Analysis of rectangular RC distributed circuits with shaped electrodes
Rectangular distributed RC network consisting of resistive layer separated by insulator from three shaped electrodes
RC NETWORK↗
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Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing
Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.
Bhattacharya, Pallab↗
Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors
Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.
Ponchak, George E.↗
Computer simulation of Alfven waves and double layers along auroral magnetic field lines
A plasma simulation has been developed to model interactions between inertial Alfven waves and double layers and to investigate their relative contributions at auroral particle acceleration. We use a novel one-dimensional particle-in-cell code, with periodic boundary conditions, to model the nonlinear excitation of current-driven weak double layers via free energy supplied by an inertial Alfven wave. Analysis of the simulation output shows that double layers are not the agent primarily responsible for electron acceleration. Rather, the inertial Alfven wave accelerates groups of electrons into a steepening beam as it encounters them. As the beam electrons reenter the main distribution, decelerated by anomalous resistive effects, they are replaced by electrons farther downstream. Hence, the particles do not free-stream over the length of the channel. Furthermore, this wave action persists even when the system is linearly stable to ion-acoustic modes, precluding the possibility that this behavior is brought about by the formation of ion-acoustic double layers.
Silberstein, M.↗
High-Temperature Intercalated Graphite Fiber Conductors Fabricated
Composites of intercalated graphite fibers show promise to significantly reduce the weight of electromagnetic interference shielding in spacecraft and aircraft. Bromine intercalated pitch-based fibers have been among the most heavily studied systems because of their attractive electrical and thermal conductivities and their stability over a wide range of environmental conditions. Previous studies found that the resistivity of bromineintercalated graphite fibers began to increase when the fibers were exposed to temperatures in excess of about 200 C in air for long periods of time. If the temperature was as high as 450 C, the resistivity increased dramatically within a few hours. It remained unclear, however, whether the increase was due to deintercalation of the bromine or to air oxidation of the fibers. Studies were initially directed toward determining the temperature at which bromine would deintercalate from the fibers, and perhaps become a hazard to both personnel and equipment. So the mass of bromine-intercalated graphite fibers was carefully monitored as it was heated in an inert atmosphere, since the fibers are known to oxidize at a lower temperature than they deintercalate. What was found was that the fibers, which are about 18-wt% bromine, did not lose any appreciable mass even at temperatures approaching 1000 C. X-ray diffraction studies showed that there were also no changes in the overall structure of the compound. Resistivity measurements indicated that there is some slight degradation in the electronic structure, in that the resistivity increased by a few percent. Overall, the results show that these materials may be suitable for applications at temperatures at least this high, provided oxygen is excluded. This may enable their use in carbon-ceramic, and perhaps even carbon-carbon composites.
Gaier, James R.↗
Lithium doped radiation resistant silicon solar cells.
Li doped Si solar cell radiation resistance to high energy electrons, noting fabrication methods and annealing behavior differences
SILICON↗
Highly stretchable organic electrochemical transistors with strain-resistant performance
Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. In this work, the prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness. Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications.
36 MATERIALS SCIENCE↗
A Study of the Electrotransport in Thin Films: An Advanced Method for the Study of Electrotransport in Thin Films Using Electrical Resistance Measurements
To date, very little is understood about electrotransport in thin films. One reason for this is the lack of methods in which electromigration can be adequately monitored dynamically. In this thesis, a new nondestructive method for the study of the electrotransport phenomenon in thin aluminum films is presented. This method makes use of electrical resistance measurements of various regions along the test sample to monitor changes in resistance resulting from electromigration. The advantage of this method is that resistance changes can be observed long before void formation can be seen using standard microscopy methods. In order to achieve the best efficiency using this method, special consideration must be given to the design of the sample. Design problems and their respective solutions are given. The results of the electrical resistance measurements are interpreted by means of photographs taken with an scanning electron microscope. The increase in resistance of the aluminum samples is interpreted to be due to void formation. The expected decrease in resistance near the anode was never observed. It is shown that mass accumulation takes on the form of hillocks and whiskers on the surface of the aluminum film, which does not contribute appreciably to conductivity.
Hummel, R. E.↗
Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.
