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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Cracking in polymer substrates for flexible electronic devices and its mitigation

Mechanical reliability plays a critical role in determining the durability of flexible electronic devices because of the significant mechanical stresses they experience during manufacturing and operation. Many such devices are built on sheets comprising stiff transparent-conducting oxide (TCO) electrode films on compliant polymer substrates, and it is generally assumed that the high-toughness polymer substrates do not crack. Contrary to this assumption, here we show extensive cracking in the polymer substrates during bending of a variety of TCO/polymer sheets, and a device example — flexible perovskite solar cells. Such substrate cracking, which compromises the overall mechanical integrity of the entire device, is driven by the amplified stress-intensity factor caused by the elastic mismatch at the film/substrate interface. To mitigate this substrate cracking, an interlayer-engineering approach is designed and experimentally demonstrated. This approach is potentially applicable to myriad flexible electronic devices, with stiff films on compliant substrates, for improving their durability and reliability.

42 ENGINEERING↗
DOE OSTI2024

Statistical analysis of displacement damage in small devices from neutron and ion irradiation

Modern semiconductor devices, such as gate-all-around nanosheet field-effect transistors (GAA NS FETs), are smaller than displacement damage cascades from fission neutrons. In this regime, device failure may occur through low-probability single events, rather than by parametric degradation previously seen in larger devices. Here, we present a statistical model that predicts the probability of a damage event in a small device and the probability distribution of the magnitude, i.e., number of displacements within the device, from each event. The model is developed first for neutron irradiation and then for energetic ion irradiation. The model is consistent with results from recent experiments in which lithium-ion irradiation produced stepwise increases in subthreshold current in GAA NS FETs.

Wampler, W. R.↗
DOE OSTI2024

Frequency-domain computing using nonlinear acoustic-wave device on lithium niobate

Abstract Multiply-accumulation are crucial computing operations in signal processing, numerical simulations, and machine learning. In recent years, optical analog approaches have demonstrated higher computing performance and better power efficiency than their digital counterparts. However, analog computing chips usually need large areas and complex structures for parallel computing, as a single device element only executes one computing operation at a single time. Here, we demonstrate frequency-domain computing using the nonlinear acoustic-wave devices on lithium niobate, featuring a normalized external second-harmonic generation conversion efficiency of ~ 5.7 × 10-4 W-1. The second-order sum-frequency nonlinear process of lithium niobate enables multiplication of inputs encoded in the frequency domain. Compared to the analog schemes, our device features a notably simpler design, and nanofabrication requires only one lift-off. Using a single acoustic-wave device within an area of 0.03 mm2, we can simultaneously conduct over 130,000 multiply-accumulation operations. Our acoustic-wave device shows applications in real and complex vector convolutions and image processing. This demonstration sets the stage for experimental realizations into frequency-domain integrated nonlinear acoustic computing systems, potentially shaping future developments in acoustic neural networks and quantum computing.

chai, mingzhao (ORCID:0009000466226341)↗
DOE OSTI2024

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

Materials Science↗
DOE OSTI2025

Network analysis of memristive device circuits: dynamics, stability and correlations

Abstract Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the information-processing of neurons. The resistance in a memristive device depends on the history of the applied bias and thus displays a type of memory. The interplay of this memory with the dynamic properties of the network can give rise to new behavior, offering many fascinating theoretical challenges. But methods to analyze general memristive circuits are not well described in the literature. In this paper we develop a general circuit analysis for networks that combine memristive devices alongside resistors, capacitors and inductors and under various types of control. We derive equations of motion for the memory parameters of these circuits and describe the conditions for which a network should display properties characteristic of a resonator system. For the case of a purely memresistive network, we derive Lyapunov functions, which can be used to study the stability of the network dynamics. Surprisingly, analysis of the Lyapunov functions show that these circuits do not always have a stable equilibrium in the case of nonlinear resistance and window functions. The Lyapunov function allows us to study circuit invariances, wherein different circuits give rise to similar equations of motion, which manifest through a gauge freedom and node permutations. Finally, we identify the relation between the graph Laplacian and the operators governing the dynamics of memristor networks operators, and we use these tools to study the correlations between distant memristive devices through the effective resistance.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Qumode transfer between continuous- and discrete-variable devices

Transferring quantum information between different types of quantum hardware is crucial for integrated quantum technology. In particular, converting information between continuous variable (CV) and discrete variable (DV) devices enables many applications in quantum networking, quantum sensing, quantum machine learning, and quantum computing. This paper addresses the transfer of CV-encoded information between CV and DV devices. We present a resource-efficient method for encoding CV states and implementing CV gates on DV devices, as well as two measurement-based protocols for transferring CV states between CV and DV devices. The success probability of the transfer protocols depends on the measurement outcome and can be increased to near-deterministic values by adding ancillary qubits to the DV devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

IRIS-MASH: Efficient Multi-device Asynchronous Multi-Stream Heterogeneous Computing

