Thickness-dependent transport in epitaxial CaIrO 3 perovskite thin films
The coexistence of strong electron–electron correlation and strong spin–orbit coupling makes CaIrO 3 a promising candidate for the exploration of emergent phenomena in thin film form. Here, we have realized epitaxial CaIrO 3 films on (La 0.18 Sr 0.82 )(Al 0.59 Ta 0.41 )O 3 single crystal substrates with excellent crystallinity and thicknesses ranging from 3 to 32 nm. Electronic properties range from semiconducting to insulating behavior as a function of decreasing thickness and correlate with increased tetragonal distortion due to substrate-imposed strain. Hall effect measurements indicate that conduction is dominated by electron-type carriers at room temperature but crosses over to transport dominated by hole-like carriers at lower temperatures. Longitudinal magnetoresistance measurements reveal both a quadratic Lorentz dependence and an additional positive component in the field dependence that cannot be explained purely by semi-classical orbital magnetoresistance effects.