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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2022

Irradiation-induced grain boundary facet motion: In situ observations and atomic-scale mechanisms

Metals subjected to irradiation environments undergo microstructural evolution and concomitant degradation, yet the nanoscale mechanisms for such evolution remain elusive. Here, we combine in situ heavy ion irradiation, atomic resolution microscopy, and atomistic simulation to elucidate how radiation damage and interfacial defects interplay to control grain boundary (GB) motion. While classical notions of boundary evolution under irradiation rest on simple ideas of curvature-driven motion, the reality is far more complex. Focusing on an ion-irradiated Pt Σ3 GB, we show how this boundary evolves by the motion of 120° facet junctions separating nanoscale {112} facets. Our analysis considers the short- and mid-range ion interactions, which roughen the facets and induce local motion, and longer-range interactions associated with interfacial disconnections, which accommodate the intergranular misorientation. We suggest how climb of these disconnections could drive coordinated facet junction motion. These findings emphasize that both local and longer-range, collective interactions are important to understanding irradiation-induced interfacial evolution.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2026

Optimization of Nb 3 Sn sputtering on SRF structures

Superconducting radiofrequency (SRF) cavities are the key technology to compact, high-efficiency, and cost-effective CW SRF accelerators. Further improvements in the efficiency can be realized by using novel materials such as Nb 3 Sn coated on the inner surface of SRF cavities. The Nb 3 Sn coatings enable cavity operation at 4 K, where the Nb 3 Sn coated cavities are already very efficient and have high intrinsic quality factors. Advances in Nb3Sn coatings on the inner surface of SRF cavities showed the potential for this material to significantly cut the capital and operating costs of SRF accelerators. Several approaches have been and are being investigated for coating SRF cavities with Nb 3 Sn. Magnetron sputtering is a versatile technique in that it has been shown to produce Nb 3 Sn films on flat Nb target in a single phase and a precisely controlled thickness, low defect levels, and a favorable morphology. Deposition of Nb 3 Sn films on SRF cavities have also shown promising RF superconducting properties. However, sputter coating of Nb 3 Sn on SRF cavities requires further development to be used in accelerators.

43 PARTICLE ACCELERATORS↗
NASA NTRS1973

Control and protection system for paralleled modular static inverter-converter systems

A control and protection system was developed for use with a paralleled 2.5-kWe-per-module static inverter-converter system. The control and protection system senses internal and external fault parameters such as voltage, frequency, current, and paralleling current unbalance. A logic system controls contactors to isolate defective power conditioners or loads. The system sequences contactor operation to automatically control parallel operation, startup, and fault isolation. Transient overload protection and fault checking sequences are included. The operation and performance of a control and protection system, with detailed circuit descriptions, are presented.

Birchenough, A. G.↗
NASA NTRS1981

The application of fracture control to a weld specification

An approach used on the external tank (ET) portion of the Space Shuttle Program which employs fracture control to establish defect acceptance criteria in a welding specification is discussed. Weld acceptance criteria developed for the ET fabricated from 2219 aluminum are demonstrated using as an example one of the actual ET welds. A table of weld grades as a function of acceptable defect length is presented. The design drawing specifies the weld grade for a particular weld; then the inspector uses the grade to determine the defect length for radiographic and penetrant acceptance of the weld. By allowing each weld to be judged by its own defect requirement instead of using the tightest requirement, the number of weld repairs has been minimized, resulting in lower cost with no compromise in performance.

Bolstad, D. A.↗
NASA NTRS1988

Monitoring Welding-Gas Quality

System monitors welding gas to ensure characteristics within predetermined values. Responds to changes that might go unnoticed by human operator and acts quickly to prevent weld defects. Electronic pressure controller employs various amounts of gain, equalization, and compensation to respond to changes in gas-supply pressure. Works in conjuction with pressure/oxygen/moisture monitor.

Huddleston, Kevin L.↗
NASA NTRS1997

Effect of perturbations and a meal on superior mesenteric artery flow in patients with orthostatic hypotension

Our aims were to evaluate to role of superior mesenteric blood flow in the pathophysiology of orthostatic hypotension in patients with generalized autonomic failure. METHODS: Twelve patients with symptomatic neurogenic orthostatic hypotension and 12 healthy controls underwent superior mesenteric artery flow measurements using Doppler ultrasonography during head-up tilt and tilt plus meal ingestion. Autonomic failure was assessed using standard tests of the function of the sympathetic adrenergic, cardiovagal and postganglionic sympathetic sudomotor function. RESULTS: Superior mesenteric flow volume and time-averaged velocity were similar in patients and controls at supine rest; however, responses to cold pressor test and upright tilt were attenuated (p < 0.05) in patients compared to controls. Head-up tilt after the meal evoked a profound fall of blood pressure and mesenteric blood flow in the patients; the reduction of mesenteric blood flow correlated (r = 0.89) with the fall of blood pressure in these patients, providing another manifestation of failed baroreflexes. We make the novel finding that the severity of postprandial orthostatic hypotension regressed negatively with the postprandial increase in mesenteric flow in patients with orthostatic hypotension. CONCLUSION: Mesenteric flow is under baroreflex control, which when defective, results in, or worsens orthostatic hypotension. Its large size and baroreflexivity renders it quantitatively important in the maintenance of postural normotension. The effects of orthostatic stress can be significantly attenuated by reducing the splanchnic-mesenteric volume increase in response to food. Evaluation of mesenteric flow in response to eating and head-up tilt provide important information on intra-abdominal sympathetic adrenergic function, and the ability of the patient to cope with orthostatic stress.

