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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Investigation of the distribution of laser-induced damage precursors in etched grating sidewalls fabricated using inductively coupled plasma reactive-ion etching

Inductively coupled plasma reactive-ion etching for grating fabrication is explored with emphasis on the type and distribution of process-induced defects that can act as precursors to laser-induced damage initiation. To provide flexibility in the ability to perform a variety of material characterization methods, grating-like features with large pitch were fabricated in silica monolayers. The results indicate that the etch process introduces surface fluorine and subsurface carbon-containing contamination, which reduces the laser-induced damage threshold. The local relative concentrations of the laser-damage precursors introduced during the etch step of the manufacturing process were investigated using angle-resolved damage testing, taking advantage of the shift of the location of the peak electric-field intensity incident on the grating sidewall. The results suggest an increased level of etch-related defects near the base of the sidewall, with directly fluorinated silicon identified as the primary defect.

Dent, R. [Univ. of Rochester, NY (United States). ↗
NASA NTRS1985

Damage and Repair of Composite Structures

NASA technical memorandum reports on research in damage and repair of composite-material structures of types used in airplane. Research includes: Identifying defect areas, determining whether particular kind of damage weakens structure in manner that degrades performance in intended application, developing repair procedures, and testing to demonstrate given repair procedure enables component to serve during remainder of its design life.

Deaton, J. W.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗
NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗
NASA NTRS1990

Unexpected effects of a trap in CCD echelle spectra of B-type stars

Because of the nature of echelle spectra, cosmetic defects such as traps may mimic real spectral features. An example from spectra taken at CTIO with a GEC CCD is presented, and it is shown how the affected pixels can be eliminated from the reduced spectrum, at a slight cost in signal-to-noise ratio.

Morrison, Nancy D.↗
NASA NTRS1947

An Investigation of the Low-speed Stability and Control Characteristics of Swept-forward and Swept-back Wing in the Ames 40- by 80-foot Wind Tunnel

An investigation has been made at large scale of the characteristics of highly swept wings. Data were obtained at several angles of sideslip on wings having angles of sweep of plus or minus 45 degrees, plus or minus 30 degrees, and 0 degrees. The airfoil sections of the wings varied from approximately NACA 0015 at the root to NACA 23009 at the tip. Each wing was investigated with flaps under flection, partial-span split flaps deflected 60 degrees, full-span split flaps defected 60 degrees and split-flap-type ailerons deflected plus or minus 15 degrees. Values of maximum lift were obtained at Reynolds numbers raging from 5.7 to 9.2 times 10 to the 6th power. In this report the summarized results are compared with the predictions made by use of the simplified theory for the effect of sweep and with existing small-scale data. The basic wind-tunnel results from which these summary data were taken are included in an appendix. The primary problems accompanying the use of weep as revealed by this investigation are the loss in maximum lift, the high effective dihedral, and the sharp reduction in lateral-control effectiveness. In general, simple theory enables good predictions to be made of the gross effects of sweep but further refinements are necessary to obtain the accuracy required for design purposes. In cases where comparisons can be made, the indications are that, as sweep increases, scale effects diminish and large-scale results approach small-scale results.

Mccormack, Gerald M↗
NASA NTRSDate not supplied

Fast Assessment of Metal Performance through Dislocation Physics and Machine Learning

The microstructure of metals is key to their mechanical properties. The types, density, composition and morphology of crystal defects all have pronounced impact on the properties. Changes to the microstructure occurring during processing and use can be very striking. The emerging technology additive manufacturing (AM) has the potential to improve performance by allowing optimized designs, but the process and environments can lead to unusual microscale features whose properties must be understood and characterized to enable higher technological readiness levels and application. Experimentally, an extensive evaluation of mechanical properties of 3D printed metals is a challenge, and anomalous effects related to the AM process add complexity. We present a new machine learning (ML) model predicting mechanical response based on dislocation mediated plasticity simulations. A large set of 3D discrete dislocation dynamics simulations with wide ranges of loading conditions is transformed to preprocessed data ready for training with the ML model. The trained model can predict the mechanical response of Mo30W for a given microstructure evolution, providing key information essential for optimization of AM processing.

Jaehyun Cho↗
NASA NTRSDate not supplied

Fast Assessment of Metal Performance through Dislocation Physics and Machine Learning

The microstructure of metals is key to their mechanical properties. The types, density, composition and morphology of crystal defects all have pronounced impact on the properties. Changes to the microstructure occurring during processing and use can be very striking. The emerging technology additive manufacturing (AM) has the potential to improve performance by allowing optimized designs, but the process and environments can lead to unusual microscale features whose properties must be understood and characterized to enable higher technological readiness levels and application. Experimentally, an extensive evaluation of mechanical properties of 3D printed metals is a challenge, and anomalous effects related to the AM process add complexity. We present a new machine learning (ML) model predicting mechanical response based on dislocation mediated plasticity simulations. A large set of 3D discrete dislocation dynamics simulations with wide ranges of loading conditions is transformed to preprocessed data ready for training with the ML model. The trained model can predict the mechanical response of Mo30W for a given microstructure evolution, providing key information essential for optimization of AM processing.