In the rapidly evolving field of high-performance computing (HPC), effectively leveraging heterogeneous devices through asynchronous task programming is paramount. This paper presents a robust asynchronous task programming model tailored for a multi-device, multi-stream execution environment that incorporates a diverse array of heterogeneous computing units, including GPUs from various vendors and other accelerators. Current state-of-the-art task programming models provide methodologies to support asynchronous task executions, but they typically handle homogeneous devices using native programming languages, while support for heterogeneous devices is limited to frameworks like OpenCL. This gap presents significant challenges in abstracting heterogeneous devices to harness their true asynchronous capabilities effectively using their native programming languages. By implementing asynchronous task execution, our model significantly boosts the performance of tiled algorithm task graphs through overlapping data transfers with computation and enabling the simultaneous execution of multiple kernels. We integrate this approach into a heterogeneous Intelligent Runtime System (IRIS) and assess its performance using a suite of tiled algorithm benchmarks from the heterogeneous math kernels library (MatRIS) based on IRIS. Experimental results demonstrate a performance improvement ranging from 1.6 × to 2 × over IRIS without asynchronous support, and a notable 22% performance enhancement compared to established runtime systems such as StarPU and PaRSEC. This approach significantly improves computation efficiency of HPC workflows and provides a solid base for future exploration and development in the area of asynchronous task programming in heterogeneous systems.

Miniskar, Narasinga Rao [ORNL] (ORCID:000000018259↗
DOE OSTI2024

Stability optimization of energetic particle driven modes in nuclear fusion devices: the FAR3d gyro-fluid code

The development of reduced models provide efficient methods that can be used to perform short term experimental data analysis or narrow down the parametric range of more sophisticated numerical approaches. Reduced models are derived by simplifying the physics description with the goal of retaining only the essential ingredients required to reproduce the phenomena under study. This is the role of the gyro-fluid code FAR3d, dedicated to analyze the linear and nonlinear stability of Alfvén Eigenmodes (AE), Energetic Particle Modes (EPM) and magnetic-hydrodynamic modes as pressure gradient driven mode (PGDM) and current driven modes (CDM) in nuclear fusion devices. Such analysis is valuable for improving the plasma heating efficiency and confinement; this can enhance the overall device performance. The present review is dedicated to a description of the most important contributions of the FAR3d code in the field of energetic particles (EP) and AE/EPM stability. FAR3d is used to model and characterize the AE/EPM activity measured in fusion devices as LHD, JET, DIII-D, EAST, TJ-II and Heliotron J. In addition, the computational efficiency of FAR3d facilitates performing massive parametric studies leading to the identification of optimization trends with respect to the AE/EPM stability. This can aid in identifying operational regimes where AE/EPM activity is avoided or minimized. This technique is applied to the analysis of optimized configurations with respect to the thermal plasma parameters, magnetic field configuration, external actuators and the effect of multiple EP populations. In addition, the AE/EPM saturation phase is analyzed, taking into account both steady-state phases and bursting activity observed in LHD and DIII-D devices. The nonlinear calculations provide: the induced EP transport, the generation of zonal structures as well as the energy transfer towards the thermal plasma and between different toroidal/helical families. Finally, FAR3d is used to forecast the AE/EPM stability in operational scenarios of future devices as ITER, CFETR, JT60SA and CFQS as well as possible approaches to optimization with respect to variations in the most important plasma parameters.

Alfv én Eigenmodes↗
DOE OSTI2026

All-organic self-separating three-dimensionally nanoarchitected electrochemical energy storage devices

This work realizes a three-dimensionally (3D) nanoarchitected, all organic, "self-separating" lithium-ion electrochemical energy storage (EES) device that is cycled as a solid-state full cell. The device is enabled by a monolithic carbon anode with a co-continuous pore network, derived from the structure direction of resols by an ultra-large molar mass block copolymer (BCP), poly(styrene-block-2-dimethylaminoethyl methacrylate) (SA). Electropolymerization of a single-phase conductive and redox-active material, poly((2,3-dihydrothieno[3,4-b][1,4]dioxin-2-yl)methyl 9,10-dioxo-9,10-dihydroanthracene-2-carboxylate) (PAQEDOT), into the pore space provides the cathode of the cell. The device is electronically contacted to the relevant electrode network enabled by the co-continuous nature of each electrode. Electrochemical processing via cycling against external lithium in an electrolyte generates a solid electrolyte interphase (SEI) as a separator and lithiates the cell electrodes, after which the EES device is cycled in the solid state. While the full cell does not demonstrate high cyclability, the best full cell demonstrates a discharge capacity of 267 milliamp hours per gram (mAh/g). This work marks, to the best of knowledge of the authors, the first example of an all-organic materials derived 3D nanoarchitected EES device, as well as the first design of "self-separating" cell fabrication. Furthermore, generalization of the design to another co-continuous carbon form factor is demonstrated.