Non-NASA Center↗
DOE OSTI2022

Coalescence of GaP on V-Groove Si

With an increase of control over crystalline defects, metallorganic vapor phase epitaxy (MOVPE)-grown III-V-on-Si multijunction solar cells have seen rapid increases in efficiency in recent years, pointing to a promising path to lower cost III-V solar cells. However, the cost of chemo-mechanical polishing the Si wafers to prepare them for epitaxy is high. The use of V-groove nanopatterns enables similar defect reduction to that achieved on planar wafers, but the nanopatterns can be fabricated with a low-cost process. While V-grooves offer advantages over planar Si, they add complexity to the growth process. In particular, coalescence can cause the formation of threading dislocations, and the highly-directional growth conditions required for coalescence are unusual for MOVPE. We have studied the coalescence of GaP films nucleated directly on V-groove Si by MOVPE. We observed that for optimized growth conditions (V/III=5,000 and T=800 C) two growth modes were possible, and the resulting morphology depended on the exact geometry of the SiNx cap used to cover the (0 0 1)-oriented Si at the tops of the grooves. For caps with a width >100 nm, noncoalescing, nano ridge-like growth terminating in f1 1 1g facets was observed. For narrower caps, coalescence with an RMS roughness of 0.2 nm as measured by atomic force microscopy was observed. We will discuss mechanisms responsible for this phenomenon, including the role of Si from the substrate surface. The dislocation dynamics of this system were studied with electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). We find that V-grooves do not block dislocation glide; ECCI measurements show misfit dislocations greater than 10 micrometers long observed to continue perpendicularly across neighboring V-grooves. In addition, all threading dislocations appear to lie on f1 1 1g planes, consistent with the GaP relaxing via glided-in glissile dislocations. The dislocation dynamics and morphological evolution of the coalescence of GaP on Si, possible mechanisms behind the observed phenomenons, and further dislocation mitigation strategies for these materials will be presented.

dislocation dynamics↗
DOE OSTI2024

Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics

The growth of the information era economy is driving the pursuit of advanced materials for microelectronics, spurred by exploration into “Beyond CMOS” and “More than Moore” paradigms. Atomically thin 2D materials, such as transition metal dichalcogenides (TMDCs), show great potential for next-generation microelectronics due to their properties and defect engineering capabilities. This perspective delves into atomic precision processing (APP) techniques like atomic layer deposition (ALD), epitaxy, atomic layer etching (ALE), and atomic precision advanced manufacturing (APAM) for the fabrication and modification of 2D materials, essential for future semiconductor devices. Additive APP methods like ALD and epitaxy provide precise control over composition, crystallinity, and thickness at the atomic scale, facilitating high-performance device integration. Subtractive APP techniques, such as ALE, focus on atomic-scale etching control for 2D material functionality and manufacturing. In APAM, modification techniques aim at atomic-scale defect control, offering tailored device functions and improved performance. Achieving optimal performance and energy efficiency in 2D material-based microelectronics requires a comprehensive approach encompassing fundamental understanding, process modeling, and high-throughput metrology. Finally, the outlook for APP in 2D materials is promising, with ongoing developments poised to impact manufacturing and fundamental materials science. Integration with advanced metrology and codesign frameworks will accelerate the realization of next-generation microelectronics enabled by 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Controlling AM spatter and conduction

An intelligent feed forward model to control additive manufacturing (AM) laser powder bed fusion process and reduce spattering whereby defects are eliminated by controlling the laser power and reducing spattering through a computer model. This application describes using a proportional integral derivative (PID) controller to create a power map that reduces spattering.

