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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Smart manufacturing approach to manufacture bulk nanocrystalline aluminum for lightweight applications

In this research, a smart manufacturing approach was used to enhance the mechanical properties of aluminum (Al) for lightweight applications. The smart manufacturing involved cryomilling of Al powders with and without 5 wt.% magnesium (Mg) powders for varying durations followed by a high-pressure cold spray (HPCS) additive manufacturing process to prepare bulk components. The morphological changes, crystallite size, and composition of the cryomilled powders and cold sprayed (CS’ed) components were examined using scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM) techniques. The results showed that the crystallite size reduces with an increase in cryomilling time and the addition of Mg dopant. To test the mechanical properties of the bulk CS’ed components, microhardness tests were performed using a Vickers microhardness tester. Uniaxial tensile tests were also carried out to ascertain the material’s tensile properties. The mechanical testing results showed great improvement in the hardness and tensile strength of CS’ed Al–Mg samples as compared to pure Al samples. Subsequently, fractography analysis of the tensile failed samples was carried out to determine the nature of the failure. Here, the research article also discusses the inherent mechanisms for the improvement in mechanical properties of smart manufactured components as a result of Mg doping and cryomilling.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Serrated flow in $\mathrm{NaI:Tl}$ scintillator crystals

We report the serrated-flow behavior is an important phenomenon that unveils material-deformation mechanisms, as reported for various kinds of materials. NaI doped with Tl (NaI:Tl) is unique among scintillation materials in that the structure contains glide planes that are linked to serration behavior. In the present work, single crystals of NaI:Tl were subjected to room-temperature compression experiments at different strain rates. The serrated flow was observed, and complexity and multifractal analyses were performed to analyze the serration behavior. The findings revealed that the strain rate had a pronounced effect on the complexity and multifractality of the serrated flow, similar to what has been found in other alloy systems. The results also indicate that there may be a strong link between the complexity of the serrated flow behavior and the heterogeneity of the underlying dynamics. It is expected that the present work could be a step toward a better understanding of the deformation behavior and forgeability of NaI:Tl single crystals.

36 MATERIALS SCIENCE↗
NASA NTRS1985

High-efficiency device research

Progress on research in high-efficiency silicon solar cells is presented. Topics addressed include: recombination measurement techniques, doped crystals, minority carrier transport, oxygen process in solar cells, solar cell models, loss mechanics in solar cells, high-efficiency metal insulators, dendritic web cells, and surface and bulk loss reduction by low-energy hydrogen doping.

Burger, D. R.↗
NASA NTRS1991

The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

Lowry, Lynn E.↗
NASA NTRS1988

Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEE

Mn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.

Iyer, Shanthi N.↗
NASA NTRS2013

Silicon/Carbon Nanotube Photocathode for Splitting Water

A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

Amashukeli, Xenia↗
DOE OSTI2023

Li-ion and Na-ion intercalation in layered MnO 2 cathodes enabled by using bismuth as a cation pillar

Low-cost batteries based on Earth-abundant materials are needed for large-scale electrical storage for the grid. Cathodes based almost entirely on Mn oxides would reduce overall battery cost but cycling of Mn oxides is often not stable. In Li-ion cells, most polymorphs of MnO 2 undergo irreversible transformation to spinel LiMn 2 O 4 during cycling, causing capacity loss. Doping MnO 2 with Bi is known to stabilize the structure, but previous reports have relied on low-crystallinity material making it impossible to pinpoint the Bi location in the structure or its mechanism. In this work, we report a series of hydrated Bi-doped layered MnO 2 compounds and characterize their structures as a function of Bi amount. Bi is shown to reside in the material interlayer, provoking higher long-range structural order even at a low doping level of 1.3%. Doped material improves the specific capacity and stability of cycling in both Li-ion and Na-ion cells. A high level of Bi doping, 4.3%, causes loss of the interlayer crystal water in non-aqueous electrolyte, and this reduces the interlayer distance. Crystal water is shown to be beneficial in a Na-ion system, while its loss improves Li-ion cycling. This provides fundamental insight into how pillaring by a heavy, multivalent cation stabilizes layered oxides.

25 ENERGY STORAGE↗
DOE OSTI2022

Spin-triplet superconductivity from excitonic effect in doped insulators

Despite being of fundamental importance and potential interest for topological quantum computing, spin-triplet superconductors remain rare in solid state materials after decades of research. In this work, we present a three-particle mechanism for spin-triplet superconductivity in multiband systems, where an effective attraction between doped electrons is produced from the Coulomb repulsion via a virtual interband transition involving a third electron [V. Crépel, L. Fu, Sci. Adv. 7, eabh2233 (2021)]. Our theory is analytically controlled by an interband hybridization parameter and explicitly demonstrated in doped band insulators with the example of an extended Hubbard model. Our theory of exciton-mediated pairing reveals how, as a matter of principle, a two-particle bound state can arise from the strong electron repulsion upon doping, opening a viable path to Bose–Einstein condensate (BEC)–Bardeen–Cooper–Schrieffer (BCS) physics in solid state systems. In light of this theory, we propose that recently discovered dilute superconductors such as ZrNCl, WTe 2 , and moiré materials can be spin-triplet and compare the expected consequences of our theory with experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Charge Carrier and Spin Diffusion in a Polycrystalline and Single Crystal Lead Halide Perovskite Semiconductor