FOS: Physical sciences↗
NASA NTRS1973

Active cleaning technique device

The objective of this program was to develop a laboratory demonstration model of an active cleaning technique (ACT) device. The principle of this device is based primarily on the technique for removing contaminants from optical surfaces. This active cleaning technique involves exposing contaminated surfaces to a plasma containing atomic oxygen or combinations of other reactive gases. The ACT device laboratory demonstration model incorporates, in addition to plasma cleaning, the means to operate the device as an ion source for sputtering experiments. The overall ACT device includes a plasma generation tube, an ion accelerator, a gas supply system, a RF power supply and a high voltage dc power supply.

Shannon, R. L.↗
NASA NTRS1976

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers.

Besser, P. J.↗
NASA NTRS1976

A real-time optical data processing device

A novel liquid-crystal electro-optical device useful as a real-time input device in coherent optical data processing is described. The device is a special adaptation of an ac photoactivated liquid-crystal light valve, and utilizes a hybrid field effect (45 deg twisted nematic effect in OFF state and pure optical birefringence of the liquid crystal in ON state). A thin-film sandwich exerts photoelectric control over the optical birefringence of a thin liquid-crystal layer. Liquid-crystal layer thickness is successfully reduced without image degradation. The device offers high resolution (better than 100 lines/mm), contrast (better than 100/1), high speed (10 msec ON, 15 msec OFF), high input sensitivity, low power input, low fabrication cost, and can be operated at below 10 V rms. Preliminary measurements on device performance in level slicing, filtering, contrast reversal, and edge enhancement are under way.

Jacobson, A.↗
NASA NTRS1977

Fluid sampling device

An inlet leak is described for sampling gases, more specifically, for selectively sampling multiple fluids. This fluid sampling device includes a support frame. A plurality of fluid inlet devices extend through the support frame and each of the fluid inlet devices include a longitudinal aperture. An opening device that is responsive to a control signal selectively opens the aperture to allow fluid passage. A closing device that is responsive to another control signal selectively closes the aperture for terminating further fluid flow.

Studenick, D. K.↗
NASA NTRS1977

Memory device for two-dimensional radiant energy array computers

A memory device for two dimensional radiant energy array computers was developed, in which the memory device stores digital information in an input array of radiant energy digital signals that are characterized by ordered rows and columns. The memory device contains a radiant energy logic storing device having a pair of input surface locations for receiving a pair of separate radiant energy digital signal arrays and an output surface location adapted to transmit a radiant energy digital signal array. A regenerative feedback device that couples one of the input surface locations to the output surface location in a manner for causing regenerative feedback is also included

Schaefer, D. H.↗
NASA NTRS1977

Effectiveness of an inlet flow turbulence control device to simulate flight noise fan in an anechoic chamber

A hemispherical inlet flow control device was tested on a 50.8 cm. (20-inch) diameter fan stage in the NASA-Lewis anechoic chamber. The control device used honeycomb and wire mesh to reduce turbulence intensities entering the fan. Far field acoustic power level results show about a 5 db reduction in blade passing tone and about 10 dB reduction in multiple pure tone sound power at 90% design fan speed with the inlet device in place. Hot film cross probes were inserted in the inlet to obtain data for two components of the turbulence at 65 and 90% design fan speed. Without the flow control device, the axial intensities were below 1.0%, while the circumferential intensities were almost twice this value. The inflow control device significantly reduced the circumferential turbulence intensities and also reduced the axial length scale.

Woodward, R. P.↗
NASA NTRS1977

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

Final results from the CMOS Radiation Effects Measurement (CREM) experiment flown on Explorer 55 are presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to long-range annealing, effects of operating temperature on semiconductor performance in space, biased and unbiased P-MOS device degradation, unbiased n-channel device performance, changes in device transconductance, and the difference in ionization efficiency between Co-60 gamma rays and 1-Mev Van de Graaff electrons. The performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Environment models and computational methods and their impact on device-degradation estimates are being reviewed to determine whether they permit cost-effective design of spacecraft.

Stassinopoulos, E. G.↗
NASA NTRS1977

Effectiveness of an inlet flow turbulence control device to simulate flight fan noise in an anechoic chamber

A hemispherical inlet flow control device was tested on a 50.8 cm. (20-inch) diameter fan stage in the NASA-Lewis Anechoic Chamber. The control device used honeycomb and wire mesh to reduce turbulence intensities entering the fan. Far field acoustic power level results showed about a 5 dB reduction in blade passing tone and about 10 dB reduction in multiple pure tone sound power at 90% design fan speed with the inlet device in place. Hot film cross probes were inserted in the inlet to obtain data for two components of the turbulence at 65 and 90% design fan speed. Without the flow control device the axial intensities were below 1.0%, while the circumferential intensities were almost twice this value. The inflow control device significantly reduced the circumferential turbulence intensities and also reduced the axial length scale.

Woodward, R. P.↗