36 MATERIALS SCIENCE↗
Anomalous Drag in Electron-Hole Condensates with Granulated Order
We explain the strong interlayer drag resistance observed at low temperatures in bilayer electron-hole systems in terms of an interplay between local electron-hole-pair condensation and disorder-induced carrier density variations. Smooth disorder drives the condensate into a granulated phase in which interlayer coherence is established only in well-separated and disconnected regions, or grains, within which the densities of electrons and holes accidentally match. The drag resistance is then dominated by Andreev-like scattering of charge carriers between layers at the grains that transfers momentum between layers. We show that this scenario can account for the observed dependence of the drag resistivity on temperature and, on average, charge imbalance between layers.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evidence of a coupled electron-phonon liquid in NbGe 2
Whereas electron-phonon scattering relaxes the electron’s momentum in metals, a perpetual exchange of momentum between phonons and electrons may conserve total momentum and lead to a coupled electron-phonon liquid. Such a phase of matter could be a platform for observing electron hydrodynamics. Here we present evidence of an electron-phonon liquid in the transition metal ditetrelide, NbGe 2 , from three different experiments. First, quantum oscillations reveal an enhanced quasiparticle mass, which is unexpected in NbGe 2 with weak electron-electron correlations, hence pointing at electron-phonon interactions. Second, resistivity measurements exhibit a discrepancy between the experimental data and standard Fermi liquid calculations. Third, Raman scattering shows anomalous temperature dependences of the phonon linewidths that fit an empirical model based on phonon-electron coupling. We discuss structural factors, such as chiral symmetry, short metallic bonds, and a low-symmetry coordination environment as potential design principles for materials with coupled electron-phonon liquid.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
High-frequency instability of the sheath-plasma resonance
Coherent high-frequency oscillations near the electron plasma frequency are generated by electrodes with positive dc bias immersed in a uniform Maxwellian afterglow plasma. The instability occurs at the sheath-plasma resonance and is driven by a negative RF sheath resistance associated with the electron inertia in the diodelike electron-rich sheath. With increasing dc bias, i.e., electron transit time, the instability exhibits a hard threshold, downward frequency pulling, line broadening, and copious harmonics. The fundamental instability is a bounded oscillation caused by wave evanescence, but the harmonics are radiated as electromagnetic waves from the electrodes acting like antennas. Wavelength and polarization measurements confirm the emission process. Electromagnetic waves are excited by electrodes of various geometries (planes, cylinders, spheres), which excludes other radiation mechanisms such as orbitrons or beam-plasma instabilities. The line-broadening mechanism has been identified as a frequency modulation via the electron transit time by dynamic ions. Ion oscillations at the sheath edge give rise to burstlike RF emissions. These laboratory observations of a new instability are important for antennas in space plasmas, generation of coherent beams with diodes, and plasma diagnostics.
Stenzel, R. L.↗
Influence of Nb alloying on Nb recrystallization and the upper critical field of Nb 3 Sn
Nb 3 Sn conductors are important candidates for high-field magnets for particle accelerators, and they continue to be widely used for many laboratory and NMR magnets. However, the critical current density, J c , of present Nb 3 Sn conductors declines swiftly above 12-15 T. State-of-the-art Ta- and Ti-doped strands exhibit upper critical field, H c2 , values of ~ 24-26.5 T (4.2 K) and do not reach the FCC target J c , which serves as the present stretch target for Nb 3 Sn development. As recently demonstrated, to meet this goal requires enhanced vortex pinning but an independent and supplementary approach is to significantly enhance H c2 . In this study, we have arc-melted multiple Nb alloys with added Hf, Zr, Ta and Ti and drawn them successfully into monofilament wires to investigate the possibilities of H c2 enhancement through alloying. H c2 (T) was measured for all samples in fields up to 16 T and some up to 31 T. We have found that all alloys show good agreement with the standard Werthamer, Helfand, and Hohenberg (WHH) fitting procedure without the need to adjust the paramagnetic limitation parameter (α) and spin-orbit scattering parameter (λ so ). The evaluation of dH c2 /dT near T c , which is proportional to the electronic specific heat coefficient γ and the normal state resistivity ρn, allows a better understanding of the induced disorder introduced by alloying in the A15 phase. So far, we have observed that Hf alloying of pure Nb can enhance H c2 (0) by 3-4 T to ~28 T, while adding just 1 at. %Hf or Zr into a Nb4Ta base alloy can raise H c2 (0) to ~31 T. Very importantly we find that Hf and Zr raise the alloy recrystallization temperature above the usual A15 reaction temperature range of 650°C – 750°C, thus ensuring denser A15 phase nucleation in the Nb alloy grain boundaries, possibly leading to a more homogeneous A15 phase Sn content and refined A15 grain size. Furthermore, the potential for further advancements in Nb 3 Sn properties is explored in relation to the recrystallization of the Nb alloy and the factors controlling the upper critical field.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Method and device for a high temperature vacuum-safe solder resist utilizing laser ablation of solderable surfaces for an electronic module assembly
A process for manufacturing an electronic component having attaches includes providing a first component having a first attach, forming trenches on a portion of the first attach with a laser to form a solder stop, and providing a second component comprising a second attach. The process further includes providing solder between the first attach and the second attach to form a connection between the first component and the second component, where the trenches contain the solder to a usable area. A device produced by the process is disclosed as well.