Jaehyun Cho↗
NASA NTRS1979

Quantitative Analysis of Defects in Silicon

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Natesh, R.↗
NASA NTRS1985

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Lagowski, J.↗
NASA NTRS1972

Improving the efficiency of GaP LED's which emit green light

A study of techniques for preparing n-type material and junctions which yield the most consistent high diode efficiency values high lighted the role that Ga vacancies and/or associated defects play in reducing the green luminescent efficiency of n-type GaP. A useful method for obtaining good quality material was developed. It is shown that junction formation at high temperatures in a process where the n to p transition occurs without removing the substrate from the furnace yields devices superior to those obtained by diffusion or double epitaxy in the conventional manner previously used for GaP junction formation.

Ladany, I.↗
NASA NTRS2023

CST: A Tool for Optimizing the Efficiency and Effectiveness of Static-Code Analysis Tools

Static Code Analysis (SCA) is a vital component of NASA IV&V’s mission assurance for safety-critical software as it reduces the likelihood of software-induced hazards impacting mission success. Static Code Analysis achieves this by identifying hazards that may not have been otherwise detectable by typical code reviews or other testing. Using SCA tools, however, can be intimidating due to steep learning curves, especially considering tool performance and defect coverage varies greatly. Because of this variation amongst SCA tools, understanding which tools support certain defects and which do not, as well as understanding how to run an analysis based on steps that are unique to each tool, can be difficult to both new and experienced analysts alike. To mitigate this, the SCAWG or the IV&V Static Code Analysis Working Group, created the SCA Checker Taxonomy and Starting Point Profiles. The Checker Selection Tool (CST) incorporates these two SCAWG products into an interactive tool which allows the user to: select organized categories of defects they would like the SCA tools to discover, select default checkers depending on their mission type (e.g. flight), and configure multiple SCA tools at once. C/C++, Java, and Python defect checkers from four common SCA tools were utilized in this iteration of the CST. This iteration also includes the addition of training, SCA tool specific help, and taxonomy guide links, into its design to help users new to Static Code Analysis learn how to perform SCA more efficiently. The CST has been subject to beta testing by experienced static code analysts from the SCAWG to ensure a usable and accurate final product. The implications of the CST in the mission assurance of NASA safety-critical software are profound, as the CST can help identify and reduce false positives and false negatives, fundamentally improving overall SCA efficiency and accuracy.

static code analysis↗
DOE OSTI2024

First-principles study of defects and doping limits in CaO

Calcium oxide (CaO) is a promising host for quantum defects because of its ultrawide bandgap and potential for long spin coherence times. Using hybrid functional calculations, we investigate the intrinsic point defects and how they limit Fermi-level positions and doping in CaO. We find calcium and oxygen vacancies to be the most common intrinsic defects, acting as compensating acceptors and donors, respectively. Oxygen interstitials are also prevailing under O-rich conditions and act as compensating donors. Due to compensation by these defects, O-poor conditions are required to dope CaO n-type, while O-rich conditions are required for p-type doping. We find that, at room temperature, intrinsic CaO can only achieve Fermi-level positions between 1.76 eV above the valence-band maximum (VBM) and 1.73 eV below the conduction-band minimum (CBM). If suitable shallow dopants are found, the allowed range of Fermi levels would increase to between VBM + 0.53 eV and CBM − 0.27 eV and is set by the compensating intrinsic defects. Additionally, we study hydrogen impurities, and show that hydrogen will not only limit p-type doping but can also act as shallow donor when substituting oxygen (HO defects).

Physics↗
NASA NTRS1981

A comprehensive analysis of the performance characteristics of the Mount Laguna solar photovoltaic installation

This paper represents the first comprehensive survey of the Mount Laguna Photovoltaic Installation. The novel techniques used for performing the field tests have been effective in locating and characterizing defective modules. A comparative analysis on the two types of modules used in the array indicates that they have significantly different failure rates, different distributions in degradational space and very different failure modes. A life cycle model is presented to explain a multimodal distribution observed for one module type. A statistical model is constructed and it is shown to be in good agreement with the field data.

Shumka, A.↗
DOE OSTI2024

Defect Engineering of Bi 2 SeO 2 Thermoelectrics

Abstract Bi 2 SeO 2 is a promising n ‐type semiconductor to pair with p ‐type BiCuSeO in a thermoelectric (TE) device. The TE figure of merit zT and, therefore, the device efficiency must be optimized by tuning the carrier concentration. However, electron concentrations in self‐doped n ‐type Bi 2 SeO 2 span several orders of magnitude, even in samples with the same nominal compositions. Such unsystematic variations in the electron concentration have a thermodynamic origin related to the variations in native defect concentrations. In this study, first‐principles calculations are used to show that the selenium vacancy, which is the source of n ‐type conductivity in Bi 2 SeO 2 , varies by 1–2 orders of magnitude depending on the thermodynamic conditions. It is predicted that the electron concentration can be enhanced by synthesizing under more Se‐poor conditions and/or at higher solid‐state reaction temperatures ( T SSR ), which promote the formation of selenium vacancies without introducing extrinsic dopants. The computational predictions are validated through solid‐state synthesis of Bi 2 SeO 2 . More than two orders of magnitude increase are observed in the electron concentration simply by adjusting the synthesis conditions. Additionally, a significant effect of grain boundary scattering on the electron mobility in Bi 2 SeO 2 is revealed, which can also be controlled by adjusting T SSR . By simultaneously optimizing the electron concentration and mobility, a zT of ≈0.2 is achieved at 773 K for self‐doped n ‐type Bi 2 SeO 2 . The study highlights the need for careful control of thermodynamic growth conditions and demonstrates TE performance improvement by varying synthesis parameters according to thermodynamic guidelines.

Novitskii, Andrei [MANA, National Institute for Ma↗