The directed movement of spin-bearing excitations in semiconductors can enable many potential schemes for spintronic applications. Understanding the mechanism of spin motion, as opposed to charge carrier or exciton motion, may require specialized techniques and sample conditions. Here we employ the noncontact and time-resolved technique of light-induced transient grating spectroscopy (LITG) to measure both carrier and spin motion in a perovskite semiconductor with varying crystallinity. The carrier motion aligns with expectations from past studies undertaken at low fluence, revealing an ambipolar diffusion coefficient on the order of 1 cm 2 /sec and diffusion length of roughly 1.5 μm for single crystals that is strongly attenuated as crystallite size decreases. The spin diffusion is measured with cross-polarized excitation beams and uncovers an intensity-dependent coefficient rising above 100 cm 2 /sec. The fast room-temperature spin relaxation limits the spin diffusion length, but the remarkable speedup of spin over carrier diffusion suggests a mechanism involving a combination of exchange-mediated and doping effects that enhance spin transport.

14 SOLAR ENERGY↗
DOE OSTI2022

Doping-driven resistive collapse of the Mott insulator in a minimal model for VO 2

Here we study the resistive collapse of the Mott insulator state in the dimer Hubbard model. This minimal model has been used to describe the physics of VO 2 , and should be relevant to other strongly correlated materials. It incorporates the physics of correlated dimers and the explicit competition between on-site Coulomb repulsion and magnetic exchange interactions. Our results unveil that between the Mott insulator at half filling and the Fermi liquid metal at high doping there is an intermediate bad metallic phase with exotic features such as a pseudogap, orbital selectivity, and a first-order metal-metal transition. The model is solved within dynamical mean field theory by means of quantum Monte Carlo, which provides the numerically exact solution of the model in the limit of large lattice dimensionality. This model can be considered as a minimal one that captures exotic phenomena associated to the physics of a doped Mott insulator, shading light on their basic physical mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Low-threshold supercontinuum generation in polycrystalline media

Until recently, the generation of super-octave continua in bulk materials at full repetition rates of femtosecond (fs) oscillators has been limited to a few special cases of Kerr lens mode-locked Ti:sapphire lasers. In 2019, we described a 3.4-octave fs source with 50 nJ pulse energy at the repetition rate of 78 MHz based on polycrystalline Cr:ZnS [Vasilyev et al. , Optica 6 , 126 ( 2019 ) OPTIC8 2334-2536 10.1364/OPTICA.6.000126 ]. Here we explain the mechanism of fs supercontinuum generation in transition-metal doped polycrystalline II-VI semiconductors at relatively low (nJ-level) pulse energy. We demonstrate that this new supercontinuum regime is enabled by a complex, yet well-reproducible, interplay between the effects arising from the third-order nonlinearity, the quadratic nonlinearities, and thermal optical effects in the medium. We also demonstrate the control of fs pulse propagation in disordered χ <#comment/> ( 2 ) media via the control of the material microstructure.

Vasilyev, Sergey (ORCID:0000000225203547)↗
DOE OSTI2024

Decoupling of Nitrogen and Oxygen Impurities in Nitrogen Doped SRF Cavities

The performance of superconducting radiofrequency (SRF) cavities is critical to enabling the next generation of efficient high-energy particle accelerators. Recent developments have focused on altering the surface impurity profile through \textit{in-situ} baking, furnace baking, and doping to introduce and diffuse beneficial impurities such as nitrogen, oxygen, and carbon. However, the precise role and properties of each impurity are not well understood. In this work, we attempt to disentangle the role of nitrogen and oxygen impurities through time-of-flight secondary ion mass spectrometry of niobium samples baked at temperatures varying from 75-800 $^\circ$C with and without nitrogen injection. From these results, we developed treatments recipe that decouple the effects of oxygen and nitrogen in doping treatments. Understanding how these impurities and their underlying mechanisms drive further optimization in the tailoring of impurity profiles for high-performance SRF cavities.

43 PARTICLE ACCELERATORS↗
NASA NTRS1999

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. Growth temperatures were in the range of 1140-1150 C and the furnace translation rates were 1.9-2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Different features of the as-grown surface of the vertically and horizontally grown crystals suggest that different growth mechanisms were involved in the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8-8.3 x 10 (exp 19) cm (exp -3) from optical absorption measurements. The crystalline quality of the grown crystals were examined by high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.

