, we demonstrate the molecular beam epitaxy synthesis of elemental Ir and Ru metal thin films. The synthesis of these metals is enabled by thermodynamic and kinetic selection of the metal phase as the metal-organic precursor decomposes on the substrate surface. Film growth under different conditions was studied using a combination of in situ and ex situ structural and compositional characterization techniques. The critical role of substrate temperature, oxygen reactivity, and precursor flux in tuning film composition and quality is discussed in the context of precursor adsorption, decomposition, and crystal growth. Computed thermodynamics quantifies the driving force for metal or oxide formation as a function of synthesis conditions and changes in chemical potential. These results indicate that bulk thermodynamics are a plausible origin for the formation of Ir metal at low temperatures, while Ru metal formation is likely mediated by kinetics.

Materials Science↗