Khairallah, Saad A.↗
DOE OSTI2022

Electroluminescence from Single-Walled Carbon Nanotubes with Quantum Defects

Individual single-walled carbon nanotubes with covalent sidewall defects have emerged as a class of photon sources whose photoluminescence spectra can be tailored by the carbon nanotube chirality and the attached functional group/molecule. Here we present electroluminescence spectroscopy data from single-tube devices based on (7, 5) carbon nanotubes, functionalized with dichlorobenzene molecules, and wired to graphene electrodes. We observe electrically generated, defect-induced emissions that are controllable by electrostatic gating and strongly red-shifted compared to emissions from pristine nanotubes. The defect-induced emissions are assigned to excitonic and trionic recombination processes by correlating electroluminescence excitation maps with electrical transport and photoluminescence data. At cryogenic conditions, additional gate-dependent emission lines appear, which are assigned to phonon-assisted hot-exciton electroluminescence from quasi-levels. Similar results were obtained with functionalized (6, 5) nanotubes. We also compare functionalized (7, 5) electroluminescence data with photoluminescence of pristine and functionalized (7, 5) nanotubes redox-doped using gold(III) chloride solution. This work shows that electroluminescence excitation is selective toward neutral defect-state configurations with the lowest transition energy, which in combination with gate-control over neutral versus charged defect-state emission leads to high spectral purity.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Medium-Range Order Resists Deformation in Metallic Liquids and Glasses

In crystals, lattice defects, such as dislocations, control mechanical deformation. Similarly, it is widely believed that even in glasses and liquids some kinds of defects, strongly disordered regions, play a major role in deformation. To identify defects researchers focused on the nature of the short-range order (SRO) in the nearest neighbor cage of atoms. However, recent results by experiment, simulation and theory raise serious questions about this assumption. They suggest that the atomic medium-range order (MRO) provides resistance against flow at the atomic level. Because the MRO is a bulk property, it implies that defects play only a limited role. This new insight is supported by the density wave theory which shows that the MRO is driven by a top-down global force, rather than being a consequence of the SRO in the bottom-up manner, and the MRO provides stiffness to resist deformation. We briefly summarize the density wave theory, show that the MRO is related to ductility of metallic glasses, and discuss the implications on the role of the MRO in the atomic-level mechanism of deformation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Topological solitons in square-root graphene nanoribbons controlled by electric fields

Conjugational defects, also known as solitons, play an important role in the electronic, magnetic, and optical properties of materials. Understanding solitons can uncover intriguing physics and provide insights for designing quantum materials with tailored band structures and electronic properties. Here we propose a framework to create and control solitons via topological phase transitions in a class of graphene nanoribbons (GNRs) called square-root GNRs, using a transverse electric field. To demonstrate the experimental feasibility, we design and synthesize a representative GNR with a bottom-up approach, with first-principles calculations revealing topological soliton states at the domain wall induced by the electric field. In conclusion, the framework introduced in this work can potentially enable direct manipulation of solitons and provide a platform to study them systematically.

36 MATERIALS SCIENCE↗
NASA NTRS2024

Real-Time Temperature Field State Observer and Digital Replica to Support Cyber-Physical Testing

Cyber-physical testing is a class of experimental methods in which a system is partitioned into physical and numerical components to study its overall behavior. Transfer systems are typically needed to capture relevant interactions by enforcing appropriate interface conditions between the physical and numerical portions. While cyber-physical testing is often performed using lumped-parameter systems, thermomechanical cyber-physical testing requires the use of thermal actuators as transfer systems to apply a thermal condition over a spatially distributed region or surface. Thus, the interactions between the numerical and physical components are of a distributed nature, i.e., a field rather than point values. In this paper, we develop and experimentally validate a state observer for temperature fields to enable thermomechanical cyber-physical testing. The state observer provides continuous estimates of temperature over a surface of the thermal actuator using only temperature measurements at discrete locations. The estimated temperature field is then leveraged to account for localized mechanical defects in the interface condition. The method consists of building a digital replica of one portion of the control plant. By imposing defects in the digital replica it is used to generate and output the response of a thermal load pattern that represents that of a physical system with mechanical defects.

Manuel Salmeron↗
DOE OSTI2025

Beam Shaping and Oscillation for Metals Additive Manufacturing

Additive Manufacturing (AM) is pivotal for next-generation industrial manufacturing but is hampered by process control challenges leading to unwanted defects and sub-optimal material properties. Our research builds on prior work that utilized beam oscillation techniques to mitigate these issues (Wu et al., 2023). We focus on investigating the influence of beam oscillation frequency on melt pool dynamics, utilizing in-situ synchrotron material characterization from the ESRF (Chen et al., 2026). Preliminary findings indicated that beam oscillation results in unique fluid flow patterns and enhanced melting stability. These findings suggested the possibility of optimized AM process control, including minimized defects and tailored thermal histories. We proposed further research to explore the effects of beam oscillation frequencies comprehensively, using the in-situ characterization capabilities at the ESRF. The goal was to quantify this relationship, offering a pathway to more precise AM process control and optimization. Our research is expected to offer new scientific insights into the fluid mechanics and thermal behaviour in AM, contributing to its broader applicability and commercial viability.

36 MATERIALS SCIENCE↗