Su, Ching-Hua↗
DOE OSTI2022

Impact of Irradiation-induced Lattice Defects and Dopants on Thermal Transport in Oxide Nuclear Fuels

Advanced nuclear reactor concepts aim to use fuels that must withstand unprecedented temperature and radiation extremes. In these fuels, thermal energy transport under irradiation is directly related to fuel longevity, reactor safety, and is arguably one of the most important performance metrics. Here we provide a comprehensive, first-principles-informed treatment of phonon mediated thermal transport in a defect-bearing actinide oxide with direct comparison to experimental measurements. Pristine and proton irradiated thorium dioxide was chosen as a model system to treat the complexity of thermal transport in the presence of lattice defects. A thermal transport model is implemented using the linearized Boltzmann transport equation (LBTE) with input from first principles calculations and defect evolution models. The output of the LBTE is compared directly to mesoscopic measurements of thermal conductivity on length scales commensurate with defect accumulation. Parametric measurements of conductivity with irradiation dose and temperature reveal a monotonic decrease in conductivity with irradiation dose, in the range of 0.001 dpa to 0.1 dpa. Besides radiation-induced defects, doping the thorium dioxide crystal with small quantities of uranium atoms also results in a drastic reduction in thermal conductivity. Temperature-dependent measurements of thermal conductivity in uranium-doped thorium dioxide single crystals suggests a resonant scattering mechanism is responsible for the observed reduction. This comprehensive, atomistic- to meso-scale treatment provides the necessary basis to investigate thermal transport under irradiation in more complex systems that exhibit strong electron correlation. This is a poster presentation.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Electrochemically decorated gold nanoparticles on CVD graphene ChemFET sensor for the highly sensitive detection of As(III)

Here, in this paper, we report a novel reusable receptor-free chemically sensitive field-effect transistor (ChemFET) sensor for the sensitive detection of As(III) using electrochemical doping of Au nanoparticles (AuNPs)-chemical vapour deposition (CVD) graphene (Gr) sensing film (AuNPs-Gr). The sensor consists of a single-gap gold electrode and a single layer of CVD graphene as a conducting/sensing channel decorated with a thin layer of electrochemically deposited AuNPs to catalyze the electroreduction of As(III) ions onto the sensing channel. A new detection strategy was proposed by measuring the resistance change rate of the AuNPs-Gr sensing channel modified between the source electrode and drain electrode, wherein the resistance change was caused by the electrochemical doping of As(0). The results indicated that the electrochemical doping of As(0) onto the sensing channel led to an increase in resistance through the doping interaction among As(0), AuNPs and graphene, enabling the proposed sensor to have an extraordinary detection performance with a high sensitivity. Moreover, the proposed sensor can be recycled by removing the As(0) deposited on the sensing film with the aid of a simple electrochemical oxidization process. Additionally, the mechanism of the sensing strategy based on the electrochemical n-doping of As(0) into the AuNPs-Gr sensing film was investigated using a top liquid gate electrode. The As(III) concentration detected by the AuNPs-Gr ChemFET sensor was as low as 0.001 μg/L, demonstrating that such sensors with a compatible sensing strategy can be used to detect As(III) with high sensitivity, easy fabrication, fast response and can be recycled.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1998

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

Cr-doped ZnSe single crystals were grown by self-seeded physical vapor transport technique under both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. The growth temperatures were in the range of 1140 to 1150C and the furnace translation rates were 1.9 to 2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The different features on the as-grown surface of the vertically and horizontally grown crystals suggests that different growth mechanisms were involved for the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8 to 8.3 x 10(exp 19)/cubic centimeter from optical absorption measurements. The crystalline quality of the grown crystals were examined by high resolution triple crystal X-ray diffraction (HRTXD) analysis.

Su, Ching-Hua↗
DOE OSTI2021

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

42 ENGINEERING↗
DOE OSTI2024

Optimized In Situ Doping Strategy Stabling Single-Crystal Ultrahigh-Nickel Layered Cathode Materials

Single-crystal Ni-rich cathodes offer promising prospects in mitigating intergranular microcracks and side reaction issues commonly encountered in conventional polycrystalline cathodes. However, the utilization of micrometer-sized single-crystal particles has raised concerns about sluggish Li + diffusion kinetics and unfavorable structural degradation, particularly in high Ni content cathodes. Herein, we present an innovative in situ doping strategy to regulate the dominant growth of characteristic planes in the singlecrystal precursor, leading to enhanced mechanical properties and effectively tackling the challenges posed by ultrahigh-nickel layered cathodes. Compared with the traditional dry-doping method, our in situ doping approach possesses a more homogeneous and consistent modifying effect from the inside out, ensuring the uniform distribution of doping ions with large radius (Nb, Zr, W, etc). Further, this mitigates the generally unsatisfactory substitution effect, thereby minimizing undesirable coating layers induced by different solubilities during the calcination process. Additionally, the uniformly dispersed ions from this in situ doping are beneficial for alleviating the two-phase coexistence of H2/H3 and optimizing the Li + concentration gradient during cycling, thus inhibiting the formation of intragranular cracks and interfacial deterioration. Consequently, the in situ doped cathodes demonstrate exceptional cycle retention and rate performance under various harsh testing conditions. Our optimized in situ doping strategy not only expands the application prospects of elemental doping but also offers a promising research direction for developing high-energy-density single-crystal cathodes with extended lifetime.

25 ENERGY STORAGE↗