Stabach, Jennifer↗
Observation of an Unexpected n -Type Semiconducting Behavior in the New Ternary Zintl Phase Eu 3 InAs 3
The ternary arsenides Eu 3 InAs 3 and Sr 3 InAs 3 have been obtained by reactions of the elements in In flux at 1373 K. Structure elucidation by single-crystal X-ray diffraction reveals that Eu 3 InAs 3 and Sr 3 InAs 3 adopt the same orthorhombic structure (space group Pnma, Z = 4, Ca 3 AlAs 3 structure type) with unit cell parameters a = 12.9179(9) Å, b = 4.3990(3) Å, c = 13.9337(10) Å and a = 13.0218(11) Å, b = 4.4364(4) Å, c = 14.1339(12) Å, respectively. The structure consists of linear chains of corner-sharing InAs4 tetrahedra, [InAs 2 As 2/2 ] 6– , and Eu 2+ /Sr 2+ cations. Therefore, both Eu 3 InAs 3 and Sr 3 InAs 3 are valence-precise Zintl phases. As expected from the closed-shell electronic configurations, semiconducting behavior is confirmed by resistivity measurements on single crystals for both and by electronic band structure calculations for Sr 3 InAs 3 . The temperature dependence of resistivity and the computational work are in agreement that Eu 3 InAs 3 and Sr 3 InAs 3 are intrinsic semiconductors with narrow band gaps. Thermopower measurement on single-crystalline samples of Eu 3 InAs 3 shows that in the whole measured temperature range, from 300 to 700 K, the values for the Seebeck coefficient are negative. The observation of a negative Seebeck coefficient with very large absolute value (>400–500 μV K –1 at 700 K) is unexpected among the Zintl phases and suggestive that electrons are the majority charge carriers. Such a rare, n-type charge transport in an undoped compound such as Eu 3 InAs 3 , a material that has not been purposely optimized, could indicate native “defect” chemistry, and not extrinsic doping, as a reason for the unusual behavior. Here, a possible explanation involves a mixed-valent Eu 2+ /Eu 3+ state, which might be inferred from the measured effective paramagnetic moment of 7.2 μB per Eu atom, which is lower than the theoretically predicted value for free-ion moment of 7.9 μ B /Eu.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Freestanding VO 2 membranes on epidermal nanomesh for ultra-sensitive correlated breathable sensors
The interest in highly sensitive sensors is rapidly increasing for detecting very tiny signals for Internet of Things devices. Here, we achieve ultra-sensitive correlated breathable sensors based on freestanding VO 2 membranes. We fabricate the membranes by growing VO 2 films onto sacrificial Sr 3 Al 2 O 6 layer grown on SrTiO 3 , selectively dissolving the Sr 3 Al 2 O 6 in water, and then rendering freestanding VO 2 membrane on nanomesh. The nanomeshes are extremely flexible, sweat permeable, and readily skin-adhesive. The resistance of the VO 2 membranes is reversibly tuned by human’s tiny mechanical stimuli and breath stimuli. The stimuli modulate the Peierls dimerization of one-dimensional V-V chains in the VO 2 lattice which concomitantly controls the electron correlation and hence resistivity. Since our breathable sensors operate based on quantum-mechanical correlation effects, their sensitivity is 1-2 orders of magnitude higher than conventional tactile and respiratory sensors based on other materials. Thus, the freestanding membranes of correlated oxides on epidermal nanomeshes are multifunctional platforms for developing ultra-sensitive correlated breathable sensors.
36 MATERIALS SCIENCE↗
High-frequency instability of the sheath-plasma resonance
Coherent high frequency oscillations near the electron plasma frequency (omega approx. less than omega sub p) are generated by electrodes with positive dc bias immersed in a uniform Maxwellian afterglow plasma. The instability occurs at the sheath-plasma resonance and is driven by a negative RF sheath resistance associated with the electron inertia in the diode-like electron-rich sheath. With increasing dc bias, i.e., electron transit time, the instability exhibits a hard threshold, downward frequency pulling, line broadening and copious harmonics. The fundamental instability is a bounded oscillation due to wave evanescence, but the harmonics are radiated as electromagnetic waves from the electrodes acting like antennas. Wavelength and polarization measurements confirm the emission process. Electromagnetic waves are excited by electrodes of various geometries (planes, cylinders, spheres) which excludes other radiation mechanisms such as orbitrons or beam-plasma instabilities. The line broadening mechanism was identified as a frequency modulation via the electron transit time by dynamic ions. Ion oscillations at the sheath edge give rise to burst-like RF emissions. These laboratory observations of a new instability are important for antennas in space plasmas, generation of coherent beams with diodes, and plasma diagnostics.
Stenzel, R. L.↗